4 Diffusion+ficks PDF
4 Diffusion+ficks PDF
Prof.P. Ravindran,
Department of Physics, Central University of Tamil
Nadu, India
http://folk.uio.no/ravi/PMAT2013
P.Ravindran, PHY085 Properties of Materials, 2014 February: Diffusion and Ficks law
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Diffusion:
(1) motion of one or more particles of a system relative to
other particles (Onsager, 1945)
P.Ravindran, PHY085 Properties of Materials, 2014 February: Diffusion and Ficks law
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P.Ravindran, PHY085 Properties of Materials, 2014 February: Diffusion and Ficks law
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Diffusion (conduction)
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Diffusion
Mechanisms
Gases & Liquids random (Brownian) motion
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x (mm)
time (s)
Mass Transfer
Mass transfer occurs when a component in a mixture goes from one point to
another.
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Example of Mass Transfer
Mass transfer can occur by either diffusion or by convection.
P.Ravindran, PHY085 Properties of Materials, 2014 February: Diffusion and Ficks law
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Diffusion is slow!
Air Blood
Oxygen
Carbon dioxide
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Diffusion
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Diffusion
A B Liquids A and B are separated from each other.
Separation removed.
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Concentrated Region
Molecules in a concentrated
region will disperse into the
rest of the medium. C1
x
The difference in
concentrations is the
concentration gradient.
C2
C C1 C2
x x
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Diffusion Constant
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Temperature Diffusivity
(C) (cm2/s)
CO2-N20 0 0.096
(gas)
Ar-O2 20 0.2
Ethanol(5%)-Water 25 1.13E-05
(liquid)
Water(13%)-Butanol 30 1.24E-05
H2-Ni 85 1.16E-08
(solid)
Al-Cu 20 1.30E-30
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Diffusion & Transport 18
kdiff is the diffusion coefficient of the medium, which is a measure of how fast a commodity diffuses
in the medium, and the negative sign is to make the flow in the positive direction a positive
quantity (note that dC/dx is a negative quantity since concentration decreases in the flow
direction).
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The diffusion coefficients and thus diffusion rates of gases depend strongly on
temperature.
The diffusion rates are higher at higher temperatures.
The larger the molecular spacing, the higher the diffusion rate.
Diffusion rate: gases > liquids > solids
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Temperature
The driving force for mass transfer is
the concentration difference.
Both heat and mass are transferred
from the more concentrated regions to
the less concentrated ones.
If there is no difference between the
concentrations of a species at different
parts of a medium, there will be no
mass transfer.
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Gradient 21
Ficks Law
( , , )
x y z
During diffusion we assume particles move in the
direction of least density. They move down the
concentration gradient
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Ficks Law
J measures mol/m3.
There is a diffusion time t for diffusion in one direction over
a distance Dx.
x 2
t
2D
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l2
D is called the diffusion coefficient. It has units of
t
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Mass is transferred by conduction (called diffusion) and convection only.
Rate of mass Ficks law of
diffusion diffusion
DAB is the diffusion coefficient (or
mass diffusivity) of the species in the
mixture
CA is the concentration of the species
in the mixture
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5) Influenza epidemics
6) Chemical reactions
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Unsteady state diffusion
Back to a drop of ink in a glass
of water If consider diffusion in the z-
direction only:
How does the concentration profile
change with time?
t=0
(add ink drop all
ink located at z =
t
0)
z
z=0
A measure of the spread due to diffusion is the diffusion length
Ld = (4Dt)0.5, where D is the diffusivity coefficient and t is time.
Note: for small time, spreading is quick, but for long times it
slows down. Thats why you stir your coffee after adding
cream. Diffusion doesnt work fast enough over long distances.
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c
dc
J D 0
dx
dc x
J D
dx
D diffusion coefficient
c
dc
J D 0
dx
x
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Continuum description of diffusion
j+
j
x-L x x+L
j: flux of particles (number of particles per unit area per unit time)
c: concentration of particles (number of particles per unit volume)
Random walk in 1D; half of particles in each bin move to the left and
half to the right.
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Right, left and total fluxes at x are given by
c( x L / 2) AL
1 1
c( x L / 2) AL
j 2
, j 2
At At
j j j
L
c( x L / 2) c( x L / 2)
2t
L L dc L dc
j c ( x ) c ( x )
2t 2 dx 2 dx
L2 dc dc
D , Fick' s law
2t dx dx
Generalise to 3D: j D c
Flux direction: particles move from high concentration to low concentration
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Conservation laws:
Total number of particles is conserved.
