BUL1203EFP: High Voltage Fast-Switching NPN Power Transistor

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® BUL1203EFP

HIGH VOLTAGE FAST-SWITCHING


NPN POWER TRANSISTOR

■ HIGH VOLTAGE CAPABILITY


■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING

APPLICATIONS 3
■ ELECTRONIC BALLASTS FOR 2
1
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES) TO-220FP

DESCRIPTION
The BUL1203EFP is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight h FE range while
maintaining a wide RBSOA. INTERNAL SCHEMATIC DIAGRAM
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.

ABSOLUTE MAXIMUM RATINGS


Symbol Parameter Value Unit
V CBO Collector-BaseVoltage (I E = 0) 1200 V
V CES Collector-Emitter Voltage (V BE = 0) 1200 V
V CEO Collector-Emitter Voltage (I B = 0) 550 V
V EBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 5 A
I CM Collector Peak Current (t p < 5 ms) 8 A
IB Base Current 2 A
I BM Base Peak Current (t p < 5 ms) 4 A
P tot Total Dissipation at T c = 25 o C 36 W
V isol Insulation Withstand Voltage (RMS) from All 1500 V
Three Leads to Exernal Heatsink
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C

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BUL1203EFP

THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 3.47 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CES Collector Cut-off V CE = 1200 V 100 µA
Current (V BE = 0)
I CEO Collector Cut-off V CE = 550 V 100 µA
Current (I B = 0)
V CEO(sus) ∗ Collector-Emitter I C = 100 mA L = 25 mH 550 V
Sustaining Voltage
(I B = 0)
V EBO Emitter-Base Voltage I E = 10 mA 9 V
(I C = 0)
V CE(sat) ∗ Collector-Emitter IC = 1 A I B = 0.2 A 0.5 V
Saturation Voltage IC = 2 A I B = 0.4 A 0.7 V
IC = 3 A IB = 1 A 1.5 V
V BE(sat) ∗ Base-Emitter IC = 2 A I B = 0.4 A 1.5 V
Saturation Voltage IC = 3 A IB = 1 A 1.5 V
h FE ∗ DC Current Gain IC = 1 mA V CE = 5 V 10
IC = 10 mA V CE = 5 V 10
IC = 0.8 A V CE = 3 V 14 32
IC = 2A V CE = 5 V 9 28
RESISTIVE LOAD IC = 2 A I B1 = 0.4 A
t on Turn-on Time I B2 = -0.8 A tp = 30 µs 0.5 µs
ts Storage Time V CC = 150 V (see figure 2) 2.5 3.0 µs
tf Fall Time 0.2 0.3 µs
E ar Repetitive Avalanche L = 2 mH C = 1.8 nF 6 mJ
Energy V CC = 50 V V BE = -5 V
(see figure 3)
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area Derating Curve

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BUL1203EFP

DC Current Gain DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Inductive Load Storage Time Inductive Load Fall Time

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BUL1203EFP

Reverse Biased Safe Operating Area

Figure 1: Inductive Load Switching Test Circuit

Figure 2: Resistive Load Switching Test Circuit

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BUL1203EFP

Figure 3: Energy Rating Test Circuit

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BUL1203EFP

TO-220FP MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3
L6
L7
F1

¯
G1

G
H

F2

1 2 3
L2 L4

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BUL1203EFP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.

© 2003 STMicroelectronics – All Rights reserved


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