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ECE 331: Introduction To Materials For Electrical Engineers

This document provides an overview of ECE 331: Introduction to Materials for Electrical Engineers. The course introduces fundamental concepts in materials science and how material structure dictates properties. Students will learn about material structure, the relationship between structure and properties, and how electronic and physical properties are related. The course helps students use materials properly, realize new design opportunities with materials, and understand the physics of semiconductor devices.

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mohit
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0% found this document useful (0 votes)
92 views15 pages

ECE 331: Introduction To Materials For Electrical Engineers

This document provides an overview of ECE 331: Introduction to Materials for Electrical Engineers. The course introduces fundamental concepts in materials science and how material structure dictates properties. Students will learn about material structure, the relationship between structure and properties, and how electronic and physical properties are related. The course helps students use materials properly, realize new design opportunities with materials, and understand the physics of semiconductor devices.

Uploaded by

mohit
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ECE 331: Introduction to Materials for

Electrical Engineers
Course Objective...
Introduce fundamental concepts in Materials
Science and how they are used in ECE
You will learn about:
• material structure
• how structure dictates properties
• how electronic & physical properties are related
This course will help you to:
• use materials properly
• realize new design opportunities with materials
• understand the physics of semiconductor devices

ECE331 Wi11 lecture 1


ECE 331 – Intro to Materials for ECE

Materials in ECE are: semiconductors, metals (e.g.


Al contacts),
t t ) polymers
l ((e.g. encapsulants
l t ffor LED
LEDs))
and insulators (ceramics such as silicon dioxide in
FETs))

Materials in ECE are single crystals, polycrystals,


amorphous
h layers
l and
d nanostructures
t t

Si (silicon) is NOT the only semiconductor (though


Si electronics is the world’s largest manufacturing
industry), but it is the most important one and will
remaini so!!

ECE331 Wi11 lecture 1


ECE 331 – Intro to Materials for ECE

III-V examples
GaAs
InP
InAs
AlGaAs
InGaAs
InGaAsP
G N
GaN
InGaN

•Know your periodic table! III - V


•Find your old chemistry notes!
ECE331 Wi11 lecture 1
Materials Roadmap for Device Technologies: the
Bandgap vs Lattice Constant Relationship

ECE applications
are
III V electronics
III-V expanding across
CD Lasers
Fiber pump lasers this entire space!
Space solar

CMOS, BiCMOS,
CMOS BiCMOS
Terrestrial solar, Telecomm
Power CMOS Optoelectronics
thermophotovoltaics

ECE331 Wi11 lecture 1


TECHNOLOGY ROADMAPS:
New Age for ECE Materials and opportunities
Roadmaps are calling for unusual properties not
obtainable using conventional materials or processes
• Electronics:
- Nanoscale patterning
- optical interconnects
- speed enhancing materials

• Optoelectronics:
- tunable light emission/detection wavelengths
- seamless integration with electronic systems

• Alternative Energy:
- clean, renewable, cheap, safe, autonomous

- Biocompatiblity and medicine


ECE331 Wi11 lecture 1
The Materials Selection Process

1. Pick Application Determine required Properties


Properties: mechanical, electrical, thermal,
magnetic, optical, deteriorative.

2. Properties Identify candidate Material(s)


Material: structure, composition.

3. Material Identify required Processing


Processing: changes structure and overall shape
ex: casting, sintering, vapor deposition, doping
forming, joining, annealing.

ECE331 Wi11 lecture 1


ELECTRICAL
• Electrical Resistivity of Copper:
6 Adapted from Fig.g 18.8, Callister 7e.
(Fig. 18.8 adapted from: J.O. Linde,
5 Ann Physik 5, 219 (1932); and
C.A. Wert and R.M. Thomson,
r

Physics of Solids, 2nd edition,


0-8 Ohm-m)
esistivity,

4 McGraw-Hill Company, New York,


1970 )
1970.)

3
2
(10
Re

1
0
-200 -100 0 T (°C)
• Adding “impurity” atoms to Cu increases resistivity.
• Deforming Cu increases resistivity.

