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Electrical Characteristics of MOS Devices: V + "Metal" Oxide V +

The document summarizes key concepts about MOS devices: 1) It describes the different operating modes of a MOS capacitor - accumulation, flatband, and depletion - and how the charge distribution within the device changes with the applied gate voltage. 2) It explains key voltage terms for a MOS capacitor, such as threshold voltage, flatband voltage, oxide voltage, and silicon voltage and how they relate to one another and the applied gate bias. 3) It discusses how the work function of different metal and semiconductor materials determines the flatband voltage of the MOS structure.

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0% found this document useful (0 votes)
282 views36 pages

Electrical Characteristics of MOS Devices: V + "Metal" Oxide V +

The document summarizes key concepts about MOS devices: 1) It describes the different operating modes of a MOS capacitor - accumulation, flatband, and depletion - and how the charge distribution within the device changes with the applied gate voltage. 2) It explains key voltage terms for a MOS capacitor, such as threshold voltage, flatband voltage, oxide voltage, and silicon voltage and how they relate to one another and the applied gate bias. 3) It discusses how the work function of different metal and semiconductor materials determines the flatband voltage of the MOS structure.

Uploaded by

mohandoss
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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EE143 F2010 Lecture 22

Electrical Characteristics of MOS Devices


VG
+
• The MOS Capacitor
“metal”
– Voltage components x ox oxide

– Accumulation, Depletion, Inversion Modes semiconductor

– Effect of channel bias and substrate bias


– Effect of gate oxide charges
– Threshold-voltage adjustment by implantation
– Capacitance vs. voltage characteristics
• MOS Field-Effect Transistor
– I-V characteristics
– Parameter extraction

Professor N Cheung, U.C. Berkeley 1


EE143 F2010 Lecture 22

1) Reading Assignment
Streetman: Section of Streetman Chap 8 on MOS

2) Visit the Device Visualization Website


http://jas.eng.buffalo.edu/
and run the visualization experiments of

1) Charge carriers and Fermi level,


2) pn junctions
3) MOS capacitors
4) MOSFETs

Professor N Cheung, U.C. Berkeley 2


EE143 F2010 Lecture 22

Work Function of Materials

METAL SEMICONDUCTOR
Eo Vacuum
energy level
Eo
Work function
= q
q EC
Ef
Ef
EV
qM is determined qS is determined
by the metal material by the semiconductor material,
the dopant type,
and doping concentration
Professor N Cheung, U.C. Berkeley 3
EE143 F2010 Lecture 22

Work Function (qM) of MOS Gate Materials

Eo = vacuum energy level Ef = Fermi level


EC = bottom of conduction band EV = top of conduction
band
q = 4.15eV (electron affinity)

Eo Eo Eo

qM q = 4.15eV q = 4.15eV


qM Ef EC EC
0.56eV 0.56eV
Ef qM
Ei Ei
Examples:
Al = 4.1 eV 0.56eV 0.56eV
Ef
TiSi2 = 4.6 eV EV EV
n+ poly-Si p+ poly-Si
(Ef = EC) (Ef = EV)
Professor N Cheung, U.C. Berkeley 4
EE143 F2010 Lecture 22

Work Function of doped Si substrate


kT  N B 
* Depends on substrate concentration NB F  ln 
q  ni 
Eo Eo
qs q = 4.15eV q = 4.15eV
EC EC
0.56eV qs 0.56eV
Ef
|qF|
Ei Ei
|qF|
0.56eV Ef
0.56eV
EV EV
n-type Si p-type Si

s (volts) = 4.15 +0.56 - |F| s (volts) = 4.15 +0.56 + |F|


Professor N Cheung, U.C. Berkeley 5
EE143 F2010 Lecture 22

The MOS Capacitor


VG
+
+
_ VFB
“metal” +
xox oxide _ Vox (depends on VG)
+
_ Vsi (depends on VG)

semiconductor

VG  VFB  Vox  VSi  ox


C ox  [in Farads /cm2]
xox
Oxide capacitance/unit area
Professor N Cheung, U.C. Berkeley 6
EE143 F2010 Lecture 22

Flat Band Voltage

• VFB is the “built-in” voltage of the MOS:


VFB   M   S
• Gate work function M:
Al: 4.1 V; n+ poly-Si: 4.15 V; p+ poly-Si: 5.27 V
• Semiconductor work function S :

s (volts) = 4.15 +0.56 - |F| for n-Si


 s (volts) = 4.15 +0.56 + |F| for p-Si

• Vox = voltage drop across oxide (depends on VG)


• VSi = voltage drop in the silicon (depends on VG)

Professor N Cheung, U.C. Berkeley 7


EE143 F2010 Lecture 22

MOS Operation Modes

A) Accumulation: VG < VFB for p-type substrate

M O Si (p-Si)
holes
Charge Distribution
Thickness of accumulation layer ~0

VSi  0, so Vox = VG - VFB


QSi’ = charge/unit area in Si
=Cox (VG - VFB )
Professor N Cheung, U.C. Berkeley 8
EE143 F2010 Lecture 22

MOS Operation Modes

• B) Flatband Condition : VG = VFB

No charge in Si (and hence no charge in metal gate)

• VSi = Vox = 0
M O S (p-Si)

Charge Distribution

Professor N Cheung, U.C. Berkeley 9


EE143 F2010 Lecture 22

MOS Operation Modes (cont.)

