FCP16N60 / FCPF16N60 600V N-Channel MOSFET

January 2007

SuperFETTM
FCP16N60 / FCPF16N60
600V N-Channel MOSFET

Features Description
• 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
• Typ. Rds(on)=0.22:
balance mechanism for outstanding low on-resistance and
• Ultra low gate charge (typ. Qg=45nC) lower gate charge performance. 
This advanced technology has been tailored to minimize
• Low effective output capacitance (typ. Coss.eff=110pF)
conduction loss, provide superior switching performance, and
• 100% avalanche tested withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.

G
TO-220 GD S
TO-220F
G DS
FCP Series FCPF Series
S

Absolute Maximum Ratings

Symbol Parameter FCP16N60 FCPF16N60 Unit
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25qC) 16 16* A
- Continuous (TC = 100qC) 10.1 10.1* A
IDM Drain Current - Pulsed (Note 1)
48 48* A

VGSS Gate-Source voltage r 30 V

EAS Single Pulsed Avalanche Energy (Note 2) tbd mJ
IAR Avalanche Current (Note 1) 16 A
EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25qC) 167 37.9 W
- Derate above 25qC 1.33 0.3 W/qC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 qC
TL Maximum Lead Temperature for Soldering Purpose,
300 qC
1/8” from Case for 5 Seconds

*Drain current limited by maximum junction temperature


Thermal Characteristics
Symbol Parameter FCP16N60 FCPF16N60 Unit
RTJC Thermal Resistance, Junction-to-Case 0.75 3.3 qC/W
RTJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 qC/W

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCP16N60 / FCPF16N60 Rev. A
 FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCP16N60 FCP16N60 TO-220 - - 50
FCPF16N60 FCPF16N60 TO-220F - - 50

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250PA, TJ = 25qC 600 -- -- V
VGS = 0V, ID = 250PA, TJ = 150qC -- 650 -- V
'BVDSS Breakdown Voltage Temperature
ID = 250PA, Referenced to 25qC -- 0.6 -- V/qC
/ 'TJ Coefficient
BVDS Drain-Source Avalanche Breakdown VGS = 0V, ID = 16A
-- 700 -- V
Voltage
IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V -- -- 1 PA
VDS = 480V, TC = 125qC -- -- 10 PA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250PA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10V, ID = 8A -- 0.22 0.26 :
On-Resistance
gFS Forward Transconductance VDS = 40V, ID = 8A (Note 4) -- 11.5 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, -- 1610 2100 pF
f = 1.0MHz
Coss Output Capacitance -- 870 1135 pF
Crss Reverse Transfer Capacitance -- 65 -- pF
Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 45 58 pF
Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 110 -- pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300V, ID = 16A -- 42 90 ns
RG = 25:
tr Turn-On Rise Time -- 95 200 ns
td(off) Turn-Off Delay Time -- 150 320 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 45 95 ns
Qg Total Gate Charge VDS = 480V, ID = 16A -- 50 66 nC
VGS = 10V
Qgs Gate-Source Charge -- 9.2 12 nC
Qgd Gate-Drain Charge (Note 4, 5) -- 25 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 16 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS =16A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 16A -- 450 -- ns
dIF/dt =100A/Ps (Note 4)
Qrr Reverse Recovery Charge -- 8.2 -- PC

NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 8A, VDD = 50V, RG = 25:, Starting TJ = 25qC
3. ISD d 16A, di/dt d 200A/Ps, VDD d BVDSS, Starting TJ = 25qC
4. Pulse Test: Pulse width d 300Ps, Duty Cycle d 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

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FCP16N60 / FCPF16N60 Rev. A
 FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2
10
VGS
2
Top : 15.0 V 10
10.0 V
8.0 V
7.0 V

ID , Drain Current [A]

6.5 V
ID, Drain Current [A]

6.0 V
1
10 Bottom : 5.5 V 150ŀ
1
10

25ŀ
-55ŀ
0 0
10 10
ĝ Notes : ĝ Note
1. 250ɴs Pulse Test 1. VDS = 40V
2. TC = 25ŀ 2. 250ɴs Pulse Test

-1 0 1 2 4 6 8 10
10 10 10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
2
0.4 10
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance

0.3
VGS = 10V
RDS(ON) [ɠ ],

1
10

0.2

VGS = 20V
150ŀ 25ŀ
0
0.1 10
ĝ Notes :
1. VGS = 0V
ĝ Note : TJ = 25ŀ 2. 250ɴs Pulse Test

