Semiconductor AN721: Motorola Application Note
Semiconductor AN721: Motorola Application Note
Semiconductor AN721: Motorola Application Note
MOTOROLA by AN721/D
SEMICONDUCTOR
APPLICATION NOTE
AN721
1. INTRODUCTION LS RBB′
RF Application
Motorola, Inc. 1993 Reports 1
AN721
defined as a small signal parameter, where: The different reactance values will be calculated and
ωT = transit angular frequency determined graphically. Increasing the number of reactances
CTC + CDC = transition and diffusion capacitances broadens the bandwidth. However, networks consisting of
at the collector junction more than four reactances are rare. Above four reactances,
The output capacitance C OUT, which is a large signal the improvement is small.
parameter, is related to the small signal parameter CCB, the
4.1 NUMERICAL DESIGN
collector-base transition capacitance.
Since a junction capacitance varies with the applied 4.1.1 Two-Resistance Networks
voltage, C OUT differs from C CB in that it has to be averaged
over the total voltage swing. For an abrupt junction and Resistance terminations will first be considered. Figure 4
assuming certain simplifications, C OUT = 2 C CB. shows the reactive L-section and the terminations to be
Figure 3 shows the variation of C OUT with frequency. matched.
C OUT decreases partly due to the presence of the collector
X2
lead inductance, but mainly because of the fact that the
base-emitter diode does not shut off anymore when the
operating frequency approaches the transit frequency fT. R
R1 X1 R2 = 1
n
COUT n>1
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If X1 is capacitive and consequently X2 inductive, then:
fo R2 fo 1 R2 Xint Xext Xext = X2 – Xint
X1 = – R1 =– R1
f R1 – R 2 f n–1
f f n–1
and X2 = R2 (R1 – R2) = R1
fo fo 1
X1 ⋅ Xint
The normalized current absolute value is equal to: R1 Xint Xext Xext =
Xin - X1
I2 2 n
=
Io f 4 f 2
(n – 1)2 ⋅ ǒ Ǔ – 2 ǒ Ǔ + (n + 1)2
fo fo Figure 6. Termination Reactance Compensation
RF Application Reports 3
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POUT rel.
1.0
.9
.8
(b)
.7
.6
.5
.4
(a)
.3
.2
.1
f/fo
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RG L RG Z(Θ)
C RL RL
(a) (b)
TRANSFORMATION RATIO n = 10
(c)
XL XC2 Network (c):
XL1 = Q ⋅ R1 Q must be first selected
R2 > R1
R1 XC1 R2 R1 (1 + Q2)
XC2 = A ⋅ R2 A= –1
R2
B
XC1 = B = R1 ⋅ (1 + Q2)
Figure 9. Three-Reactance Matching Networks Q–A
The network which yields the most practical component
values, should be selected for a given application.
The three-reactance networks can be thought of as being
formed of a L-section (two reactances) and of a
compensation reactance. The L-section essentially performs
the impedance transformation, while the additional reactance
compensates for the reactive part of the transformed
impedance over a certain frequency band.
Figure 10 shows a representation in the Z-plane of the
circuit of Figure 9 (a) split into two parts R1 – C1 – L1 and
C2 – R2.
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L1 Again, if one of the terminations has a reactive
component, the latter can be taken as a part of the matching
network, provided it is not too large (see Fig. 6).
R1 C1 C2 R2
L2 C1
Z′ Z″
R1 2
R1 C1 R2(G2) C2 R1(G1)
Z′ = + jω L1 – = R′ + jX′
1 + ω2 R12 C12 1 + ω2 R12 C12
R2 jω2 C2 R22 Y″ Y′
Z″ = – = R″ + jX″
1 + ω C2 R2
2 2 2 1 + ω2 C22 R22
ω2C12R1 jωC1
Y′ = G′ + jB′ = –
1 + ω2 C12 R12 1 + ω2 C12 R12
L1 R′ R1
x′ =ǒ – Ǔ –1 R2 jωL2
C1 R12 R1 R′ Y″ = G″ + jB″ = + jωC2 –
R2 + ω2L22
2 R22 + ω2L22
x′, – x″
x″ = R′ R2 – R′2
B′ = – G′/R′1 – G′2 B″ = (1/kR2 – G″) 1/G″R2 – 1
x′
ω k =L2/C2R22
–x″ M
ω M′ B′
(f1)
N′ ω B″
R′ M
R2 R1 G′ or G″
G1 G2
ω
Figure 10. Z-Plane Representation of the Circuit of
Figure 9(a)
B′ .– B″
Exact transformation from R1 into R2 occurs at the points Figure 11. Y-Plane Representation of the Circuit
of intersection M and N. Impedances are then conjugate or of Figure 9(c)
Z′ = R′ + jX′ and Z″ = R″ + jX″ with R′ = R″ and X′ = – X″.
