PROFET® Preliminary Data Sheet BTS550P

Smart Highside High Current Power Switch

Features Product Summary
• Overload protection
Overvoltage protection Vbb(AZ) 63 V
• Current limitation
• Short circuit protection Output clamp VON(CL) 42 V
• Overtemperature protection Operating voltage Vbb(on) 5.0 ... 34 V
• Overvoltage protection (including load dump) On-state resistance RON 4.0 mΩ
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
Load current (ISO) IL(ISO) 97 A
• Low ohmic inverse current operation Short circuit current limitation IL(SCp) 180 A
• Reverse battery protection Current sense ratio IL : IIS 21000
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection2) TO-218AB/5
• Electrostatic discharge (ESD) protection

Application
• Power switch with current sense diagnostic 5
feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and 1
inductive loads Straight leads
• Replaces electromechanical relays, fuses and
discrete circuits

General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.

3 & Tab
+ V bb
R bb
Voltage Overvoltage Current Gate
source protection limit protection

OUT 1, 5
Limit for
Voltage Charge pump unclamped IL
sensor ind. loads
Level shifter Current
Rectifier Output Sense
2 IN Voltage Load
ESD Logic detection

I IN
Temperature
sensor

I IS 
IS PROFET
Load GND
4
VIN
R
V IS IS

Logic GND

1) With additional external diode.

2) Additional external diode required for energized inductive loads (see page 8).
Semiconductor Group Page 1 of 15 1998-Aug-31
 Preliminary Data Sheet BTS550P

Pin Symbol Function

1 OUT O Output to the load. The pins 1 and 5 must be shorted with each other
especially in high current applications!3)
2 IN I Input, activates the power switch in case of short to ground

3 Vbb Positive power supply voltage, the tab is electrically connected to this pin.
+
In high current applications the tab should be used for the Vbb connection
instead of this pin4).

4 IS S Diagnostic feedback providing a sense current proportional to the load

current; zero current on failure (see Truth Table on page 6)

5 OUT O Output to the load. The pins 1 and 5 must be shorted with each other
especially in high current applications!3)

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 42 V
Supply voltage for full short circuit protection, Vbb 34 V
Tj,start =-40 ...+150°C:
Load current (short circuit current, see page 4) IL self-limited A
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI5) = 2 Ω, RL = 0.54 Ω, td = 200 ms, VLoad dump6) 90 V
IN, IS = open or grounded
Operating temperature range Tj -40 ...+150 °C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC), TC ≤ 25 °C Ptot 360 W
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const., EAS 3 J
IL = 20 A, ZL = 15 mH, 0 Ω, see diagrams on page 9
Electrostatic discharge capability (ESD) VESD 4 kV
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
Current through input pin (DC) IIN +15 , -250 mA
Current through current sense status pin (DC) IIS +15 , -250
see internal circuit diagrams on page 6 and 7

3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current
capability and decrease the current sense accuracy
4) Otherwise add up to 0.5 mΩ (depending on used length of the pin) to the RON if the pin is used instead of
the tab.
5) RI = internal resistance of the load dump test pulse generator.
6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
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 Preliminary Data Sheet BTS550P

Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case: RthJC7) -- -- 0.35 K/W
junction - ambient (free air): RthJA -- 30 --

Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (Tab to pins 1,5, see measurement
circuit page 6) IL = 20 A, Tj = 25 °C: RON -- 3.3 4.0 mΩ
VIN = 0, IL = 20 A, Tj = 150 °C: 6.4 7.8
IL = 120 A, Tj = 150 °C: -- 8
)
Vbb = 6V , IL = 20 A, Tj = 150 °C:
8 RON(Static) -- 9 12
Nominal load current9) (Tab to pins 1,5) IL(ISO) 80 97 -- A
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10)
Maximum load current in resistive range
(Tab to pins 1,5) VON = 1.8 V, Tc = 25 °C: IL(Max) 350 -- --
see diagram on page 12 VON = 1.8 V, Tc = 150 °C: 180 -- -- A
Turn-on time 11) IIN to 90% VOUT: ton 140 -- 600 µs
Turn-off time IIN to 10% VOUT: toff 40 -- 150
RL = 1 Ω , Tj =-40...+150°C
Slew rate on 11) (10 to 30% VOUT ) dV/dton -- 0.45 -- V/µs
RL = 1 Ω ,Tj =25°C
Slew rate off 11) (70 to 40% VOUT ) -dV/dtoff -- 0.55 -- V/µs
RL = 1 Ω ,Tj =25°C

