BTW69 1200

BTW67 and BTW69 Series
STANDARD 50A SCRs
MAIN FEATURES:
Symbol Value Unit
IT(RMS) 50 A
V DRM/VRRM 600 to 1200 V
IGT 80 mA
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment, RD91
(BTW67) TOP3
high power motor control. (BTW69)
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V RMS), complying
with UL standards (file ref: E81734).
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current RD91 Tc = 70°C

(180° conduction angle) 50 A
TOP3 Ins. Tc = 75°C
IT(AV) Average on-state current RD91 Tc = 70°C
(180° conduction angle) 32 A
TOP3 Ins. Tc = 75°C
ITSM Non repetitive surge peak on-state current tp = 8.3 ms 610
Tj = 25°C A
tp = 10 ms 580
I ²t I²t Value for fusing Tj = 25°C 1680 A2 S

Critical rate of rise of on-state current IG =
dI/dt F = 60 Hz Tj = 125°C 50 A/µs
2 x IGT , tr ≤ 100 ns
IGM Peak gate current tp = 20 µs Tj = 125°C 8 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W
Tstg Storage junction temperature range - 40 to + 150

°C
Tj Operating junction temperature range - 40 to + 125
VRGM Maximum peak reverse gate voltage 5 V
April 2001 - Ed: 4 1/5
This datasheet has been downloaded from http://www.digchip.com at this page

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions Value Unit
IGT MIN. 8
mA
VD = 12 V RL = 33 Ω MAX. 80
VGT MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C MIN. 0.2 V
IH IT = 500 mA Gate open MAX. 150 mA
IL IG = 1.2 I GT MAX. 200 mA
dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs
VTM ITM = 100 A tp = 380 µs Tj = 25°C MAX. 1.9 V
Vt0 Threshold voltage Tj = 125°C MAX. 1.0 V
Rd Dynamic resistance Tj = 125°C MAX. 8.5 mΩ
IDRM Tj = 25°C MAX. 10 µA
VDRM = VRRM
IRRM Tj = 125°C 5 mA
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-c) Junction to case (DC) RD91 (Insulated) 1.0 °C/W
TOP3 Insulated 0.9
Rth(j-a) Junction to ambient TOP3 Insulated 50 °C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number Sensitivity Package
600 V 800 V 1200 V
BTW67-xxx X X X 80 mA RD91
BTW69-xxx X X X 80 mA TOP3 Ins.
ORDERING INFORMATION
OTHER INFORMATION
Part Number Marking Weight Base Quantity Packing mode
BTW67-xxx BTW67xxx 20.0 g 25 Bulk

BTW69-xxx BTW69xxx 4.5 g 120 Bulk
Note: xxx = voltage
2/5
Fig. 1: Maximum average power dissipation Fig. 2: Average and D.C. on-state current versus
versus average on-state current. case temperature.
Fig. 3: Relative variation of thermal impedance Fig. 4: Relative variation of gate trigger current,
versus pulse duration. holding current and latching current versus
junction temperature.
Fig. 5: Surge peak on-state current versus Fig. 6: Non-repetitive surge peak on-state
number of cycles. current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
3/5
Fig. 7: On-state characteristics (maximum

values).
PACKAGE MECHANICAL DATA

RD91 (Plastic)
DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.

A 40.00 1.575
A1 29.90 30.30 1.177 1.193
A2 22.00 0.867
B 27.00 1.063
B1 13.50 16.50 0.531 0.650
B2 24.00 0.945
C 14.00 0.551
C1 3.50 0.138
C2 1.95 3.00 0.077 0.118
E3 0.70 0.90 0.027 0.035
F 4.00 4.50 0.157 0.177
I 11.20 13.60 0.441 0.535
L1 3.10 3.50 0.122 0.138
L2 1.70 1.90 0.067 0.075
N1 33° 43° 33° 43°
N2 28° 38° 28° 38°
4/5
PACKAGE MECHANICAL DATA

TOP3 Ins.(Plastic)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of
STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication
supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as
critical components in life support devices or systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved

.
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http://www.st.com
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BTW67 and BTW69 Series

STANDARD 50A SCRs

Symbol Value Unit

V DRM/VRRM 600 to 1200 V

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

IT(RMS) RMS on-state current RD91 Tc = 70°C

I ²t I²t Value for fusing Tj = 25°C 1680 A2 S

IGM Peak gate current tp = 20 µs Tj = 125°C 8 A

PG(AV) Average gate power dissipation Tj = 125°C 1 W

Tstg Storage junction temperature range - 40 to + 150

VRGM Maximum peak reverse gate voltage 5 V

April 2001 - Ed: 4 1/5

This datasheet has been downloaded from http://www.digchip.com at this page

Part Number Marking Weight Base Quantity Packing mode

BTW67-xxx BTW67xxx 20.0 g 25 Bulk

Note: xxx = voltage

Fig. 7: On-state characteristics (maximum

PACKAGE MECHANICAL DATA

REF. Millimeters Inches

Min. Max. Min. Max.

PACKAGE MECHANICAL DATA

© The ST logo is a registered trademark of STMicroelectronics

© 2001 STMicroelectronics - Printed in Italy - All rights reserved

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