ADVANCED MOSFET MODELING

Tutorial No: 3

1. An abrupt silicon p-n junction has NA=1017 cm-3 on one side and ND=1015 cm-3 on
the other. Assuming complete ionization, calculate the Fermi level positions at
300K in the p and n regions. Also draw the equilibrium band diagram for the
junction and determine the contact potential V bi from the diagram.
Ans: p-region: p  NA
 (Ei  E Fp ) 
p  n i exp    NA
 kT 
 NA   1017 
 (Ei  E FP )  kT ln    0.026ln  10 
 0.4085eV

 ni   1.5 10 

n-region: n  ND
 (E  E i ) 
n  n i exp  Fn   N D =NA
 kT 
N   1015 
 (E Fn  E i )  kT ln  D   0.026ln   0.289eV
 1.5 1010 
 ni   
At thermal equilibrium, EFn = EFp = EF

p-region n-region

Eip
0.4085 eV
qVbi EF
0.289 eV
Ein

From above figure, qVbi  Eip  Ein  (Eip  EF )  (EF  Ein )

 Vbi  0.4085  0.289  0.69 V

2. A silicon step junction is doped with ND = 1015 cm-3 on the n-side and NA =
4x1020 cm-3 on the p-side. At room temperature, calculate
a) the built-in potential
 b) the depletion layer width and the maximum field at zero bias
c) the depletion layer width and the maximum field at a reverse bias of 5 volts
d) the depletion layer width and the maximum field at a forward bias of 0.5 volt

 15 
 NA ND   10  4 1020 
Ans:(a) Vbi  VT ln   0.026 ln   0.913V
 n 2  2 
 i 
 
 1.5 10 10

 
2
qNeff W
(b) Vbi  Here, Neff  N D
2Si
1/ 2 1/ 2
 2V    2  0.913 1.05 1012 
 W   bi Si     1.04 m
 q  4 1020
 qNeff   
2V 2V 2  0.913
Since x n  W, E m  bi  bi  
 1.75 104 V / cm
xn W 1.04 10 4

(c) Barrier voltage, Vj =Vbi + Vr =0.913+5 = 5.913 V

1/ 2 1/ 2
 2Si Vj   2 1.05 1012  5.913 
W      2.78 m
 qN D   q 1015 
2Vj 2  5.913
Em   
 4.38 104 V / cm
W 2.78 10 4

(d) Barrier voltage, Vj =Vbi – Vf =0.913-0.5 = 0.413 V

1/ 2 1/ 2
 2Si Vj   2 1.05 1012  0.413 
W      0.735 m
 qN D   q  1015

2Vj 2  0.413
Em   
 1.12 104 V / cm
W 0.735 10 4

3. The peak electric field at the junction of a silicon p +n junction of arbitrary n-

doping profile is 1.5x105 volts/cm. Determine
a) the total charge per unit area in the depletion region on the n-side
b) the depletion layer width on the p+ side of the junction if the doping on this
side is uniform and equal to 1019 cm-3
c) the voltage across the depletion layer in the p+ region
 qN
Ans: (a) E   d x  D d x
Si Si
xn
 Cha rg e per unit area   qN D d x  Si E m
0
12
 1.05 10 1.5 1015  1.58 107 C / cm 2
 E m Si
(b) xp   103 m
qN A

 
2
qN A x p 2 q 1019 1107
(c) Vp    7.5mV
2Si 2 1.05 1012

4. A p+n silicon diode is doped with ND = 1016 cm-3 on the n-side, where Dp = 10
cm2/sec and p = 0.1 µsec. The junction area is 10-4 cm2. Calculate the reverse
saturation current and the forward current when V = 0.5volts.
Ans: Lp  Dp p  10  0.1106  103 cm

ND  1016 cm3 , Dp  10cm2 / sec, A  104 cm2

AqDp n i 2
Io   3.6 1015 A
N D Lp

  
IF  Io eV / VT  1  3.6 1015 e0.5/ 0.026  1  0.898 A 
5. The hole injection efficiency of a junction is defined as I p/I where I is the total
diode current. Assuming that the junction follows the diode equations, show that:
Ip/I = 1/(1+Lpn/Lnp), where Ln is the diffusion length of electrons in the p-
region, Lp is the diffusion length of holes in the n-region, n is the conductivity in
the n-region and p is the conductivity of the p-region.

Ans: Ip 

AqDp pno eV / VT 1  (1)
Lp

I  Ip  In 

AqDp pno eV / VT 1   AqDnnpo eV / VT 1
Lp Ln

 AqD n 2 AqD n 2 
  N pL i  N nL i  eV / VT  1
 D p A n

  (2)

Dividing eqn.(1) by eqn.(2),

Ip
 AqDpni2  V / VT
 N DLp 
 
e  
1


 AqDpni2 
 N DLp 

 
I  AqDpni AqDn ni  V / VT
 
 AqDpni AqDn ni2 
2 2 2
 N DLp  N A Ln 
e  1  N D Lp  N A Ln 
   
Dividing numerator and denominator by numerator
Ip 1


I 1  n Lp N D
D
Dp Ln N A 
Since Dn  n VT , Dp  p VT , n  NDqn and p  NAqp ,
 Ip 1 1 1
  
I 1  Dn Lp N D
Dp Ln N A  1  n VT Lp N D
p VT Ln N A  1  n qN D Lp
pqN A Ln 
Ip 1
 
I 1   Lpn
Ln p

6. Determine ND and area of an abrupt silicon p+n junction which provides a forward
current of 1 mA when VF = 0.6 volts and has a peak electric field of 20
volts/micron at a reverse bias voltage of 150 volts. Assume that p = 0.1 µsec on
the n-side and µp =450 cm2 /V.sec.
Ans: I  I eV / VT I  I e  T   103 e 
 V/V  0.6 / 0.026
o o  8.386 1014 A
1 2V 2 150
V E m x d max  x d max    1.5 103cm
2 E m 20 10 4

qN D x d max E  
Also, E m   N D  m o Si  8.78 1014 cm3
o Si qx d max
AqDp n i 2 Io N D L p
Io  A 
N D Lp qDp n i 2
Dp  p VT  450  0.026  11.637 cm 2 / sec

Lp  Dp p  11.637  0.1106  1.079 103 cm

Io N D L p 8.386 1014  8.78 1014 1.079 103
 Area    1.896 104 cm2
qDp n i 2
q 11.637  2.25 10 20