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College of Engineering Putrajaya Campus Test Ii SEMESTER 2 2009 / 2010

This document is a test for an electronics course consisting of two questions. It provides instructions for students taking the test, including information that it contains two questions over three pages. Formulas, constants and conversion factors relevant to the test are also provided in an appendix.

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38 views4 pages

College of Engineering Putrajaya Campus Test Ii SEMESTER 2 2009 / 2010

This document is a test for an electronics course consisting of two questions. It provides instructions for students taking the test, including information that it contains two questions over three pages. Formulas, constants and conversion factors relevant to the test are also provided in an appendix.

Uploaded by

zawir
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOC, PDF, TXT or read online on Scribd
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COLLEGE OF ENGINEERING

PUTRAJAYA CAMPUS
TEST II
SEMESTER 2 2009 / 2010

PROGRAMME : Bachelor of Electrical Power Engineering (Honours)


Bachelor of Electrical and Electronics Engineering (Honours)

SUBJECT CODE : EEEB143

SUBJECT : Electronics Analysis & Design I

DATE : 10 Mac 2010

TIME : 1 hour

INSTRUCTIONS TO CANDIDATES:

1. This paper contains TWO (2) questions in THREE (3) pages.

2. Answer ALL.

3. Write all answers in the answer booklet provided.

4. Write answer to each question on a new page.

5. Some formulas, constant numbers and conversion factors are provided in Appendix.

THIS QUESTION PAPER CONSISTS OF 4 PRINTED PAGES INCLUDING THIS


COVER PAGE.

Page 1 of 4
EEEB143, Semester 2 2009/2010

QUESTION 1 [20 marks]

For the circuit shown in Figure 1 below, let β = 100.


(a) Find RTH and VTH for the base circuit. [2 marks]

Figure 1

(b) Determine ICQ and VCEQ. [6 marks]

(c) Draw the load line and plot the Q-point. [2 marks]

(d) If the resistors RC and RE vary by +/- 5 percent, determine the range in ICQ and VCEQ.
[6 marks]

(e) Draw the load lines corresponding to the maximum and minimum resistor values and
plot the Q-points. [4 marks]

QUESTION 2 [20 marks]

For the circuit in Figure 2, Given, β=100, VA= ∞, VCC =10V, and RB =50kΏ, Sketch the
load line graph to indicate the necessary points.

(a) Determine VBB and RC such that ICQ=0.5mA and Q point in the center of line.
[10 marks]
(b) Find the small signal parameters transconductance gm, rπ and output resistance r0
[10 marks]

Page 2 of 4
EEEB143, Semester 2 2009/2010

Figure 2

END OF QUESTIONS-

Page 3 of 4
EEEB143, Semester 2 2009/2010

APPENDIX
EEEB143 FORMULAS

1. ni = BT3/2 exp(-Eg/(2kT)) Small-signal transistor models:


2. n0p0 = ni2
3. Jdrift = (enn + enp)E
4. Vbi = kT ln [ (Na Nd) / ni2 )
5. iD = IS [exp(VD/VT) - 1]
6. IE = IC + IB
7. IC = IB
8.  = (1+)-1
9. VBE(on) = 0.7 V
10. r = VT/IBQ, gm=ICQ/VT ro=VA/ICQ
11. Av=Vo/Vi
12. ID = Kn [ 2 (VGS - VTN ).VDS - V 2DS ]
13. ID = Kp [ 2 (VSG + VTP ).VSD - V2SD ]
14. ID = Kn (VGS - VTN )2
15. ID = Kp (VSG + VTP )2
16. VDS(sat) = VGS - VTN
17. VSD(sat) = VSG + VTP
18. ro = [IDQ]-1
19. gm = 2Kn (VGS - VTN)
vGS 2
20. ID = IDSS [ 1 - ]
VP
21. ro = [ IDQ ]-1
2 I DSS vGS
22. gm = ( ) [1 - ]
 VP VP
23. VDS(sat) = vGS - VP
24. VSD(sat) = VP - vGS

CONSTANTS
Material Eg [eV] B [cm-3 K-3/2]
1. Silicon, Si 1.12 5.23 x 1015
2. Galium Arsenide, GaAs 1.4 2.10 x 1014
3. Germanium, Ge 0.66 1.66 x 1015

GENERAL CONSTANTS AND CONVERSION FACTORS


Constant Symbol Value
Angstrom Å 10-10 m
Boltzmann's constant k 1.38 x 1023 J/K, 8.6 x 10-5 eV/K
Electron-volt eV 1.6 x 10-19 J
Electronic charge e or q 1.6 x 10-19 C
Thermal Voltage VT kT/e or 0.026V at 300K

Page 4 of 4

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