ULN200x, ULQ200x High-Voltage, High-Current Darlington Transistor Arrays

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ULN2002A, ULN2003A, ULN2003AI

ULQ2003A, ULN2004A, ULQ2004A
SLRS027O – DECEMBER 1976 – REVISED JANUARY 2016
ULN200x, ULQ200x High-Voltage, High-Current Darlington Transistor Arrays

1 Features The ULx2004A devices have a 10.5-kΩ series base
resistor to allow operation directly from CMOS
•
1 500-mA-Rated Collector Current (Single Output) devices that use supply voltages of 6 V to 15 V. The
• High-Voltage Outputs: 50 V required input current of the ULx2004A device is
• Output Clamp Diodes below that of the ULx2003A devices, and the required
• Inputs Compatible With Various Types of Logic voltage is less than that required by the ULN2002A
device.
• Relay-Driver Applications
.
2 Applications
Device Information(1)
• Relay Drivers PART NUMBER PACKAGE BODY SIZE (NOM)
• Stepper and DC Brushed Motor Drivers ULx200xD SOIC (16) 9.90 mm × 3.91 mm
• Lamp Drivers ULx200xN PDIP (16) 19.30 mm × 6.35 mm
• Display Drivers (LED and Gas Discharge) ULN200xNS SOP (16) 10.30 mm × 5.30 mm
• Line Drivers ULN200xPW TSSOP (16) 5.00 mm × 4.40 mm
• Logic Buffers (1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description .
The ULx200xA devices are high-voltage, high-current
Darlington transistor arrays. Each consists of seven .
NPN Darlington pairs that feature high-voltage
outputs with common-cathode clamp diodes for Simplified Block Diagram
switching inductive loads. 9
COM
The collector-current rating of a single Darlington pair 1 16
1B 1C
is 500 mA. The Darlington pairs can be paralleled for
higher current capability. Applications include relay
2 15
drivers, hammer drivers, lamp drivers, display drivers 2B 2C
(LED and gas discharge), line drivers, and logic
buffers. For 100-V (otherwise interchangeable) 3 14
versions of the ULx2003A devices, see the SLRS023 3B 3C
data sheet for the SN75468 and SN75469 devices.
4 13
The ULN2002A device is designed specifically for use 4B 4C
with 14-V to 25-V PMOS devices. Each input of this
device has a Zener diode and resistor in series to 5 12
5B 5C
control the input current to a safe limit. The
ULx2003A devices have a 2.7-kΩ series base resistor 6 11
for each Darlington pair for operation directly with 6B 6C
TTL or 5-V CMOS devices.
7 10
7B 7C
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SLRS027O – DECEMBER 1976 – REVISED JANUARY 2016 www.ti.com
Table of Contents
1 Features .................................................................. 1 7 Parameter Measurement Information ................ 10
2 Applications ........................................................... 1 8 Detailed Description ............................................ 12
3 Description ............................................................. 1 8.1 Overview ................................................................. 12
4 Revision History..................................................... 2 8.2 Functional Block Diagrams ..................................... 12
5 Pin Configuration and Functions ......................... 3 8.3 Feature Description................................................. 13
8.4 Device Functional Modes........................................ 13
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4 9 Application and Implementation ........................ 14
6.2 ESD Ratings.............................................................. 4 9.1 Application Information............................................ 14
6.3 Recommended Operating Conditions....................... 4 9.2 Typical Application ................................................. 14
6.4 Thermal Information .................................................. 4 9.3 System Examples ................................................... 17
6.5 Electrical Characteristics: ULN2002A ....................... 5 10 Power Supply Recommendations ..................... 18
6.6 Electrical Characteristics: ULN2003A and 11 Layout................................................................... 18
ULN2004A.................................................................. 5 11.1 Layout Guidelines ................................................. 18
6.7 Electrical Characteristics: ULN2003AI ...................... 6 11.2 Layout Example .................................................... 18
6.8 Electrical Characteristics: ULN2003AI ..................... 6 12 Device and Documentation Support ................. 19
6.9 Electrical Characteristics: ULQ2003A and 12.1 Documentation Support ........................................ 19
ULQ2004A ................................................................. 7
12.2 Related Links ........................................................ 19
6.10 Switching Characteristics: ULN2002A, ULN2003A,
12.3 Community Resources.......................................... 19
ULN2004A.................................................................. 7
12.4 Trademarks ........................................................... 19
6.11 Switching Characteristics: ULN2003AI .................. 7
12.5 Electrostatic Discharge Caution ............................ 19
6.12 Switching Characteristics: ULN2003AI .................. 8
12.6 Glossary ................................................................ 19
6.13 Switching Characteristics: ULQ2003A, ULQ2004A 8
6.14 Typical Characteristics ............................................ 8 13 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision N (June 2015) to Revision O Page
• Changed Pin Functions table to correct typographical error. ................................................................................................ 3
Changes from Revision M (February 2013) to Revision N Page
• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
• Deleted Ordering Information table. No specification changes. ............................................................................................. 1
• Moved Typical Characteristics into Specifications section. ................................................................................................... 8
Changes from Revision L (April 2012) to Revision M Page
• Updated temperature rating for ULN2003AI in the ORDERING INFORMATION table ........................................................ 1
Changes from Revision K (August 2011) to Revision L Page
• Removed reference to obsolete ULN2001 device.................................................................................................................. 1
2 Submit Documentation Feedback Copyright © 1976–2016, Texas Instruments Incorporated
Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A

www.ti.com SLRS027O – DECEMBER 1976 – REVISED JANUARY 2016
5 Pin Configuration and Functions
D, N, NS, and PW Package

