BUH 100 - Motorola

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SEMICONDUCTOR TECHNICAL DATA



POWER TRANSISTOR
10 AMPERES
700 VOLTS

100 WATTS
The BUH100 has an application specific state–of–art die designed for use in
100 Watts Halogen electronic transformers.
This power transistor is specifically designed to sustain the large inrush current
during either the start–up conditions or under a short circuit across the load.
This High voltage/High speed product exhibits the following main features:
• Improved Efficiency Due to the Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
• Robustness Thanks to the Technology Developed to Manufacture
this Device
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible
Parametric Distributions
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CASE 221A–06
TO–220AB
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Sustaining Voltage VCEO 400 Vdc
Collector–Base Breakdown Voltage VCBO 700 Vdc
Collector–Emitter Breakdown Voltage VCES 700 Vdc
Emitter–Base Voltage VEBO 10 Vdc
Collector Current — Continuous IC 10 Adc
— Peak (1) ICM 20
Base Current — Continuous IB 4 Adc
Base Current — Peak (1) IBM 10
*Total Device Dissipation @ TC = 25_C PD 100 Watt
*Derate above 25°C 0.8 W/_C
Operating and Storage Temperature TJ, Tstg – 65 to 150 _C
THERMAL CHARACTERISTICS
Thermal Resistance _C/W
— Junction to Case RθJC 1.25
— Junction to Ambient RθJA 62.5
Maximum Lead Temperature for Soldering Purposes: TL 260 _C
1/8″ from case for 5 seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BUH100
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage VCEO(sus) 400 460 Vdc
(IC = 100 mA, L = 25 mH)
Collector–Base Breakdown Voltage VCBO 700 860 Vdc
(ICBO = 1 mA)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Breakdown Voltage VEBO 10 12.5 Vdc
(IEBO = 1 mA)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICEO 100 µAdc
(VCE = Rated VCEO, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current @ TC = 25°C ICES 100 µAdc
(VCE = Rated VCES, VEB = 0) @ TC = 125°C 1000
Collector Base Current @ TC = 25°C ICBO 100 µAdc
(VCB = Rated VCBO, VEB = 0) @ TC = 125°C 1000
µAdc
Emitter–Cutoff Current IEBO 100
(VEB = 9 Vdc, IC = 0)
ON CHARACTERISTICS
Base–Emitter Saturation Voltage @ TC = 25°C VBE(sat) 1 1.1 Vdc
(IC = 5 Adc, IB = 1 Adc)
Collector–Emitter Saturation Voltage @ TC = 25°C VCE(sat) 0.37 0.6 Vdc
(IC = 5 Adc, IB = 1 Adc) @ TC = 125°C 0.37 0.6
(IC = 7 Adc, IB = 1.5 Adc) @ TC = 25°C 0.5 0.75 Vdc
@ TC = 125°C 0.6 1.5
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc) @ TC = 25°C hFE 15 24
—
@ TC = 125°C 16 28
DC Current Gain (IC = 5 Adc, VCE = 5 Vdc) @ TC = 25°C 10 15 —
@ TC = 125°C 10 14.5
DC Current Gain (IC = 7 Adc, VCE = 5 Vdc) @ TC = 25°C 8 12 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
@ TC = 125°C 7 10.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (IC = 10 Adc, VCE = 5 Vdc) @ TC = 25°C 6 9.5 —
@ TC = 125°C 4 8
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation IC = 5 Adc, IB1 = 1 Adc @ TC = 25°C VCE(dsat) 1.1 V
Voltage: VCC = 300 V
Determined 3 µs after @ TC = 125°C 2.1 V
rising IB1 reaches
IC = 7.5 Adc, IB1 = 1.5 Adc @ TC = 25°C 1.7 V
90% of final IB1
(See Figure 19) VCC = 300 V @ TC = 125°C 5 V
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth fT 23 MHz
(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance Cob 100 150 pF
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Input Capacitance Cib 1300 1750 pF
(VEB = 8 Vdc, f = 1 MHz)
2 Motorola Bipolar Power Transistor Device Data