C) Depletion: VG > VFB


Charge Distribution

M O S (p-Si)
Depletion
2Si VSi
Layer xd  xd

thickness
qN B
qNB

2
qN Bx d qN Bx d
VG  VFB   Depletion layer
Cox 2s
Note: NBxd is the total (For given VG, can solve for xd)
charge in Si /unit area Vox VSi
Professor N Cheung, U.C. Berkeley 10
EE143 F2010 Lecture 22

Depletion Mode :Charge and Electric Field Distributions


by Superposition Principle of Electrostatics
 (x)  (x)  (x)
Q' Q' Q'
M etal Oxide Semiconductor M etal Oxide Semiconductor M etal Semiconductor
Oxide
x=xo + x x=xo + x
d x x d x

 - Q' 
x=0 x=xo x=0 x=xo x=0 x=xo

E(x) E (x) E(x)


Metal Oxide Semiconductor Metal Oxide Semiconductor Metal Oxide Semiconductor

=
x=xo + x
x
x=x + x
x
+ x
o d x=x + x
d o d

x=0 x=xo x=0 x=x x=0 x=x


o o

Professor N Cheung, U.C. Berkeley 11


EE143 F2010 Lecture 22

MOS Operation Modes (cont.)

D) Threshold of Inversion: VG = VT This is a definition


for onset of
nsurface = NB (for p-type substrate)
strong inversion
=> VSi = 2|F| M O S (p-Si)

xdmax

qNB
Q’n

2 s ( 2  F )qN B
VG  VT  VFB   2 F
C ox
Professor N Cheung, U.C. Berkeley 12
EE143 F2010 Lecture 22

MOS Operation Modes (cont.)

E) Strong Inversion: VG > VT


xdmax is approximately unchanged
when VG> VT
4 Si  F
xd max 
qN B M O S (p-Si)

xdmax

qNa
qN B xd max  Qn
Vox 
C ox Q’n
Qn  C ox (VG  VT ) electrons

Professor N Cheung, U.C. Berkeley 13


EE143 F2010 Lecture 22

Professor N Cheung, U.C. Berkeley 14


EE143 F2010 Lecture 22

Professor N Cheung, U.C. Berkeley 15


EE143 F2010 Lecture 22

p-Si

Professor N Cheung, U.C. Berkeley 16


EE143 F2010 Lecture 22

Voltage drop = area under E-field curve


Vox = Qa/Cox
Accumulation VSi ~ 0

Vox =qNaxd/Cox

Depletion VSi = qNaxd2/(2s)

Vox = [qNaxdmax+Qn]/Cox

VSi = qNaxdmax2/(2s)
Inversion = 2|F|

* For simplicity, dielectric constants assumed to be same for oxide and Si in E-field sketches
Professor N Cheung, U.C. Berkeley 17
EE143 F2010 Lecture 22

Suggested Exercise

Most derivations for MOS shown in lecture notes


are done with p-type substrate (NMOS)
as example.

Repeat the derivations yourself for n-type substrate


(PMOS) to test your understanding of MOS.

Professor N Cheung, U.C. Berkeley 18


EE143 F2010 Lecture 22

p-Si substrate (NMOS)


Accumulation strong inversion
(holes) depletion (electrons) VG
(more
positive)
VFB VT

n-Si substrate (PMOS)

Strong inversion Accumulation


(holes) depletion (electrons)
VG
(more
negative)
VT VFB

Professor N Cheung, U.C. Berkeley 19


EE143 F2010 Lecture 22

Professor N Cheung, U.C. Berkeley 20


EE143 F2010 Lecture 22

Professor N Cheung, U.C. Berkeley 21


EE143 F2010 Lecture 22

Professor N Cheung, U.C. Berkeley 22


EE143 F2010 Lecture 22

Professor N Cheung, U.C. Berkeley 23


EE143 F2010 Lecture 22

Professor N Cheung, U.C. Berkeley 24


EE143 F2010 Lecture 22

C-V Characteristic
C/Cox C/Cox
a e e a
1 1
b b
p-type n-type
substrate c substrate
c

d d
VG VG
VT VT

a) accumulation: Cox
b) flatband: ~Cox (actually a bit less)
c) depletion: Cox in series with the Cdepl
d) threshold: Cox in series with the minimum Cdepl
e) inversion: Cox (with some time delay!)
Professor N Cheung, U.C. Berkeley 25
EE143 F2010 Lecture 22

