CHE323/CHE384

Chemical Processes for Micro- and Nanofabrication Lithography Sequence

www.lithoguru.com/scientist/CHE323

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Lecture 39 Illumination

Lithography: Stepper
or
Process Overview Scanner

Mask
Chris A. Mack
Adjunct Associate Professor Objective
Lens

Reading:
Chapter 7, Fabrication Engineering at the Micro- and Nanoscale, 4th edition, Campbell

Wafer Coat Prebake Expose PEB Develop Metrology

© 2013 by Chris A. Mack www.lithoguru.com Track and Stepper/Scanner combined into a “photocell”
© Chris Mack 1

Lithography Process The Photoresist

Requirements

• Faithful reproduction of the mask pattern (obtain • Photoresist (our photographic film) must be able
the desired critical dimension, CD) to both “photo” and “resist”
• Allow for pattern transfer (good etch resistance, – Photo: form a high resolution image, getting the
implant stopping power) dimensions of all the features right, and with no
defects
• Good adhesion of photoresist to substrate – Resist: resist etching in order to transfer the pattern
• Proper alignment to previous levels into an underlying layer on the wafer
• Ability to strip away photoresist • Very sophisticated and specialized chemical
• Cost effective, safe, and environmentally formulations are required (read expensive!)
responsible
© Chris Mack 2 © Chris Mack 3

Substrate Preparation Adhesion Promotion

• Water adheres to the dangling silicon bonds at the top

• The purpose of substrate preparation is to surface of the wafer
improve the adhesion of the photoresist material
H HH HH HH HH HH HH H
to the substrate
O O O O O O O
• Sources of Contamination:
Si Si Si Si Si Si Si
– Particles - eliminate source, chemical or mechanical
cleaning Si Si Si Si Si Si Si
– Organic Films - chemical, ozone, or plasma stripping
Si Si Si Si Si Si Si
– Water - dehydration bake, adhesion promoter
Si Si Si Si Si Si Si

© Chris Mack 4 © Chris Mack

Wafer 5

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 Photoresist Spin
Adhesion Promotion
Coating
A thin film of photoresist is coated onto the wafer by
• Dehydrate the wafer surface dispensing liquid photoresist and spinning the wafer.
– 100°C bake
– Vacuum Goals:
– Nitrogen purge • Correct thickness,
good uniformity
• Apply Adhesion Promoter to react with dangling
silicon bonds • Free of particles
and pinholes
– Hexamethyldisilizane (HMDS) is applied as a vapor
• Consistent
• Usually performed in the track lithographic
response
(Image from Wikimedia Commons)
© Chris Mack 6 © Chris Mack 7

Spin Speed Curve Photoresist Edge Bead

2

1 • Surface tension of the resist causes the

Resist Thickness (microns)

1.8
thickness ∝
1.6
ω formation of an edge bead during spin coating
1.4
High viscosity
1.2

0.8
Low viscosity • The edge bead can be several times thicker
than the nominal resist thickness
0.6
2000 2500 3000 3500 4000 4500 5000
Spin Speed (rpm)
© Chris Mack 8 © Chris Mack 9

Post-Apply Bake The Photomask

• The purpose of the post-apply bake step is to • A photomask (also called a reticle, or just mask)
remove residual solvent left after the spin coat, contains what you want to print on the wafer as
resulting in a stable resist film opaque patterns on a transparent substrate
• Typically 5-15% solvent remains after the post- • 6” square fused silica (quartz) substrate,
¼” thick
apply bake • Opaque regions are made of chrome or
molybdenum silicide (MoSi)
• Also called softbake or prebake • Making the photomask uses its own
lithography process, usually by using
beams of electrons to expose a resist
• Patterns on the photomask are defined
by the chip design data
• Typical mask is 4X bigger than the wafer
patterns
© Chris Mack 10 © Chris Mack (Toppan Photomasks) 11

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 Exposing the
Developing the Image
Photoresist

• The heart of the lithography process is imaging • Once exposed, the wafer comes out of the
the photomask onto the wafer scanner and back into the track
• Before exposure, the mask and wafer must • First the wafer is baked on a hotplate to complete
be aligned so that the new pattern lines up
with existing patterns on the wafer
Mask the chemical changes caused by exposure
• Light from a laser shines on the mask
• Transmitted light is collected by a very
• Then the wafer is developed
sophisticated (and expensive) imaging lens – Developer is poured or sprayed onto
• Image of the mask is projected onto the Lens
a slowly spinning wafer
photoresist coated wafer – Positive resist: developer removes the exposed parts
• Only a portion of the wafer is exposed at
– Negative resist: developer removes the unexposed parts
one time, so the wafer is stepped and/or
scanned under the lens to record multiple – A good resist is “high contrast” – a very nonlinear response to
Wafer
copies of the mask image exposure
© Chris Mack (Nikon Corp.) 12 © Chris Mack 13

Result: Patterns Printed Lecture 39:

in Photoresist What have we Learned?

• How many requirements for lithography can you name?

• What are the two main tasks of a photoresist?
• How does an adhesion promoter work?
• What is the relationship between resist thickness and spin
speed?
• What is an edge bead, why does it occur, and what do we
do about it?
• What is the purpose of a post-apply bake?
• Explain the two tones of photoresists

© Chris Mack 14 © Chris Mack 15

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