BUH100
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)
Turn–on Time @ TC = 25°C ton 130 200 ns
IC = 1 Adc, IB1 = 0.2 Adc @ TC = 125°C 140
IB2 = 0.2 Adc
Turn–off Time VCC = 300 Vdc @ TC = 25°C toff 6.8 8 µs
@ TC = 125°C 8.5
IC = 1 Adc, IB1 = 0.2 Adc @ TC = 125°C 150
IB2 = 0.4 Adc
Turn–off Time @ TC = 25°C toff 3.4 4 µs
VCC = 300 Vdc
@ TC = 125°C 4.3
IC = 5 Adc, IB1 = 1 Adc @ TC = 125°C 800
IB2 = 1 Adc
Turn–off Time VCC = 300 Vdc @ TC = 25°C toff 2.9 3.5 µs
@ TC = 125°C 3.6
IC = 7.5 Adc, IB1 = 1.5 Adc @ TC = 125°C 900
IB2 = 1.5 Adc
Turn–off Time VCC = 300 Vdc @ TC = 25°C toff 2.1 2.5 µs
@ TC = 125°C 2.5
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)
Fall Time @ TC = 25°C tfi 150 250 ns
@ TC = 125°C 180
IC = 1 Adc
µs
Storage Time @ TC = 25°C tsi 5.1 6
IB1 = 0.2 Adc
@ TC = 125°C 5.8
IB2 = 0.2 Adc
Crossover Time @ TC = 25°C tc 230 325 ns
@ TC = 125°C 300
@ TC = 125°C 170
IC = 1 Adc
µs
Storage Time @ TC = 25°C tsi 2.5 3
IB1 = 0.2 Adc
@ TC = 125°C 2.8
IB2 = 0.5 Adc
@ TC = 125°C 300
@ TC = 125°C 140
IC = 5 Adc
Storage Time @ TC = 25°C tsi 2.9 3.5 µs
IB1 = 1 Adc
@ TC = 125°C 4.6
IB2 = 1 Adc
@ TC = 125°C 450
@ TC = 125°C 150
IC = 7.5 Adc
Storage Time @ TC = 25°C tsi 2 2.5 µs
IB1 = 1.5 Adc
@ TC = 125°C 2.5
IB2 = 1.5 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 125°C 475
Motorola Bipolar Power Transistor Device Data 3

BUH100
TYPICAL STATIC CHARACTERISTICS
100 100
VCE = 1 V VCE = 3 V
TJ = 125°C TJ = 125°C
hFE , DC CURRENT GAIN

TJ = – 20°C TJ = – 20°C
10 TJ = 25°C 10 TJ = 25°C
1 1
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 3 Volt
100 10
VCE = 5 V IC/IB = 5
TJ = 125°C
VCE , VOLTAGE (VOLTS)

1
TJ = – 20°C
10 TJ = 25°C TJ = – 20°C
TJ = 25°C
0.1
TJ = 125°C
1 0.01
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10
Figure 3. DC Current Gain @ 5 Volt Figure 4. Collector–Emitter Saturation Voltage
10 1.5
IC/IB = 10 IC/IB = 5
VBE , VOLTAGE (VOLTS)
1 1
TJ = 25°C TJ = – 20°C TJ = – 20°C
TJ = 25°C
0.1 TJ = 125°C 0.5
TJ = 125°C
0.01 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
Figure 5. Collector–Emitter Saturation Voltage Figure 6. Base–Emitter Saturation Region

BUH100
TYPICAL STATIC CHARACTERISTICS
1.5 2
IC/IB = 10 TJ = 25°C 15 A
10 A
1.5
VBE , VOLTAGE (VOLTS)

1 8A
TJ = – 20°C 5A
1
TJ = 25°C 3A
0.5
TJ = 125°C 2A
0.5
VCE(sat)
(IC = 1 A)
0 0
0.001 0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IB, BASE CURRENT (A)
Figure 7. Base–Emitter Saturation Region Figure 8. Collector Saturation Region
10000 900
TJ = 25°C TJ = 25°C
f(test) = 1 MHz 800 BVCER @ 10 mA
Cib
C, CAPACITANCE (pF)
1000
BVCER (VOLTS)
700
600
100
Cob
500
BVCER(sus) @ 500 mA, 25 mH
10 400
1 10 100 10 100 1000 10000 100000
VR, REVERSE VOLTAGE (VOLTS) RBE (Ω)
Figure 9. Capacitance Figure 10. Resistive Breakdown