16-Pin SOIC, PDIP, SO, and TSSOP
Top View
1B 1 16 1C
2B 2 15 2C
3B 3 14 3C
4B 4 13 4C
5B 5 12 5C
6B 6 11 6C
7B 7 10 7C
E 8 9 COM
Pin Functions
PIN
I/O (1) DESCRIPTION
NAME NO.
1B 1
2B 2
3B 3
4B 4 I Channel 1 through 7 Darlington base input
5B 5
6B 6
7B 7
1C 16
2C 15
3C 14
4C 13 O Channel 1 through 7 Darlington collector output
5C 12
6C 11
7C 10
COM 9 — Common cathode node for flyback diodes (required for inductive loads)
E 8 — Common emitter shared by all channels (typically tied to ground)
(1) I = Input, O = Output
Copyright © 1976–2016, Texas Instruments Incorporated Submit Documentation Feedback 3

6 Specifications
6.1 Absolute Maximum Ratings
at 25°C free-air temperature (unless otherwise noted) (1)
MIN MAX UNIT
VCC Collector-emitter voltage 50 V
(2)
Clamp diode reverse voltage 50 V
VI Input voltage (2) 30 V
Peak collector current, See Figure 4 and Figure 5 500 mA
IOK Output clamp current 500 mA
Total emitter-terminal current –2.5 A
ULN200xA –20 70
ULN200xAI –40 105
TA Operating free-air temperature range °C
ULQ200xA –40 85
ULQ200xAT –40 105
TJ Operating virtual junction temperature 150 °C
Lead temperature for 1.6 mm (1/16 inch) from case for 10 seconds 260 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.
6.2 ESD Ratings

VALUE UNIT
Electrostatic Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000
V(ESD) V
discharge Charged device model (CDM), per JEDEC specification JESD22-C101 (2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Collector-emitter voltage (non-V devices) 0 50 V
TJ Junction temperature –40 125 °C
6.4 Thermal Information

ULx200x
D N NS PW
THERMAL METRIC (1) UNIT
(SOIC) (PDIP) (SO) (TSSOP)
16 PINS 16 PINS 16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 73 67 64 108 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 36 54 n/a 33.6 °C/W
RθJB Junction-to-board thermal resistance n/a n/a n/a 51.9 °C/W
ψJT Junction-to-top characterization parameter n/a n/a n/a 2.1 °C/W
ψJB Junction-to-board characterization parameter n/a n/a n/a 51.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.

6.5 Electrical Characteristics: ULN2002A

TA = 25°C
ULN2002A
PARAMETER TEST FIGURE TEST CONDITIONS UNIT
MIN TYP MAX
VI(on) ON-state input voltage Figure 14 VCE = 2 V, IC = 300 mA 13 V
High-level output voltage after
VOH Figure 18 VS = 50 V, IO = 300 mA VS – 20 mV
switching
II = 250 μA, IC = 100 mA 0.9 1.1
Collector-emitter saturation
VCE(sat) Figure 12 II = 350 μA, IC = 200 mA 1 1.3 V
voltage
II = 500 μA, IC = 350 mA 1.2 1.6
VF Clamp forward voltage Figure 15 IF = 350 mA 1.7 2 V
Figure 9 VCE = 50 V, II = 0 50
ICEX Collector cutoff current VCE = 50 V, II = 0 100 μA
Figure 10
TA = 70°C VI = 6 V 500
II(off) OFF-state input current Figure 10 VCE = 50 V, IC = 500 μA 50 65 μA
II Input current Figure 11 VI = 17 V 0.82 1.25 mA
VR = 50 V TA = 70°C 100
IR Clamp reverse current Figure 14 μA
VR = 50 V 50
Ci Input capacitance VI = 0, f = 1 MHz 25 pF
6.6 Electrical Characteristics: ULN2003A and ULN2004A

TA = 25°C
TEST ULN2003A ULN2004A
PARAMETER TEST CONDITIONS UNIT
FIGURE MIN TYP MAX MIN TYP MAX
IC = 125 mA 5
IC = 200 mA 2.4 6
ON-state input IC = 250 mA 2.7
VI(on) Figure 14 VCE = 2 V V
voltage IC = 275 mA 7
IC = 300 mA 3
IC = 350 mA 8
High-level output
VOH voltage after Figure 18 VS = 50 V, IO = 300 mA VS – 20 VS – 20 mV
switching
II = 250 μA, IC = 100 mA 0.9 1.1 0.9 1.1
Collector-emitter
VCE(sat) Figure 13 II = 350 μA, IC = 200 mA 1 1.3 1 1.3 V
saturation voltage
II = 500 μA, IC = 350 mA 1.2 1.6 1.2 1.6
Figure 9 VCE = 50 V, II = 0 50 50
Collector cutoff
ICEX VCE = 50 V, II = 0 100 100 μA
current Figure 10
TA = 70°C VI = 6 V 500
Clamp forward IF = 350 mA
VF Figure 16 1.7 2 1.7 2 V
voltage
Off-state input VCE = 50 V,
II(off) Figure 11 IC = 500 μA 50 65 50 65 μA
current TA = 70°C,
VI = 3.85 V 0.93 1.35
VI = 12 V 1 1.45
Clamp reverse VR = 50 V 50 50
IR Figure 15 μA
current VR = 50 V TA = 70°C 100 100
Ci Input capacitance VI = 0, f = 1 MHz 15 25 15 25 pF