The only possible solution is obtained when X′ and – X″ 4.1.3 Four-reactance networks
are tangential to each other. For the dashed curve, Four-reactance networks are used essentially for
representing another value of L1 or C1, a wider frequency broadband matching. The networks which will be considered
band could be expected at the expense of some ripple inside in the following consist of two two-reactance sections in
the band. However, this can only be reached with four cascade. Some networks have pseudo low-pass filter
reactances as will be shown in section 4.1.3. character, others band-pass filter character. In principle, the
With a three-reactance configuration, there are not former show narrower bandwidth since they extend the
enough degrees of freedom to permit X′ = – X″ and impedance transformation to very low frequencies unneces-
simultaneously obtain the same variation of frequency on sarily, while the latter insure good matching over a wide
both curves from M′ to point N′. frequency band around the center frequency only (see
Exact transformation can, therefore, only be obtained at Fig. 14).
one frequency.
The values of the three reactances can be calculated by a) X2 M X3 b) X2 M X4
making
dX′ dX″ X1 X4 X1 X3
X′ = – X″, R′ = R″ and =– . R1 R2 R1 R2
dR′ dR″
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Impedance transformation is obtained with one series in Figure 14. Figure 15 shows the selectivity for networks
reactance and one shunt reactance. Compensation is made (a) and (b) when the source resistance R1 is infinite.
with both reactances in series or in shunt. From Figure 15 it can be seen that network (a) is more
If two cascaded transformation networks are used, sensitive to R1 changes than network (b).
transformation is accomplished partly by each one.
With four-reactance networks there are two frequencies,
f1 and f2, at which the transformation from R1 into R2 is exact. 0 + j1
These frequencies may also coincide.
For network (b) for instance, at point M, R1 or R2 is
transformed into √R1R2 when both frequencies fall together. Q2
0.28 + j0.45 NORMALIZED IMP.
At all points (M), Z1 and Z2 are conjugate if the transformation 0.1 + j0.16 (1 – j1.6) NORMALIZED ADM.
Q1
is exact. (2.8 – j4.5)
(a)
In the case of Figure 12 (b) the reactances are easily, b′3 b1
calculated for equal frequencies: 0.1 + j0.147
Q′1 (0.316 b3
– j4.65) 0.316 – j0
∞
x4
x’4
1 + j0
R1 n–1
X1 = , X2 = R1 0 0.1
x2
n
n–1 x′2 b′1
X1 ⋅ X4 = R1 ⋅ R2 = X2 ⋅ X3 0.28 – j0.14
(2.8 + j1.4) (b)
R1 R1 0.316 – j0.465
X3 = , X4 = n–1 Q′2
(1 + j1.47)
n
n( n – 1)
R1 = 1
For network (a) normally, at point (M), Z1 and Z2 are
R2 = 0.1
complex. This pseudo low-pass filter has been computed
elsewhere (Ref. (3)). Many tables can be found in the
(a) X1 = 0.624 X3 = 0.169 X′1 = 0.68 X′3 = 0.215
literature for networks of four and more reactances having ( ( ( (
Tchebyscheff character or maximally-flat response (Ref. (3), B1 = 1.6 B3 = 5.9 B′1 = 1.47 B′3 = 4.65
(4) and (6)). X2 = 0.59 X4 = 0.160 X′2 = 0.465 X′4 = 0.147
Figure 13 shows the transformation path from R1 to R2
for networks (a) and (b) on a Smith-Chart (refer also to Q1 = 1.6 = Q2 Q′1 = Q′2 = 1.47
section 4.2, Graphic Design).
(a) X2 X4 (b) X′2 X′4
Case (a) has been calculated using tables mentioned in
Ref. (4).
Case (b) has been obtained from the relationship given R1 X1 X3 R2 R1 X′1 X′3 R2
above for X1 . . . X4. Both apply to a transformation ratio
equal to 10 and for R1 = 1.
