FMMT4402 SOT23 PNP SILICON PLANAR FMMT4402

FMMT4403 GENERAL PURPOSE TRANSISTOR FMMT4403

ISSUE 2 - MARCH 1995 ✪

SWITCHING CHARACTERISTICS (at Tamb= 25°C )

PARTMARKING DETAILS: FMMT4402 - 2K E
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS C
FMMT4403 - 2L
Turn-On Time ton 35 ns VCC=-30V, VBE(off)=-2V
IC=-150mA, IB1=-15mA
(See Fig.1) B

Turn-Off Time t off 255 ns VCC=-30V, IC=-150mA ABSOLUTE MAXIMUM RATINGS.

IB1=IB2=-15mA
(See Fig. 2) PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC -600 A
Power Dissipation at Tamb=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
FMMT4402 FMMT4403
PARAMETER SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS
Collector-Emitter V(BR)CEO -40 -40 V IC=-1mA, IB=0
Breakdown Voltage
Collector-Base V(BR)CBO -40 -40 V IC=-0.1mA, IE=0
Breakdown Voltage
Emitter-Base V(BR)EBO -5 -5 V IE=-0.1mA, IC=0
Breakdown Current
Collector-Emitter ICEX -0.1 -0.1 µA VCE=-35V
Cut-Off Current VEB(off) =-0.4V
Base Cut-Off IBEX -0.1 -0.1 µA VCE=-35V
Current VEB(off) =-0.4V
Static Forward hFE 30 IC=-0.1mA, VCE=-1V
Current 30 60 IC=-1mA, VCE=-1V
TransferRatio 50 100 IC=-10mA, VCE=-1V
50 150 100 300 IC=-150mA,VCE=-2V*
20 20 IC=-500mA,VCE=-2V*
Collector-Emitter VCE(sat) -0.4 -0.4 V IC=-150mA,IB=-15mA*
Saturation Voltage -0.75 -0.75 V IC=-500mA,IB=-50mA*
Base-Emitter VBE(sat) -0.75 -0.95 -0.75 -0.95 V IC=-150mA,IB=-15mA*
Saturation Voltage -1.3 -1.3 V IC=-500mA,IB=-50mA
Transition fT 150 200 MHz IC=-20mA,VCE=-10V
Frequency f=100MHz
Output Capacitance Cobo 8.5 8.5 pF VCB=-10 V,IE=0
f=100kHz
Input Capacitance Cibo 30 30 pF VBE=0.5V
IC=0, f=100kHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

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 FMMT4402 SOT23 PNP SILICON PLANAR FMMT4402
FMMT4403 GENERAL PURPOSE TRANSISTOR FMMT4403
ISSUE 2 - MARCH 1995 ✪

SWITCHING CHARACTERISTICS (at Tamb= 25°C )

PARTMARKING DETAILS: FMMT4402 - 2K E
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS C
FMMT4403 - 2L
Turn-On Time ton 35 ns VCC=-30V, VBE(off)=-2V
IC=-150mA, IB1=-15mA
(See Fig.1) B

Turn-Off Time t off 255 ns VCC=-30V, IC=-150mA ABSOLUTE MAXIMUM RATINGS.

IB1=IB2=-15mA
(See Fig. 2) PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC -600 A
Power Dissipation at Tamb=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
FMMT4402 FMMT4403
PARAMETER SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS
Collector-Emitter V(BR)CEO -40 -40 V IC=-1mA, IB=0
Breakdown Voltage
Collector-Base V(BR)CBO -40 -40 V IC=-0.1mA, IE=0
Breakdown Voltage
Emitter-Base V(BR)EBO -5 -5 V IE=-0.1mA, IC=0
Breakdown Current
Collector-Emitter ICEX -0.1 -0.1 µA VCE=-35V
Cut-Off Current VEB(off) =-0.4V
Base Cut-Off IBEX -0.1 -0.1 µA VCE=-35V
Current VEB(off) =-0.4V
Static Forward hFE 30 IC=-0.1mA, VCE=-1V
Current 30 60 IC=-1mA, VCE=-1V
TransferRatio 50 100 IC=-10mA, VCE=-1V
50 150 100 300 IC=-150mA,VCE=-2V*
20 20 IC=-500mA,VCE=-2V*
Collector-Emitter VCE(sat) -0.4 -0.4 V IC=-150mA,IB=-15mA*
Saturation Voltage -0.75 -0.75 V IC=-500mA,IB=-50mA*
Base-Emitter VBE(sat) -0.75 -0.95 -0.75 -0.95 V IC=-150mA,IB=-15mA*
Saturation Voltage -1.3 -1.3 V IC=-500mA,IB=-50mA
Transition fT 150 200 MHz IC=-20mA,VCE=-10V
Frequency f=100MHz
Output Capacitance Cobo 8.5 8.5 pF VCB=-10 V,IE=0
f=100kHz
Input Capacitance Cibo 30 30 pF VBE=0.5V
IC=0, f=100kHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

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