6.7 Electrical Characteristics: ULN2003AI

TA = 25°C
TEST ULN2003AI
PARAMETER TEST FIGURE UNIT
CONDITIONS MIN TYP MAX
IC = 200 mA 2.4
VI(on) ON-state input voltage Figure 14 VCE = 2 V IC = 250 mA 2.7 V
IC = 300 mA 3
switching
II = 250 μA, IC = 100 mA 0.9 1.1
VCE(sat) Collector-emitter saturation voltage Figure 13 II = 350 μA, IC = 200 mA 1 1.3 V
II = 500 μA, IC = 350 mA 1.2 1.6
ICEX Collector cutoff current Figure 9 VCE = 50 V, II = 0 50 μA
VF Clamp forward voltage Figure 16 IF = 350 mA 1.7 2 V
II Input current Figure 12 VI = 3.85 V 0.93 1.35 mA
IR Clamp reverse current Figure 15 VR = 50 V 50 μA
Ci Input capacitance VI = 0, f = 1 MHz 15 25 pF
6.8 Electrical Characteristics: ULN2003AI

TA = –40°C to 105°C
ULN2003AI
PARAMETER TEST FIGURE TEST CONDITIONS UNIT
MIN TYP MAX
IC = 200 mA 2.7
VI(on) ON-state input voltage Figure 14 VCE = 2 V IC = 250 mA 2.9 V
IC = 300 mA 3
switching
II = 250 μA, IC = 100 mA 0.9 1.2
VCE(sat) Collector-emitter saturation voltage Figure 13 II = 350 μA, IC = 200 mA 1 1.4 V
II = 500 μA, IC = 350 mA 1.2 1.7
ICEX Collector cutoff current Figure 9 VCE = 50 V, II = 0 100 μA
VF Clamp forward voltage Figure 16 IF = 350 mA 1.7 2.2 V
II Input current Figure 12 VI = 3.85 V 0.93 1.35 mA
IR Clamp reverse current Figure 15 VR = 50 V 100 μA
Ci Input capacitance VI = 0, f = 1 MHz 15 25 pF

6.9 Electrical Characteristics: ULQ2003A and ULQ2004A

over recommended operating conditions (unless otherwise noted)
TEST ULQ2003A ULQ2004A
FIGURE MIN TYP MAX MIN TYP MAX
IC = 125 mA 5
IC = 200 mA 2.7 6
ON-state input IC = 250 mA 2.9
VI(on) Figure 14 VCE = 2 V V
voltage IC = 275 mA 7
IC = 300 mA 3
IC = 350 mA 8
High-level output
VOH voltage after Figure 18 VS = 50 V, IO = 300 mA VS – 50 VS – 50 mV
switching
II = 250 μA, IC = 100 mA 0.9 1.2 0.9 1.1
Collector-emitter
VCE(sat) Figure 13 II = 350 μA, IC = 200 mA 1 1.4 1 1.3 V
saturation voltage
II = 500 μA, IC = 350 mA 1.2 1.7 1.2 1.6
Figure 9 VCE = 50 V, II = 0 100 50
Collector cutoff
ICEX VCE = 50 V, II = 0 100 μA
current Figure 10 TA = 70°C
VI = 6 V 500
Clamp forward
VF Figure 16 IF = 350 mA 1.7 2.3 1.7 2 V
voltage
OFF-state input VCE = 50 V,
II(off) Figure 11 IC = 500 μA 65 50 65 μA
current TA = 70°C,
VI = 3.85 V 0.93 1.35
VI = 12 V 1 1.45
Clamp reverse VR = 50 V TA = 25°C 100 50
IR Figure 15 μA
current VR = 50 V 100 100
Ci Input capacitance VI = 0, f = 1 MHz 15 25 15 25 pF
6.10 Switching Characteristics: ULN2002A, ULN2003A, ULN2004A

TA = 25°C
ULN2002A, ULN2003A,
PARAMETER TEST CONDITIONS ULN2004A UNIT
MIN TYP MAX
tPLH Propagation delay time, low- to high-level output See Figure 17 0.25 1 μs
tPHL Propagation delay time, high- to low-level output See Figure 17 0.25 1 μs
6.11 Switching Characteristics: ULN2003AI

TA = 25°C
ULN2003AI
MIN TYP MAX
tPLH Propagation delay time, low- to high-level output See Figure 17 0.25 1 μs
tPHL Propagation delay time, high- to low-level output See Figure 17 0.25 1 μs

6.12 Switching Characteristics: ULN2003AI

TA = –40°C to 105°C
ULN2003AI
MIN TYP MAX
tPLH Propagation delay time, low- to high-level output See Figure 17 1 10 μs
tPHL Propagation delay time, high- to low-level output See Figure 17 1 10 μs
6.13 Switching Characteristics: ULQ2003A, ULQ2004A

over recommended operating conditions (unless otherwise noted)
ULQ2003A, ULQ2004A
MIN TYP MAX
tPLH Propagation delay time, low- to high-level output See Figure 17 1 10 μs
tPHL Propagation delay time, high- to low-level output See Figure 17 1 10 μs
6.14 Typical Characteristics
2.5 2.5
VCE(sat) - Collector-Emitter Saturation Voltage - V