There is no simple relationship for X′1 . . . X′4 of network
(b) if f1 is made different from f2 for larger bandwidth.
Figure 13. Transformation Paths for Networks
Figure 14 shows the respective bandwidths of network
(a) and (b)
(a) and (b) for the circuits shown in Figure 13.
If the terminations contain a reactive component, the
computed values for X1 or X 4 may be adjusted to
ATTEN.
compensate for this.
–0
For configuration (a), it can be seen from Figure 13, that –1
(a)
in the considered case the Q’s are equal to 1.6. –2
For configuration (b) Q′1, which is equal to Q′2, is fixed –3
(b)
for each transformation ratio. –4
–5
(b)
n 2 4 8 10 16 –6 (a)
Q′ = n–1
Q′1 = Q′2 0.65 1 1.35 1.46 1.73 –7
–8
–9
The maximum value of reactance that the terminations
–10 f/fo
may have for use in this configuration can be determined
from the above values of Q′. .3 .4 .5 .6 .7 .8 .9 1 1.1 1.3 1.5 1.7 1.9
If R1 is the load resistance of a transistor, the internal
transistor resistance may not be equal to R1. In this case Figure 14. Selectivity Curves for Networks (a) and (b)
the selectivity curve will be different from the curves given of Figure 13
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REL. ATTEN. L2 L1 C1
2
1 R2 C2 R2
0 (G2) (G1)
–1
–2
–3 Y″ Y′
–4
R1 j(ωL1 – 1/ωc1)
–5 (a) (b) (a) (b) Y′ = G′ + jB′ = –
–6 R12 + (ωL1 – 1/ωc1)2 R12 + (ωL1 – 1/ωc1)2
–7
–8 R2 L2
Y″ = G″ + jB″ = + jω ǒC2 – Ǔ
–9 R22 + ω2L22 R22 + ω2L22
–10 f/fo
.4 .5 .6 .7 .8 .9 1 1.1 1.3 1.5 1.7 G′
B′ = ± – G′2
R1
1 L2
Figure 15. Selectivity curves for networks (a) and (b) B″ = (1/kR2 – G″) –1 k =
G″R2 C2 R22
of Figure 13 with Infinite R1
B′
As mentioned earlier, the four-reactance network can also G1 G2
be thought of as two cascaded two-reactance sections; one G
M′
used for transformation, the other for compensation. ω B″
N′
Figure 16 shows commonly used compensation networks, M
together with the associated L-section.
ω
The circuit of Figure 16 (a) can be compared to the
three-reactance network shown in Figure 9(c). The difference
is that capacitor C2 of that circuit has been replaced by a
L-C circuit. The resulting improvement may be seen by
comparing Figure 17 with Figure 11. B
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bandwidth change is not significant as long as short portions 1.0
of lines are used (Ref. (13)). n=4
0.9
4.1.4 Matching networks using quarter-wave
transformers 0.8
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1 Thus, devices having relatively high input Q’s are usable
ln
Γ for broadband operation, provided the consequent higher
attenuation or reflection introduced is acceptable.
The general shape of the average insertion losses or
π attenuation a (neglecting the ripple) of a low-pass impedance
S=
RC matching network is represented in Figure 24 as a function
of 1/Q for different numbers of network elements n (ref. (3)).
ωc ω For a given Q and given ripple, the attenuation decreases
if the number n of the network element increases. But above
Figure 22. Representation of Bode Equation n = 4, the improvement is small.
For a given attenuation a and bandwidth, the larger n the
The meaning of Bode equation is that the area S under the smaller the ripple.
curve cannot be greater than π/RC and therefore, if matching For a given attenuation and ripple, the larger n the larger
is required over a certain bandwidth, this can only be done at the bandwidth.
the expense of less power transfer within the band. Thus, Computations show that for Q < 1 and n ≤ 3 the
power transfer and bandwidth appear as interchangeable attenuation is below 0.1 db approximately. The impedance
quantities. transformation ratio is not free here. The network is a true
It is evident that the best utilization of the area S is low-pass filter. For a given load, the optimum generator
obtained when Γ is kept constant over the desired band impedance will result from the computation.
ωc and made equal to 1 over the rest of the spectrum. Then Before impedance transformation is introduced, a
conversion of the low-pass prototype into a band-pass filter
π
– type network must be made. Figure 25 summarizes the main
Γ = e ωc RC
relations for this conversion.
within the band and no power transfer happens outside. r is the conversion factor.
