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02 PN Junction

The document discusses the PN junction diode. When a P-type and N-type semiconductor materials are joined together, majority carriers from each region diffuse across the junction, leaving an area devoid of carriers called the depletion region. Applying a forward bias reduces the width of the depletion region, allowing current to flow through the diode. Applying a reverse bias increases the width of the depletion region, preventing current flow.

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syed02
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71 views13 pages

02 PN Junction

The document discusses the PN junction diode. When a P-type and N-type semiconductor materials are joined together, majority carriers from each region diffuse across the junction, leaving an area devoid of carriers called the depletion region. Applying a forward bias reduces the width of the depletion region, allowing current to flow through the diode. Applying a reverse bias increases the width of the depletion region, preventing current flow.

Uploaded by

syed02
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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PN JUNCTION DIODE

Muhammad Adeel
M.Sc. Electronics (KU)
M.Phil. ISPA (KU)
THE PN JUNCTION DIODE:

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Barrier Potential:

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BIASING THE DIODE:

FORWARD BIAS:
Negative terminal of biasing source is connected to N region of the diode,
and Positive terminal of biasing source is connected to P region of the diode.
Depletion region becomes narrower.
Forward Bias allows current through the PN junction.

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REVERSE BIAS:

Reverse Bias prevents current through the PN junction.

Positive terminal of biasing source is connected to N region of the


diode, and Negative terminal of biasing source is connected to P
region of the diode.

Depletion region becomes wider.

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