ECE-Kuwait University Dr. A.

Al-Omar
EE 233 Midterm 1 Fall 2015/16

Name: Ideal ID:

There are 15 points in the exam.

Problem 1 (5 points): Fig. P9.48

In the following Op-Amp circuit. find va

the output voltage in terms of vi.

Vo = 11 vI I1 I2
I3
Ideal op-amp leads to virtual v-
short and i- = 0. 0
v− = v+ = v I ( 1 2 point) virtual − short I1
vI
I1 = ( 1 2 point)
R
vI
va = v− + 2RI1 = v I + 2R = 3v I ( 1 2 point)
R
va 3v I
I2 = = ( 1 2 point)
R R
v I 3v I 4v I
I 3 = I1 + I 2 = + = (1 point)
R R R
4v
vO = va + 2RI 3 = 3v I + 2R I = 11v I (2 points)
R

Dr. Al-Omar ECE-Kuwait University

 2

Problem 2 (4 points):

Find the transfer characteristics vo(vi) for the following circuit over the range
−10 ≤ Vin ≤ 10 . Indicate the state for the Zener diode D1. The diode have a
forward voltage drop of 0.7 V and a Zener breakdown VZK= 5 V. V 2 kΩ Vout
in

Z
Transfer Characteristics
10

6 -2 V

4 3 V
2

0 V
-10 -8 -6 -4 -2 0 2 4 6 8 10
-2
-2.7 V
-4

-6

-8

-10

Vin 2 kΩ Vout
There 3 regions for the diode
A- D is FB for Vin < -2.7 V
Vput = -2.7 V (1 pts) Z

0.7 V

B- D is FB for 3 > Vin > -2.7 V 2 kΩ

Vin Vout
Vput = Vin (1 pts) -2 V

C – D is in breakdown for Vin > 3 V

Vin 2 kΩ Vout

Vput = 3 V (1 pts) -2 V
Z
5V

-2 V
 3

Problem 3 (4 points):
Find VO, ID1 , and ID2 in the following circuits. Indicate the
state for the diodes D1 and D2. Both diodes have a forward
voltage drop of 0.7 V.
VO = 9.53 V
ID1
ID1 = 0.953 mA 0.7 V

ID2 = 0 A

D1 is FB and D2 is RB (1pts)

15 − 0.7
I D1 = = 0.953 mA (1pts)
5 + 10
VO = 10I D1 = 9.53 V (1pts)
I D 2 = 0 mA (1pts)
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Problem 4 (2 points):
A Si wafer is uniformly doped with N D = 1015 phosphorous atoms/cm3. With
µn = 1350 cm 2 / V − s and µ p = 500 cm 2 / V − s find
(a) electrons and holes concentrations, and the resistivity at room
temperature where ni = 1010 cm −3 .
(b) electrons and holes concentrations at T= 550 K, where ni = 1015 cm −3
a ρ = 4.63
n= 1015 / cm3 p= 105cm−3 Ωcm

b ρ = 2.507 Ωcm
n= 1.618 × 1015 / cm3 p= 6.18 × 1014 cm−3

N D ≫ ni2 → n = N D = 1015 / cm3 (1/ 4 pts)

( )
2
ni2 1010
p= = = 105cm−3 (1/ 4 pts)
n 1015
1
a- ρ=
qµ n n + qµ p p
1
=
1.6 × 10 −19
(
× 1350 × 1015 + 500 × 105 )
= 4.63 Ωcm (1/ 2 pts)
b-

2 2
N + − N A− ⎛ N + − N A− ⎞ ⎛ 1015 ⎞
1015
( )
2
n= D + ⎜ D ⎟ + ni
2
= + ⎜⎝ 2 ⎟⎠ + 10
15
= 1.618 × 1015 / cm3 (1/ 4 pts)
2 ⎝ 2 ⎠ 2

( )
2
ni2 1015
p= = = 6.18 × 1014 cm−3 (1/ 4 pts)
n 1.618 × 1015
1
ρ=
qµ n n + qµ p p
1
=
(
1.6 × 10−19 × 1350 × 1.618 × 1015 + 500 × 6.18 × 1014 )
= 2.507 Ωcm (1/ 2 pts)
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Cheat Sheet
Physical Constants: For Si
q = 1.602 ×10−19 C , ε0 = 8.854 ×10−14 F /cm , n i = 1010 cm−3 , E g = 1.124eV
kT
NC = 2.8 ×1019 cm −3 , NV = 1.04 ×1019 cm −3 , VT = = 25 mV
q T = 300K
for majority carriers µn = 1500 cm 2 /(V - s) , and µ p = 475 cm2 /(V - s)
Carrier Concentration:
pn = ni2
for homogeneous semiconductor p − n + N d+ − N −A = 0
2
N + − NA− ⎛ N + − N −A ⎞ n2i
for n-type material n = D + ⎜ D + ni2 , p=
2 ⎝ 2 ⎠ n
l
conductivity σ = qµ n n + qµ p p resistivity ρ = 1/σ , and Resistance R =
σA
The I-V characteristics for NMOS transistor is given by:
⎧
⎪0 VGS ≤ V T cut − off
⎪ W⎛
ID (V GS ,V DS ) = ⎨k ′ ⎝ VGS − V T − DS ⎞⎠ V DS VGS > V T and V DS ≤ V GS − V T
V
triode
L 2
⎪ k ′W
(V − V T )
2
⎪ VGS > V T and V DS > V GS − V T saturation
⎩ 2L GS

Diode

⎛ ηVV ⎞
I-V characterisitcs ID (V ) = IS ⎜ e T − 1⎟
⎝ ⎠
ηV
rd = T
ID
Rectifier ripple voltage
VT
Half wave vr = p
RC
VT
Full wave vr = p
2RC