0.0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000 12
Ciss = Cgs + Cgd (Cds = shorted)
9000 Coss = Cds + Cgd VDS = 100V
Crss = Cgd
10 VDS = 250V
VGS, Gate-Source Voltage [V]

8000
VDS = 400V
7000
8
Capacitance [pF]

6000 Coss

5000 6
ĝ Notes :
4000 1. VGS = 0 V
Ciss
2. f = 1 MHz
4
3000

2000
Crss 2
1000 ĝ Note : ID = 20A

0 0
-1 0 1
10 10 10 0 10 20 30 40 50 60 70 80

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

3 www.fairchildsemi.com
FCP16N60 / FCPF16N60 Rev. A
 FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.5

RDS(ON), (Normalized)
BVDSS, (Normalized)

1.1
2.0

1.0 1.5

1.0
? Notes :
0.9 1. VGS = 0 V
ĝ Notes :
2. ID = 250 ? A
0.5 1. VGS = 10 V
2. ID = 20 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
o

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FCP20N60 for FCPF20N60

Operation in This Area Operation in This Area

10
2 is Limited by R DS(on) 10
2 is Limited by R DS(on)

100 us 100 us
ID, Drain Current [A]

ID, Drain Current [A]

10
1 1 ms 10
1
1 ms
10 ms 10 ms
DC 100 ms
0 0
10 10 DC

ĝ Notes : ĝ Notes :
-1 o -1 o
10 1. TC = 25 C 10 1. TC = 25 C
o o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse

-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10

VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 10. Maximum Drain Current

vs. Case Temperature

25

20
ID, Drain Current [A]

15

10

0
25 50 75 100 125 150
o
TC, Case Temperature [ C]

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FCP16N60 / FCPF16N60 Rev. A
 FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FCP20N60

0
10

D = 0 .5
Zɰ JC(t), Thermal Response

0 .2 ĝ N o te s :
-1 1 . Z ɰ JC(t) = 0 .6 ŀ /W M a x.
10
2 . D u ty F a c to r, D = t 1 /t 2
0 .1 3 . T JM - T C = P D M * Z ɰ JC(t)

0 .0 5

0 .0 2 PDM
0 .0 1
t1
-2
10 s in g le pu ls e t2

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FCPF20N60

D = 0 .5
0
10
Zɰ JC(t), Thermal Response

0 .2

0 .1 ĝ N o te s :
1 . Z ɰ J C( t) = 3 .2 ŀ /W M a x .
0 .0 5 2 . D u ty F a c to r , D = t 1 /t 2
-1 3 . T J M - T C = P D M * Z ɰ J C( t)
10
0 .0 2
0 .0 1

PDM
s in g le p u ls e
-2
t1
10 t2

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

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FCP16N60 / FCPF16N60 Rev. A
 FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

VGS
SameType
50Kൎ
asDUT Qg
12V 200nF
300nF 10V
VDS
VGS Q Q
gs gd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

R
L V
DS
V
DS 9
0%

V V
DD
GS
R
G

1
0%
V
GS
1
0V D
UT
t
d(o
n) t
r t
d(o
ff) t
f
to
n
to
ff

Unclamped Inductive Switching Test Circuit & Waveforms

L B V DS S
1
--
--L 2-
-------------------
V E
AS= IA
S
DS 2 B V DS S -V DD

B
VDSS
ID
IA
S

R
G
V
DD ID(t)

1
0V D
UT V
DD V
DS(t)
tp
tp T
ime

6 www.fairchildsemi.com
FCP16N60 / FCPF16N60 Rev. A
 FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

V DS

I SD
L

D r iv e r
R G
S am e T ype
as DUT V DD

V G S • d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d

G a t e P u ls e W id t h
V GS D = --------------------------
G a te P u ls e P e r io d 10V
( D r iv e r )

I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT ) d i/ d t

IR M

B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT ) B o d y D io d e R e c o v e r y d v / d t

V SD
V DD

B o d y D io d e
F o r w a r d V o lt a g e D r o p

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FCP16N60 / FCPF16N60 Rev. A
 FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Mechanical Dimensions

TO-220
9.90 ±0.20 4.50 ±0.20
1.30 ±0.10

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

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FCP16N60 / FCPF16N60 Rev. A
 FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Mechanical Dimensions (Continued)

TO-220F
3.30 ±0.10

10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20

(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3
0°
)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20

Dimensions in Millimeters

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FCP16N60 / FCPF16N60 Rev. A
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I22