TMUX1208 5-V Bidirectional 8:1, 1-Channel Multiplexer: 1 Features 3 Description
TMUX1208 5-V Bidirectional 8:1, 1-Channel Multiplexer: 1 Features 3 Description
TMUX1208 5-V Bidirectional 8:1, 1-Channel Multiplexer: 1 Features 3 Description
TMUX1208
SCDS389B – AUGUST 2018 – REVISED NOVEMBER 2018
LDO #1
EN
S1
MCU S2
LDO #2 S1
S3
S2 RAM FLASH
LDO #3
S4
S3
S5 D
S4
D Integrated S6
LM20
S5 12-bit ADC S7
Analog Temp.
Sensor S6 S8
LM20 S7
Analog Temp. Port I/O TIMERS
Sensor
S8 1-OF-8
LM20 A1
A2 DECODER
A0
Analog Temp.
GND 1.8V Logic
Sensor
I/O
A0 A1 A2 EN
System Inputs &
Sensors
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TMUX1208
SCDS389B – AUGUST 2018 – REVISED NOVEMBER 2018 www.ti.com
Table of Contents
1 Features .................................................................. 1 8.3 Feature Description................................................. 19
2 Applications ........................................................... 1 9 Application and Implementation ........................ 21
3 Description ............................................................. 1 9.1 Application Information............................................ 21
4 Revision History..................................................... 2 9.2 Typical Application ................................................. 21
9.3 Design Requirements.............................................. 21
5 Device Comparison Table..................................... 3
9.4 Detailed Design Procedure ..................................... 22
6 Pin Configuration and Functions ......................... 3
9.5 Application Curve .................................................... 22
7 Specifications......................................................... 4
10 Power Supply Recommendations ..................... 22
7.1 Absolute Maximum Ratings ...................................... 4
7.2 ESD Ratings.............................................................. 4 11 Layout................................................................... 23
11.1 Layout Guidelines ................................................. 23
7.3 Recommended Operating Conditions....................... 4
11.2 Layout Example .................................................... 23
7.4 Thermal Information .................................................. 4
7.5 Electrical Characteristics (VDD = 5 V ±10 %) ............ 5 12 Device and Documentation Support ................. 24
7.6 Electrical Characteristics (VDD = 3.3 V ±10 %) ......... 7 12.1 Documentation Support ........................................ 24
7.7 Electrical Characteristics (VDD = 1.8 V ±10 %) ......... 9 12.2 Receiving Notification of Documentation Updates 24
7.8 Electrical Characteristics (VDD = 1.2 V ±10 %) ....... 11 12.3 Community Resources.......................................... 24
7.9 Typical Characteristics ............................................ 13 12.4 Trademarks ........................................................... 24
12.5 Electrostatic Discharge Caution ............................ 24
8 Detailed Description ............................................ 14
12.6 Glossary ................................................................ 24
8.1 Overview ................................................................. 14
8.2 Functional Block Diagram ....................................... 19 13 Mechanical, Packaging, and Orderable
Information ........................................................... 24
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Changed the document status From: Advanced Information To: Production data ................................................................ 1
PRODUCT DESCRIPTION
TMUX1208 8:1, 1-Ch. single-ended analog multiplexer
TMUX1208: PW Package
16-Pin TSSOP TMUX1208: RSV Package
Top View 16-Pin QFN
Top View
EN
A1
A0
A2
A0 1 16 A1
EN 2 15 A2
N.C. 3 14 GND
14
16
15
13
S1 4 13 VDD N.C. 1 12 GND
S2 5 12 S5
S1 2 11 VDD
S3 6 11 S6
S2 3 10 S5
S4 7 10 S7
S3 4 9 S6
D 8 9 S8
7
5
8
No t to scale
No t to scale
S8
S4
S7
Pin Functions TMUX1208
PIN
TYPE (1) DESCRIPTION
NAME TSSOP UQFN
A0 1 15 I Address line 0
Active high logic input. When this pin is low, all switches are turned off. When this pin is high,
EN 2 16 I
the A[2:0] logic inputs determine which switch is turned on.
N.C. 3 1 Not Connected Not Connected
S1 4 2 I/O Source pin 1. Can be an input or output.
S2 5 3 I/O Source pin 2. Can be an input or output.
S3 6 4 I/O Source pin 3. Can be an input or output.
S4 7 5 I/O Source pin 4. Can be an input or output.
D 8 6 I/O Drain pin. Can be an input or output.
S8 9 7 I/O Source pin 8. Can be an input or output.
S7 10 8 I/O Source pin 7. Can be an input or output.
S6 11 9 I/O Source pin 6. Can be an input or output.
S5 12 10 I/O Source pin 5. Can be an input or output.
Positive power supply. This pin is the most positive power-supply potential. For reliable
VDD 13 11 P
operation, connect a decoupling capacitor ranging from 0.1 µF to 10 µF between VDD and GND.
