6.720J/3.

43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-1

Lecture 2 - Carrier Statistics in Equilibrium

September 5, 2002

Contents:

1. Conduction and valence bands, bandgap, holes

2. Intrinsic semiconductor
3. Extrinsic semiconductor
4. Conduction and valence band density of states

Reading assignment:

del Alamo, Ch. 2, §§2.1-2.4 (2.4.1)

Announcement:

Go to http://weblab.mit.edu and register. Put ”6.720

student” in the Description field.
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-2

Key questions

• What are these ”energy band diagrams”?

• What are these ”holes”?
• In a perfectly pure semiconductor, how many electrons and holes
are there?
• Can one engineer the electron and hole concentrations in a semi-
conductor?
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-3

1. Conduction and valence bands, bandgap, holes

energy
conduction band
Ec Ec

bandgap Eg

Ev ↓ Ev ↓
valence band

space coordinate

Conduction and valence bands:

• bonding electrons occupy states in valence band

• ”free” electrons occupy states in conduction band
• holes: empty states in valence band
• CB electrons and VB holes can move around: ”carriers”

+
-
+

a) b) c)
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-4

-
-
- -
Ec

electron energy

hole energy
Ev
+
+ +

Elements of energy band diagrams:

• at edges of bands, kinetic energy of carriers is zero

• electron energies increase upwards
• hole energies increase downwards

- -
electron energy

Ec

hυ = Eg hυ > Eg

Ev
+ +
hυ > Eg

a) b)
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-5

2. Intrinsic semiconductor

Define intrinsic semiconductor, or ”ideal” semiconductor:

• perfectly crystalline (no perturbations to periodic lattice)

• perfectly pure (no foreign atoms)
• no surface effects

Question: How many electrons and holes are there in an intrinsic

semiconductor in thermal equilibrium?

Answer requires fairly elaborate model [lecture 3], but key dependen-
cies can be readily identified.

Define:

no ≡ equilibrium (free) electron concentration in conduction band [cm−3]

po ≡ equilibrium hole concentration in valence band [cm−3]

Certainly in intrinsic semiconductor:

no = po = ni

ni ≡ intrinsic carrier concentration [cm−3 ]

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-6

Key dependencies of ni :

• Temperature:

T ↑⇒ ni

• Bandgap:

Eg ↑⇒ ni

What is detailed form of dependencies?

Use analogy of chemical reactions.

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-7

Electron-hole formation can be thought of as chemical reaction:

) e− + h+
bond *

similar to water decomposition reaction:

) H + + OH −
H2O *

Law-of-mass action relates concentration of reactants and reaction

products. For water:

[H + ][OH − ] E
K= ∼ exp(− )
[H2O] kT

E is energy consumed or released in reaction.

This is a ”thermally activated” process ⇒ rate of reaction limited

by need to overcome energy barrier E (activation energy).

In analogy, for electron-hole formation:

nopo Eg
K= ∼ exp(− )
[bonds] kT

[bonds] is concentration of unbroken bonds.

Note: activation energy is Eg .

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-8

In general, relatively few bonds are broken. Hence:

[bonds]  no, po

and

[bonds] ' constant

Then:

Eg
nopo ∼ exp(− )
kT

Two important results:

• First,

Eg
ni ∼ exp(− )
2kT

As expected: T ↑⇒ ni ↑

Eg ↑⇒ ni ↓

To get prefactor, need detailed model [lecture 3].

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-9

Arrhenius plot for Si [experiments of Misiakos and Tsamakis, 1993]:

300 K
1E+15

1E+10

1E+05
ni (cm-3)

1E+00

1E-05

1E-10 0.612 eV

1E-15

1E-20
30 50 70 90 110 130 150
-1
1/kT (eV )

In Si at 300 K, ni ' 1.1 × 1010 cm−3.

• Second important result:

nopo = n2i

Equilibrium np product in a semiconductor at a certain temper-

ature is a constant specific to the semiconductor.
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-10

3. Extrinsic semiconductor

Can electron and hole concentrations be engineered?

Insert dopants in substitutional positions in the lattice:

• Donors: introduce electrons to conduction band without intro-

ducing holes to valence band
• Acceptors: introduce holes to valence band without introduc-
ing electrons to conduction band

If any one carrier type overwhelms ni ⇒ extrinsic semiconductor

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-11

Donor in Si, atom from column V (As, P):

- -
+

a) neutral donor b) ionized donor

Acceptor in Si, atom from column III (B):

+
-

a) neutral acceptor b) ionized acceptor

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-12

Representation of donor and acceptor states in energy band diagram:

Ed
Ec
ED

Ea

Ev EA

Ed, Ea ∼ 40 − 60 meV , for common dopants

2 Near room temperature, all dopants are ionized:

ND+ ' ND

NA− ' NA

Typical doping levels:

NA , ND ∼ 1015 − 1020 cm−3

6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-13

2 n-type semiconductor

no ' ND

n2i
po '
ND

These equations are valid at intermediate temperatures.

log no
intrinsic regime

full ionization

ND
carrier
freeze-out
-Eg/2

extrinsic regime -Ed/2

1/kT

2 p-type semiconductor

po ' NA

n2i
no '
NA
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-14

4. Conduction and valence band density of states

6E+22
Si

5E+22

4E+22

DOS (cm eV )
-1
-3

3E+22

2E+22

1E+22

0E+00
-5 -4 -3 -2 -1 0 1 2 3 4 5 6
E-Ev (eV)

[Calculations by M. Fischetti, IBM]

Close to edges:
√
gc(E) ∝ E − Ec E ≥ Ec

√
gv (E) ∝ Ev − E E ≤ Ev

g(E) ∧
gv(E)
gc(E)

0 >
Ev Ec E
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-15

Common expressions for DOS:

 
2m∗de 3/2 √
gc(E) = 4π  E − Ec E ≥ Ec
h2

 
2m∗dh 3/2 √
gv (E) = 4π  Ev − E E ≤ Ev
h2

m∗de ≡ density of states electron effective mass

m∗dh ≡ density of states hole effective mass

Three comments:

• m∗de, m∗dh values given in terms of mo, electron rest mass

i.e. for Si at 300 K, m∗de = 1.09mo, m∗dh = 1.15mo

mo = 5.69 × 10−16 eV · s2 /cm2

• other ”effective masses” defined: conductivity, longitudinal, transver-

sal, light-hole, heavy-hole, etc; only DOS m∗ should be used to
compute DOS
• values of DOS m∗ are definition sensitive
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-16

Key conclusions

• Concept of (free) electron: electron in conduction band.

• Concept of hole: empty state in valence band.
• Intrinsic semiconductor: ideally pure semiconductor.
Eg
no = po = ni ∼ exp(−)
2kT
• To first order, for a given semiconductor nopo is a constant that
only depends on T :

nopo = n2i
• Equilibrium carrier concentrations can be engineered through
shallow dopants ⇒ extrinsic semiconductor.
– n-type semiconductor:
n2i
no ' ND , po '
ND
– p-type semiconductor:
n2i
po ' NA , no '
NA
• Around edges, conduction
√ and valence bands in semiconductors
feature DOS ∼ E.
• Order of magnitude of key parameters for Si at 300 K:
– intrinsic carrier concentration: ni ∼ 1010 cm−3
– typical doping level range: ND , NA ∼ 1015 − 1020 cm−3
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-17

Self study

• Charge neutrality