A network fulfilling this requirement cannot be obtained For the band-pass filter, QlN max or the maximum possible
in practice as an infinite number of reactive elements would input Q of a device to be matched, has been increased by
be necessary. the factor r (from Figure 25, Q′IN max = r ⋅ QIN max).
If the attenuation a is plotted versus the frequency for Impedance inverters will be used for impedance
practical cases, one may expect to have curves like the ones transformation. These networks are suitable for insertion into
shown in Figure 23 for a low-pass filter having Tchebyscheff a band-pass filter without affecting the transmission
character. characteristics.
2 a a
a 1
LOW-PASS BAND-PASS
a max2
a min2
a max1
ωa ωo ωb
a min1 ∆ω
wc =
ω 2 ∆ω
ω1 ω2 ωo
r=
∆ω
Figure 23. Attenuation versus Angular Frequency for C1′
Different Bandwidths with Same Load
L1 L3 L1′
R5 R5
For a given complex load, an extension of the bandwidth Ro C2 C4 Ro C ′
from ω1 to ω2 is possible only with a simultaneous increase 2 L2′
of the attenuation a. This is especially noticeable for Q’s
exceeding one or two (see Figure 24).
ωcL1 1
QIN max = L1′ = r.L1 C1′ =
dB Ro ωo2 L1′
4 ωoL1′ 1
QIN max = C2′ = r.C2 L2′ =
3 Ro ωo2 C2′
n=2 etc.
a 2
3
Figure 25. Conversion from Low-Pass into
1 ∞ Band-Pass Filter
0
0.1 1 1/Q Figure 26 shows four impedance inverters. It will be
noticed that one of the reactances is negative and must be
Figure 24. Insertion Losses as a Function of 1/Q combined in the band-pass network with a reactance of at
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least equal positive value. Insertion of the inverter can be (4) Convert the element values found by step (3) into
made at any convenient place (Ref. (3) and (9)). series or parallel resonant circuit parameters,
(5) Insert the impedance inverter in any convenient
INVERTER EQUIVALENT TO: place.
C C In the above discussions, the gain roll-off has not been
1 – 1/n 1/n2 – 1/n taken into account. This is of normal use for moderate
bandwidths (30% for ex.). However, several methods can
be employed to obtain a constant gain within the band
a) nC C despite the intrinsic gain decrease of a transistor with
frequency.
Tables have been computed elsewhere (Ref. (10)) for
n:1
matching networks approximating 6 db/octave attenuation
nC C
versus frequency.
Another method consists in using the above mentioned
b) (1 – n)C (n2 – n)C network and then to add a compensation circuit as shown
for example in Figure 27.
L2 C2
n:1
L(1 – 1/n) L(1/n2 – 1/n)
R = ZIN = CONSTANT vs. f.
R1
L1C1 = L2C2
c)
L/n L R R1 = R
L1 C1 ωb2 = 1/L1C1 = 1/L2C2
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Z0 = Rg/2
Rg
Rg
RL =
4
Figure 28. 4:1 Line Transformer Line Transformer on P.C. Board (Figure 29)
35 µ
The low frequency cut-off is determined first by the length Cu 66 µ
of line, long lines extending the low frequency performance Ribbon thickness
Electrical tape
of the transformer. Low frequency cut-off is also improved
EE3990
by a high even mode impedance, which can be achieved Permacel New Brunswick
by the use of ferrite material. With matched ends, no power
ISOLATION
is coupled through the ferrite which cannot saturate. Cu
ISOLATION
For matched impedances, the high frequency attenuation
a of the 4:1 transformer is given by:
ÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉ 15 22
in mm
ÉÉÉÉÉÉÉ
Cu
10
61.5
68.5
Line Transformer on Ferrite (Figure 30)
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
STICK ONE AGAINST THE OTHER
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
4.2 GRAPHIC DESIGN
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
The common method of graphic design makes use of the
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
Impedance-Admittance Chart (Smith Chart).
It is applicable to all ladder-type networks as encountered
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
in matching circuits.
ÉÉ É
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
Matching is supposed to be realized by the successive
algebraic addition of reactances (or susceptances) to a given
ÉÉ É ÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ start impedance (or admittance) until another end impedance
ÉÉ ÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
(or admittance) is reached.
