AP9997GH

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D BVDSS 100V

▼ Lower Gate Charge RDS(ON) 120mΩ
▼ Fast Switching Characteristic ID 11A
G
S

Description
Advanced Power MOSFETs from APEC provide the
G
designer with the best combination of fast switching, D
S TO-252(H)
ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications
such as DC/DC converters.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage +20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 11 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 7 A
1
IDM Pulsed Drain Current 30 A
PD@TC=25℃ Total Power Dissipation 34.7 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.6 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 ℃/W

Data and specifications subject to change without notice 1

200812291
AP9997GH

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 100 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 120 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=8A - 7.3 - S
IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=10A - 13 21 nC
Qgs Gate-Source Charge VDS=80V - 2.2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 6 - nC
2
td(on) Turn-on Delay Time VDS=50V - 5 - ns
tr Rise Time ID=10A - 17 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 15 - ns
tf Fall Time RD=5Ω - 4.4 - ns
Ciss Input Capacitance VGS=0V - 450 720 pF
Coss Output Capacitance VDS=25V - 65 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=8A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=10A, VGS=0V - 41 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 73 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP9997GH

20 20

T C = 25 o C 10 V T C = 150 o C
7 .0 V 10 V
5.0 V 7 .0 V
16 16

4.5 V 5.0 V
ID , Drain Current (A)

ID , Drain Current (A)

4.5 V
12 12

8 8

4 V G = 3 .0V 4 V G = 3.0 V

0 0
0 1 2 3 4 5 0 2 4 6 8 10

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

150 2.4

I D =8A I D =8A
140
T C =25 o C V G =10V
2.0

130
Normalized RDS(ON)
RDS(ON) (mΩ)

1.6

120

1.2

110

0.8
100

90 0.4
2 4 6 8 10 -50 0 50 100 150

V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 1.6

8
Normalized VGS(th) (V)

1.2

6
T j =150 o C T j =25 o C
IS(A)

0.8

0.4

0 0.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP9997GH

12 1000
f=1.0MHz
VGS , Gate to Source Voltage (V)

10
C iss

8
I D = 10 A

C (pF)
V DS = 80 V
6 100

C oss
4 C rss

0 10
0 4 8 12 16 20 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthjc)

Duty factor=0.5

10 0.2

100us
ID (A)

0.1

0.1
0.05

PDM
1
1ms 0.02 t
T
10ms 0.01

o 100ms Duty factor = t/T

T c =25 C Single Pulse
Peak Tj = PDM x Rthjc + T C
DC
Single Pulse
0.1 0.01
0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
10V

QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-252

D Millimeters
SYMBOLS
MIN NOM MAX
D1 A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
E2 D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
E1 F1 0.50 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65

B1 F1 F

e e 1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

A2 R : 0.127~0.381

A3 (0.1mm C

Part Marking Information & Packing : TO-252

Laser Marking
Part Number

Meet Rohs requirement

for low voltage MOSFET only
9997GH Package Code
LOGO
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence