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Vlsi Lab Manual

The document is a laboratory manual for a VLSI and Microcontroller lab. It contains summaries and procedures for 10 experiments involving designing basic digital logic gates and circuits like inverters, NAND gates, flip-flops in both schematic and layout views using VLSI design software and simulating their transient characteristics. The experiments cover designing combinational and sequential logic circuits as well as basic components like a 4-bit asynchronous counter. The manual was prepared by faculty of the Electronics and Communication Engineering department of a university to instruct students on using VLSI design tools and simulation.

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Sandeep V Gowda
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© Attribution Non-Commercial (BY-NC)
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0% found this document useful (0 votes)
3K views

Vlsi Lab Manual

The document is a laboratory manual for a VLSI and Microcontroller lab. It contains summaries and procedures for 10 experiments involving designing basic digital logic gates and circuits like inverters, NAND gates, flip-flops in both schematic and layout views using VLSI design software and simulating their transient characteristics. The experiments cover designing combinational and sequential logic circuits as well as basic components like a 4-bit asynchronous counter. The manual was prepared by faculty of the Electronics and Communication Engineering department of a university to instruct students on using VLSI design tools and simulation.

Uploaded by

Sandeep V Gowda
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
You are on page 1/ 27

Edition

2006
DEPARTMENT OF ELECTRONICS & COMMUNICATION
ENGINEERING

Laboratory Manual

VLSI & MICROCONTROLLER LAB (ECL 78)

Prepared by:
B.S.KARIYAPPA C.S.MALA
ASST.PROFESSOR ASST.PROFESSOR
ECE DEPARTMENT ECE DEPARTMENT
RVCE RVCE

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 1


EXPERIMENT 1 : STATIC CHARACTERISTICS OF INVERTER IN
SCHEMATIC

AIM :
Design a CMOS inverter in schematic and simulate for Transient Characteristics.

PROCEDURE :

Run the VLSI software for schematic entry. From the tool bar drag and drop the one
pMOS and one nMOS transistor models. Using the wire form the tool bar connect the
transistors as shown in the schematic circuit. Give a Clock as the input and simulate for
the output.

Out1= NOT(a)

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 2


EXPERIMENT 2 : STATIC CHARACTERISTICS OF TWO INPUT NAND
GATE, TWO INPUT NOR GATE, TWO INPUT AND GATE, TWO INPUT OR
GATE IN SCHEMATIC

AIM :
Design a CMOS two input NAND gate, Two input NOR gate, Two input AND gate and
Two input OR gate in schematic and simulate for Transient Characteristics.

PROCEDURE :

Run the VLSI software for schematic entry. From the tool bar drag and drop the required
number of pMOS and one nMOS transistor models. Using the wire form the tool bar
connect the transistors as shown in the schematic circuit. Give a Clock as the input and
simulate for the output.
Two Input NOR gate

F= NOT(A+B)

Two Input NAND gate

OUT1=NOT(IN1 AND IN2)

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 3


Two Input AND gate

OUT=A AND B

Two Input OR gate

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 4


OUT= A OR B

EXPERIMENT 3 : STATIC CHARACTERISTICS OF INVERTER IN LAYOUT

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 5


AIM :
Design the layout of a CMOS Inverter and simulate for DC(Transfer) and Transient
characteristics.

PROCEDURE :

Run the VLSI software for layout entry. Paint Ndiffussion with proper design rules.
Paint Nwell. Put Pdiffusion. Draw POLY over the diffusions as shown in the layout
diagram. Put the appropriate diffusion contacts and do connections for VDD and GND.
Connect the output contacts using the metal. Label for input and outputs. Assign
appropriate Clock input and simulate for the output. Click appropriate option for DC
characteristics and observe the DC (Transfer) characteristics.

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 6


EXPERIMENT 4 : TRANSFER AND TRANSIENT CHARACTERISTICS OF
TWO INPUT NAND GATE, TWO INPUT OR GATE, TWO INPUT AND GATE
AND TWO INPUT AND GATE IN LAYOUT

AIM :
Design the layout for two input NANDgate, three input OR gate, two input AND gate
and two input AND gate.and simulatelate for DC(Transfer) and Transient characteristics.