If there is a net flow of particles inside a bin, j j
c(x,t)
the concentration inside must increase by
the same amount.
x-L/2 x x+L/2
c( x, t t ) c( x, t )AL j ( x L / 2) j ( x L / 2)At
c L dj L dj
L j ( x) j ( x)
t 2 dx 2 dx
dc dj
dt dx
dc
j
Generalise to 3D: dt
(similar to charge conservation)
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Integrate the conservation equation over a closed volume V with N parts
dc
dt dV j dV
V V
d
dt V
c dV j n da (Divergence theorem)
S
dN
(rate of change of N = - total flux out)
dt
We can use the conservation equation to eliminate flux from Ficks eqn.
dc dj d 2c dc d 2c
j D , D 2 D 2 nd
dx dx dt Ficks 2 law
dx dx Diffusion eq.
dc
Generalise to 3D: D 2c (analogy with the Schroedinger Eq.)
dt
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Once the initial conditions are specified, the diffusion equation can be
solved numerically using a computer.
Special cases:
No time dependence, dc 0,
dj
0, j const.
dt dx
dc j
j D , c xb
dx D
j c L c0
c0 b, c L L c0 j D
D L
cL c0
c x c0 for 0 x L
L
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c x
c x
time
x
How can we find out c(x,t) ?
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Flux in 1 dimension:
A
J(x+x)
J (x) J (x+x) J
V
J(x)
x x
x
N
J ( x) A J ( x x) A A[ J ( x x) J ( x)] A J
t
dJ dJ dc d ( N / V ) dJ
A x V
dx dx dt dt dx
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dc dJ
dt dx 2
dc d c
D 2
dc dt dx
J D
dx
Fick' s law We can find out c(x,t) !
Ficks second law
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Ficks Laws
c c 2
D 2
t x
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Assumptions
D is independent of concentration
Semiconductor is a semi-infinite slab with either
Continuous supply of impurities that can move into
wafer
Fixed supply of impurities that can be depleted
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c( x ) a bx
surface to the Si/SiO2
interface.
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x
c( x, t ) co erfc
2 Dt
The dose is
Q cx, t dx 2c0 Dt
0
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exp d
z
2
erf ( z ) 2
0
This is a tabulated function. There are several
approximations. It can be found as a built-in
function in MatLab, MathCad, and Mathematica
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c0
Impurity concentration, c(x)
c ( x, t )
1 2 3
cB
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x2
Constant source diffusion has Q
a solution of the form c( x, t ) e 4 Dt
Dt
Here, Q is the dose or the
total number of dopant
atoms diffused into the Si
Q c( x, t )dx
0
Q
The surface concentration is c(0, t )
given by: Dt
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c01
c ( x, t )
Impurity concentration, c(x)
c02
1 2 3
cB
P.Ravindran, PHY085 Properties of Materials, 2014 February: Diffusion and Ficks law
Ficks Second Law: The Diffusion 46
Equation
Consider a small region of space (volume
for 3D, area for 2D)
N
J x x J x x dx dy
t
N
c J x x J x x dx
sincec N / dxdy
t dx
J
J x x J x x dx x definition of the derivative
x
c 2 c c
D 2 sinceJ x D
t x x
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dc d 2c
Flux in 1 dimension: D 2
dt dx
dc d 2c d 2c
Flux in 2 dimensions: D 2 2
dt dx dy
dc d 2
c d 2
c
F
number of particles produced
F D 2 2
volumetime dt dx dy
dp d p d p
2 2
For biological populations: F ( p) D 2 2
dt dx dy
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Types of diffusion
Bulk diffusion
Diffusion in grain boundaries, lattice defects
Surface diffusion
D = D0 exp(-Q/kT)
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Phenomenological description
c
Continuity: jD 0
t
c
Combined: Dc
t
c To be solved for c(x,t) or c(r,t)
If D = const. D 2c
t
Typical 1/2
solution depends on x/(Dt) .
One can define a diffusion front that travels as x2 ~ 6Dt
If defined that way, about 99% of the diffusing element is still
behind the diffusion front.
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Rough correlations
HD / Lm ~ 15
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Examples
Temperature is uniformly T = 912C, the alpha-gamma transition of iron.
Diffusion time t = 1 h =3600 s, distance x2 = 6Dt
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More open, diffusion can take place faster. In fact, dislocations provide
routes for fast diffusion also. Diffusion in grain boundaries makes
predicting the behavior of polycrystals difficult.