Small signal charge response Q due to VG

Q
Q
All frequencies
Accumulation
C = Cox

Q
Q All frequencies
Depletion
1/C = 1/Cox + xd/s

Q Q Q

Q
Inversion

Low frequency High frequency


C = Cox 1/C = 1/Cox + xdmax/s
Professor N Cheung, U.C. Berkeley 26
EE143 F2010 Lecture 22

Effect of Substrate Bias VB and Channel Bias VC

VG
VC
M
O
inversion
electrons n+
n+

depletion
region p-Si

VB

VG  VB   VFB  Vox  VSi

net bias across MOS


Professor N Cheung, U.C. Berkeley 27
EE143 F2010 Lecture 22

At the onset of strong inversion, where VG is defined


as the threshold voltage
M O Si
Ei
qp
Efs
q(VC-VB)
qp Efn 2
1 qN a X
VSi 
d max

2 s
VSi  2  p  VC  VB 
2
VG  VB   VFB  qN a X d max 1 qN a X d max

C OX 2 s
Professor N Cheung, U.C. Berkeley 28
EE143 F2010 Lecture 22

At threshold: VG – VB = VFB+Vox+VSi
But VSi = 2|p| + (VC - VB ) =>
xdmax is different from no-bias case

2 SiVSi
xd max 
qN B

2sqNB(2|F| + VC-VB)
VT -VB = VFB + + 2|F| + VC - VB
Cox

Vox VSi
Professor N Cheung, U.C. Berkeley 29
EE143 F2010 Lecture 22

Flat Band Voltage with Oxide charges


VFB is the Gate voltage required to create no charge in the Si

1 x ox ( x)
xox
Qf
VFB   M   S   
Cox Cox 0 xox
dx

ox (x)
Qf

S
ox (x) due to alkaline
M O
contaminants or trapped
x=0 x = xox charge
Qf due to broken bonds
at
Professor N Cheung, U.C. Berkeley 30
EE143 F2010 Lecture 22

VT Tailoring with Ion Implantation

Qi
VT 
COX

Qi = q  implant dose in Si Shallow implanted


dopant profile at Si-SiO2

Nsub interface (approximated as


a delta function)

• Acceptor implant gives positive shift (+ VT)


• Donor implant gives negative shift - VT
Algebraic sign of VT shift is independent of n or p substrate !

Professor N Cheung, U.C. Berkeley 31


EE143 F2010 Lecture 22

The delta-function approximation of implanted profile

* Valid if thickness of implanted dopants << xdmax

implanted acceptors SiO2 p-Si

SiO2 xdmax
Na
Qd
p-Si

Qn
Doping Profile After Implantation
Qd (due to implanted acceptors)

Charge Distribution for V G > VT

The VT shift can be viewed as the extra gate voltage nee


deplete the implanted dopants ~ Qi/Cox
Professor N Cheung, U.C. Berkeley 32
EE143 F2010 Lecture 22

Summary : Parameters Affecting VT

1 M
6  OX & Q f
2 xox

Qn VC
n+ n+
Na 5
3

4 VB

7 Dopant implant near Si/SiO2 interface

Professor N Cheung, U.C. Berkeley 33


EE143 F2010 Lecture 22

M increases

|VCB| increases

B threshold implant
Xox increases

Xox increases
As or P threshold implant

|VCB| increases
+ Qf or Qox M decreases

Professor N Cheung, U.C. Berkeley 34


EE143 F2010 Lecture 22

Summary of MOS Threshold Voltage (NMOS, p-substrate)

• Threshold voltage of MOS capacitor:


2sqNB(2|F|) Qi
VT = VFB + + 2|F| -
Cox Cox

• Threshold voltage of MOS transistor:


2sqNB(2|F| + |VC-VB|) Qi
VT = VFB + + 2|F| + VC -
Cox Cox
Note 1: At the onset of strong inversion, inversion charge is negligible
and is often ignored in the VT expression
Note 2: VT of a MOSFET is taken as the VT value at source ( i.e., VC =VS)
Note 3 : Qi = (q  implant dose ) is the charge due to the ionized donors
or acceptors implanted at the Si surface. Qi is negative for acceptors
and is positive for donors
Professor N Cheung, U.C. Berkeley 35
EE143 F2010 Lecture 22

Summary of MOS Threshold Voltage (PMOS, n-substrate)

• Threshold voltage of MOS capacitor:


2sqNB(2|F|) Qi
VT = VFB - - 2|F| -
Cox Cox

• Threshold voltage of MOS transistor:

2sqNB(2|F| + |VC-VB|) Qi
VT = VFB - - 2|F| + VC -
Cox Cox

* Yes, + sign for VC term but VC (<0) is a negative bias for PMOS because the
inversion holes have to be negatively biased with respect to the n-substrate
to create a reverse biased pn junction.

Professor N Cheung, U.C. Berkeley 36

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