EE105 – Fall 2014

Microelectronic Devices and Circuits

Prof. Ming C. Wu
[email protected]
511 Sutardja Dai Hall (SDH)

Lecture12-Small Signal Model-BJT 1

Introduction to Amplifiers
•  Amplifiers: transistors biased in the flat-part of the i-v curves
–  BJT: forward-active region
–  MOSFET: saturation region
•  In these regions, transistors can provide high voltage, current and
power gains
•  Bias is provided to stabilize the operating point (the Q-Point) in the
desired region of operation
•  Q-point also determines
–  Small-signal parameters of transistor
–  Voltage gain, input resistance, output resistance
–  Maximum input and output signal amplitudes
–  Power consumption

Lecture12-Small Signal Model-BJT 2

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 Transistor Amplifiers
BJT Amplifier Concept

The BJT is biased in the active region by dc voltage source VBE. e.g.,
Q-point is set at (IC, VCE) = (1.5 mA, 5 V) with IB = 15 µA (βF = 100)
Total base-emitter voltage is: vBE = VBE + vbe
Collector-emitter voltage is: vCE = VCC – iCRC This is the load line
equation.

Lecture12-Small Signal Model-BJT 3

Transistor Amplifiers
BJT Amplifier (cont.)

If changes in operating currents

and voltages are small enough,
then iC and vCE waveforms are
undistorted replicas of the input
signal.
A small voltage change at the base
causes a large voltage change at
collector. Voltage gain is given by:

Vce 1.65∠180 o
8 mV peak change in vBE gives 5 mA Av = = = 206∠180 o = −206
Vbe 0.008∠0 o
change in iB and 0.5 mA change in iC.
Minus sign indicates 180o phase
0.5 mA change in iC produces a 1.65 shift between the input and output
V change in vCE . signals.

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 Transistor Amplifiers
MOSFET Amplifier Concept

Vds
Av =
Vgs
4∠180 o
Av =
1∠0 o
Av = −4.00

MOSFET is biased in active region by dc voltage source VGS. e.g.,

Q-point is set at (ID, VDS) = (1.56 mA, 4.8 V) with VGS = 3.5 V
Total gate-source voltage is: vGS = VGS + vgs
1 Vp-p change in vGS yields 1.25 mAp-p change in iD and a 4 Vp-p change in
vDS

Lecture12-Small Signal Model-BJT 5

Transistor Amplifiers
Coupling and Bypass Capacitors

•  Capacitors are designed to provide

negligible impedance at frequencies
of interest and provide open circuits
at dc.
•  C1 and C2 are low impedance
coupling capacitors or dc blocking
capacitors whose reactance at the
signal frequency is designed to be
negligible.
•  C3 is a bypass capacitor that
provides a low impedance path for
•  ac coupling through capacitors ac current from emitter to ground,
is used to inject ac input signal thereby removing RE (required for
and extract output signal good Q-point stability) from the
without disturbing Q-point circuit when ac signals are
considered.

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 Transistor Amplifiers
dc and ac Analysis – Two Step Analysis
•  dc analysis:
–  Find dc equivalent circuit by replacing all capacitors by open
circuits and inductors by short circuits.
–  Find Q-point from dc equivalent circuit by using appropriate
large-signal transistor model.
•  ac analysis:
–  Find ac equivalent circuit by replacing all capacitors by short
circuits, inductors by open circuits, dc voltage sources by
ground connections and dc current sources by open circuits.
–  Replace transistor by its small-signal model
–  Use small-signal ac equivalent to analyze ac characteristics of
amplifier.
–  Combine end results of dc and ac analysis to yield total
voltages and currents in the network.

Lecture12-Small Signal Model-BJT 7

Transistor Amplifiers
dc Equivalent Circuit for BJT Amplifier

•  All capacitors in the original amplifier circuit are replaced by open

circuits, disconnecting vI , RI , and R3 from circuit.

Lecture12-Small Signal Model-BJT 8

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 Transistor Amplifiers
ac Equivalent Circuit for BJT Amplifier

Capacitors are replaced by short circuits

RB = R1 R2 =100kΩ 300kΩ
R = RC R3 = 22kΩ 100kΩ

Lecture12-Small Signal Model-BJT 9

Transistor Amplifiers
dc and ac Equivalents for a MOSFET Amplifier

Full circuit dc equivalent

ac equivalent Simplified ac equivalent

Lecture12-Small Signal Model-BJT 10

5
 Small-Signal Operation
Diode Small-Signal Model
•  The slope of the diode characteristic at the Q-point is called the
diode conductance and is given by:

∂iD I #V & I
gd = = S exp%% D (( ≈ D
∂vD Q − po int VT $ VT ' VT

•  Diode resistance is given by:

rd = 1
gd

Lecture12-Small Signal Model-BJT 11

Small-Signal Operation
Diode Small-Signal Model (cont.)

•  gd is small but non-zero for ID = 0

because slope of diode equation is
nonzero at the origin.
•  At the origin, the diode conductance
and resistance are given by:

IS VT
gd = and rd =
VT IS

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 Small-Signal Operation
BJT Hybrid-Pi Model

Transconductance:

gm = IC ≅ 40IC
VT
Input resistance:

rπ = βoVT = βo or βo = gmrπ
IC gm
•  The hybrid-pi small-signal model is Output resistance:
the intrinsic representation of the
BJT. ro = VA +VCE ≅ VA
•  Small-signal parameters are IC IC
controlled by the Q-point and are
independent of geometry of the BJT

Lecture12-Small Signal Model-BJT 13

BJT Small-Signal Operation

Small-Signal Model for pnp Transistor
•  For the pnp transistor

iB = IB -ib
iC = IC -ic = βF IB − βF ib

•  Signal current injected into

€ base causes decrease in total
collector current which is
equivalent to increase in
signal current entering
collector.
•  So the small-signal models for
the npn and pnp devices are
identical!