Inverse Load Current Operation

On-state resistance (Pins 1,5 to pin 3)
VbIN = 12 V, IL = - 20 A Tj = 25 °C: RON(inv) -- 3.3 4.0 mΩ
see diagram on page 9 Tj = 150 °C: 6.4 7.8
Nominal inverse load current (Pins 1,5 to Tab) IL(inv) 80 97 -- A
VON = -0.5 V, Tc = 85 °C 10

Drain-source diode voltage (Vout > Vbb) -VON -- 0.8 -- V

IL = - 20 A, IIN = 0, Tj = +150°C

7) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included!
8) Decrease of Vbb below 10 V causes a slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
9) Not tested, specified by design.
10) T is about 105°C under these conditions.
J
11) See timing diagram on page 13.

Semiconductor Group Page 3 1998-Aug-31

 Preliminary Data Sheet BTS550P
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max

Operating Parameters
Operating voltage (VIN = 0) 8, 12) Vbb(on) 5.0 -- 34 V
Undervoltage shutdown 13) VbIN(u) 2.0 3.0 4.5 V
Undervoltage start of charge pump
see diagram page 14 VbIN(ucp) 3.5 4.5 6.0 V
Overvoltage protection14) Tj =-40°C: VbIN(Z) 60 -- -- V
Ibb = 15 mA Tj = 25...+150°C: 62 66 --
Standby current Tj =-40...+25°C: Ibb(off) -- 15 25 µA
IIN = 0 Tj = 150°C: -- 25 50

Protection Functions
Short circuit current limit (Tab to pins 1,5)
VON = 12 V, time until shutdown max. 350 µs
Tc =-40°C: IL(SCp) -- 170 -- A
Tc =25°C: -- 180 250
Tc =+150°C: 120 170 --
Short circuit shutdown delay after input current
positive slope, VON > VON(SC) td(SC) 80 -- 350 µs
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp 15) IL= 40 mA: -VOUT(CL) -- 16.8 -- V
(inductive load switch off) IL= 20 A: -- 19.0 --
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. overvoltage) VON(CL) 39 42 46.5 V
IL= 40 mA
Short circuit shutdown detection voltage
(pin 3 to pins 1,5) VON(SC) -- 6 -- V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis ∆Tjt -- 10 -- K

12) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).
For the voltage range 0..34 V the device is fully protected against overtemperature and short circuit.
13) V
bIN = Vbb - VIN see diagram on page 6. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.
14) See also V
ON(CL) in circuit diagram on page 7.
15) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 7). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.

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 Preliminary Data Sheet BTS550P
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max

Reverse Battery
Reverse battery voltage 16) -Vbb -- -- 32 V
On-state resistance (Pins 1,5 to pin 3) Tj = 25 °C: RON(rev) -- 3.8 4.6 mΩ
Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 kΩ Tj = 150 °C: -- 9
Integrated resistor in Vbb line Rbb -- 120 -- Ω