PROCEDURE :

Run the VLSI software for layout entry. Paint Ndiffussion with proper design rules.
Paint Nwell. Put Pdiffusion. Draw POLY over the diffusions as shown in the layout
diagram. Put the appropriate diffusion contacts and do connections for VDD and GND.
Connect the output contacts using the metal. Label for input and outputs. Assign
appropriate Clock input and simulate for the output. Click appropriate option for DC
characteristics and observe the DC (Transfer) characteristics.

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 7


DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 8
DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 9
EXPERIMENT 5 : REALISE A 2 INPUT EXOR GATE
AIM : Realise a two input EXOR gate in schematic and draw its layout and simulate

PROCEDURE :

Run the VLSI software for schematic entry. From the tool bar drag and drop the required
number of pMOS and one nMOS transistor models. Using the wire form the tool bar
connect the transistors as shown in the schematic circuit. Give a Clock as the input and
simulate for the output.
Run the VLSI software for layout entry. Paint Ndiffussion with proper design rules.
Paint Nwell. Put Pdiffusion. Draw POLY over the diffusions as shown in the layout
diagram. Put the appropriate diffusion contacts and do connections for VDD and GND.
Connect the output contacts using the metal. Label for input and outputs. Assign
appropriate Clock input and simulate for the output. Click appropriate option for DC
characteristics and observe the DC (Transfer) characteristics.

OUT  NOT ( A B + AB)

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 10


DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 11
EXPERIMENT 6 : REALISE A 1 BIT FULL ADDER IN CMOS SCHEMATIC
AND SIMULTATE. GENERATE LAYOUT USING TOOL OPTION AND
SIMULATE

AIM : TO realise a 1 bit full adder in CMOS schematic and simultate. generate layout
using tool option and simulate

PROCEDURE :

Run the VLSI software for schematic entry. From the tool bar drag and drop the required
number of pMOS and one nMOS transistor models. Using the wire form the tool bar
connect the transistors as shown in the schematic circuit. Give a Clock as the input and
simulate for the output.
SUM  A  B  C
CARRY=AB+BC+CA

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 12


Wave forms of one bit Full adder

Layout of one Bit Full adder

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 13


EXPERIMENT 7: REALISE A BOOLEAN EXPRESSION Y=NOT((A+B)(C+D)E)
IN SCHEMATIC AND DRAW ITS LAYOUT AND SIMULATE

AIM : TO realise a Boolean expression Y=Not((A+B)(C+D)E) in schematic and draw


its layout and simulate.

PROCEDURE :

Run the VLSI software for schematic entry. From the tool bar drag and drop the required
number of pMOS and one nMOS transistor models. Using the wire form the tool bar
connect the transistors as shown in the schematic circuit. Give a Clock as the input and
simulate for the output.
Run the VLSI software for layout entry. Paint Ndiffussion with proper design rules.
Paint Nwell. Put Pdiffusion. Draw POLY over the diffusions as shown in the layout
diagram. Put the appropriate diffusion contacts and do connections for VDD and GND.
Connect the output contacts using the metal. Label for input and outputs. Assign
appropriate Clock input and simulate for the output. Click appropriate option for DC
characteristics and observe the DC (Transfer) characteristics.

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 14


DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 15
EXPERIMENT 8 : 4 X 1 MUX USING TRANSMISSION GATES

AIM : To Realize a 4 X 1 MUX using transmission gates in schematic and layout and
simulate.

PROCEDURE :

Run the VLSI software for schematic entry. From the tool bar drag and drop the required
number of pMOS and one nMOS transistor models. Using the wire form the tool bar
connect the transistors as shown in the schematic circuit. Give a Clock as the input and
simulate for the output.