GND 14 12 P Ground (0 V) reference
A2 15 13 I Address line 2
A1 16 14 I Address line 1
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2) (3)
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3) All voltages are with respect to ground, unless otherwise specified.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
80 10
VDD= 1.08V 8
60 TA = +125qC TA = +85qC
On Resistance (:)
On Resistance (:)
6
40
VDD= 1.62V 4
20
2
VDD= 3V VDD= 4.5V TA = -40qC TA = +25qC
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5
Source or Drain Voltage (V) D001
Source or Drain Voltage (V) D002
TA = 25°C VDD= 3 V
Figure 1. On-Resistance vs Source or Drain Voltage Figure 2. On-Resistance vs Source or Drain Voltage
30 20
27 TON
24 16
21
12
Time (ns)
Time (ns)
18
TON
TOFF
15
8
12
9 4
TOFF
6
3 0
1.5 2 2.5 3 3.5 4 4.5 5 5.5 -60 -30 0 30 60 90 120 150
VDD - Supply Voltage (V) D003
TA - Temperature (qC) D004
TA = 25°C VDD= 3.3 V
Figure 3. TON (EN) and TOFF (EN) vs Supply Voltage Figure 4. TON (EN) and TOFF (EN) vs Temperature
30 0
-10 Bandwidth
25
-20
20 -30 Off-Isolation
Gain (dB)
Time (ns)
TTRANSITION_FALLING -40
15
-50
TTRANSITION_RISING
10 -60
-70
5
-80
0 -90
0.5 1.5 2.5 3.5 4.5 5.5 100k 1M 10M 100M
VDD - Supply Voltage (V) D005
Frequency (Hz) D006
TA = 25°C TA = 25°C
8 Detailed Description
8.1 Overview
8.1.1 On-Resistance
The on-resistance of a device is the ohmic resistance between the source (Sx) and drain (D) pins of the device.
The on-resistance varies with input voltage and supply voltage. The symbol RON is used to denote on-resistance.
The measurement setup used to measure RON is shown below. Voltage (V) and current (ISD) are measured using
this setup, and RON is computed as shown in with RON = V / ISD:
ISD
Sx D
VS
VDD VDD
S1 S1
A
S2 ID (OFF)
S2 D
D
A
VS
S8
S8
VS
VD VD
GND GND
Overview (continued)
8.1.3 On-Leakage Current
Source on-leakage current is defined as the leakage current flowing into or out of the source pin when the switch
is on. This current is denoted by the symbol IS(ON).
Drain on-leakage current is defined as the leakage current flowing into or out of the drain pin when the switch is
on. This current is denoted by the symbol ID(ON).
Either the source pin or drain pin is left floating during the measurement. shows the circuit used for measuring
the on-leakage current, denoted by IS(ON) or ID(ON).
VDD VDD
VDD VDD
IS (ON)
S1 S1
N.C. A
S2 ID (ON) S2
D D
A N.C.
S8 S8
Vs
VS VS
VD
GND GND
VDD
0.1…F
VDD
VDD
ADDRE SS
tr < 5ns tf < 5ns
DRIVE
(VSEL) VIH S1
VIL VS OUTPUT
D
0V S2
S8
RL CL
A0
90%
A1
OUTPUT
VSEL
A2
10% GND
0V
Overview (continued)
8.1.5 Break-Before-Make Delay
Break-before-make delay is a safety feature that prevents two inputs from connecting when the device is
switching. The output first breaks from the on-state switch before making the connection with the next on-state
switch. The time delay between the break and the make is known as break-before-make delay. shows the setup
used to measure break-before-make delay, denoted by the symbol tOPEN(BBM).
VDD
0.1…F
VDD
VDD
S1
ADDRE SS VS OUTPUT
DRIVE tr < 5ns tf < 5ns D
(VSEL) S2-S7
0V
RL CL
S8
90%
Output
A0
tBBM 1 tBBM 2
0V A1
tOPEN (BBM) = min ( tBBM 1, tBBM 2) VSEL
A2
GND
VDD
0.1…F
VDD
VDD
tr < 5ns tf < 5ns
ENABL E
S1
DRIVE VS OUTPUT
VIH
(VEN) D
VIL
S2
0V RL CL
S8
A0
EN
90%
A1
OUTPUT
VEN
A2
10% GND
0V
Overview (continued)
8.1.7 Charge Injection
The TMUX1208 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS
transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal.
The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted
by the symbol QC. shows the setup used to measure charge injection from source (Sx) to drain (D).
VDD
0.1…F
VDD
VDD
VS S1
OUTPUT
D
VOUT
0V S2
CL
S8
Output
VOUT
VS QC = CL × VOUT A0
EN
A1
VEN
A2
GND
0.1µF
NETWORK
VDD
ANALYZER
VS
S 50Q
VSIG
VOUT
RL
SX/DX
50Q
GND
RL
50Q
§V ·
Off Isolation 20 ˜ Log ¨ OUT ¸
© VS ¹ (1)
Overview (continued)
8.1.9 Crosstalk
Crosstalk is defined as the ratio of the signal at the drain pin (D) of a different channel, when a signal is applied
at the source pin (Sx) of an on-channel. shows the setup used to measure, and the equation used to compute
crosstalk.