Diagnostic Characteristics
Current sense ratio, IL = 120 A,Tj =-40°C: kILIS 19 000 21 100 22 500
static on-condition, Tj =25°C: 19 000 20 900 22 500
kILIS = IL : IIS, Tj =150°C: 18 400 19 600 22 000
VON < 1.5 V17), IL = 20 A,Tj =-40°C: 19 300 22 500 25 500
VIS <VOUT - 5 v, Tj =25°C: 19 500 21 500 24 800
VbIN > 4.0 V Tj =150°C: 18 500 20 500 23 000
see diagram on page 11 IL = 12 A,Tj =-40°C: 19 000 23 000 27 500
Tj =25°C: 19 000 22 500 26 000
Tj =150°C: 17 500 20 000 22 000
IL = 6 A,Tj =-40°C: 17 000 26 000 42 000
Tj =25°C: 17 000 23 800 33 000
Tj =150°C: 17 000 20 000 26 000
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
Sense current saturation IIS,lim 6.5 -- -- mA
Current sense leakage current
IIN = 0, VIS = 0: IIS(LL) -- -- 0.5 µA
VIN = 0, VIS = 0, IL ≤ 0: IIS(LH) -- 2 --
Current sense settling time18) ts(IS) -- -- 500 µs
Overvoltage protection Tj =-40°C: VbIS(Z) 60 -- -- V
Ibb = 15 mA Tj = 25...+150°C: 62 66 --

Input
Input and operating current (see diagram page 12) IIN(on) -- 0.8 1.5 mA
IN grounded (VIN = 0)
Input current for turn-off19) IIN(off) -- -- 80 µA

16) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load
(as it is done with all polarity symmetric loads). Note that under off-conditions (I IN = I IS = 0) the power
transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the
intrinsic drain-source diode. The temperature protection is not active during reverse current operation!
Increasing reverse battery voltage capability is simply possible as described on page 8.
17) If V
ON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
18) Not tested, specified by design.
19) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than

500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
Semiconductor Group Page 5 1998-Aug-31
 Preliminary Data Sheet BTS550P
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max

Truth Table
Input Output Current Remark
current Sense
level level IIS
Normal L L 0
operation H H nominal =IL / kilis, up to IIS=IIS,lim
Very high up to VON=VON(Fold back)
H H IIS, lim
load current IIS no longer proportional to IL
Current- VON > VON(Fold back)
H H 0
limitation if VON>VON(SC), shutdown will occure
Short circuit to L L 0
GND H L 0
Over- L L 0
temperature H L 0
Short circuit to L H 0
Vbb H H <nominal 20)
Open load L Z21) 0
H H 0
Negative output L L 0
voltage clamp
Inverse load L H 0
current H H 0
L = "Low" Level
H = "High" Level
Overtemperature reset by cooling: Tj < Tjt (see diagram on page 14)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 13)

Terms
RON measurement layout
I bb
3
VbIN
Vbb VON ≤ 5.5 mm

IL

V IN OUT
bb 2 1,5
PROFET
RIN
IS Vbb force contacts Out Force Sense
V 4 I IS contacts contacts
IN VbIS
(both out
I IN DS pins parallel)
VOUT

VIS R IS

Two or more devices can easily be connected in

parallel to increase load current capability.

20) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
21) Power Transistor "OFF", potential defined by external impedance.
Semiconductor Group Page 6 1998-Aug-31
 Preliminary Data Sheet BTS550P
Input circuit (ESD protection) Short circuit detection
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)
V bb
(80 ...350 µs).
+ Vbb
R bb
V ZD
Z,IN
VON
V bIN
IN

I OUT
IN
Logic Short circuit
unit detection

V IN
Inductive and overvoltage output clamp
+ Vbb
When the device is switched off (IIN = 0) the voltage
between IN and GND reaches almost Vbb. Use a VZ1
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver. VON
VZ,IN = 66 V (typ).

