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Silicon VLSI Oxidation Models

1) The Deal-Grove model describes silicon dioxide growth through diffusion and reaction processes. It models oxide growth rate as proportional to the difference between oxidant concentrations at the Si/SiO2 interface and in the bulk oxide. 2) Stress occurs in grown silicon dioxide due to the large difference in thermal expansion coefficients between silicon and silicon dioxide. Various charges can also form at the silicon dioxide/silicon interface or in the bulk oxide. 3) The Deal-Grove model is generally valid for oxide thicknesses greater than 20nm. Other models have been proposed to better describe growth at thinner oxide thicknesses or with variations in pressure, temperature, or crystal orientation.

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Yosua Siregar
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70 views55 pages

Silicon VLSI Oxidation Models

1) The Deal-Grove model describes silicon dioxide growth through diffusion and reaction processes. It models oxide growth rate as proportional to the difference between oxidant concentrations at the Si/SiO2 interface and in the bulk oxide. 2) Stress occurs in grown silicon dioxide due to the large difference in thermal expansion coefficients between silicon and silicon dioxide. Various charges can also form at the silicon dioxide/silicon interface or in the bulk oxide. 3) The Deal-Grove model is generally valid for oxide thicknesses greater than 20nm. Other models have been proposed to better describe growth at thinner oxide thicknesses or with variations in pressure, temperature, or crystal orientation.

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Yosua Siregar
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SILICON VLSI TECHNOLOGY

Fundamentals, Practice and Modeling

CHAPTER 6
EX0250
For isolation

Stress can be relieved when


used under Si3N4 film

Deposited oxide is not used when layer is thinner


than 10 nm.
Grown SiO2: amorphous
Crystallization process
Fused silica: no bridging oxygen needs a much longer
Quartz: crystalline SiO2, has only time.
bridging oxygen

Bridging oxygen
Large compressive Stress in grown
SiO2 is cause by
• Expansion
• Large thermal expansion coefficient
difference between Si and SiO2.
Charges may occurs in the SiO2
layer
• Qf: fixed oxide charge, exist very close to the
interface, incompletely oxidized Si atoms that
have a net positive charge.
• Qit: incompletely oxidized Si atom with
unsatisfied or dangling bonds located in the oxide.
The charge associated with Oit may be positive,
neutral or negative.
• Qm, mobile oxide charge that may be located
anywhere in the oxide. They were unstable and
attributed to the presence of mobile ions like Na+
and K+ in the gate oxide.
Continue
• Qot: oxide trapped charge that may be
located anywhere in the oxide, are broken
Si – O bonds in the bulk of the oxide. These
broken bonds can capture holes or electrons,
resulting trapped charge.
HCl or TCA can be added, of which Cl may be
used to clean the furnace tube prior to or during
oxidation process.
Deal-Grove or Linear Parabolic Model
Si + O2 SiO2; Si + 2H2O SiO2 + 2H2

F1=hG(CG – CS) (1)


Or F1=h(C* - CO)
F2=D(CO – CI)/xO (2)
F3=kSCI (3)
Derivation of the Model
• Through Henry’s law:
CO = HPS; (4)
The equilibrium concentration of a gas species dissolved in a solid is
proportional to the partial pressure of that species at the solid surface.
Since PS may not be available in the experiments, one may use PG such
that,
C* = HPG (5)
Where C* is the oxidant concentration in the oxide that would be
equilibrium with PG. If F1 is not rate limiting step, then
C* ~ CO; PG ~ PS
Continue
• From ideal gas law,
CG = PG/kT; CS = PS/kT (6)
Substrate (4), (5), (6) into (1), one obtains
F1 = h(C* - CO)
Where h = hG/HkT.
Under steady state condition
• F1 = F2 = F3
(6.28) is good only when xO is greater than 20 nm.
B = C1exp (-E1/kT); B/A = C2 exp (-E2/kT)
The reason that SiO2 layer grows
much faster in H2O ambient than in
dry O2.
• Oxidant solubility in SiO2 is much higher for H2O
than for O2. At 1100oC, typical values for C* are ~
5x1016 cm-3 for dry O2 and ~ 3x1019 cm-3 for H2O.
Both rate constants, B and B/A are much larger for
H2O than for O2.
• Dry O2 oxidation are generally useful for
producing oxide films up to 100-200 nm. Film
thicker than this is grown using H2O ambient.
Other Models
• Deal-Grove model is good only for oxide greater
than 20 nm. For oxide growth in dry O2 with
thickness smaller than 20 nm, Reisman and
colleagues propose:
• xO = a(t + ti)b
• Or xO = a(t + (xi/a)1/b)b
where ti is the time corresponding to the growth of
any existing oxide (xi) at the start of the process.
From experimental fit, b = 0.25 ~ 1.
Han and Helm proposes
Massoud and colleagues proposes
Dependence of Growth Kinetics on
Pressure (From Experimental Data)
• For H2O, both B, B/A depends on PG. This
agrees with Deal-Grove model.
• For O2,
B ~ P; B/A ~ Pn (0.5<n<1)
Dependence of Growth Kinetics on
Crystal Orientation
• For B which is diffusion through SiO2 and
is not crystal orientation dependence.
• For B/A which is reaction at the interface
and is crystal orientation dependence.
(B/A)110 = 1.45(B/A)100
(B/A)111 = 1.68(B/A)100

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