VCE(sat) - Collector-Emitter Saturation Voltage - V
TA = 25°C TA = 25°C
II = 250 µA
2 2
II = 250 µA II = 350 µA
II = 350 µA
1.5 II = 500 µA 1.5
II = 500 µA
1 1
0.5 0.5
VCE(sat)
VCE(sat)
0 0
0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800
IC - Collector Current - mA IC(tot) - Total Collector Current - mA
Figure 1. Collector-Emitter Saturation Voltage Figure 2. Collector-Emitter Saturation Voltage

vs Collector Current (One Darlington) vs Total Collector Current (Two Darlingtons in Parallel)

Typical Characteristics (continued)

500 600
RL = 10 Ω
450
TA = 25°C
C - Maximum Collector Current - mA

500
400
IC - Collector Current - mA
VS = 10 V
350 N=1
400 N=4
VS = 8 V
300 N=3
250 300
N=2
200
N=6
200 N = 7
150
N=5
IC
100
100 TA = 70°C
IIC
50 N = Number of Outputs
Conducting Simultaneously
0 0
0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100
II - Input Current - µA Duty Cycle - %
Figure 3. Collector Current vs Input Current Figure 4. D Package Maximum Collector Current
vs Duty Cycle
600 2000
TJ = -40°C to 105°C
1800
C - Maximum Collector Current - mA
500
1600
N=2 N=1
N=3 1400
Input Current – µA
400
N=4
1200
300 N=5 1000 Maximum

N=6
800
N=7
200
600
400
100 TA = 85°C Typical
IIC
N = Number of Outputs 200

Conducting Simultaneously
0 0
0 10 20 30 40 50 60 70 80 90 100 2 2.5 3 3.5 4 4.5 5
Duty Cycle - % Input Voltage – V
Figure 5. N Package Maximum Collector Current Figure 6. Maximum and Typical Input Current
vs Duty Cycle vs Input Voltage
2.1 500
TJ = -40°C to 105°C V CE = 2 V
450 TJ = -40°C to 105°C
1.9
Maximum VCE(sat) Voltage – V
400
Output Current – mA
1.7
350
1.5 Maximum 300
250
1.3
Minimum
200
1.1
150
Typical
0.9 100
100 200 300 400 500 250 350 450 550 650
Output Current – mA Input Current – µA
Figure 7. Maximum and Typical Saturated VCE Figure 8. Minimum Output Current vs Input Current
vs Output Current

7 Parameter Measurement Information

Open VCE Open VCE
ICEX ICEX
Open VI
Figure 9. ICEX Test Circuit Figure 10. ICEX Test Circuit

Open VCE Open
II(off) IC II(on)
VI Open
Figure 11. II(off) Test Circuit Figure 12. II Test Circuit

II is fixed for measuring VCE(sat), variable for measuring hFE.
Open Open
IC
hFE =
II
II VCE IC VI(on) VCE IC
Figure 13. hFE, VCE(sat) Test Circuit Figure 14. VI(on) Test Circuit

Parameter Measurement Information (continued)

VR
IR VF IF
Open
Open
Figure 15. IR Test Circuit Figure 16. VF Test Circuit
Figure 17. Propagation Delay-Time Waveforms
200 W
≤5 ns ≤10 ns
VIH
Input 90% 90% (see Note C)
1.5 V 1.5 V
10% 10%
40 µs 0V
VOH
Output
VOL
VOLTAGE WAVEFORMS
The pulse generator has the following characteristics: PRR = 12.5 kHz, ZO = 50 Ω.
CL includes probe and jig capacitance.
For testing the ULN2003A device, ULN2003AI device, and ULQ2003A devices, VIH = 3 V; for the ULN2002A device,
VIH = 13 V; for the ULN2004A and the ULQ2004A devices, VIH = 8 V.
Figure 18. Latch-Up Test Circuit and Voltage Waveforms

8 Detailed Description
8.1 Overview
This standard device has proven ubiquity and versatility across a wide range of applications. This is due to
integration of 7 Darlington transistors of the device that are capable of sinking up to 500 mA and wide GPIO
range capability.
The ULN2003A device comprises seven high-voltage, high-current NPN Darlington transistor pairs. All units
feature a common emitter and open collector outputs. To maximize their effectiveness, these units contain
suppression diodes for inductive loads. The ULN2003A device has a series base resistor to each Darlington pair,
thus allowing operation directly with TTL or CMOS operating at supply voltages of 5 V or 3.3 V. The ULN2003A
device offers solutions to a great many interface needs, including solenoids, relays, lamps, small motors, and
LEDs. Applications requiring sink currents beyond the capability of a single output may be accommodated by
paralleling the outputs.
This device can operate over a wide temperature range (–40°C to 105°C).
8.2 Functional Block Diagrams

All resistor values shown are nominal. The collector-emitter diode is a parasitic structure and should not be used
to conduct current. If the collectors go below GND, an external Schottky diode should be added to clamp
negative undershoots.
COM
Output C
7V 10.5 NŸ
Input B
7.2 NŸ 3 NŸ E
Figure 19. ULN2002A Block Diagram
COM COM
RB Output C RB Output C
2.7 NŸ 10.5 NŸ
Input B Input B
7.2 NŸ 3 NŸ E 7.2 NŸ 3 NŸ E
Figure 20. ULN2003A, ULQ2003A and ULN2003AI Figure 21. ULN2004A and LQ2004A Block Diagram
Block Diagram

