Preliminary Datasheet

RJH60F5DPQ-A0
600 V - 40 A - IGBT R07DS0326EJ0200
Rev.2.00
High Speed Power Switching Jul 22, 2011

Features
 Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching
tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)

Outline

RENESAS Package code: PRSS0003ZH-A

(Package name: TO-247A)

4
1. Gate
2. Collector
G
3. Emitter
4. Collector

1 2
3 E

Absolute Maximum Ratings

(Tc = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage VCES 600 V
Gate to emitter voltage VGES ±30 V
Collector current Tc = 25 °C IC 80 A
Tc = 100 °C IC 40 A
Collector peak current ic(peak) Note1 160 A
Collector to emitter diode forward peak current iDF(peak) Note2 100 A
Collector dissipation PC 260.4 W
Junction to case thermal impedance (IGBT) j-c 0.48 °C/W
Junction to case thermal impedance (Diode) j-cd 2.0 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. Pulse width limited by safe operating area.
2. PW  5 s, duty cycle  1%

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RJH60F5DPQ-A0 Preliminary

Electrical Characteristics
(Tj = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current ICES   100 A VCE = 600V, VGE = 0
Gate to emitter leak current IGES   ±1 A VGE = ±30 V, VCE = 0
Gate to emitter cutoff voltage VGE(off) 4  8 V VCE = 10 V, IC = 1 mA
Collector to emitter saturation voltage VCE(sat)  1.37 1.8 V IC = 40 A, VGE = 15 V Note3
VCE(sat)  1.7  V IC = 80 A, VGE = 15 V Note3
Input capacitance Cies  2780  pF VCE = 25 V
Output capacitance Coes  122  pF VGE = 0 V
Reverse transfer capacitance Cres  43  pF f = 1 MHz
Switching time td(on)  53  ns IC = 30 A,
tr  145  ns VCE = 400 V, VGE = 15 V
td(off)  105  ns Rg = 5  Note3,
tf  85  ns Inductive load
 Note3
C-E diode forward voltage VECF1 1.2 2.1 V IF = 20 A
  Note3
VECF2 1.5 V IF = 40 A
C-E diode reverse recovery time trr  90  ns IF = 20 A
diF/dt = 100 A/s
Notes: 3. Pulse test

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RJH60F5DPQ-A0 Preliminary

Main Characteristics

Maximum Safe Operation Area Typical Output Characteristics

1000 160
Pulse Test 10.5 V
10 V
Ta = 25°C

Collector Current IC (A)

Collector Current IC (A)

11 V
100 PW 120 9.5 V
= 13 V
10
μs 15 V

10
0μ
10 80

s
9V

1 40 8.5 V
Tc = 25°C VGE = 8 V
Single pulse
0.1 0
1 10 100 1000 0 1 2 3 4 5

Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V)

Collector to Emitter Saturation Voltage

Typical Transfer Characteristics vs. Gate to Emitter Voltage (Typical)

VCE(sat) (V)
Collector to Emitter Saturation Voltage
160 3.0
Pulse
VCE = Test
10 V Ta = 25°C
Ta = 25Test
Pulse °C Pulse Test
Collector Current IC (A)

2.6
120 IC = 20 A
40 A
2.2
80 A
80
1.8
Tc = 75°C
40
1.4
25°C –25°C

0 1.0
2 4 6 8 10 12 6 8 10 12 14 16 18 20

Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V)

Collector to Emitter Saturation Voltage Gate to Emitter Cutoff Voltage

vs. Junction Temparature (Typical) vs. Junction Temparature (Typical)
Gate to Emitter Cutoff Voltage VGE(off) (V)
VCE(sat) (V)
Collector to Emitter Saturation Voltage

2.2 10
VGE = 15 V VCE = 10 V
Pulse Test IC = 80 A Pulse Test
2.0
8
IC = 10 mA
1.8
6
1.6 40 A

4 1 mA
1.4 20 A
2
1.2

1.0 0
−25 0 25 50 75 100 125 150 −25 0 25 50 75 100 125 150

Junction Temparature Tj (°C) Junction Temparature Tj (°C)

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RJH60F5DPQ-A0 Preliminary

Typical Capacitance vs.