Impedance chart and admittance chart can be super-
imposed and used alternatively due to the fact that an
immittance point, defined by its reflection coefficient Γ with
respect to a reference, is common to the Z-chart and the
Figure 29. 4:1 Line Transformer on P.C. Board Y-chart, both being representations in the Γ-plane.
RF Application Reports 11
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Z – Rs γi
Γ= γr + jγ i +1
Z + Rs b = – 0.5
g = 0.5 INDUCTIVE
Gs – Y
Γ= b<0
Gs + Y g=1
b = –1 γr
b=0
1
Rs = = Characteristic impedance of the line –1 +1
Gs SHORT b=1
OPEN
More precisely, the Z-chart is a plot in the Γ-plane, while CAPACITIVE
the Y-chart is a plot in the – Γ-plane. The change from the g=0 b>0
Γ to – Γ-plane is accounted for in the construction rules given –1 b = 0.5
below. g>0
Figure 31 and 32 show the representation of normalized – Γ-PLANE
Z and Y respectively, in the Γ-plane.
The Z-chart is used for the algebraic addition of series Y
= y = g + jb
reactances. The Y-chart is used for the algebraic addition Gs
of shunt reactances. 1 – γr2 – γ i2
g=
For the practical use of the charts, it is convenient to make
(1 + γr)2 + γ i2
the design on transparent paper and then place it on a usual INDUCTIVE
Smith-chart of impedance type (for example). For the – 2γ i
b= g
addition of a series reactor, the chart will be placed with (1 + γr)2 + γ i2
“short” to the left. For the addition of a shunt reactor, it will 1 – g2 – b2 CAPACITIVE
be rotated by 180° with “short” (always in terms of γr =
impedance) to the right. (1 + g)2 + b2
– 2b b
γi γi =
+1 (1 + g)2 + b2 RECTANGULAR COORDINATES
x = 0.5
Figure 31. Representation of the Normalized Z Values in Secondly, one must choose the operating Q of the circuit,
the Γ-Plane which is also related to the bandwidth. Q can be defined at
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each circuit node as the ratio of the reactive part to the real [Vcc – Vce (sat)]2 (28 – 3)2
part of the impedance at that node. The Q of the circuit, which or = 15.6 ohms .
2 x Pout 40
is normally referred to, is the highest value found along the
path.
The collector capacitance given by the data sheet is
Constant Q curves can be superimposed to the charts
40 pF, corresponding to a capacitive reactance of 22.7 ohms.
and used in conjunction with them. In the Γ-plane Q-curves
The output impedance seen by the collector to insure the
are circles with a radius equal to
required output power and cancel out the collector
1 capacitance must be equal to a resistance of 15.6 ohms in
1+ parallel with an inductance of 22.7 ohms. This is equivalent
Q2
to a resistance of 10.6 ohms in series with an inductance
of 7.3 ohms.
and a center at the point ± 1/Q on the imaginary axis, which
The input Q is equal to, 1.1/1.94 or 0.57 while the output
ǒ Ǔ
is expressed by:
Q is 7.3/10.6 or 0.69.
x 2γ i 1 2 1 It is seen that around this frequency, the device has good
Q= = γ r2 + γ i + =1+ .
r 1 – γ r2 – γ i2 Q Q2 broadband capabilities. Nevertheless, the matching circuit
will be designed here for a narrow band application and the
The use of the charts will be illustrated with the help of effective Q will be determined by the circuit itself not by the
an example. device.
The following series shunt conversion rules also apply: Figure 34 shows the normalized impedances (to
50 ohms).
X 0.022 0.146
R ≅ R′ X′
0.039 0.212
R′ 1 R
R= G′ = =
R′2 R′ R2 + X2
1+ NORMALIZED INPUT IMPEDANCE LOAD IMPEDANCE
X′2
Figure 34. Normalized Input and Output Impedances for
X′ 1 X the 2N5642
X= – B′ = =
X′2 X′ R2 + X2
1+ Figure 35 shows the diagram used for the graphic design
R′2
of the input matching circuit. The circuit Q must be larger
Figure 33 shows the schematic of an amplifier using the than about 5 in this case and has been chosen equal to 10.
2N5642 RF power transistor. Matching has to be achieved At Q = 5, C1 would be infinite. The addition of a finite value
at 175 MHz, on a narrow band basis. of C1 increases the circuit Q and therefore the selectivity.