BUH100
TYPICAL SWITCHING CHARACTERISTICS
2500 10
IB1 = IB2 TJ = 125°C IB1 = IB2
VCC = 300 V TJ = 25°C VCC = 300 V
2000 8
PW = 40 µs PW = 20 µs
IC/IB = 10
t, TIME ( µs)
1500 TJ = 125°C 6
t, TIME (ns)
IC/IB = 5
TJ = 25°C
1000 4
125°C
500 2
IC/IB = 10
25°C IC/IB = 5
0 0
0 2 4 6 8 10 0 2 4 6 8 10
Figure 11. Resistive Switching Time, ton Figure 12. Resistive Switch Time, toff
7 6
IB1 = IB2 IB1 = IB2

IC/IB = 5 5 IC/IB = 10
VCC = 15 V VCC = 15 V
VZ = 300 V VZ = 300 V
5 LC = 200 µH 4 LC = 200 µH
t, TIME ( µs)
t, TIME ( µs)
3 2
TJ = 125°C 1 TJ = 125°C
TJ = 25°C TJ = 25°C
1 0
1 4 7 10 1 4 7 10
Figure 13. Inductive Storage Time, tsi Figure 13 Bis. Inductive Storage Time, tsi
600 800
IB1 = IB2 TJ = 125°C TJ = 125°C IB1 = IB2
VCC = 15 V TJ = 25°C TJ = 25°C VCC = 15 V
VZ = 300 V VZ = 300 V
LC = 200 µH 600
tc LC = 200 µH
400 tc
t, TIME (ns)
t, TIME (ns)
400
tfi
200 tfi
200
0 0
1 4 7 10 1 4 7 10
Figure 14. Inductive Storage Time, Figure 15. Inductive Storage Time,
tc & tfi @ IC/IB = 5 tc & tfi @ IC/IB = 10

BUH100
4 200
IC = 7.5 A
3 IC = 5 A 150
tsi , STORAGE TIME (µs)
t fi , FALL TIME (ns)

2 100
IC = 7.5 A
IB1 = IB2 IBoff = IB2 IC = 5 A
1 50 VCC = 15 V
VCC = 15 V
TJ = 125°C VZ = 300 V VZ = 300 V TJ = 125°C
TJ = 25°C LC = 200 µH LC = 200 µH TJ = 25°C
0 0
2 4 6 8 10 3 4 5 6 7 8 9 10
hFE, FORCED GAIN hFE, FORCED GAIN
Figure 16. Inductive Storage Time Figure 17. Inductive Fall Time
800
IB1 = IB2
700 VCC = 15 V
VZ = 300 V
t c , CROSSOVER TIME (ns)
600 LC = 200 µH
IC = 7.5 A
500
400
300
200 TJ = 125°C IC = 5 A
TJ = 25°C
100
3 4 5 6 7 8 9 10
hFE, FORCED GAIN
Figure 18. Inductive Crossover Time, tc

BUH100
10
VCE 9 IC 90% IC
8 tfi
dyn 1 µs tsi
7
dyn 3 µs 6
10% Vclamp 10% IC
0V 5 Vclamp
tc
4
90% IB 90% IB1
3 IB
1 µs 2
IB 1
3 µs
0
TIME 0 1 2 3 4 5 6 7 8
TIME
Figure 19. Dynamic Saturation Voltage Figure 20. Inductive Switching Measurements
Measurements
Table 1. Inductive Load Switching Drive Circuit
+15 V
IC PEAK
1 µF 100 Ω 100 µF
150 Ω MTP8P10
3W 3W VCE PEAK
MTP8P10 VCE
MPF930 RB1
MUR105 IB1
+10 V MPF930 Iout IB
A
IB2
50 Ω RB2
MJE210
COMMON
150 Ω MTP12N10
3W V(BR)CEO(sus) Inductive Switching RBSOA
500 µF L = 10 mH L = 200 µH L = 500 µH
RB2 = ∞ RB2 = 0 RB2 = 0
1 µF VCC = 20 Volts VCC = 15 Volts VCC = 15 Volts
–Voff IC(pk) = 100 mA RB1 selected for RB1 selected for
desired IB1 desired IB1
TYPICAL THERMAL RESPONSE
1
SECOND BREAKDOWN
DERATING
0.8
POWER DERATING FACTOR
0.6
THERMAL DERATING
0.4
0.2
0
20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 21. Forward Bias Power Derating