Theory : CMOS transmission gate is created by connecting an nFET and pFET in


Parallel as shown. If sel=0 nFET is OFF and pFET is OFF and TG acts as Open switch.
When sel=1 then TG acts as closed switch. It does not have threshold voltage drop
problems. It can be used as for transmitting any voltage (0,Vdd) from left to right and
vice versa..
A 4X1 Multiplexer can be designed using transmission gates as shown in Fig.
below. The schematic works as per the truth table given below:
S1 S0 OUT
0 0 I0
0 1 I1
1 0 I2
1 1 I3

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 16


DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 17
EXPERIMENT 9: D FLIP FLOP, JK FLIPFLOP AND T FLIP FLOP IN CMOS
SCHEMATIC AND LAYOUT

AIM : To Realsie D FLIPFLOP, JK FLIPFLOP and T FLIPFLOP in CMOS schematic


and layout and simulate

PROCEDURE :

Run the VLSI software for schematic entry. From the tool bar drag and drop the required
number of pMOS and one nMOS transistor models. Using the wire form the tool bar
connect the transistors as shown in the schematic circuit. Give a Clock as the input and
simulate for the output.
Run the VLSI software for layout entry. Paint Ndiffussion with proper design rules.
Paint Nwell. Put Pdiffusion. Draw POLY over the diffusions as shown in the layout
diagram. Put the appropriate diffusion contacts and do connections for VDD and GND.
Connect the output contacts using the metal. Label for input and outputs. Assign
appropriate Clock input and simulate for the output. Click appropriate option for DC
characteristics and observe the DC (Transfer) characteristics.

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 18


For T flip-flop short J and K.

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 19


EXPERIMENT 10: FOUR BIT ASYNCHRONOUS COUNTER USING T
FLIPFLOP AS A CELL IN SCHEMATIC.

AIM : To Realsie a four bit asynchronous counter using T flipflop as a cell in schematic

PROCEDURE :

Run the VLSI software for schematic entry. From the library drag the T flip flop cells and
connect them as shown in schematic. Give a Clock and Input and simulate for the output.

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 20


EXPERIMENT 11: FOUR BIT SYNCHRONOUS COUNTER USING T
FLIPFLOP AS A CELL IN SCHEMATIC.

AIM : To Realsie a four bit synchronous counter using T flipflop as a cell in schematic

PROCEDURE :

Run the VLSI software for schematic entry. From the library drag the T flip flop cells and
connect them as shown in schematic. Give a Clock and Input and simulate for the output.

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 21


EXPERIMENT 12: FOUR BIT SHIFT REGISTER USING D FLIPFLOP AS A
CELL IN SCHEMATIC.

AIM : To Realsie a four bit shift register using D flipflop as a cell in schematic

PROCEDURE :

Run the VLSI software for schematic entry. From the library drag the D flip flop cells
and connect them as shown in schematic. Give a Clock and Input and simulate for the
output.

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 22


EXPERIMENT 13: DESIGN OF SCHMITT TRIGGER

AIM : Design a Schmitt trigger for the ratio (1/3)=6) and (4/6)=3) in layout.
Calculate UTP and LTP and verify the values by simulation. Assume Vdd=1.2v,
Vtn=0.4vand |Vtp|=0.5v. Show the hysterisis curve.

PROCEDURE : Calculate the required W and L from the given parameters. Draw the
layout as shown in the layout. Give a sine wave signal as input and simulate. Use the tool
option to observe the hysterisis curve.

Theory : The Schematic of Schmitt Trigger is shown below. M1 and M2 are in series and
are driven by in1. When in1=0 Vout =Vdd and M3 is ON which acts as feedback path.
As in1 is increased it keeps M2 off even after M1 is turned on. The UTP is given by

UTP  (Vdd  1 /  3 Vt,n) /(1+ 1/  3 )


 1 /  3  (W / L )1 /(W / L )3
Similarly M6 is feedback resistor for pFET group. The LTP is given by

LTP  (  4 /  6 (Vdd  | Vt , p |) /(1+ 4/ 6 )


 4 /  6  (W / L) 4 /(W / L)6
Design example : Let UTP =1.45V and LTP= 1.67 V

UTP:  1 /  3  (Vdd  UTP ) /(UTP  Vt , n) = 2.44


 1 /  3  6 and (W/L)1/(W/L)3 = 6
M1 width = 6 x width of M3

LTP:  4 /  6  ( LTP /(Vdd  | Vt , p |  LTP ) = 2


 4 /  6  4 and (W/L)4/(W/L)6 = 4
M4width = 4 x width of M6

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 23


DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 24
DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 25
Hysterisis Characteristics

DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 26


DEPT OF E & CE, R.V.C.E. VLSI & MICROCONTROLLER LAB MANUAL 27

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