Hart Chapter 3 Solutions
Hart Chapter 3 Solutions
Hart Chapter 3 Solutions
2/20/10
3-1)
V0 Vm 170 /
a) I 0 3.60 A.
R R 15
V V 170
b) I rms rms m 5.66 A.
R 2 R 2(15)
c) P I 2 R 5.66 2 (15) 480 W .
170
d ) S Vrms I rms (5.66) 679 VA.
2
P 480 W
e) pf 0.707 70.7%
S 679 VA
3-2)
V0
a ) I 0 12 A.; I 0 V0 I 0 R (12)(20) 240 V .
R
Vm
Vo ; Vm Vo 240 754 V .
754
Vrms 533 V .
2
N1 240
0.45
N 2 533
N2 12
b) I o I o 26.7 A.
N1 0.45
3-3)
P P V V V
a) pf ; I rms s ,rms ; VR ,rms m ; Vs ,rms m
S Vs ,rms I rms R 2 2
Vm
2 / R
pf
V /R
R , rms
2
2
1
Vs ,rms I rms Vm Vm 2 2
2 / R
2
b) Displacement pf cos(1 ) cos(0) 1
V1 1 Vm 1
I1 0; pf cos(1 1 ) DF ; DF
R R 2 2
Vm V
a) i (t ) sin(t ) m (sin )e t /
Z Z
Z R 2 ( L) 2 122 (377(0.012)) 2 12.8
L 1 377(0.012)
tan 1 tan 0.361 rad
R 12
L 377(0.012)
0.377
R 12
i (t ) 13.2sin(t 0.361) 4.67e t /0.377 : 3.50 rad 201
b) I avg 4.36 A. (numerical integration)
c) I rms 6.70 A. (numerical integration) P I rms
2
R (6.70) 2 (12) 538 W .
P 538
d ) pf 0.67
S (120)(6.70)
3-5) Using Eq. 3-15,
Vm V
a) i (t ) sin(t ) m (sin )e t /
Z Z
Z R 2 ( L) 2 102 (377(0.015)) 2 11.5
L 1 377(0.015)
tan 1 tan 0.515 rad
R 10
L 377(0.015)
0.565
R 10
i (t ) 14.8sin(t 0.515) 7.27e t /0.565 : 3.657 rad 209.5
b) I avg 5.05 A. (numerical integration)
c) I rms 7.65 A. (numerical integration) P I rms
2
R (7.65) 2 (10) 584 W .
P 584
d ) pf 0.637 63.7%
S (120)(7.65)
Vm V
a) i (t ) sin(t ) m (sin )e t /
Z Z
Z R 2 ( L) 2 152 (377(0.08)) 2 33.7
L 1 377(0.08)
tan 1 tan 1.11 rad
R 15
L 377(0.08)
2.01
R 15
i (t ) 10.1sin(t 1.11) 9.02e t /2.01 : 4.35 rad 250
b) I avg 4.87 A. (numerical integration)
c) I rms 6.84 A. (numerical integration) P I rms
2
R (6.84) 2 (15) 701 W .
P 701
d ) pf 0.427 42.7%
S (240)(6.84)
3-7) Using an ideal diode model, R = 48 Ω for an average current of 2 A.
8.0A
Current
Iavg = 2 A for R = 48 ohms
4.0A
(16.700m,2.0030)
Average Current
0A
0s 5ms 10ms 15ms 20ms
I(R1) AVG(I(L1))
Time
3-8) Using Eqs. 3-22 and 3-23,
Vm V
a ) i (t ) sin(t ) dc Ae t /
Z R
V V
A m sin( ) dc e /
Z R
Z R 2 ( L) 2 10 2 (377(.075) 2 30.0
L 1 377(.075)
tan 1 tan 1.23 rad
R 10
L 377(0.075)
2.83
R 10
V 100
sin 1 dc 0.299 rad 17.1
Vm 240 2
i (t ) 11.3sin(t 1.23) 10 21.2e t /2.83 ; 3.94 rad 226
I avg 3.13 A. (numerical integration), Pdc Vdc I avg (100)(3.13) 313 W .
b) I rms 4.81 A. ( numerical integration) PR I rms
2
R (4.81) 2 (10) 231 W .
