Sample Investigatory Project
Sample Investigatory Project
Sample Investigatory Project
CO-ED SCHOOL
KOLAR ROAD BHOAPL
DEPARTMENT OF PHYSICS
PROJECT REPORT
INVESTIGATORY PROJECT ON
PN JUNCTION AND
DIODES
PROJECT REPORT
Submitted by
Govind Patel
RegisterationNo:
Submitted to
Mrs Ratna Hajela
in
DEPARTMENT OF PHYICS
MOTHER TERESA SR. SEC. CO-ED SCHOOL
BHOPAL
ACKNOWLEDGEMENT
In the accomplishment of this project
successfully, many people have best
owned upon me their blessings and the
heart pledged support, this time I am
utilizing to thank all the people who
have been concerned with project.
Primarily I would thank god for being
able to complete this project with
success. Then I would like to thank my
principal Mr. James MJ and physics
teacher Mrs Ratna hajela, whose
valuable guidance has been the ones
that helped me patch this project and
make it full proof success her
suggestions and her instructions has
served as the major contributor towards
the completion of the project. Then I
would like to thank my parents and
friends who have helped me with their
valuable suggestions and guidance has
been helpful in various phases of the
completion of the project. Last but not
the least I would like to thank my
classmates who have helped me a lot.
CERTIFICATE
• PN Junction
• Diode Equation
• Zener Diodes
Semiconductor: An
Introduction
• Conductors: Allow Electric
current to flow through them
Direction of
Current
DEPLETION LAYER FORMATION
Diode
where:
I = the net current flowing through the
diode;
I0 = "dark saturation current", the diode
leakage current density in the absence
of light;
V = applied voltage across the terminals
of the diode;
q = absolute value of electron charge;
k = Boltzmann's constant; and
T = absolute temperature (K).
Semiconductor diode -
opened region
The p-side is the cathode, the n-side is
the anode
The dropped voltage, VD is measured
from the cathode to the anode
Opened: VD VF:
VD = VF
ID = circuit limited, in our model the VD
cannot exceed VF
Semiconductor diode -
closed region
• Closed: VF < VD 0:
– VD is determined by the
circuit, ID = 0 mA
• Typical values of VF: 0.5 ¸ 0.7 V