8.3 Feature Description

Each channel of the ULN2003A device consists of Darlington connected NPN transistors. This connection
creates the effect of a single transistor with a very high-current gain (β2). This can be as high as 10,000 A/A at
certain currents. The very high β allows for high-output current drive with a very low input current, essentially
equating to operation with low GPIO voltages.
The GPIO voltage is converted to base current through the 2.7-kΩ resistor connected between the input and
base of the predriver Darlington NPN. The 7.2-kΩ and 3-kΩ resistors connected between the base and emitter of
each respective NPN act as pulldowns and suppress the amount of leakage that may occur from the input.
The diodes connected between the output and COM pin is used to suppress the kick-back voltage from an
inductive load that is excited when the NPN drivers are turned off (stop sinking) and the stored energy in the
coils causes a reverse current to flow into the coil supply through the kick-back diode.
In normal operation the diodes on base and collector pins to emitter will be reversed biased. If these diodes are
forward biased, internal parasitic NPN transistors will draw (a nearly equal) current from other (nearby) device
pins.
8.4 Device Functional Modes

8.4.1 Inductive Load Drive
When the COM pin is tied to the coil supply voltage, ULN2003A device is able to drive inductive loads and
suppress the kick-back voltage through the internal free-wheeling diodes.
8.4.2 Resistive Load Drive

When driving a resistive load, a pullup resistor is needed in order for ULN2003A device to sink current and for
there to be a logic high level. The COM pin can be left floating for these applications.

9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information

Typically, the ULN2003A device drives a high-voltage or high-current (or both) peripheral from an MCU or logic
device that cannot tolerate these conditions. This design is a common application of ULN2003A device, driving
inductive loads. This includes motors, solenoids and relays. Figure 22 shows a model for each load type.
9.2 Typical Application
3.3-V Logic ULN2003A
IN1 OUT1
IN2 OUT2
3.3-V Logic IN3 OUT3
IN4 OUT4
VSUP
3.3-V Logic IN5 OUT5
IN6 OUT6
IN7 OUT7
GND COM VSUP
Figure 22. ULN2003A Device as Inductive Load Driver
9.2.1 Design Requirements

For this design example, use the parameters listed in Table 1 as the input parameters.
Table 1. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE
GPIO voltage 3.3 V or 5 V
Coil supply voltage 12 V to 48 V
Number of channels 7
Output current (RCOIL) 20 mA to 300 mA per channel
Duty cycle 100%

9.2.2 Detailed Design Procedure

When using ULN2003A device in a coil driving application, determine the following:
• Input voltage range
• Temperature range
• Output and drive current
• Power dissipation
9.2.2.1 Drive Current

The coil voltage (VSUP), coil resistance (RCOIL), and low-level output voltage (VCE(SAT) or VOL) determine the coil
current.
ICOIL = (VSUP – VCE(SAT)) / RCOIL (1)
9.2.2.2 Low-Level Output Voltage

The low-level output voltage (VOL) is the same as VCE(SAT) and can be determined by, Figure 1, Figure 2, or
Figure 7.
9.2.2.3 Power Dissipation and Temperature

The number of coils driven is dependent on the coil current and on-chip power dissipation. The number of coils
driven can be determined by Figure 4 or Figure 5.
For a more accurate determination of number of coils possible, use the below equation to calculate ULN2003A
device on-chip power dissipation PD:
N
PD = å VOLi ´ ILi
i=1
where
• N is the number of channels active together
• VOLi is the OUTi pin voltage for the load current ILi. This is the same as VCE(SAT) (2)
To ensure reliability of ULN2003A device and the system, the on-chip power dissipation must be lower that or
equal to the maximum allowable power dissipation (PD(MAX)) dictated by below equation Equation 3.
PD(MAX) =
(T J(MAX) - TA )
qJA
where
• TJ(max) is the target maximum junction temperature
• TA is the operating ambient temperature
• RθJA is the package junction to ambient thermal resistance (3)
Limit the die junction temperature of the ULN2003A device to less than 125°C. The IC junction temperature is
directly proportional to the on-chip power dissipation.

9.2.3 Application Curves

The characterization data shown in Figure 23 and Figure 24 were generated using the ULN2003A device driving
an OMRON G5NB relay and under the following conditions: VIN = 5 V, VSUP= 12 V, and RCOIL= 2.8 kΩ.
13 14
12
11 12
10
9 10
Output voltage - V
Output voltage - V
8
8
7
6
6
5
4 4
3
2 2
1
0 0
-0.004 0 0.004 0.008 0.012 0.016 -0.004 0 0.004 0.008 0.012 0.016
Time (s) D001
Time (s) D001
Figure 23. Output Response With Activation of Coil Figure 24. Output Response With De-activation of Coil
(Turnon) (Turnoff)

9.3 System Examples

VSS ULN2002A V
VCC ULQ2003A V
1 16 1 16
2 15 2 15
3 14
3 14
4 13
4 13
5 12
5 12
6 11
6 11 10
7
7 10 8 9
P-MOS
Output Lam
8 9 Test
TTL
Output
Figure 25. P-MOS to Load Figure 26. TTL to Load

ULN2004A
VDD ULQ2004A V VCC ULQ2003A V
1 16 1 16
2 15 2 15
3 14 3 14
RP
4 13 4 13
5 12 5 12
6 11 6 11
7 10 7 10
8 9 8 9
CMOS
Output
TTL
Output
Figure 27. Buffer for Higher Current Loads Figure 28. Use of Pullup Resistors to Increase
Drive Current

