There are two types of carrier transport in semiconductors: 1) carrier drift, where carriers move due to an applied electric field, producing drift current, and 2) carrier diffusion, where carriers move down a concentration gradient, producing diffusion current. The total current density in a semiconductor is the sum of the drift and diffusion current densities for both electrons and holes, which are related by Einstein's relation that links carrier mobility to diffusion constant when there is no net current flow.
There are two types of carrier transport in semiconductors: 1) carrier drift, where carriers move due to an applied electric field, producing drift current, and 2) carrier diffusion, where carriers move down a concentration gradient, producing diffusion current. The total current density in a semiconductor is the sum of the drift and diffusion current densities for both electrons and holes, which are related by Einstein's relation that links carrier mobility to diffusion constant when there is no net current flow.
There are two types of carrier transport in semiconductors: 1) carrier drift, where carriers move due to an applied electric field, producing drift current, and 2) carrier diffusion, where carriers move down a concentration gradient, producing diffusion current. The total current density in a semiconductor is the sum of the drift and diffusion current densities for both electrons and holes, which are related by Einstein's relation that links carrier mobility to diffusion constant when there is no net current flow.
There are two types of carrier transport in semiconductors: 1) carrier drift, where carriers move due to an applied electric field, producing drift current, and 2) carrier diffusion, where carriers move down a concentration gradient, producing diffusion current. The total current density in a semiconductor is the sum of the drift and diffusion current densities for both electrons and holes, which are related by Einstein's relation that links carrier mobility to diffusion constant when there is no net current flow.
The motion of the carrier due to drift phenomenon produces drift current. Following is the derivation. The resistivity is Velocity saturation Effect of curvature of E vs k profile on the mobility In general the mobility is the following: 2. Carrier diffusion
Diffusion model Therefore the electron diffusion current density
And the hole diffusion current density
Total current density
The total current density is the sum of the drift current density and diffusion current density for the hole and electron
J = Jn + Jp
If Jn and Jp = 0, whereby the drift current balances out with the diffusion current, then
