Ellaine P.

De claro 5/12/18

Engr. Novalyn, Lapada,ECE EtronLec

ASSIGNMENT

Transistor is a semiconductor device which is used to amplify the signals as well as in switching
circuits. Generally transistor is made of solid material which contains three terminals such as
emitter (E), Base (B) and Collector (C) for connections with other components in the circuit. Some
transistors contains fourth terminal also i.e. substrate (S). Transistor is one of the active
components. From the time of first transistor invention to present days the transistors are
classified into different types depending on either construction or operation, they are explained
using tree diagram as below.

Transistor Tree Diagram

The transistors classification can be understood by observing the above tree diagram. Transistors
are basically classified into two types; they are Bipolar Junction Transistors (BJT) and Field Effect
Transistors (FET). The BJTs are again classified into NPN and PNP transistors. The FET
transistors are classified into JFET and MOSFET. Junction FET transistors are classified into N-
channel JFET and P-channel JFET depending on their function. MOSFET transistors are
classified into Depletion mode and Enhancement mode. Again depletion and enhancement mode
transistors are classified into N-channel JFET and P-channel.
Nowadays the vacuum tubes are replaced with transistors because the transistors have more
benefits over vacuum tubes. Transistors are small in size and it requires low voltage for operation
and also it has low power dissipation. Due to these reasons the transistor is used in many
applications such as amplifiers, switching circuits, oscillators and also in almost all electronic
circuits.

Types of Transistors

Transistor is the proper arrangement of different semiconductor materials. General

semiconductor materials used for transistor are silicon, germanium, and gallium-arsenide.
Basically the transistors are classified depending on their structure. Each type of transistors has
their own characteristics, advantages and disadvantages.

Some transistors are designed primarily for switching purpose, other side some are designed for
amplification purpose and some transistors are designed for both amplification and switching
purposes. Depending on the structure the transistors are classified into BJT and FET.

Junction Transistors

Junction transistor is generally called as Bipolar Junction Transistor (BJT). The BJT transistors
have three terminals named emitter (E), Base (B), Collector (C). The name itself indicates that it
has two junctions between p-type and n-type semiconductors. The BJT transistors are classified
in to NPN and PNP transistors depending on the construction.

Unlike FET transistors, the BJT transistors are current-controlled devices. If small amount of
current flows through the base of a BJT transistor then it causes to flow large current from emitter
to collector. The BJT transistors have low input impedance and it causes to flow large current
through the transistor. The BJT transistors are only the transistors which are turned ON by the
input current which is given to the base. Bipolar junction transistors can operate in three regions,
they are

 Cut-off Region: Here the transistor is in ‘OFF’ state i.e the current flowing through the
transistor is zero.
 Active Region: Here the transistor acts as an amplifier.
 Saturation Region: Here the transistor is in fully ‘ON’ state and also works as a closed
switch.

NPN Transistor

NPN is one of the two types of Bipolar Junction Transistors (BJT). The NPN transistor consists of
two n-type semiconductor materials and they are separated by a thin layer of p-type
semiconductor. Here the majority charge carriers are electrons and holes are the minority charge
carriers. The flowing of electrons from emitter to collector forms the current flow in the transistor
through the base terminal.

A small amount of current at base terminal causes to flow large amount current from emitter to
collector. Nowadays the generally used bipolar transistor is NPN transistor, because the mobility
of electrons is greater than mobility of holes. The standard equation for the currents flowing in the
transistor is

IE = IB + IC

The symbols and structure for NPN transistors are given below.

PNP Transistor

The PNP is another type of Bipolar Junction Transistors (BJT). The PNP transistors contain two
p-type semiconductor materials and are separated by a thin layer of n-type semiconductor. The
majority charge carriers in the PNP transistors are holes and electrons are minority charge
carriers. The arrow in the emitter terminal of transistor indicates the flow of conventional current.
In PNP transistor the current flows from Emitter to Collector.

The PNP transistor is ON when the base terminal is pulled to LOW with respect to emitter. The
symbol and structure for PNP transistor is shown below.

FET (Field Effect Transistor)

The Field-Effect-Transistor (FET) is another transistors type. Basically the FET transistors have
three terminals they are gate (G), Drain (D) and Source (S). FET transistors are classified into
Junction Field Effect transistors (JFET) and Insulated Gate FET (IG-FET) or MOSFET transistors.
For the connections in the circuit we also consider fourth terminal called base or substrate. The
FET transistors have control on the size and shape of a channel between source and drain which
is created by applied voltage. The FET transistors are uni-polar transistors because they perform
single channel operation where as BJT transistors are bipolar junction transistors. The FET
transistors have high current gain than BJT transistors.

JFET (Junction-Field Effect Transistor)

The Junction-Field-Effect transistor (JFET) is an earliest and simple type of FET transistors.
These JFETs are used as switches, amplifiers and resistors. This transistor is a voltage controlled
device. It doesn’t need any biasing current. The voltage applied between gate and source controls
the flow of electric current between source and drain of a transistor. The JFET transistors are
available in both N-channel and P-channel types.

N-Channel JFET

In N-channel JFET the current flow is due to the electrons. When voltage is applied between gate
and source, a channel is formed between source and drain for current flow. This channel is called
N-channel. Nowadays N-channel JFET transistor is most preferable type than P-channel JFET.
The symbols for N-channel JFET transistor are given below.

