Scribd Logo
Upload

Welcome to Scribd!

  • 126 views

    2N 2646

    Uploaded by

    Sankar Nayagam
    This document provides specifications for the 2N2646 and 2N2647 silicon unijunction transistors. The 2N2646 is intended for general purpose industrial applications requiring circuit economy, while the 2N2647 has low emitter leakage and trigger currents, making it suitable for triggering high power SCRs. Key parameters specified include maximum ratings, electrical characteristics, and intended applications of each transistor type.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2N 2646

    Uploaded by

    Sankar Nayagam
    126 views2 pages
    This document provides specifications for the 2N2646 and 2N2647 silicon unijunction transistors. The 2N2646 is intended for general purpose industrial applications requiring circuit economy, while the 2N2647 has low emitter leakage and trigger currents, making it suitable for triggering high power SCRs. Key parameters specified include maximum ratings, electrical characteristics, and intended applications of each transistor type.

    Original Description:

    transistor details

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for the 2N2646 and 2N2647 silicon unijunction transistors. The 2N2646 is intended for general purpose industrial applications requiring circuit economy, while the 2N2647 has low emitter leakage and trigger currents, making it suitable for triggering high power SCRs. Key parameters specified include maximum ratings, electrical characteristics, and intended applications of each transistor type.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    126 views2 pages

    2N 2646

    Uploaded by

    Sankar Nayagam
    This document provides specifications for the 2N2646 and 2N2647 silicon unijunction transistors. The 2N2646 is intended for general purpose industrial applications requiring circuit economy, while the 2N2647 has low emitter leakage and trigger currents, making it suitable for triggering high power SCRs. Key parameters specified include maximum ratings, electrical characteristics, and intended applications of each transistor type.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2N2646

    2N2647

    SILICON UNIJONCTION TRANSISTORS


    Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point
    current and valley current as well as a much higher base-one peak pulse voltage. In addition, these
    devices are much faster switches.

    The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary
    importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications
    where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where
    a low emitter leakage current and a low peak point emitter current (trigger current) are required and also
    for triggering high power SCR’s.

    CASE

    MAXIMUM RATINGS (*)

    TJ=125°C unless otherwise noted

    Symbol Ratings 2N2646 2N2647


    VB1E Base 1 – Emitter Voltage 30 V

    VB2E Base 2 – Emitter Voltage 30 V

    IFRMS RMS Emitter Current 50 mA

    IEM Emitter Peak Current 2 A

    PTOT Total Power Dissipation 300 mW

    TJ Maximum Junction 150


    °C
    TSTG Storage Temperature Range -55 to +175

    ELECTRICAL CHARACTERISTICS

    TJ=25°C unless otherwise noted, RGK=1000Ω

    2N2646 – 2N2647
    Symbol Ratings Min Max
    IEO Emitter Reverse Current 12 µA
    Base 1 – Emitter Breakdown Voltage
    V(BR)B1E 30 V
    IE =100 µA

    COMSET SEMICONDUCTORS 1/2


    2N2646
    2N2647

    2N2646 – 2N2647
    Symbol Ratings Min Max
    Interbase Resistance
    RBBO 4.7 9.1 kΩ
    VB1B2 = 3 V
    Intrinsic stand-off ratio 2N2646 0.56 0.75
    η VB1B2 = 10 V
    -
    2N2647 0.68 0.82
    Emitter Saturation Voltage
    VE(SAT) - 2.5 V
    IE = 50 mA, VB1B2 = 10 V
    Valley Current 2N2646 4 -
    IV mA
    VB1B2 = 20 V 2N2647 8 -
    Peak Current 2N2646 - 5
    IP
    VB1B2 = 25 V µA
    2N2647 - 2

    * VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage.

    Information furnished is believed to be accurate and reliable. However, CS assumes no responsability


    for the consequences of use of such information nor for errors that could appear.
    Data are subject to change without notice.

    COMSET SEMICONDUCTORS 2/2

    You might also like