10 Power Supply Recommendations

This device does not need a power supply. However, the COM pin is typically tied to the system power supply.
When this is the case, it is very important to ensure that the output voltage does not heavily exceed the COM pin
voltage. This discrepancy heavily forward biases the fly-back diodes and causes a large current to flow into
COM, potentially damaging the on-chip metal or over-heating the device.
11 Layout
11.1 Layout Guidelines

Thin traces can be used on the input due to the low-current logic that is typically used to drive ULN2003A device.
Take care to separate the input channels as much as possible, as to eliminate crosstalk. TI recommends thick
traces for the output to drive whatever high currents that may be needed. Wire thickness can be determined by
the current density of the trace material and desired drive current.
Because all of the channels currents return to a common emitter, it is best to size that trace width to be very
wide. Some applications require up to 2.5 A.
11.2 Layout Example
1B 1 16 1C
2B 2 15 2C
3B 3 14 3C
4B 4 13 4C
5B 5 12 5C
6B 6 11 6C
7B 7 10 7C
E 8 9 VCOM
GND
Figure 29. Package Layout

12 Device and Documentation Support
12.1 Documentation Support

12.1.1 Related Documentation
For related documentation, see the following:
SN7546x Darlington Transistor Arrays, SLRS023
12.2 Related Links

The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 2. Related Links

TECHNICAL TOOLS & SUPPORT &
PARTS PRODUCT FOLDER SAMPLE & BUY
DOCUMENTS SOFTWARE COMMUNITY
ULN2002A Click here Click here Click here Click here Click here
ULN2003AI Click here Click here Click here Click here Click here
ULQ2003A Click here Click here Click here Click here Click here
ULQ2004A Click here Click here Click here Click here Click here
12.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser based versions of this data sheet, refer to the left hand navigation.

