N.

CHEUNG EE143, Sp 2006

Homework Assignment #4 (Due Feb 23, Thur 8am)

Note: Different textbooks use either C(x) or N(x) to represent the concentration, and Q or φ to
represent the dopant dose.

Reading Assignment
1)Jaeger, Chapter 4 on diffusion [ Van der pauw’s Method (section 4.7.4) for sheet resistance and
junction profile measurement (section 4.8) are optional. ]
2) EE143 Reader : Wolf and Tauber , Chapter 9, “Diffusion in Silicon” Read the whole chapter.
However, you only need to have qualitative understanding of the following sections:
Section 9.3 Atomistic Models of Diffusion
Section 9.4 Diffusion Modeling
Section 9.8 Diffusion Systems and diffusion sources
Section 9.9 Measurement Techniques for Diffused Layers
3) Handout : Notes on Mathematics of Doping Diffusion

Problem 1 Simple predep calculation (how to use the erfc function)

A boron predeposition step is performed into an n-type Si substrate with a background concentration CB
of 1 ×1016/cm3. The predeposition thermal cycle is 975 oC for 15 minutes.
Given: Boron solid solubility at 975 oC = 3.5 × 1020/cm3
Boron diffusion constant at 975 oC = 1.5 ×10-14 cm2/sec
(a) Calculate the junction depth xj.
(b) Calculate the incorporated boron dose Q.

Problem 2 Predep followed by Drive-in

A pn junction is to be formed 1µm from the surface in n-type Si substrate, which has a doping
concentration of 1017 phosphorus atoms per cm3.

The junction is formed by a two-step diffusion of boron:

The predep is solid-solubility limited at 1000°C and the drive-in is at 1100°C.
After the drive-in step, the sheet resistance is 50Ω/square.
(Given: D0=10.5 cm2/sec and Ea=3.69eV for Boron diffusion. Use the solid solubility limit curve in Fig
4.6 and Irvin’s curves in Fig. 4.16 of Jaeger as neccesary).

Find out the appropriate diffusion times for both the (1) predep and (2) drive-in steps.

Problem 3 Thermal budget – Multiple Drive-in steps

Boron is diffused into n-type Si substrate with a background concentration of 1015/cm3.

After a drive-in step (i.e., half-gaussian profile) , you obtain a sheet resistance RS of 44 Ω/square and a
junction depth of 6 µm.
This junction depth is shallower than what you want and you put the wafers back into the furnace and heat
them at 1150°C for an additional 6.5 hours.

[ GIVEN: D of boron at 1150°C = 7.2 ×10-13 cm2 / sec]

Calculate the final junction depth. Show all calculations.
[Hint: You have to use the Irvin Curves]

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Problem 4 Implantation followed by drive-in diffusion

We would like to form an n-type region on a p-type Si substrate (p-type concentration is 1016/cm3), with
phosphorus implantation followed by a drive-in step (e.g. the N-well of a CMOS process).

The phosphorus implantation is done with a 0.1 µm of SiO2 present over Si substrate.

(a) What implant energy should be chosen such that one half of the implant dose ends up in the Si?
Assume SiO2 has the same implantation stopping power of Si.
(b) If the phosphorus concentration at the Si surface is 1018 /cm3, what is SiO Si
the required implant dose? 2
(c) The phosphorus implantation profile in Si is mathematically
equivalent to a drive-in profile with an effective Dt which can be used in
subsequent drive-in calculations. What is the value of this effective Dt? ∆ Rp

x=0
(d) What is the junction depth xj after implantation but before the drive-in step?
(e) What drive-in time is required to achieve a junction depth of 2 µm at 1200°C. Given: D (phosphorus
at 1200°C) = 0.5 µm2 / hour. [Hint: Phosphorus diffusion is SiO2 is negligible. The phosphorus implant
inside SiO2 does not affect the phosphorus diffusion in Si.]
(f) Calculate sheet resistance of the phosphorus-doped n-layer after the drive-in step described in part(e) ?
(g) Is high concentration diffusion effects significant in this diffusion problem? Explain.
(h) To obtain the same phosphorus dose in Si [ see part (b) ], it is proposed that the phosphorus
implantation step is replaced by a predeposition diffusion step at 950°C (D for phosphorous ≈10-15cm2/sec
at 950°C) performed directly on a blanket p-Si substrate (no oxide). Do you think the required predep
time is controllable using a diffusion furnace?

Problem 5 High Concentration Diffusion effects

(a) In class, we illustrated how a boron diffusion profile will generate a built-in electric field which can
enhance the boron diffusion constant. Repeat the same argument here for the case of arsenic diffusion.

(b) With high concentration diffusion effects, the diffusion profile resembles a rectangular profile (i.e.,
constant concentration from surface to the junction depth). Analogous to the Irvin’s Curves, plot log CS
versus log (RS xj) for this rectangular profile. What is the numerical value of the slope of this plot ?

(c) The surface region of a Si wafer contains two identical

concentration depth profiles of Boron and Arsenic. Both profiles can C(x)
be considered as having high concentration (~1020/cm3 near the peak As
region)
(i) Do you expect to observe high concentration diffusion effects B
when the wafer is heated at 1000°C for short diffusion times? Explain
with a sketch.
(ii) Do you expect to observe high concentration diffusion effects
n = p = ni
when the wafer is heated at 1000°C for longer diffusion times? Explain
with a sketch. x
[Hint: Boron has a higher diffusivity than Arsenic]

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Problem 6 Why difficult to form ultra-shallow junctions

To form the source/drain regions of a MOSFET by ion implantation followed by an annealing step, it is
desirable to have :

(1) very shallow junction depths xj ;

AND
(2) very low sheet resistance RS.

(i) Discuss how ion channeling, high concentration diffusion effects, and transient enhanced
diffusion will limit the formation of ultra-shallow junction depths.
(ii) Discuss the key physical mechanism which limits the formation of low sheet resistance
source/drain layers of a MOSFET when junction depth is very shallow.

(iii) Discuss the difficulty to satisfy BOTH the shallow junction depths xj AND low sheet resistance
RS requirements.