VZG OUT
Current sense status output
PROFET
IS
Vbb VOUT
DS
R bb
V
Z,IS
ZD

IS VON is clamped to VON(Cl) = 42 V typ. At inductive load

I IS switch-off without DS, VOUT is clamped to VOUT(CL) =
VIS -19 V typ. via VZG. With DS, VOUT is clamped to Vbb -
R VON(CL) via VZ1. Using DS gives faster deenergizing of
IS
the inductive load, but higher peak power dissipation in
the PROFET.
VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be Overvoltage protection of logic part
driven only by the internal circuit as long as Vout - VIS > + Vbb
5 V. If you want to measure load currents up to IL(M),
Vbb - 5 V V
Z,IN V Z,IS
R bb
RIS should be less than .
IL(M) / Kilis
R IN
Note: For large values of RIS the voltage VIS can IN
reach almost Vbb. See also overvoltage protection. Logic
V OUT
If you don’t use the current sense output in your
application, you can leave it open. PROFET
IS

R IS RV V Z,VIS

Signal GND

Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ

nominal. Note that when overvoltage exceeds 71 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.

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 Preliminary Data Sheet BTS550P
Reverse battery protection Version b:
- V bb
Rbb
V Vbb
bb
IN
IN PROFET OUT
OUT

Power
R IN Logic Transistor IS

IS
DS V Zb
RL

D RIS RV

Signal GND Power GND

Note that there is no reverse battery protection when
using a diode without additional Z-diode VZL, VZb.
RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse Version c: Sometimes a neccessary voltage clamp is
battery protection in applications with Vbb above given by non inductive loads RL connected to the
1 1 1 same switch and eliminates the need of clamping
16 V16); recommended value: + + = circuit:
RIN RIS RV
0.1A 1 0.1A
if DS is not used (or = if DS
|Vbb| - 12V RIN |Vbb| - 12V
is used). V Vbb
To minimize power dissipation at reverse battery bb RL
operation, the summarized current into the IN and IS
IN PROFET OUT
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or IS
by proper adjusting the current through RIS and RV.

Vbb disconnect with energized inductive

load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL < 72 V or
VZb < 30 V if RIN=0). For higher clamp voltages
currents at IN and IS have to be limited to 250 mA.
Version a:

V
bb V
bb

IN PROFET OUT

IS

V ZL

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 Preliminary Data Sheet BTS550P
Inverse load current operation Energy stored in load inductance:
2
EL = 1/2·L·I L

Vbb While demagnetizing load inductance, the energy

V bb dissipated in PROFET is
- IL
+ IN PROFET OUT EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
-
IS V OUT +
IL· L IL·RL
EAS= ( Vbb + |VOUT(CL)|) ln (1+ )
V IN IIS 2·RL |VOUT(CL)|
-
V IS R IS

Maximum allowable load inductance for

The device is specified for inverse load current
a single switch off
operation (VOUT > Vbb > 0V). The current sense L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
feature is not available during this kind of operation (IIS
= 0). With IIN = 0 (e.g. input open) only the intrinsic L [mH]
drain source diode is conducting resulting in consi- 10000
derably increased power dissipation. If the device is
switched on (VIN = 0), this power dissipation is
decreased to the much lower value RON(INV) * I2
(specifications see page 3).
Note: Temperature protection during inverse load 1000
current operation is not possible!

Inductive load switch-off energy 100

dissipation
E bb

E AS

ELoad 10
V
bb
i L(t)
V bb
IN PROFET OUT

EL 1
IS L
0 5 10 15 20
I
IN
ZL { RL ER IL [A]
RIS

Semiconductor Group Page 9 1998-Aug-31

 Preliminary Data Sheet BTS550P
Options Overview
Type BTS 550P 555
650P
Overtemperature protection with hysteresis X X
Tj >150 °C, latch function22) X
Tj >150 °C, with auto-restart on cooling X
Short circuit to GND protection
switches off when VON>6 V typ. X X
(when first turned on after approx. 180 µs)
Overvoltage shutdown - -
Output negative voltage transient limit
to Vbb - VON(CL) X X
to VOUT = -19 V typ X23) X23)

22) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT
≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
23) Can be "switched off" by using a diode D (see page 7) or leaving open the current sense output.
S

Semiconductor Group Page 10 1998-Aug-31

 Preliminary Data Sheet BTS550P
Characteristics
Current sense versus load current: Current sense ratio:
IIS = f(IL) KILIS = f(IL), TJ = 25 °C
IIS [mA] kilis