P 313 231
c) pf 0.472 47.2%
S (240)(4.81)
3-9) Using Eqs. 3-22 and 3-23,
Vm V
a ) i (t ) sin(t ) dc Ae t /
Z R
V V
A m sin( ) dc e /
Z R
Z R 2 ( L) 2 122 (377(0.12) 2 46.8
L 1 377(0.12)
tan 1 tan 1.31 rad
R 12
L 377(0.12)
3.77
R 12
V 48
sin 1 dc 0.287 rad 16.4
Vm 120 2
i (t ) 3.63sin(t 1.31) 4.0 7.66e t /3.77 ; 4.06 rad 233
I avg 1.124 A. (numerical integration), Pdc Vdc I avg (48)(1.124) 54.0 W .
b) I rms 1.70 A. (numerical integration) PR I rms
2
R (1.70) 2 (12) 34.5 W .
P 54.0 34.5
c) pf 0.435 43.5%
S (120)(1.70)
Vm V
i (t ) (cos cos t ) dc ( t )
L L
V 48
sin 1 dc sin 1 0.287 rad .
Vm 120 2
i (t ) 4.68 4.50 cos(t ) 1.23t A.; 4.483 rad 257
1
Io
2 i(t )d (t ) 2.00 A.; P
dc I oVdc 2.00(48) 96 W .
3-11)
300W
200W
L = 0.25 H
100W
0W
0s 5ms 10ms 15ms 20ms
AVG(W(Vdc))
Time
3-12) L ≈ 0.14 H for 50 W (51 W).
100W
(16.670m,51.156)
50W
L = 0.14 H
0W
0s 5ms 10ms 15ms 20ms
AVG(W(Vdc))
Time
3-13) Using Eq. 3-34,
a)
Vm 120 2 V0 54
V0 54.0 V .; I 0 4.50 A.
R 12
b)
n Vn Zn In
0 54.02 12.00 4.50
1 84.85 25.6 3.31
2 36.01 46.8 0.77
4 7.20 91.3 0.08
The terms beyond n = 1 are insignificant.
3-14)
Run a transient response long enough to achieve steady-state results (e.g., 1000ms). The peak-to-
peak load current is approximately 1.48 A, somewhat larger than the 1.35 A obtained using only
the first harmonic. (The inductance should be slightly larger, about 0.7 H, to compensate for the
approximation of the calculation.)
3-15)
a)
Vm 50
I0 3.98 A.
R 4
V Vm / 2 25
I1 1 0.05I 0 0.199 A.
Z1 R 2 ( L) 2 R 2 ( L) 2
25
R 2 ( L) 2 9 ( L) 2 125 L
0.199
125
L 0.33 H
2 60
b) A PSpice simulation using an ideal diode model gives 0.443 A p-p in the steady state. This
compares with 2(I1)=2(0.199)=0.398 A p-p.
3-16)
Vm 170
a ) V0 54.1 V
V0 Vdc 54.1 24
I0 3.01 A.
R 10
io 1 A. 2 I1 I1 0.5 A.
Vm 170
V1 85 V
2 2
V 85
Z1 1 170 R 2 ( L) 2 L
I1 0.5
170
L 450 mH .
377
b) Pdc I avgVdc (3.01)(24) 72.2 W .
c) PR I rms
2
R; I rms I 2
n , rms (3.01) 2 (0.5 / 2) 2 3.12 A.
PR (3.12) 2 (10) 97.4 W .
3-17) a) τ = RC = 10310-3=1 s; τ/T = 60. With τ >> T, the exponential decay is very small
and the output voltage has little variation.
b) Exact equations:
Vm 200
Vo 3.33 V .
fRC (60)(103 )(103 )
3-18) a) R = 100 Ω: τ = RC (100)10-3 = 0.1 s; τ/T = 6.
In (a) with τ/T=6, the approximation is much more reasonable than (b) where τ/T=0.6.
