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Darlington: Silicon NPN Triple Diffused Planar Transistor (Complement To Type 2SB1687)

The document provides specifications for a 2SD2643 silicon NPN triple diffused planar transistor. It lists the absolute maximum ratings and electrical characteristics, including breakdown voltage, current gain, and saturation voltage. The transistor is intended for audio and series regulator applications and has a TO3PF external package dimensions.
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0% found this document useful (0 votes)
67 views1 page

Darlington: Silicon NPN Triple Diffused Planar Transistor (Complement To Type 2SB1687)

The document provides specifications for a 2SD2643 silicon NPN triple diffused planar transistor. It lists the absolute maximum ratings and electrical characteristics, including breakdown voltage, current gain, and saturation voltage. The transistor is intended for audio and series regulator applications and has a TO3PF external package dimensions.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Equivalent circuit C

2SD2643
B

Darlington (7 0Ω )
E

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit

0.8±0.2
15.6±0.2 5.5±0.2
VCBO 110 V ICBO VCB=110V 100max µA 3.45 ±0.2

VCEO IEBO µA

5.5
110 V VEB=5V 100max

9.5±0.2
VEBO 5 V V(BR)CEO IC=30mA 110min V

23.0±0.3
IC 6 A hFE VCE=4V, IC=5A 5000min∗ a
ø3.3±0.2

1.6
IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max V b

3.0
PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V

3.3
Tj 150 °C fT VCE=12V, IE=–0.5A 60typ MHz 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF
1.05 +0.2
-0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 5.45±0.1 0.65 +0.2
-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
30 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)


A

(V CE =4V)
1m

Collector-Emitter Saturation Voltage V C E (sa t) (V )

6 3 6
A 0. 4m A
5mA

5m
0.

0.3 mA

Collector Current I C (A)


Collector Current I C (A)

p)
em
4 2 4

eT
as
(C
0.2mA

5˚C

)
Temp
12

)
I C =5A

Temp
(Case

(Case
2 1 2
I C =3A

25˚C

–30˚C
I B =0.1mA

0 0 0
0 2 4 6 0.1 0.5 1 5 10 50 100 0 1 2 2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics


θ j - a (˚C /W)

(V C E =4V) (V C E =4V)
50000 50000 5

125˚C
DC Curr ent Gain h FE
D C Cur r ent Gai n h F E

Typ
Transient Thermal Resistance

10000 10000
5000 5000 25˚C

–30˚C
1000 1000 1
500 500

0.5
100 100
0.01 0.1 0.5 1 56 0.01 0.1 0.5 1 56 1 5 10 50 100 500 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating


(V C E =12V)
80 20 60

Typ
10
Maxim um Power Dissip ation P C (W)
10

5
Cut- off F req uenc y f T (M H Z )

60
W
m
10

D
ith

C
s
Collector Curr ent I C (A)

0m

40
In
s

fin
ite
he

40 1
at
si
nk

0.5
20
20 Without Heatsink
Natural Cooling

0.1
Without Heatsink
3.5
0 0.05
–0.02 –0.1 –1 –6 0
3 5 10 50 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

162

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