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Tcad Simulation Study of Algan/Gan High Electron Mobility Transistors (Hemts) For Bio Sensing Application

The document summarizes a student project to simulate AlGaN/GaN high electron mobility transistors (HEMTs) for biosensing applications using TCAD software. The project aims to study the physical device models and mechanisms of HEMTs, such as gate tunneling and leakage currents. It also seeks to examine characteristics like drain-source current, transconductance, and output curves with variations in temperature and doping. Finally, the switching behavior and off-state breakdown of the proposed HEMT will be investigated for potential use in biosensing.

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AjeshSurejan
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91 views1 page

Tcad Simulation Study of Algan/Gan High Electron Mobility Transistors (Hemts) For Bio Sensing Application

The document summarizes a student project to simulate AlGaN/GaN high electron mobility transistors (HEMTs) for biosensing applications using TCAD software. The project aims to study the physical device models and mechanisms of HEMTs, such as gate tunneling and leakage currents. It also seeks to examine characteristics like drain-source current, transconductance, and output curves with variations in temperature and doping. Finally, the switching behavior and off-state breakdown of the proposed HEMT will be investigated for potential use in biosensing.

Uploaded by

AjeshSurejan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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TCAD Simulation study of AlGaN/GaN High Electron

Mobility Transistors (HEMTs) for Bio Sensing


application

Project Group Project Mentor


Ajesh S. – B150784EC Dr. Lintu Rajan
M.R. Aravind – B140210EC Assistant Professor
Rahul K.P. – B150365EC Dept. of ECE
Sachin Jayaprakash – B150389EC
Vineeth T.M. – B150387EC

The advancements in power semiconductor devices made Gallium Nitride


(GaN) based high electron mobility transistors an alternate high performance
device over Silicon transistors. In this work we propose to investigate the
physical based device model and physical mechanisms of AlGaN/GaN high
electron mobility transistors (HEMTs) like gate Schottky tunneling, surface
layer cap leakage, avalanche breakdown and GaN buffer leakage using
Sentaurus TCAD from Synopsys .We bid to study the characteristics like IDS-
VGS, gm-VGS and IDS-VDS output characteristics of GaN HEMTs with variation
in temperature, doping concentration. We also aim to investigate the switching
behavior and off-state breakdown of the proposed HEMT. The proposed device
has got future prospects in various bio-sensing applications.

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