3-19) a) With C = 4000 µF, RC = 4 s., and the approximation of Eq. 3-51 should be reasonable.
Vm 120 2
Vo 0.707 V .
fRC (60)(4)
b) With C = 20 µF, RC = 0.02, which is on the order of one source period. Therefore,
the approximation will not be reasonable and exact equations must be used.
Vm 120 2
Vo 1.41 V .
fRC (60)(2.0)
b) With C = 20 µF, RC = 0.01, which is on the order of one source period. Therefore,
the approximation will not be reasonable and exact equations must be used.
Vm 120 2
C 1,886 F
fRVo 60(750)(2)
Vo 1 2
sin 1 1 sin 1 1.417 rad 81.2
Vm 120 2
sin
I D , peak Vm C cos 18.7 A.
R
V
I D ,avg m 0.226 A.
R
Vm 120 2
C 3, 270 F
fRVo 60(576)(1.5)
Vo 1 1.5
sin 1 1 sin 1 1.438 rad 82.4
Vm 120 2
sin
I D , peak Vm C cos 28.1 A.
R
V
I D ,avg m 0.295 A.
R
3-23) Using the definition of power factor and Vrms from Eq. 3-53,
2 2
P Vrms /R Vrms /R V
pf rms
S (Vs ,rms )( I s ,rms ) (Vs ,rms )(Vrms / R) Vs ,rms
Vm sin 2
1
2 2 1 1 sin 2 1 sin 2
Vm / 2 2 2 2 2 4
3-24)
Vm 120 2
a ) Vo (1 cos ) (1 cos 45) 46.1 V .
2 2
V2 V sin 2
b) P rms ; Vrms m 1
R 2 2
120 2 0.785 sin(2(0.785))
1 80.9 V .
2 2
80.92
P 65.5 W .
100
80.9 P 65.5
c) S Vs ,rms I rms (120) 97.1 VA; pf 0.674 67.4%
100 S 97.1
3-25)
Vm
a ) vo I o R (2.5)(30) 75 V (1 cos )
2
2 Vo 2 (75)
cos 1 1 cos 1 1 65.5 or 1.143 rad
Vm 240 2
Vo2,rms
b) P
R
Vm sin 2 240 2 1.143 sin(2(1.143))
Vo ,rms 1 1 147.6 V .
2 2 2 2
147.62
P 726 W .
30
147.6 P 726
c) S Vs ,rms I rms (240) 1181 VA; pf 0.615 61.5%
30 S 1181
3-26)
1 2
2
c) I rms i (t )d (t ) 2.80 A.; Po PR I rms
2
R (2.80) 2 25 193 W .
3-27)
1 2
2
c) I rms i (t )d (t ) 1.50 A.; Po PR I rms
2
R (1.50) 2 40 90.3 W .
3-28) α ≈ 46°. Do a parametric sweep for alpha. Use the default (Dbreak) diode, and use Ron =
0.01 for the switch. Alpha of 46 degrees results in approximately 2 A in the load.
3-29) α ≈ 60.5°. Do a parametric sweep for alpha. Use the default (Dbreak) diode, and use Ron
= 0.01 for the switch. Alpha of 60.5 degrees results in approximately 1.8 A in the load.
3-30) From Eq. 3-61,
a ) i (t ) 4.29sin(t 1.263) 4.0 7.43e t /3.142 A., 0.873 t 3.95 rad
1
2
Io i (t )d (t ) 1.04 A., Pdc I oVdc (1.04)(48) 50.1 W .
1 2
b) I rms i (t )d (t ) 1.67 A.; PR I rms R (1.67) 212 33.5 W .
2
2
P 50.1 33.5
c) pf 0.417 41.7%
S (120)(1.67)
a ) i (t ) 2.95sin(t 0.515) 0.96 3.44e t /0.565 A., 1.047 t 3.32 rad
1
2
Io i (t )d (t ) 0.454 A., Pdc I oVdc (0.454)(96) 43.6 W .