Forward Current vs. Forward Voltage (Typical) Collector to Emitter Voltage
100 10000
VGE = 0 V
Diode Forward Current IF (A)
f = 1 MHz Cies
80

Capacitance C (pF)
1000
60

40
100

VGE = 0 V Coes
20
Ta = 25°C
Pulse Test Ta = 25°C Cres
0 10
0 1 2 3 4 0 50 100 150 200 250 300

C-E Diode Forward Voltage VCEF (V) Collector to Emitter Voltage VCE (V)

Dynamic Input Characteristics (Typical)

Collector to Emitter Voltage VCE (V)

800 16
Gate to Emitter Voltage VGE (V)

VGE

VCE
600 12
VCC = 300 V
600 V
400 8

200 VCC = 600 V 4

300 V
IC = 40 A
Ta = 25°C
0 0
0 20 40 60 80 100

Gate Charge Qg (nc)

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RJH60F5DPQ-A0 Preliminary

Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2)

1000 100000

Swithing Energy Losses E (μJ)

VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
Switching Times t (ns)

Eon includes the diode recovery

10000

tf
td(off)
100 1000
tr
td(on) Eoff
100
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C Eon
tr includes the diode recovery
10 10
1 10 100 200 1 10 100 200

Collector Current IC (A) Collector Current IC (A)

(Inductive load) (Inductive load)

Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4)

240 1600
VCC = 400 V, VGE = 15 V
Swithing Energy Losses E (μJ)
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω IC = 30 A, Rg = 5 Ω
200
Switching Times t (ns)

tr includes the diode recovery Eon includes the diode recovery

1200
160
tf Eoff
120 td(off) 800

tr Eon
80
400
40 td(on)

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

Junction Temperature Tj (°C) Junction Temperature Tj (°C)

(Inductive load) (Inductive load)

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RJH60F5DPQ-A0 Preliminary

Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)

Normalized Transient Thermal Impedance γs (t)

10
Tc = 25°C

D=1
1
0.5

0.2 θj – c(t) = γs (t) • θj – c

0.1
θj – c = 0.48 °C/W, Tc = 25°C
0.05
0.1
PDM PW
D=
0.02 0.01 1 shot pulse T
PW
T
0.01
10 μ 100 μ 1m 10 m 100 m 1 10

Pulse Width PW (s)

Normalized Transient Thermal Impedance vs. Pulse Width (Diode)

Normalized Transient Thermal Impedance γs (t)

10
Tc = 25°C

D=1
1
0.5

0.2 θj – c(t) = γs (t) • θj – c

0.1 θj – c = 2°C/W, Tc = 25°C
0.1 0.05
2 PW
0.0 PDM D=
T
0.01 PW
1 shot pulse T
0.01
10 μ 100 μ 1m 10 m 100 m 1 10

Pulse Width PW (s)

Switching Time Test Circuit Waveform

90%

Diode clamp 10%

VGE

L 90% 90%

10% 10%
IC 1%

D.U.T VCC td(on) tr td(off) tf ttail

ton toff
Rg
VCE

10%

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RJH60F5DPQ-A0 Preliminary

Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
TO-247A  PRSS0003ZH-A  6.14g Unit: mm

15.94 ± 0.19 5.02 ± 0.19 3.60 ± 0.1

6.15
21.13 ± 0.33

17.63
20.19 ± 0.38

2.10 +– 0.2
0.1
4.5 max

13.26

1.27 ± 0.13

5.45 5.45 0.71 ± 0.1 2.41

Ordering Information
Orderable Part Number Quantity Shipping Container
RJH60F5DPQ-A0-T0 240 pcs Box (Tube)

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Jul 22, 2011
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