P-Channel JFET
In this JFET transistor the current flow is because of holes. The channel between source and
drain is called P-channel. The symbols for P-channel JFET transistors are given below. Here
arrow marks indicates the direction of current flow.

MOSFET

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is most useful type of among all
transistors. The name itself indicates that it contains metal gate terminal. The MOSFET has four
terminals drain, source, gate and body or substrate (B). MOSFET has many advantages over BJT
and JFET, mainly it offer high input impedance and low output impedance. It is used in low power
circuits mainly in chip designing technologies.

The MOSFET transistors are available in depletion and enhancement types. Further the depletion
and enhancement types are classified into N-channel and P-channel types.

N-Channel MOSFET

The MOSFET having N-channel region between source and drain is called N-channel MOSFET.
Here the source and gate terminals are heavily doped with n-type materials and substrate is
doped with p-type semiconductor material. Here the current flow between source and drain is
because of electrons. The gate voltage controls the current flow in the circuit. N-channel MOSFET
is most preferable than P-channel MOSFET because the mobility of electrons is high than mobility
of holes. The symbols for N-channel MOSFET transistors are given below.
P- Channel MOSFET

The MOSFET having P-channel region between source and drain is called as P-channel
MOSFET. Here the source and drain terminals are heavily doped with P-type material and the
substrate is doped with N-type material. The current flow between source and drain is because
of holes concentration. The applied voltage at gate will controls the flow of current through channel
region. The symbols for P-channel MOSFET transistors in depletion and enhancement types are
given below.
Transistors Based on Function

Transistors are also classified depending on the functions that mean what the transistors do.
Different types of transistors based on their function are explained below.

Small Signal Transistors

The basic function of small signal transistors is to amplify small signals even these transistors are
used for switching purpose. Small signal transistors are available in market in the form of NPN
and PNP transistors. We can see some value on the body of small signal transistor this value
indicates hFE of transistor.

Depending on this hFE value we can understand the capacity of transistor to amplify the signal.
The hFE values are present within the range of 10 to 500. The collector current value of these
transistors is 80 to 600mA. This type of transistors operates with the frequency range of 1 to
300MHz. The name of the transistor itself indicates that these transistors amplify small signals
which use small voltages and currents, such as few milli volts and milli amperes of current.

Small signal transistors are used in almost all types of electronic equipments and also these
transistors are used in several applications, some of them are ON or OFF switches for general
use, LED diode driver, Relay driver, Audio mute function, Timer circuits, Infrared diode amplifier,
Bias supply circuits etc.

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Small Switching Transistors

Small switching transistors are the transistors which are primarily used for switching after that
also used for amplification. Like small signal transistors, small switching transistors are also
available in the form of NPN and PNP and these type of transistors are also have hFE values.
The hFE value range for these transistors is from 10 to 200. At hFE value 200 the transistors are
not good amplifiers even though they act as better switches. The collector current values ranges
from 10 to 1000mA. These transistors are used mostly in switching applications.
Power Transistors

The transistors which are used in the high power amplifiers and power supplies are called as
“power amplifiers”. The collector terminal of this transistor is connected to the base of a metal
device and this structure acts as heat sink which dissipates excess power for the applications.

These types of transistors are available in the form of NPN, PNP and Darlington transistors. Here
the collector current values range from 1 to 100A. The operating frequency range from 1 to
100MHz. The power values of these transistors are range from 10 to 300W. The name of the
transistor itself indicates that the power transistors are used in the applications where high power,
high voltage and high current are required.

High Frequency Transistors

High frequency transistors are used for small signals which operate at high frequencies and these
are used in high speed switching applications. High frequency transistors are also called as RF
Transistors. These transistors have maximum frequency values of about 2000MHz. The collector
current (IC) value ranges from 10 to 600mA. These types of transistors are also available in the
form of NPN and PNP. These are mainly used in the applications of high frequency signals and
also this transistors must be ON or OFF at high speeds only. These transistors are used in HF,
VHF, UHF, CATV and MATV oscillator and amplifier circuits.

Photo Transistor

Photo transistors are the transistors which operate depending on the light that means these
transistors are light sensitive. The general photo transistor is nothing but a bipolar transistor which
contains light sensitive area instead of base terminal. The photo transistors have only 2 terminals
instead of general 3 terminals. The transistor operates depending on the light. When the light
sensitive area is dark then no current flows in transistor i.e. transistor is in OFF state.

When light sensitive area is exposed to light then a small amount of current generates at base
terminal and it causes to flow large current from collector to emitter. The photo transistors are
available in both BJT and FET transistor types. These are named as photo-BJTs and photo-FETs.

Unlike photo-BJTs, the photo-FETs are generating gate current by using light which controls the
current flow between drain and source terminals. Photo-FETs are more sensitive to light than
photo-BJTs. The symbols for photo-BJT and photo-FETs are shown above.

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Unijunction Transistors:
Unijunction transistors are used only as electrically controlled switches. These transistors do not
contain any amplification characteristics because of their design. These are generally three lead
transistors. Now we see the operation of unijunction transistor. If there is no potential difference
between emitter and any one of the base terminals (B1 or B2) then a small amount of current
flows between B1 and B2.

If sufficient amount of voltage is applied to the emitter terminal then high current generates at
emitter terminal and it adds to small current between B1 and B2, then it causes to flow large
current in the transistor. Here the emitter current is the primary current source for total current in
the transistor. The current between the terminals B1 and B2 is very small, due to this reason these
transistors are not suitable for amplification purpose.