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    Mje13009 Com Pinagem PDF

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    Mje13009 Com Pinagem PDF

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    179 views7 pages

    Mje13009 Com Pinagem PDF

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    You are on page 1of 7

    ® MJE13009

    HIGH VOLTAGE FAST-SWITCHING


    NPN POWER TRANSISTOR

    ■ STMicroelectronics PREFERRED
    SALESTYPE
    ■ HIGH VOLTAGE CAPABILITY
    ■ MINIMUM LOT-TO-LOT SPREAD FOR
    RELIABLE OPERATION
    ■ LOW BASE-DRIVE REQUIREMENTS
    ■ VERY HIGH SWITCHING SPEED
    ■ FULLY CHARACTERIZED AT 125oC
    3
    APPLICATIONS 2
    1
    ■ ELECTRONIC TRANSFORMER FOR

    HALOGEN LAMPS
    ■ SWITCH MODE POWER SUPPLIES
    TO-220

    DESCRIPTION
    The MJE13009 is a high voltage Multiepitaxial
    Mesa NPN transistor mounted in Jedec TO-220
    plastic package. It uses a Hollow Emitter
    structure to enhance switching speeds. INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    V CEO Collector-Emitter Voltage (I B = 0) 400 V
    V CEV Collector-Emitter Voltage (V BE = -1.5 V) 700 V
    V EBO Emitter-Base Voltage (I C = 0) 9 V
    IC Collector Current 12 A
    I CM Collector Peak Current (t p ≤ 10 ms) 25 A
    IB Base Current 6 A
    I BM Base Peak Current (t p ≤ 10 ms) 12 A
    IE Emitter Current 18 A
    I EM Emitter Peak Current 36 A
    P tot Total Power Dissipation at T c ≤ 25 o C 110 W
    o
    T stg Storage Temperature -65 to 150 C
    o
    Tj Max. Operating Junction Temperature 150 C

    November 2002 1/6


    MJE13009

    THERMAL DATA
    o
    R thj-case Thermal Resistance Junction-case Max 1.14 C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    I CEV Collector Cut-off V CE = 700 V 1 mA
    Current (V EB = -1.5 V) V CE = 700 V T case = 100 o C 5 mA
    I EBO Emitter Cut-off V EB = 9 V 1 mA
    Current (I C = 0)
    V CEO(sus) ∗ Collector-Emitter I C = 10 mA 400 V
    Sustaining Voltage
    (I B = 0)
    V CE(sat) ∗ Collector-Emitter IC = 5 A IB = 1A 1 V
    Saturation Voltage IC = 8 A IB = 1.6 A 1.5 V
    I C = 12 A IB = 3A 3 V
    IC = 8 A IB = 1.6 A
    T case = 100 o C 2 V
    V BE(sat) ∗ Base-Emitter IC = 5 A IB = 1 A 1.2 V
    Saturation Voltage IC = 8 A I B = 1.6 A 1.6 V
    IC = 8 A I B = 1.6 A
    T case = 100 o C 1.5 V
    h FE ∗ DC Current Gain IC = 5 A V CE = 5 V 8 40
    IC = 8 A V CE = 5 V 6 30
    fT Transition Frequency I C = 500 mA V CE = 10 V 4 MHz
    C OB Output Capacitance V CB = 10 V f = 0.1 MHz 180 pF
    (I E = 0)
    RESISTIVE LOAD
    t on Turn-on Time V CC = 125 V I C = 8A 1.1 µs
    ts Storage Time I B1 = -IB2 = 1.6 A t p = 25 µs 3 µs
    tf Fall Time Duty Cycle ≤ 1 (see figure 2) 0.7 µs
    ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 %

    Safe Operating Areas Derating Curve

    2/6
    MJE13009

    DC Current Gain DC Current Gain

    Collector Emitter Saturation Voltage Base Emitter Saturation Voltage

    Inductive Load Fall Time Inductive Load Storage Time

    3/6
    MJE13009

    Reverse Biased SOA

    Figure 1: Inductive Load Switching Test Circuit

    1) Fast electronic switch


    2) Non-inductive Resistor
    3) Fast recovery rectifier

    Figure 2: Resistive Load Switching Test Ciurcuit

    1) Fast electronic switch


    2) Non-inductive Resistor

    4/6
    MJE13009

    TO-220 MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.
    A 4.40 4.60 0.173 0.181
    C 1.23 1.32 0.048 0.052
    D 2.40 2.72 0.094 0.107
    E 0.49 0.70 0.019 0.027
    F 0.61 0.88 0.024 0.034
    F1 1.14 1.70 0.044 0.067
    F2 1.14 1.70 0.044 0.067
    G 4.95 5.15 0.194 0.202
    G1 2.40 2.70 0.094 0.106
    H2 10.00 10.40 0.394 0.409
    L2 16.40 0.645
    L4 13.00 14.00 0.511 0.551
    L5 2.65 2.95 0.104 0.116
    L6 15.25 15.75 0.600 0.620
    L7 6.20 6.60 0.244 0.260
    L9 3.50 3.93 0.137 0.154
    M 2.60 0.102
    DIA. 3.75 3.85 0.147 0.151

    P011CI

    5/6
    MJE13009

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
    granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
    subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
    are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
    The ST logo is a trademark of STMicroelectronics

    © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved


    STMicroelectronics GROUP OF COMPANIES
    Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
    Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

    http://www.st.com

    6/6
    This datasheet has been download from:

    www.datasheetcatalog.com

    Datasheets for electronics components.

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