ECE331 Wi11 lecture 1


THERMAL
• Space Shuttle Tiles: • Thermal Conductivity
--Silica fiber insulation of Copper:
offers low heat conduction. - decreases when you add zinc!

Adapted from chapter-

onductiviity
opening photograph, 400
Chapter 19, Callister
7e. (Courtesy of
Lockheed 300

(W//m-K)
Missiles and Space
Company, Inc.)
200

hermal Co
100
0
Th
0 10 20 30 40
Adapted from Composition (wt% Zinc)
Fig. 19.4W, Callister Adapted from Fig. 19.4, Callister 7e.
6e. (Courtesy of (Fig. 19.4 is adapted from Metals Handbook:
Lockheed Aerospace p
Properties and Selection: Nonferrous alloys
y
C
Ceramics S
Systems, and Pure Metals, Vol. 2, 9th ed., H. Baker,
Sunnyvale, CA) (Managing Editor), American Society for
(Note: "W" denotes Metals, 1979, p. 315.)
fig. is on CD-ROM.)
100 mm
ECE331 Wi11 lecture 1
MAGNETIC
• Magnetic Storage: • Magnetic Permeability
--Recording medium vs. Composition:
is magnetized by --Adding 3 atomic % Si
recording head. makes Fe a better
recording
g medium!

zation
Fe+3%Si

Magnetiz
Fe
F

M Magnetic Field
Adapted from C.R. Barrett, W.D. Nix, and
Fig. 20.23, Callister 7e. A.S. Tetelman, The Principles of
(Fig 20
(Fig. 20.23
23 is from J
J.U.
U Lemke
Lemke, MRS Bulletin
Bulletin, Engineering Materials, Fig. 1
1-7(a),
7(a), p. 9,
Vol. XV, No. 3, p. 31, 1990.) 1973. Electronically reproduced
by permission of Pearson Education, Inc.,
Upper Saddle River, New Jersey.

ECE331 Wi11 lecture 1


OPTICAL
• Transmittance:
--Aluminum oxide may be transparent, translucent, or
opaque depending on the material structure.
polycrystal: polycrystal:
single
g crystal
y low p
porosity
y high
g porosity
p y

Adapted from Fig. 1.2,


Callister 7e.
(Specimen preparation,
P.A. Lessing; photo by S.
Tanner )
Tanner.)

ECE331 Wi11 lecture 1


Photovoltaics and the role of materials

ECE331 Wi11 lecture 1


ECE331 Wi11 lecture 1
Conversion of radiant heat to electricity:
Thermophotovoltaics
p
Front Contact

Grid Finger
Interconnect

n InPAs window
n/p InGaAs
Emitter/Bas
e
p InPAs BSF
p/n InGaAs TJ
n InPAs Buffer

S iI
Semi-Insulating
l ti InP
I P

SiN/Gold Back Surface Reflector


SEM Micrograph Of Processed Ternary
MIM Structure

23

System Effficiency (%)


• Efficiency ~18% 22 26.7°C
26.7°C
21
• With addition of a a front 20
25.6°C
surface filter 19
18 25.6°C
– 0.9 W/cm2
power density 17
16
- h = 20.6% at a radiator 15
temperat re of 1058°C
temperature 1058°C. 850 900 950 1000 1050 1100
Radiator Temperature (°C)

ECE331 Wi11 lecture 1


Wide Bandgap Semiconductors – GaN:
Energy-Efficient
gy Solid State Lighting
g g (SSL)
( )
• Al-Ga-In-N spans uv-blue-green-red-near ir spectrum

National SSL Initiative: by 2020:


• save $115B
50% of elec.used
elec used by lighting: • eliminate 258M metric ton of C
emission
ECE331 Wi11 lecture 1
SUMMARY
Course Goals:
• Use the right material for the job
job.

• Understand the relation between properties,


structure, and processing.

• Recognize new design opportunities offered


by materials selection.
• Appreciate the relationship between devices,
devices
their characteristics and their constituent materials

ECE331 Wi11 lecture 1

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