Activation energy is lowest for surface diffusion, larger for grain
boundary diffusion, and the highest for bulk diffusion. Therefore, bulk
diffusion dominates at high temperature (larger number of possible
sites) but grain boundary and surface diffusion takes over at lower
temperature.
Technological importance: Thin film deposition, weakening of grain
boundaries by impurities, shape changes of particles, etc.
Diffusion can be accelerated by introducing grain boundaries and other
lattice defects. This is an important benefit from MA (mechanical
alloying).
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Interdiffusion
Interdiffusion: in alloys, atoms tend to migrate from regions
of large concentration.
Initially After some time
100%
0
Concentration Profiles
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Self diffusion
C
A
D
B
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Vacancy diffusion or interstitial diffusion
applies to substitutional impurities
atoms exchange with vacancies
Concentration of Vacancies
rate depends on
at temp T
(1) number of vacancies
(2) activation energy to exchange. E
ni
ci e KBT
Vacancy
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Substitution-diffusion
Vacancy Diffusion:
applies to substitutional impurities
atoms exchange with vacancies
rate depends on (1) number of vacancies;
(2) activation energy to exchange.
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Interstitial diffusion
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Case Hardening:
-Diffuse carbon atoms into the
host iron atoms at the surface.
-Example of interstitial diffusion
is a case hardened gear.
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Processing using Diffusion
Doping Silicon with P for n-type semiconductors:
Process:
1. Deposit P rich
layers on surface.
silicon
2. Heat it.
3. Result: Doped
semiconductor
regions.
silicon
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1 d
Qm
A dt
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Steady-state Diffusion
Concentration Profile, C(x): [kg/m3]
Cu flux Ni flux
Concentration Concentration
of Cu [kg/m3] of Ni [kg/m3]
Position, x
Fick's First Law:
dC
Qm,x D
dx D = m2/s
D=diffusion coefficient
Steady-State Diffusion
Steady State: concentration profile not changing with time.
C(x)
dC
Apply Fick's First Law: Qm,x D
dx
The slope, dC/dx, must be constant (i.e., doesn't vary with position)
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Steady-State Diffusion
dC
Qm,x D
Rate of diffusion independent of time dx
C1 C1
dC C C2 C1
C2 if linear
C2 dx x x2 x1
x1 x2
x
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Example: C Diffusion in steel plate
Steel plate at 7000C with
geometry shown:
700 C
Knowns:
C1= 1.2 kg/m3 at 5mm
(5 x 103 m) below surface.
In steady-state, how much carbon transfers from the rich to the deficient
side?
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Example: Chemical Protection Clothing
Methylene chloride is a common ingredient of paint removers. Besides
being an irritant, it also may be absorbed through skin. When using,
protective gloves should be worn.
If butyl rubber gloves (0.04 cm thick) are used, what is the diffusive flux of
methylene chloride through the glove?
glove
paint C1
2
tb
6D
C2 skin
remover x1 x2
Data:
D in butyl rubber: D = 110 x10-8 cm2/s
surface concentrations: C1 = 0.44 g/cm3 C2 = 0.02 g/cm3
Diffusion distance: x2 x1 = 0.04 cm
C2 - C1 g
Jx = -D = 1.16 x 10-5
x 2 - x1 cm2 s
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Example: Diffusion of radioactive atoms
0
Surface of Ni plate
63 at 1000 C contains
50% Ni (radioactive)
63 and 50% Ni (non-radioactive).
4 microns below surface Ni /Ni = 48:52
Lattice constant of Ni at 1000 C is 0.360 nm. -9 2
Experiment shows that self-diffusion of Ni is 1.6 x 10 cm /sec
63
What is the flux of Ni atoms through a plane 2 m below surface?
How many Ni
63
atoms/second through cell? J (0.36nm )2 9 Ni 63 / s
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Non-Steady-State Diffusion
Concentration profile,
C(x), changes w/ time.
Governing Eqn.:
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Non-Steady-State Diffusion: another look
Concentration profile,
C(x), changes w/ time.
C C J x J x
dx J x J xdx dx J x (J x dx) dx
t t x x
2
c c c
If D is constant: Fick's Second "Law" D D
2
t x x
x
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Non-Steady-State Diffusion: C = c(x,t)
concentration of diffusing species is a function of both time and position
2
c
Fick's Second "Law" c D
2
t
x
Cs
B.C. at t = 0, C = Co for 0 x
at t > 0, C = CS for x = 0 (fixed surface conc.)
