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    This document summarizes research on preparing alumina (Al2O3) thin films from liquid phase deposition and characterizing the resulting films. An alumina precursor solution was prepared using an advanced sol-gel process and spun to form thin films. Films were annealed at different temperatures from 700-1000°C. X-ray diffraction showed the films crystallized into alpha-Al2O3 from 700-800°C and a mixture of alpha- and gamma-Al2O3 formed at 1000°C. Doping with cobalt or iron caused a peak shift indicating a solid solution formed. The films were transparent and 30nm grains were observed after annealing at 1000°C. The sol-gel method produced high quality al

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    This document summarizes research on preparing alumina (Al2O3) thin films from liquid phase deposition and characterizing the resulting films. An alumina precursor solution was prepared using an advanced sol-gel process and spun to form thin films. Films were annealed at different temperatures from 700-1000°C. X-ray diffraction showed the films crystallized into alpha-Al2O3 from 700-800°C and a mixture of alpha- and gamma-Al2O3 formed at 1000°C. Doping with cobalt or iron caused a peak shift indicating a solid solution formed. The films were transparent and 30nm grains were observed after annealing at 1000°C. The sol-gel method produced high quality al

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    Preparation and Characterization of Al2O3 Thin film

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    This document summarizes research on preparing alumina (Al2O3) thin films from liquid phase deposition and characterizing the resulting films. An alumina precursor solution was prepared using an advanced sol-gel process and spun to form thin films. Films were annealed at different temperatures from 700-1000°C. X-ray diffraction showed the films crystallized into alpha-Al2O3 from 700-800°C and a mixture of alpha- and gamma-Al2O3 formed at 1000°C. Doping with cobalt or iron caused a peak shift indicating a solid solution formed. The films were transparent and 30nm grains were observed after annealing at 1000°C. The sol-gel method produced high quality al

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    © All Rights Reserved
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    35 views1 page

    Check Your English Vocabulary-ToEFL

    Uploaded by

    mirelamanteamirela
    This document summarizes research on preparing alumina (Al2O3) thin films from liquid phase deposition and characterizing the resulting films. An alumina precursor solution was prepared using an advanced sol-gel process and spun to form thin films. Films were annealed at different temperatures from 700-1000°C. X-ray diffraction showed the films crystallized into alpha-Al2O3 from 700-800°C and a mixture of alpha- and gamma-Al2O3 formed at 1000°C. Doping with cobalt or iron caused a peak shift indicating a solid solution formed. The films were transparent and 30nm grains were observed after annealing at 1000°C. The sol-gel method produced high quality al

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    of 1

    Preparation and Characterization of Al2O3 Thin

    Films from Liquid Phase.


    Yoshifumi Horita, Tadataka Yasuda, Seichi Rengakuji,
    *Yuuko Nakamura
    Department of System Engineering of Materials and Life
    Science,Faculty of Engineering, Toyama Univ.,*Center
    for Institute Analysis, Toyama Univ.,
    3190 Gofuku, Toyama-city, Toyama, 930-8555 Japan

    Introduction
    Al2O3 thin films are known as a material having
    excellent properties such as heat resistance, corrosion
    resistance, and friction resistance, etc. Various methods
    for preparing thin film, e.g. ion plating, sputtering, sol-gel
    method, have been carried out. Preparation of thin film by
    sol-gel method has attractive features, such as its
    simplicity, and the fact the process doesn’t need
    expensive equipment.
    In this experiment, we prepared the Al2O3 precursor
    solution using the advanced sol-gel process and made a
    Al2O3 thin film. To make hard-coating films, trials of
    doping Co or Fe to Al2O3 were performed.
    Fig1X-ray diffraction patterns of powder annealed at
    various temperatures
    Experiment
    The Al2O3 precursor solution was prepared as below:
    First, aluminum butoxide was prepared by reacting AlCl3
    with butanol in toluene solvent, then reacting it with water
    dissolved in butanol so that hydrolysis and polymerization
    reaction occurred. The Al2O3 precursor solution was
    condensed and diluted to 1mol/l. To make a harder film,
    Co or Fe, which was supplied by CoCl2 or FeCl3 dissolved
    in butanol, was added to Al2O3 precursor solution. This
    was dried under an IR lamp, and then the powdered
    product was heat-treated at several temperatures. The
    structures of powders were measured by XRD.
    The thin film was coated by dipping on glass or quartz
    substrate. After drying the film under IR lamp and then
    heat-treatment, the transmittance of the thin films was
    measured by UV-vis. Surface roughness and morphology
    of films were measured by AFM and FE-SEM.

    Results and Discussion


    XRD patterns of Al2O3 after heat-treatment are shown
    in Fig.1. At about 700 to 800oC, - Al2O3 structures
    

    appeared. At about 1000 , a mixture of g - Al2O3 and -


      

    Al2O3 structurntified. XRD result of 3-atom % Co doped Fig2 X-ray diffraction patterns of powder annealed at
    to Al2O3 thin filmes can be ide is shown Fig.2. The XRD various temperatures (Co doped)
    peak of - Al2O3 crystallized at 1000oC shifted to a lower
    

    angle. This peak shift is thought to be the formation of


    solid solution. Al2O3 and Co or Fe doped films obtained
    from precursor solution are transparent. The presence of
    dissolved Co or Fe ion in Al2O3 is detected by UV-vis
    spectra. From surface morphology in Fig.3, the grains
    grow to about 30nm in diameter at 1000oC. X-ray
    intensity becomes greater at higher temperature. AFM
    image also shows the same trend.
    Preparation of Al2O3 thin film is very easy by this method.
    Moreover, the doping process is a very simple step, that
    of mixing the material to Al2O3 precursor solution.

    Fig.3. SEM image of Al2O3 thin film.

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