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    HW1 PDF

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    Nico Camerino
    This document provides instructions for EEE 51 Assignment 1 which is due on January 29, 2019. It consists of two problems involving BJT and MOSFET DC biasing circuits. For problem 1, students are asked to find the base-emitter voltage, collector current, and output voltage of a BJT circuit. For problem 2, students must determine various voltages and currents in a MOSFET circuit operating in either saturation or linear mode. Answer sheets should be color coded according to the student's lecture section - yellow for THQ, white for THU, and pink for WFX.

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    HW1 PDF

    Uploaded by

    Nico Camerino
    41 views2 pages
    This document provides instructions for EEE 51 Assignment 1 which is due on January 29, 2019. It consists of two problems involving BJT and MOSFET DC biasing circuits. For problem 1, students are asked to find the base-emitter voltage, collector current, and output voltage of a BJT circuit. For problem 2, students must determine various voltages and currents in a MOSFET circuit operating in either saturation or linear mode. Answer sheets should be color coded according to the student's lecture section - yellow for THQ, white for THU, and pink for WFX.

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    This document provides instructions for EEE 51 Assignment 1 which is due on January 29, 2019. It consists of two problems involving BJT and MOSFET DC biasing circuits. For problem 1, students are asked to find the base-emitter voltage, collector current, and output voltage of a BJT circuit. For problem 2, students must determine various voltages and currents in a MOSFET circuit operating in either saturation or linear mode. Answer sheets should be color coded according to the student's lecture section - yellow for THQ, white for THU, and pink for WFX.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    41 views2 pages

    HW1 PDF

    Uploaded by

    Nico Camerino
    This document provides instructions for EEE 51 Assignment 1 which is due on January 29, 2019. It consists of two problems involving BJT and MOSFET DC biasing circuits. For problem 1, students are asked to find the base-emitter voltage, collector current, and output voltage of a BJT circuit. For problem 2, students must determine various voltages and currents in a MOSFET circuit operating in either saturation or linear mode. Answer sheets should be color coded according to the student's lecture section - yellow for THQ, white for THU, and pink for WFX.

    Copyright:

    © All Rights Reserved
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    of 2

    EEE 51 Assignment 1

    2nd Semester SY 2018-2019


    Due: 5pm Tuesday, January 29, 2019 (Rm. 220)

    Instructions: Write legibly. Show all solutions and state all assumptions. Write your full name, student number,
    and section at the upper-right corner of each page. Start each problem on a new sheet of paper. Box or encircle
    your final answer.

    Answer sheets should be color coded according to your lecture section. The color scheme is as follows:

    THQ – yellow
    THU – white
    WFX – pink

    1. BJT DC Biasing
    For Figure 1, use the following values: R1 = 135kΩ, R2 = ∞, RC = 800Ω, RE = 0Ω, Is = 100f A, VA = ∞,
    and β = 120

    10V

    R1 RC
    IC VOU T
    IB
    V2 Q1

    R2 RE

    Figure 1: BJT Circuit

    (a) Find the base-emitter voltage, VBE , the collector current IC , and VOU T at T=300K (3 points)
    (b) Suppose RE is 200Ω and R2 is finite but has an unknown value
    i. Find the collector current IC such that VOU T = 5V (2 points)
    ii. Find the base-emitter voltage VBE , and the base current, IB (2 points)
    iii. Compute for the voltage across the unknown resistor, V2 (1 point)
    iv. Compute for the value of the unknown resistor R2 (2 points)

    2. MOSFET DC Biasing
    Shown in Figure 2 is an NMOS circuit with Drain, Source and Load Resistance RD , RS , RL . It is supplied by
    both positive and negative supply VDD = 0.8V and VSS = −0.8V . The NMOS has the following parameters
    which are k = 100µA/V 2 , VT H = 0.2V , λ = 0.

    1
    VDD

    RD

    VO
    IL
    ID
    RL
    VBIAS M1

    0.65V RS
    −

    VSS

    Figure 2: MOSFET Circuit

    Suppose VBIAS = 0.65V , IL = 20µA, and RD = 5kΩ

    (a) Find VGS (1.5 points)


    (b) Find ID . State all necessary assumptions. (2 points)
    (c) Find VDS of M1 (1.5 point)
    (d) From (a) to (c), is M1 in saturation or in linear mode? State and verify the condition for the chosen
    mode of operation. (1.5 points)
    (e) Find VO (1.5 points)
    (f) Find RS and RL (2 points)

    TOTAL: 20 points.

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