7 34000

32000
6

30000
5
28000

4 26000
max
max
3 24000

min
22000 typ
2
20000

1
18000 min

0 16000
0 20 40 60 80 100 120 0 20 40 60 80 100 120

IL [A] IL [A]
Current sense ratio: Current sense ratio:
KILIS = f(IL), TJ = -40 °C KILIS = f(IL), TJ = 150 °C
Kilis Kilis

42000 30000

40000

38000 28000

36000
26000
34000

32000
24000
30000 max
max
28000
22000
26000
max
24000 typ
typ
20000
22000 typ
typ
20000 18000
min
min
18000 min
16000 16000
0 20 40 60 80 100 120 0 20 40 60 80 100 120

IL [A] IL [A]

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 Preliminary Data Sheet BTS550P

Typ. current limitation characteristic Typ. input current

IL = f (VON, Tj ) IIN = f (VbIN), VbIN = Vbb - VIN
IL [A]
IIN [mA]
1.6
700

1.4
600

1.2
500
VON > VON(SC) only for t < td(SC) 1
(otherwise immediate
400
0.8
300
0.6
TJ = 25°C
200
0.4

100 TJ = -40°C TJ = 150°C

0.2

0
VON(FB)
0
0 5 10 15 20
0 20 40 60 80
VON [V]
VbIN [V]
In case of VON > VON(SC) (typ. 6 V) the device will be
switched off by internal short circuit detection.
Typ. on-state resistance
RON = f (Vbb, Tj ); IL = 20 A; VIN = 0
RON [mOhm]
10
static
9
dynamic
8

7
Tj = 150°C
6

5 85°C

4
25°C
3
-40°C
2

0
0 5 10 15 40
20
Vbb [V]

Semiconductor Group Page 12 1998-Aug-31

 Preliminary Data Sheet BTS550P
Timing diagrams
Figure 2b: Switching an inductive load:
Figure 1a: Switching a resistive load,
change of load current in on-condition:
IIN
IIN

VOUT dV/dtoff
90% VOUT
t on

dV/dton
t off
10%

IL tslc(IS) t slc(IS) IL

Load 1 Load 2
IIS
IIS t
tson(IS) t
t soff(IS)

The sense signal is not valid during a settling time

after turn-on/off and after change of load current. Figure 3a: Short circuit:
shut down by short circuit detection, reset by IIN = 0.

Figure 2a: Switching motors and lamps:

IIN

IIN

IL

IL(SCp)

VOUT td(SC)

IIL
IIS
VOUT>>0
VOUT=0
t
IIS
t
Shut down remains latched until next reset via input.
Sense current saturation can occur at very high
inrush currents (see IIS,lim on page 5).

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 Preliminary Data Sheet BTS550P
Figure 4a: Overtemperature
Reset if Tj<Tjt

IIN

IIS

VOUT Auto Restart

Tj

Figure 6a: Undervoltage restart of charge pump,

overvoltage clamp

VOUT

VIN = 0
V ON(CL)

dynamic, short
6
Undervoltage
not below
VbIN(u)
4

2 IIN = 0
VON(CL)
0
0 V bIN(u) 4 V bIN(ucp) V bb

Semiconductor Group Page 14 1998-Aug-31

 Preliminary Data Sheet BTS550P
Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung,
Package and Ordering Code Balanstraße 73, D-81541 München
All dimensions in mm  Siemens AG 1998. All Rights Reserved
Attention please!
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is only assumed for components, not for applications, processes and
E3146 Q67060-S6952A3 circuits implemented within components or assemblies. The
information describes a type of component and shall not be
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to change design reserved. For questions on technology, delivery and
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24) A critical component is a component used in a life-support

device or system whose failure can reasonably be expected to
cause the failure of that life-support device or system, or to affect
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25) Life support devices or systems are intended (a) to be implanted
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Semiconductor Group Page 15 1998-Aug-31