Lecture12-Small Signal Model-BJT 14

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 Common-Emitter Amplifiers
Small-Signal Analysis - ac Equivalent Circuit

•  ac equivalent circuit is constructed by assuming that all

capacitances have zero impedance at signal frequency and dc
voltage sources are ac ground.
•  Assume that Q-point is already known.

Lecture12-Small Signal Model-BJT 15

Common-Emitter Amplifiers
Small-Signal Equivalent Circuit

•  Input voltage is applied to the base terminal

•  Output signal appears at collector terminal
•  Emitter is common to both input and output signals
Thus circuit is termed a Common-Emitter (C-E) Amplifier.
•  The terminal gain of the C-E amplifier is the gain from the
base terminal to the collector terminal

vc
AvtCE = = −gm RL RL = ro RC R3
vb

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 Common-Emitter Amplifiers
Input Resistance and Signal Source Gain

(β o + 1)RE

Define RiB as the input resistance vb

RiB = = rπ
looking into the base of the transistor: ib

The input resistance presented to vi is: Rin = RI + RB RiB = RI + RB rπ

The signal source voltage gain is: vo vo vb RB rπ

AvCE = = = AvtCE
vi vb vi RI + RB rπ

Lecture12-Small Signal Model-BJT 17

Common-Emitter Amplifiers
“Rule of Thumb” Design Estimate
RB rπ
AvCE = AvtCE ≅ AvtCE AvtCE = −gm RL RL = ro RC R3
RI + RB rπ
Typically: ro >> RC and R3 >> RC AvCE ≅ −gm RC = −40I C RC

I C RC represents the voltage dropped across collector resistor R C

VCC
A typical design point is I C RC =
3
CE VCC
∴ Av ≅ −40 = −13.3VCC
3
To help account for all the approximations and have a number that is easy to
remember, our "rule-of-thumb" estimate for the voltage gain becomes

AvCE ≅ −10VCC

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 Common-Emitter Amplifiers
Voltage Gain Example
•  Problem: Calculate voltage gain, input
resistance and maximum input signal level
for a common-emitter amplifier
•  Given data: βF = 100, VA = 75 V, Q-point is
(0.245 mA, 3.39 V)
•  Assumptions: Transistor is in active region,
βO = βF. Signals are low enough to be
considered small signals. Room
temperature.
•  Analysis:
βo 100
gm = 40I C = 40 ( 0.245mA) = 9.80 mS rπ = = = 10.2 kΩ
gm 9.8mS
VA +VCE 75V + 3.39V
ro = = = 320 kΩ RB = R1 R2 = 160kΩ 300kΩ = 104 kΩ
IC 0.245mA
RL = ro RC RL = 320kΩ 22kΩ 100kΩ = 17.1 kΩ RB rπ = 104kΩ 10.2kΩ = 9.29 kΩ

Lecture12-Small Signal Model-BJT 19

Common-Emitter Amplifiers
Voltage Gain Example (cont.)

" R r % " 9.29kΩ %

B π
Av = −gm RL $$ '' = −9.8mS (17.1kΩ) $ ' = −168 ( 0.903) = −151
# RI + RB rπ & # 1kΩ + 9.29kΩ &
Rin = RI + RB rπ = 10.3 kΩ
" R r % " 10.3kΩ %
B π
vbe = vi $$ '' ∴vbe ≤ 0.005V → vi ≤ 5mV $ ' = 5.54 mV
# RI + RB rπ & # 9.29kΩ &

Check the rule-of-thumb estimate: AvCE ≅ −10 (12 ) = −120 (ballpark estimate)
What is the maximum amplitude of the output signal: vo ≤ 5.54mV (−151) = 0.837 V

Lecture12-Small Signal Model-BJT 20

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 Common-Emitter Amplifiers
Voltage Gain Example (cont.)
•  Simulation Results: The graph below presents the output voltage
for an input voltage that is a 5-mV, 10-kHz sine wave.
•  Note that although the sine wave at first looks good, the positive
and negative peak amplitudes are different indicating the presence
of distortion. The input is near our small-signal limit for linear
operation.

Lecture12-Small Signal Model-BJT 21

Common-Emitter Amplifiers
Dual Supply Operation - Example
Analysis: To find the Q-point, the
dc equivalent circuit is
constructed.

105 IB +VBE +(βF +1)IB (1.6×104 )= 5

€
∴I B =3.71 µ A

IC = 65I B = 241 µ A

IE = 66I B = 245 µ A
•  Problem: Find voltage gain, input and
output resistances for the circuit above
•  Given: βF = 65, VA = 50 V
5−104 IC −VCE −(1.6×104 )IE −(−5)=0
•  Assumptions: Active-region operation,
VBE = 0.7 V, small signal operating ∴VCE =3.67 V
conditions.

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 Common-Emitter Amplifiers
Dual Supply Operation - Example (cont.)
•  Next we construct the ac
equivalent and simplify it.
6.74
kΩ

Rin = RB rπ =6.31 kΩ

gm = 40IC =9.64×10−3 S
Rout = RC ro = 9.57 kΩ
rπ = βo =6.74 kΩ # Rin &
40IC vo
AvCE = = −gm ( Rout R3 ) % ( = −84.0
V vi $ RI + Rin '
ro = A +VCE =223 kΩ
IC Gain Estimate: AvCE ≅ −10 (VCC +VEE ) = −100

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