PACKAGE OPTION ADDENDUM
www.ti.com 26-Sep-2018
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
ULN2002AN ACTIVE PDIP N 16 25 Green (RoHS CU NIPDAU N / A for Pkg Type -20 to 70 ULN2002AN
& no Sb/Br)
ULN2002ANE4 ACTIVE PDIP N 16 25 Green (RoHS CU NIPDAU N / A for Pkg Type -20 to 70 ULN2002AN
& no Sb/Br)
ULN2003AD ACTIVE SOIC D 16 40 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2003A
& no Sb/Br)
ULN2003ADE4 ACTIVE SOIC D 16 40 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2003A
& no Sb/Br)
ULN2003ADR ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU | CU SN Level-1-260C-UNLIM -20 to 70 ULN2003A
& no Sb/Br)
ULN2003ADRE4 ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2003A
& no Sb/Br)
ULN2003ADRG3 ACTIVE SOIC D 16 2500 Green (RoHS CU SN Level-1-260C-UNLIM -20 to 70 ULN2003A
& no Sb/Br)
ULN2003ADRG4 ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2003A
& no Sb/Br)
ULN2003AID ACTIVE SOIC D 16 40 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 105 ULN2003AI
& no Sb/Br)
ULN2003AIDE4 ACTIVE SOIC D 16 40 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 105 ULN2003AI
& no Sb/Br)
ULN2003AIDG4 ACTIVE SOIC D 16 40 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 105 ULN2003AI
& no Sb/Br)
ULN2003AIDR ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU | CU SN Level-1-260C-UNLIM -40 to 105 ULN2003AI
& no Sb/Br)
ULN2003AIDRE4 ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 105 ULN2003AI
& no Sb/Br)
ULN2003AIDRG4 ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 105 ULN2003AI
& no Sb/Br)
ULN2003AIN ACTIVE PDIP N 16 25 Green (RoHS CU NIPDAU | CU SN N / A for Pkg Type -40 to 105 ULN2003AIN
& no Sb/Br)
ULN2003AINE4 ACTIVE PDIP N 16 25 Green (RoHS CU NIPDAU N / A for Pkg Type -40 to 105 ULN2003AIN
& no Sb/Br)
ULN2003AINSR ACTIVE SO NS 16 2000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 105 ULN2003AI
& no Sb/Br)
Addendum-Page 1
(1) Drawing Qty (2) (6) (3) (4/5)
ULN2003AIPW ACTIVE TSSOP PW 16 90 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 105 UN2003AI
& no Sb/Br)
ULN2003AIPWR ACTIVE TSSOP PW 16 2000 Green (RoHS CU NIPDAU | CU SN Level-1-260C-UNLIM -40 to 105 UN2003AI
& no Sb/Br)
ULN2003AIPWRG4 ACTIVE TSSOP PW 16 2000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 105 UN2003AI
& no Sb/Br)
ULN2003AN ACTIVE PDIP N 16 25 Green (RoHS CU NIPDAU | CU SN N / A for Pkg Type -20 to 70 ULN2003AN
& no Sb/Br)
& no Sb/Br)
ULN2003ANS ACTIVE SO NS 16 50 Green (RoHS CU NIPDAU Level-1-260C-UNLIM ULN2003A
& no Sb/Br)
ULN2003ANSR ACTIVE SO NS 16 2000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2003A
& no Sb/Br)
ULN2003ANSRE4 ACTIVE SO NS 16 2000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2003A
& no Sb/Br)
ULN2003ANSRG4 ACTIVE SO NS 16 2000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2003A
& no Sb/Br)
ULN2003APW ACTIVE TSSOP PW 16 90 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 UN2003A
& no Sb/Br)
ULN2003APWG4 ACTIVE TSSOP PW 16 90 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 UN2003A
& no Sb/Br)
ULN2003APWR ACTIVE TSSOP PW 16 2000 Green (RoHS CU NIPDAU | CU SN Level-1-260C-UNLIM -20 to 70 UN2003A
& no Sb/Br)
ULN2003APWRG4 ACTIVE TSSOP PW 16 2000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 UN2003A
& no Sb/Br)
ULN2004AD ACTIVE SOIC D 16 40 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2004A
& no Sb/Br)
ULN2004ADE4 ACTIVE SOIC D 16 40 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2004A
& no Sb/Br)
ULN2004ADG4 ACTIVE SOIC D 16 40 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2004A
& no Sb/Br)
ULN2004ADR ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU | CU SN Level-1-260C-UNLIM -20 to 70 ULN2004A
& no Sb/Br)
ULN2004ADRE4 ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2004A
& no Sb/Br)
Addendum-Page 2
(1) Drawing Qty (2) (6) (3) (4/5)
ULN2004ADRG4 ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2004A
& no Sb/Br)
ULN2004AN ACTIVE PDIP N 16 25 Green (RoHS CU NIPDAU N / A for Pkg Type -20 to 70 ULN2004AN
& no Sb/Br)
& no Sb/Br)
ULN2004ANSR ACTIVE SO NS 16 2000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -20 to 70 ULN2004A
& no Sb/Br)
ULQ2003AD ACTIVE SOIC D 16 40 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 85 ULQ2003A
& no Sb/Br)
ULQ2003ADG4 ACTIVE SOIC D 16 40 Green (RoHS CU NIPDAU Level-1-260C-UNLIM ULQ2003A
& no Sb/Br)
ULQ2003ADR ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 85 ULQ2003A
& no Sb/Br)
ULQ2003ADRG4 ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM ULQ2003A
& no Sb/Br)
ULQ2003AN ACTIVE PDIP N 16 25 Pb-Free CU NIPDAU N / A for Pkg Type -40 to 85 ULQ2003A
(RoHS)
ULQ2004AD ACTIVE SOIC D 16 40 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 85 ULQ2004A
& no Sb/Br)
ULQ2004ADG4 ACTIVE SOIC D 16 40 Green (RoHS CU NIPDAU Level-1-260C-UNLIM ULQ2004A
& no Sb/Br)
ULQ2004ADR ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 85 ULQ2004A
& no Sb/Br)
ULQ2004ADRG4 ACTIVE SOIC D 16 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM ULQ2004A
& no Sb/Br)
ULQ2004AN ACTIVE PDIP N 16 25 Pb-Free CU NIPDAU N / A for Pkg Type -40 to 85 ULQ2004AN
(RoHS)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 3
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF ULQ2003A, ULQ2004A :
• Automotive: ULQ2003A-Q1, ULQ2004A-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 4
PACKAGE MATERIALS INFORMATION
TAPE AND REEL INFORMATION
*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
ULN2003ADR SOIC D 16 2500 330.0 16.8 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003ADR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003ADR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003ADRG3 SOIC D 16 2500 330.0 16.8 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003ADRG4 SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003AIDR SOIC D 16 2500 330.0 16.8 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003AIDR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003AIDRG4 SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2003AIPWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
ULN2003AIPWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
ULN2003AIPWRG4 TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
ULN2003APWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
ULN2003APWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
ULN2003APWRG4 TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
ULN2004ADR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2004ADR SOIC D 16 2500 330.0 16.8 6.5 10.3 2.1 8.0 16.0 Q1
ULN2004ADR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULN2004ADRG4 SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
Pack Materials-Page 1
Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1

Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
ULN2004ADRG4 SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULQ2003ADR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
ULQ2003ADRG4 SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
ULN2003ADR SOIC D 16 2500 364.0 364.0 27.0
ULN2003ADR SOIC D 16 2500 367.0 367.0 38.0
ULN2003ADR SOIC D 16 2500 333.2 345.9 28.6
ULN2003ADRG3 SOIC D 16 2500 364.0 364.0 27.0
ULN2003ADRG4 SOIC D 16 2500 333.2 345.9 28.6
ULN2003AIDR SOIC D 16 2500 364.0 364.0 27.0
ULN2003AIDR SOIC D 16 2500 333.2 345.9 28.6
ULN2003AIDRG4 SOIC D 16 2500 333.2 345.9 28.6
ULN2003AIPWR TSSOP PW 16 2000 364.0 364.0 27.0
ULN2003AIPWR TSSOP PW 16 2000 367.0 367.0 35.0
ULN2003AIPWRG4 TSSOP PW 16 2000 367.0 367.0 35.0
ULN2003APWR TSSOP PW 16 2000 364.0 364.0 27.0
ULN2003APWR TSSOP PW 16 2000 367.0 367.0 35.0
ULN2003APWRG4 TSSOP PW 16 2000 367.0 367.0 35.0
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
ULN2004ADR SOIC D 16 2500 333.2 345.9 28.6
ULN2004ADR SOIC D 16 2500 364.0 364.0 27.0
ULN2004ADR SOIC D 16 2500 367.0 367.0 38.0
ULN2004ADRG4 SOIC D 16 2500 367.0 367.0 38.0
ULN2004ADRG4 SOIC D 16 2500 333.2 345.9 28.6
ULQ2003ADR SOIC D 16 2500 333.2 345.9 28.6
ULQ2003ADRG4 SOIC D 16 2500 367.0 367.0 38.0
PACKAGE OUTLINE
PW0016A SCALE 2.500
TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
SEATING
PLANE
6.6 C
TYP
A 6.2
0.1 C
PIN 1 INDEX AREA
14X 0.65
16
1
2X
5.1 4.55
4.9
NOTE 3
8
9
0.30
4.5 16X 1.2 MAX
B 0.19
4.3
NOTE 4 0.1 C A B
(0.15) TYP
SEE DETAIL A
0.25
GAGE PLANE
0.15
0.05
0.75
0.50
0 -8
DETAIL A
A 20
TYPICAL
4220204/A 02/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-153.
www.ti.com
EXAMPLE BOARD LAYOUT
PW0016A TSSOP - 1.2 mm max height
16X (1.5) SYMM