The normalized values between brackets in the Figure are
VCC = 28 V admittances (g + jb).
0 + j1
RFC
L4 PARALLEL CAPACITANCE C2
Q– (b2)
C1 L3 0.039 + j0.39
CIRCLE (0.25 – j2.5) 1 + j1.75
(10)
(0.25 – j0.42)
RFC SERIES
50 Ω 50 Ω INDUCTANCE L3 SERIES
C2 C0 C5
(x3) CAPACITANCE C1
(x1)
0 0.039 + j0.022 1 + j0 ∞
2N5642
Figure 35. Input Circuit Design
Figure 33. Narrow-Band VHF Power Amplifier
At f = 175 MHz, the following results are obtained:
ωL3 = 50x3 = 50 (0.39 – 0.022) = 18.5 ohms
The rated output power for the device in question is 20 W
at 175 MHz and 28 V collector supply. The input impedance N
L3 = 16.8 nH
at these conditions is equal to 2.6 ohms in parallel with – 1 1
ωC2 = b2 = (2.5 – 0.42) = 0.0416 mhos
200 pF (see data sheet). This converts to a resistance of 50 50
1.94 ohms in series with a reactance of 1.1 ohm.
The collector load must be equal to: N C2 = 37.8 pF
RF Application Reports 13
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0.212 + j0.146
5.2 CIRCUIT SCHEMATIC
1 + j0
0 ∞ 12.5 V
C7
SERIES INDUCTANCE L4
(x4) PARALLEL CAPACITANCE C5
0.212 – j0.4 (b5)
(1 + j1.9) RFC2
C6
Figure 36. Output Circuit Design
1 1 L2
ωC5 = b5 = ⋅ 1.9 = 0.038 mhos
50 50
N C5 = 34.5 pF T1 C1
C4 T2
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% Acknowledgments:
PIN = 2 W The author is indebted to Mr. T. O’Neal for the fruitful
70
discussions held with him. Mr. O’Neal designed the circuit
60 shown in Figure 37; Mr. J. Hennet constructed and tested
1W
the lab model.
50
η 40 0.5 W 6. LITERATURE
30 1. Motorola Application Note AN-282A “Systemizing RF
20 Power Amplifier Design”
2. W. E. Everitt and G. E. Anner “Communication Engi-
10
neering” McGraw-Hill Book Company, Inc.
MHz 3. G. L. Matthaei, L. Young, E. M. T. Jones “Microwave
118 124 128 132 136
Filters, Impedance-Matching Networks and Coupling
f
Structures” McGraw-Hill Book Company, Inc.
Figure 39. η vs Frequency 4. G. L. Matthaei “Tables of Chebyshew Impedance-
Transforming Networks of Low-Pass Filter Form” Proc.
db.
IEEE, August 1964
0
5. Motorola Application Note AN-267 “Matching Network
Prefl.
Designs with Computer Solutions”
Pin – 5 PIN = 2 W 6. E. G. Cristal “Tables of Maximally Flat Impedance-
– 10
Transforming Networks of Low-Pass-Filter Form” IEEE
Transactions on Microwave Theory and Techniques
1W
– 15 Vol. MTT 13, No 5, September 1965 Correspondence
0.5 W 7. H. W. Bode “Network Analysis and Feedback Amplifier
– 20 Design” D. Van Nostrand Co., N.Y.
8. R. M. Fano “Theoretical Limitations on the Broadband
MHz Matching of Arbitrary Impedances” Journal of Franklin
118 124 128 132 136 Institute, January – February 1950
f 9. J. H. Horwitz “Design Wideband UHF-Power Amplifi-
Figure 40. PREFL./PIN vs Frequency ers” Electronic Design 11, May 24, 1969
10. O. Pitzalis, R. A. Gilson “Tables of Impedance Matching
Networks which Approximate Prescribed Attenuation
Versus Frequency Slopes” IEEE Transactions on Mi-
crowave Theory and Techniques Vol. MTT-19, No 4,
April 1971
11. C. L. Ruthroff “Some Broadband Transformers” Proc.
IRE, August 1959
12. H. H. Meinke “Theorie der H. F. Schaltungen” München,
Oldenburg 1951
RF Application Reports 15
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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
16 AN721/D
RF Application Reports
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