1 2
i (t )d (t ) 0.830 A.; PR I rms R (0.830) 2100 69.0 W .
2
b) I rms
2
P 43.6 69.0
c) pf 0.565 56.5%
S (240)(0.830)
3-32) α ≈ 75°. Alpha = 75 degrees gives 35 W in the dc voltage source. An Ron = 0.01 for the
switch and n = 0.001 for the diode (ideal model).
3-33) From Eq. 3-61,
a ) i (t ) 5.99sin(t 1.50) 24.0 29.3e t /14.1 A., 0.873 t 4.24 rad
1
2
Io i (t )d (t ) 1.91 A., Pdc I oVdc (1.91)(48) 91.6 W .
1 2
i (t )d (t ) 2.93 A.; PR I rms R (2.93) 2 2 17.1 W .
2
b) I rms
2
3-34) α ≈ 81°
3-35)
di (t )
L Vm sin t Vdc
dt
di (t ) 1
[Vm sin t Vdc ] or
dt L
di (t ) 1
[Vm sin t Vdc ]
d (t ) L
t
1
L m
i (t ) (V sin t Vdc )d (t )
Vm V
(cos cos t ) dc ( t )
L L
i (t ) 4.34 7.58cos t 1.82t A., 1.309 t 4.249
1
2
Io i (t )d (t ) 1.91 A.
3-36)
3-37)
I X
u cos 1 1 L s ; X s Ls 377(1.5)(10) 3 0.566
Vm
5(0.452)
u cos 1 1 10.47
120 2
Vm X L X s 120 2 5(.566)
Vo 1 1 53.57 V .
2Vm 2 2(120)
V
(compared to m 54.0 V .)
PSpice:
3-38) u = 20°. Run the simulation long enough for steady-state results. From the Probe output,
the commutation angle from D1 to D2 is about 20 degrees, and from D2 to D1 is about
18 degrees. Note that the time axis is changed to angle in degrees here.
3-39) Run the simulation long enough for steady-state results. From the Probe output, the
commutation angle from D1 to D2 is about 16.5 degrees, and from D2 to D1 is about
14.7 degrees. Note that the time axis is changed to angle in degrees here.
3-40) At ωt = π, D2 turns on, D1 is on because of the current in LS (see Fig. 3-17).
diD1 did 1
KVL; vLS Vm sin t Ls LS
dt d (t )
t
diD1 V
m
d t Ls sin(t )d (t ) i
D1 ( )
Vm
at t u , iD1 0 [1 cos( u )] I L
Ls
Vm V
cos( u ) cos u 0 ( 1 cos u ) I L m cos u I L
Ls Ls
I X
u cos 1 1 L s
Vm
3-41) At ωt = α,
t
1 V
is (t )
Ls
Vm sin(t )d (t ) 0 m [cos cos t ]
Ls
Vm
iD 2 ( wt ) I L is I L [cos cos t ]
Ls
Vm
iD 2 ( u ) 0 I L [cos cos( u )]
Ls
I L Ls
cos cos( u )
Vm
I X
u cos 1 cos L s
Vm
3-42) A good solution is to use a controlled half-wave rectifier with an inductor in series with the
48-V source and resistance (Fig. 3-15). The switch will change the delay angle of the
SCR to produce the two required power levels. The values of the delay angle depend on
the value selected for the inductor. This solution avoids adding resistance, thereby
avoiding introducing power losses.
3-43) Several circuit can accomplish this objective, including the half-wave rectifier of Fig. 3-2a
and half-wave rectifier with a freewheeling diode of Fig. 3-7, each with resistance added.
Another solution is to use the controlled half-wave rectifier of Fig. 3-14a but with no
resistance. The analysis of that circuit is like that of Fig. 3-6 but without Vdc. The
resulting value of α is 75°, obtain from a PSpice simulation. That solution is good
because no resistance is needed, and losses are not introduced.
3-44 and 3-45) The controlled half-wave rectifier of Fig. 3-15 (without the resistance) can be
used to satisfy the design specification. The value of the delay angle depends on the value
selected for the inductor.