BUH100
There are two limitations on the power handling ability of a TJ(pk) may be calculated from the data in Figure 24. At any
transistor: average junction temperature and second break- case temperatures, thermal limitations will reduce the power
down. Safe operating area curves indicate IC – VCE limits of that can be handled to values less than the limitations
the transistor that must be observed for reliable operation; imposed by second breakdown. For inductive loads, high
i.e., the transistor must not be subjected to greater dissipa- voltage and current must be sustained simultaneously during
tion than the curves indicate. The data of Figure 22 is based turn–off with the base to emitter junction reverse biased. The
on T C = 25°C; T J(pk) is variable depending on power level. safe level is specified as a reverse biased safe operating
Second breakdown pulse limits are valid for duty cycles to area (Figure 23). This rating is verified under clamped
10% but must be derated when T C > 25°C. Second conditions so that the device is never subjected to an
breakdown limitations do not derate the same as thermal avalanche mode.
limitations. Allowable current at the voltages shown on
Figure 22 may be found at any case temperature by using
the appropriate curve on Figure 21.
100 12
GAIN ≥ 5 TC ≤ 125°C
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)

10 LC = 2 mH
10 1 ms 10 µs 1 µs
5 ms 8
EXTENDED
1 DC SOA 6
4
0.1 –5 V
2
0V –1.5 V
0.01 0
10 100 1000 200 300 400 500 600 700 800
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 22. Forward Bias Safe Operating Area Figure 23. Reverse Bias Safe Operating Area
TYPICAL THERMAL RESPONSE
1
r(t), TRANSIENT THERMAL RESISTANCE
0.5
0.2
(NORMALIZED)
0.1 P(pk)
0.1 RθJC(t) = r(t) RθJC
0.05 RθJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
t1 PULSE TRAIN SHOWN
0.02 t2 READ TIME AT t1
DUTY CYCLE, D = t1/t2 TJ(pk) – TC = P(pk) RθJC(t)
SINGLE PULSE
0.01
0.01 0.1 1 10 100 1000
t, TIME (ms)
Figure 24. Typical Thermal Response (ZθJC(t)) for BUH100

BUH100
PACKAGE DIMENSIONS
NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:

USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: [email protected] – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
*BUH100/D*
◊ BUH100/D

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   700 VOLTS

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

 Motorola, Inc. 1995 1

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 125°C 475

Motorola Bipolar Power Transistor Device Data 3

hFE , DC CURRENT GAIN

Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 3 Volt

VCE , VOLTAGE (VOLTS)

Figure 3. DC Current Gain @ 5 Volt Figure 4. Collector–Emitter Saturation Voltage

VBE , VOLTAGE (VOLTS)

TJ = 25°C TJ = – 20°C TJ = – 20°C

Figure 5. Collector–Emitter Saturation Voltage Figure 6. Base–Emitter Saturation Region

4 Motorola Bipolar Power Transistor Device Data

VCE , VOLTAGE (VOLTS)

Figure 7. Base–Emitter Saturation Region Figure 8. Collector Saturation Region

Figure 9. Capacitance Figure 10. Resistive Breakdown

Motorola Bipolar Power Transistor Device Data 5

IB1 = IB2 IB1 = IB2

6 Motorola Bipolar Power Transistor Device Data

t fi , FALL TIME (ns)

Figure 18. Inductive Crossover Time, tc

Motorola Bipolar Power Transistor Device Data 7

Table 1. Inductive Load Switching Drive Circuit

Figure 21. Forward Bias Power Derating

8 Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMPS)

TYPICAL THERMAL RESPONSE

Figure 24. Typical Thermal Response (ZθJC(t)) for BUH100

Motorola Bipolar Power Transistor Device Data 9

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10 Motorola Bipolar Power Transistor Device Data

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700 VOLTS