Edc Lab Exp 1aand1b
Edc Lab Exp 1aand1b
Edc Lab Exp 1aand1b
I. OBJECTIVES
1. To investigate the characteristics of a Silicon diode.
2. To determine the amount of voltage that will turn on the
Silicon diode.
II. BASIC CONCEPT
PN diode is a two terminal device which exhibits a drastic
increase in forward electron current when a forward voltage
reaches the barrier potential (0.3V for Ge and 0.7V for Si). This
occurs when the anode terminal is made positive with respect to
cathode.
On the other hand, when anode is made negative with
respect to cathode, reverse current flows. This current increases
rapidly when the reverse voltage reaches the reverse breakdown
voltage. Under these circumstances, the PN diode acts as a high
resistance making it to conduct very poorly.
III. MATERIALS
Quantity escription
D
1 10ohm resistor (1/2 W)
1 100ohm resistor (1/2 W)
1 1Kohm resistor (1/2 W)
1 1N4001 silicon diode
1 DC Power Supply
1 Signal Generator
1 Multimeter
1 Breadboard
1 Dual Trace Oscilloscope
1set Connecting wires
1
IV. WIRING DIAGRAMS
Figure 1.3
V. PROCEDURE
1. Using your VOM, select a low resistance meter
range and connect the positive lead of the VOM
to the diode’s anode terminal, while the negative
lead, cathode’s terminal, as shown in Figure 1.1.
measure the resistance reading.
2. Now reverse the VOM’s lead to that the meter’s
positive lead is connected to the cathode and the
negative lead the anode. Note the resistance
reading. This is the reverse resistance.
3. Connect the circuit as shown in Figure 1.2.
Adjust the DC power supply to give a voltage
across the 1Kohm as shown in Table 1.1. For
each voltage, measure and record the DC voltage
2
drop (V ) across the diode. Determine the diode
D
3
VI. DATA AND RESULTS
Table 1.1
Input Voltage Diode Voltage Diode Forward Current
Vin (V) VD (V) ID (mA)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
2
3
4
5
6
7
8
9
10
Table 1.2
Parameter Step 4 Step 7
Diode Barrier Potential VB(V)
Diode Forward Resistance RF(Ω)
XI. QUESTIONS/PROBLEMS
1. When an ohmmeter is used to test a diode, as shown in
Figure 1.1, a very low resistance (but not zero) in one
direction means that the diode is
a. Open
4
b. Forward bias
c. Shorted
d. Reversed bias
a. 0.3V
b. 0.6V
c. 0.9V
d. 1.2V
a. 0.5 mA/division
b. 5 mA/division
c. 50 mA/division
d. 0.5 A/division
5. For the region of the diode curve greater than the diode’s
barrier potential
a. The curve is essentially horizontal
b. The diode forward resistance approaches an open circuit
c. The diode voltage increases rapidly
d. The diode current increases
5
EXPERIMENT 1B: DIODE RECTIFIERS
I. OBJECTIVES
1. To investigate three diode rectifier circuits; half-wave
rectifier, center-tapped full-wave rectifier, and full-wave
bridge type rectifier.
2. To determine which diode rectifier circuit will give an
improved dc level from sinusoidal input.
II. BASIC CONCEPT
Rectification is the process of obtaining a DC level voltage
from an AC source. Rectifier circuits can be half-wave, full
wave, and full-wave bridge rectifier circuits.
A circuit is known to be a half-wave rectifier if the load
current flows approximately one-half of the sine-wave period.
Only one-half of the waveform is seen in the oscilloscope
because the diode is “cut-off” during one-half of the cycle.
V =V -V
m s(pk) D
I =V /R
m m L
V = 0.318V
DC m
where
V = output rectified voltage
m
V = secondary voltage
s(pk)
m
I = output current
V = diode’s voltage drop
D
V = DC or average voltage
DC
I =V /R
m m L
V = 0.636V
DC m
6
entire cycle because at the time when two diodes are “cut-off”,
the other two are operating.
V =V -2V m s(pk) D
I =V /R m m L
V = 0.636V DC m
III. MATERIALS
Quantity escription
D
1 1-K Ω resistor (1/2 watt)
6 1N4001 silicon diode
1 12V/1A secondary center tapped
transformer (with plug)
1 Multimeter
1 Breadboard
1 Dual Trace Oscilliscope
1set Connecting wires
7
Figure 1.2 Center-tapped Full Wave Rectifier
V. PROCEDURE
1. Connect the half-wave rectifier circuit shown
in Figure 1.1
2. Set the oscilloscope to the following:
Channels 1 and 2: 10V/division, DC coupling
Time Base: 5ms/Division
3. Measure the transformer’s peak secondary
voltage and record this as V in Table 1.1.
s
same scale.
5. With your VOM or DMM, measure the DC
voltage (V ) across the 1 KΩ resistor and
DC
8
results with that obtained from the ideal
equations for the average or DC voltage of the
half-wave rectifier.
6. Turn off the power to the transformer and wire
the center-tapped full-wave rectifier circuit
shown in Figure 1.2.
7. Now set the oscilloscope to the following
approximate settings:
Channel 1 and 2: 5V/division, DC coupling
Time base: 5ms/division
8. Repeat steps 3-5.
9. Turn off the power to the transformer and wire
the full-wave bridge rectifier circuit shown in
Figure 1.3.
10. Repeat steps 3-5.
Table 1.1
Measured Parameter HW Rectifier C-T FW Rectifier FW Bridge Rectifier
Vs
Vm
VDC
9
XII. APPLICATION (CIRCUIT SIMULATION)
12V
10