(R0.05) TYP
1
16X (0.45) 16
SYMM
14X (0.65)
8 9
(5.8)
LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN
SCALE: 10X
SOLDER MASK METAL UNDER SOLDER MASK

METAL SOLDER MASK OPENING
OPENING
EXPOSED METAL EXPOSED METAL
0.05 MAX 0.05 MIN

ALL AROUND ALL AROUND
NON-SOLDER MASK SOLDER MASK

DEFINED DEFINED
(PREFERRED) SOLDER MASK DETAILS
15.000
4220204/A 02/2017
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
PW0016A TSSOP - 1.2 mm max height
16X (1.5) SYMM

(R0.05) TYP
1
16X (0.45) 16
SYMM
14X (0.65)
8 9
(5.8)
SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL
SCALE: 10X
4220204/A 02/2017
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
permission to use these resources only for development of an application that uses the TI products described in the resource. Other
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third
party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims,
damages, costs, losses, and liabilities arising out of your use of these resources.
TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on
ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable
warranties or warranty disclaimers for TI products.
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2018, Texas Instruments Incorporated

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ULN2002A, ULN2003A, ULN2003AI

ULN200x, ULQ200x High-Voltage, High-Current Darlington Transistor Arrays

Changes from Revision N (June 2015) to Revision O Page

• Changed Pin Functions table to correct typographical error. ................................................................................................ 3

Changes from Revision M (February 2013) to Revision N Page

Changes from Revision L (April 2012) to Revision M Page

Changes from Revision K (August 2011) to Revision L Page

• Removed reference to obsolete ULN2001 device.................................................................................................................. 1

2 Submit Documentation Feedback Copyright © 1976–2016, Texas Instruments Incorporated

Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A

5 Pin Configuration and Functions

D, N, NS, and PW Package

(1) I = Input, O = Output

Copyright © 1976–2016, Texas Instruments Incorporated Submit Documentation Feedback 3

6.2 ESD Ratings

6.3 Recommended Operating Conditions

6.4 Thermal Information

4 Submit Documentation Feedback Copyright © 1976–2016, Texas Instruments Incorporated

Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A

6.5 Electrical Characteristics: ULN2002A

6.6 Electrical Characteristics: ULN2003A and ULN2004A

Copyright © 1976–2016, Texas Instruments Incorporated Submit Documentation Feedback 5

6.7 Electrical Characteristics: ULN2003AI

6.8 Electrical Characteristics: ULN2003AI

6 Submit Documentation Feedback Copyright © 1976–2016, Texas Instruments Incorporated

Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A

6.9 Electrical Characteristics: ULQ2003A and ULQ2004A

6.10 Switching Characteristics: ULN2002A, ULN2003A, ULN2004A

6.11 Switching Characteristics: ULN2003AI

Copyright © 1976–2016, Texas Instruments Incorporated Submit Documentation Feedback 7

6.12 Switching Characteristics: ULN2003AI

6.13 Switching Characteristics: ULQ2003A, ULQ2004A

6.14 Typical Characteristics

VCE(sat) - Collector-Emitter Saturation Voltage - V

Figure 1. Collector-Emitter Saturation Voltage Figure 2. Collector-Emitter Saturation Voltage

8 Submit Documentation Feedback Copyright © 1976–2016, Texas Instruments Incorporated

Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A

Typical Characteristics (continued)

C - Maximum Collector Current - mA

300 N=5 1000 Maximum

N = Number of Outputs 200

1.5 Maximum 300

Copyright © 1976–2016, Texas Instruments Incorporated Submit Documentation Feedback 9

7 Parameter Measurement Information

Figure 9. ICEX Test Circuit Figure 10. ICEX Test Circuit

Figure 11. II(off) Test Circuit Figure 12. II Test Circuit

II VCE IC VI(on) VCE IC

10 Submit Documentation Feedback Copyright © 1976–2016, Texas Instruments Incorporated

Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A

Parameter Measurement Information (continued)

Figure 15. IR Test Circuit Figure 16. VF Test Circuit

Figure 17. Propagation Delay-Time Waveforms

Figure 18. Latch-Up Test Circuit and Voltage Waveforms

Copyright © 1976–2016, Texas Instruments Incorporated Submit Documentation Feedback 11

8.2 Functional Block Diagrams

Figure 19. ULN2002A Block Diagram

12 Submit Documentation Feedback Copyright © 1976–2016, Texas Instruments Incorporated