C = Co for x =
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Non-Steady-State Diffusion
Cu diffuses into a bar of Al. CS
C(x,t)
2
c c
Fick's Second "Law": D
2 Co
t
x
Solution:
If after 49.5 h the concentration of carbon is 0.35 wt% at a position 4.0 mm below
the surface, what temperature was treatment done?
Solution
C( x, t ) Co 0.35 0.20 x
1 erf 1 erf ( z ) erf(z) = 0.8125
Cs Co 1.0 0.20 2 Dt
Using Table 6.1 find z where erf(z) = 0.8125. Use interpolation. z erf(z)
0.90 0.7970
z 0.90 0.8125 0.7970 z 0.8125
So, z = 0.93
0.95 0.90 0.8209 0.7970 0.95 0.8209
x x2
Now solve for D z D
2 Dt 4z 2t
x2 (4 x 103 m)2 1h 11
D 2 2.6 x 10 m2
/s
4z t (4)(0.93) (49.5 h) 3600 s
2
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Solution (cont.):
To solve for the temperature at which D Qd
has the above value, we use a T
rearranged form of Equation (6.9a); R(ln Do ln D)
D=D0 exp(-Qd/RT)
148,000 J/mol
T
(8.314 J/mol-K)(ln 2.3x105 m2 /s ln 2.6x1011 m2 /s)
T = 1300 K = 1027C
P.Ravindran, PHY085 Properties of Materials, 2014 February: Diffusion and Ficks law
Example: Processing 77
C( x, t ) Co x
1 erf
Cs Co 2 Dt
Note
D(T) are T dependent!
Values of D are provided.
Answer:
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Do = pre-exponential [m2/s]
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Experimental Data:
1000
1500
600
300
T(C)
10-8
D (m2/s)
Dinterstitial >> Dsubstitutional
C in -Fe Cu in Cu
10-14 C in -Fe Al in Al
Fe in -Fe
Fe in -Fe
Zn in Cu
10-20
0.5 1.0 1.5 1000K/T
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1000
1500
600
300
T(C)
fcc-Fe: D0=2.3x105 (m2/s) 10-8
EACT=1.53 eV/atom
T = 900 C D=5.9x1012(m2/s) D (m2/s)
10-20
0.5 1.0 1.5 1000 K/T
FCC Fe has both higher activation energy EACT and D0 (holes larger in FCC).
BCC and FCC phase exist over limited range of T (at varying %C).
Hence, at same T, BCC diffuses faster due to lower EACT.
Cannot always have the phase that you want at the %C and T you want!
which is why this is all important.
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Diffusion coefficient: multicomponent
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Diffusion coefficient
Diffusion coefficient
Continuum Concept
Diffusion Coefficient
Probability of a jump is
Pj Pv Pm e E f kT
e Em kT
Diffusion Coefficient
Typical diffusion coefficients in silicon
-10
10
-5
10
-11
10
Diffusion coefficient, D (cm /sec)
10
2
Fe
Cu
-12
10
-7
10
Al
Au
-13 Ga
10
In
-8
B,P 10
Sb 0.6 0.7 0.8 0.9 1.0 1.1
As -1
-14 Temperature, 1000/T (K )
10
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Successive Diffusions
Successive Diffusions
The effective Dt product is given by
Dt eff Di ti
i
Di and ti are the diffusion coefficient and time for ith step
Assuming that the diffusion constant is only a
function of temperature.
The same type of diffusion is conducted (constant or
limited source)
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Interstitial diffusion
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Intercalation Oxide as Cathode in
Rechargeable Lithium Battery
LixCoO2
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E B
E B
* exp
kT
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Lithium
Cobalt
Oxygen
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Lithium
Cobalt
Oxygen
Single vacancy hop Divacancy hop
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Irreversible thermodynamics:
interstitial diffusion of one
component
J L
d
DL
dC
J DC
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Notation
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D L
Thermodynamic factor
C
N 2
Kinetic coefficient L
1 R t
(2d)tMvsk T i
i1
D DJ
Diffusion coefficient Thermodynamic
at 300 K factor
A. Van der Ven, G. Ceder, M. Asta, P.D. Tepesch, Phys Rev. B 64 (2001) 064112
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Interstitial diffusion
(two components)
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Diffusion in an alloy: substitutional diffusion
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