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    Transistor MOSFET - 60NF06

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    araragi koyomi
    The document describes the INCHANGE Semiconductor isc N-Channel MOSFET Transistor 60NF06. It has a maximum drain current of 60A at 25°C, a maximum drain-source on-resistance of 0.016 ohms, and is suitable for use as a primary switch in high-efficiency DC-DC converters and motor controls. Its applications include DC-DC converters, UPS systems, automotive systems, and it has maximum ratings of 60V drain-source voltage, 60A continuous drain current, and 175°C maximum operating junction temperature.

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    Transistor MOSFET - 60NF06

    Uploaded by

    araragi koyomi
    345 views2 pages
    The document describes the INCHANGE Semiconductor isc N-Channel MOSFET Transistor 60NF06. It has a maximum drain current of 60A at 25°C, a maximum drain-source on-resistance of 0.016 ohms, and is suitable for use as a primary switch in high-efficiency DC-DC converters and motor controls. Its applications include DC-DC converters, UPS systems, automotive systems, and it has maximum ratings of 60V drain-source voltage, 60A continuous drain current, and 175°C maximum operating junction temperature.

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    Datasheet CI

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    The document describes the INCHANGE Semiconductor isc N-Channel MOSFET Transistor 60NF06. It has a maximum drain current of 60A at 25°C, a maximum drain-source on-resistance of 0.016 ohms, and is suitable for use as a primary switch in high-efficiency DC-DC converters and motor controls. Its applications include DC-DC converters, UPS systems, automotive systems, and it has maximum ratings of 60V drain-source voltage, 60A continuous drain current, and 175°C maximum operating junction temperature.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    345 views2 pages

    Transistor MOSFET - 60NF06

    Uploaded by

    araragi koyomi
    The document describes the INCHANGE Semiconductor isc N-Channel MOSFET Transistor 60NF06. It has a maximum drain current of 60A at 25°C, a maximum drain-source on-resistance of 0.016 ohms, and is suitable for use as a primary switch in high-efficiency DC-DC converters and motor controls. Its applications include DC-DC converters, UPS systems, automotive systems, and it has maximum ratings of 60V drain-source voltage, 60A continuous drain current, and 175°C maximum operating junction temperature.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    INCHANGE Semiconductor isc Product Specification

    isc N-Channel MOSFET Transistor 60NF06

    FEATURES
    ·Drain Current –ID=60A@ TC=25℃
    ·Drain Source Voltage-
    : VDSS= 60V(Min)
    ·Static Drain-Source On-Resistance
    : RDS(on) = 0.016Ω(Max)
    ·Fast Switching

    DESCRIPTION
    Suitable as primary switch in advanced high-efficiency isolated
    DC-DC converters for Telecom and Computer application. It is
    also intended for any application with low gate charge drive
    requirements .

    APPLICATIONS
    ·High-efficiency DC-DC converters
    ·UPS and motor control
    ·Automotive

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 60 V

    VGS Gate-Source Voltage-Continuous ±20 V

    ID Drain Current-Continuous 60 A

    IDM Drain Current-Single Pluse (tp≤10μs) 240 A

    PD Total Dissipation @TC=25℃ 110 W

    TJ Max. Operating Junction Temperature 175 ℃

    Tstg Storage Temperature -65~175 ℃

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance, Junction to Case 1.36 ℃/W

    Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

    isc Website：www.iscsemi.cn
    INCHANGE Semiconductor isc Product Specification

    isc N-Channel MOSFET Transistor 60NF06

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

    V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 60 V

    VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

    RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 30A 0.016 Ω

    IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA

    VDS= 60V; VGS=0 1


    IDSS Zero Gate Voltage Drain Current μA
    VDS= 60V; VGS=0; Tj= 125℃ 10

    VSD Forward On-Voltage IS= 60A; VGS=0 1.3 V

    isc Website：www.iscsemi.cn

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