0.1µF
NETWORK
VDD
ANALYZER
S1
VOUT
RL
D
50Q
VS
RL
S2 50Q
50Q
VSIG SX
RL GND
50Q
§V ·
Channel-to-Channel Crosstalk 20 ˜ Log ¨ OUT ¸
© VS ¹ (2)
8.1.10 Bandwidth
Bandwidth is defined as the range of frequencies that are attenuated by less than 3 dB when the input is applied
to the source pin (Sx) of an on-channel, and the output is measured at the drain pin (D) of the device. shows the
setup used to measure bandwidth.
0.1µF
NETWORK
VDD
ANALYZER
VS
S 50Q
VSIG
VOUT
RL
50Q
GND
§V ·
Attenuation 20 ˜ Log ¨ 2 ¸
© V1 ¹ (3)
TMUX1208
S1
S2
S3
S4
S5 D
S6
S7
S8
1-OF-8
DECODER
A0 A1 A2 EN
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
VDD
VDD VI/O
VDD
LDO #1
EN
MCU
LDO #2 S1
S2 RAM FLASH
LDO #3
S3
S4
D Integrated
LM20
S5 12-bit ADC
Analog Temp.
Sensor S6
LM20 S7
Analog Temp. Port I/O TIMERS
S8
Sensor
A2
LM20 A1
A0
Analog Temp.
GND 1.8V Logic
Sensor
I/O
VDD= 1.08V
60
On Resistance (:)
40
VDD= 1.62V
20
VDD= 3V VDD= 4.5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Source or Drain Voltage (V) D001
TA = 25°C
Figure 19. On-Resistance vs Source or Drain Voltage
The TMUX1208 operates across a wide supply range of 1.08 V to 5.5 V.. Do not exceed the absolute maximum
ratings because stresses beyond the listed ratings can cause permanent damage to the devices.
Power-supply bypassing improves noise margin and prevents switching noise propagation from the VDD supply to
other components. Good power-supply decoupling is important to achieve optimum performance. For improved
supply noise immunity, use a supply decoupling capacitor ranging from 0.1 μF to 10 μF from VDD to ground.
Place the bypass capacitors as close to the power supply pins of the device as possible using low-impedance
connections. TI recommends using multi-layer ceramic chip capacitors (MLCCs) that offer low equivalent series
resistance (ESR) and inductance (ESL) characteristics for power-supply decoupling purposes. For very sensitive
systems, or for systems in harsh noise environments, avoiding the use of vias for connecting the capacitors to
the device pins may offer superior noise immunity. The use of multiple vias in parallel lowers the overall
inductance and is beneficial for connections to ground planes.
11 Layout
2W
1W min.
W
Figure 20. Trace Example
Route high-speed signals using a minimum of vias and corners which reduces signal reflections and
impedance changes. When a via must be used, increase the clearance size around it to minimize its
capacitance. Each via introduces discontinuities in the signal’s transmission line and increases the chance of
picking up interference from the other layers of the board. Be careful when designing test points, through-
hole pins are not recommended at high frequencies.
Figure 21 illustrates an example of a PCB layout with the TMUX1208. Some key considerations are:
• Decouple the VDD pin with a 0.1-µF capacitor, placed as close to the pin as possible. Make sure that the
capacitor voltage rating is sufficient for the VDD supply.
• Keep the input lines as short as possible.
• Use a solid ground plane to help reduce electromagnetic interference (EMI) noise pickup.
• Do not run sensitive analog traces in parallel with digital traces. Avoid crossing digital and analog traces if
possible, and only make perpendicular crossings when necessary.
A0 A1
EN A2 Wide (low inductance)
C
GND trace for power
N.C. Via to
grou nd plane VDD
S1
S2 S5
S3 TMUX120 8 S6
S4 S7
D S8
12.4 Trademarks
E2E is a trademark of Texas Instruments.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 21-Nov-2018
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
TMUX1208PWR ACTIVE TSSOP PW 16 2000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 125 TM1208
& no Sb/Br)
TMUX1208RSVR ACTIVE UQFN RSV 16 3000 Green (RoHS CU NIPDAUAG Level-1-260C-UNLIM -40 to 125 1B4
& no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 21-Nov-2018
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 21-Nov-2018
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 21-Nov-2018
Pack Materials-Page 2
PACKAGE OUTLINE
PW0016A SCALE 2.500
TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
SEATING
PLANE
6.6 C
TYP
A 6.2
0.1 C
PIN 1 INDEX AREA
14X 0.65
16
1
2X
5.1 4.55
4.9
NOTE 3
8
9
0.30
4.5 16X 1.2 MAX
B 0.19
4.3
NOTE 4 0.1 C A B
(0.15) TYP
SEE DETAIL A
0.25
GAGE PLANE
0.15
0.05
0.75
0.50
0 -8
DETAIL A
A 20
TYPICAL
4220204/A 02/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-153.
www.ti.com
EXAMPLE BOARD LAYOUT
PW0016A TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
SYMM
14X (0.65)
8 9
(5.8)
4220204/A 02/2017
NOTES: (continued)
www.ti.com
EXAMPLE STENCIL DESIGN
PW0016A TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
SYMM
14X (0.65)
8 9
(5.8)
4220204/A 02/2017
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
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