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Final Project: Amplifier Design Using Atf35143

The document describes the design of an amplifier using the ATF35143 transistor at 10 GHz. Key steps include: 1) Finding the DC operating point of 2V drain voltage and 15mA drain current. 2) Determining S-parameters and selecting a stable input match of 9.22dB gain. 3) Designing microstrip matching networks for the input and output matches. 4) Simulating the amplifier design through harmonic balance analysis and measuring the third order intercept point.

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316 views13 pages

Final Project: Amplifier Design Using Atf35143

The document describes the design of an amplifier using the ATF35143 transistor at 10 GHz. Key steps include: 1) Finding the DC operating point of 2V drain voltage and 15mA drain current. 2) Determining S-parameters and selecting a stable input match of 9.22dB gain. 3) Designing microstrip matching networks for the input and output matches. 4) Simulating the amplifier design through harmonic balance analysis and measuring the third order intercept point.

Uploaded by

Amo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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NUST

Final Project
Microwave Devices II
Amna Kamran
4/25/2017

AMPLIFIER DESIGN USING ATF35143


Introduction
In this project, an amplifier is being designed using the ATF35143 transistor at a frequency of 10
GHz.

Amplifier

An amplifier, electronic amplifier or (informally) amp is an electronic device that can increase
the power of a signal (a time-varying voltage or current). An amplifier functions by using electric
power from a power supply to increase the amplitude of the voltage or current signal. An
amplifier is effectively the opposite of an attenuator: while an amplifier provides gain, an
attenuator provides loss.

1. Circuit for finding DC point


The DC operating point (also known as bias point, quiescent point, or Q-point) is the DC steady-
state operating condition of a transistor, (with no AC input signal applied).

The following circuit has been designed to acquire the DC operating point at Vdc= 2V and a
drain current Id of 15mA.

Results
Following are the final operating conditions of the transistor and can be verified from the
characteristic curves shown below.

VDS=2V; I_probe=15mA; VGS=-0.575V


We try to verify the DC bias point we have selected by adding a load line to the graph with the
help of certain equations. The result is as follows:

Load Line
A load line is used in graphical analysis of nonlinear electronic circuits, representing the
constraint on other parts of the circuit placed on a non-linear device, like a diode or transistor.
2. Finding the S-Parameters
Now we find the S parameters at the assigned frequency by giving the VDS and VGS as
calculated before

The results for S parameters are;

Gain
Gmsg was calculated to be 12.22dB, so, I made the Gp circle for 9.22dB because if the value is near t the
Gmsg then that create problems and gamma_l and gamma_s get very close to the instable regions..
Now I check the stability by finding the unilateral figure of merit. It was seen that the device wasnt
unilateral infact it was bilateral. So input and output stability circles were drawn. The value of gamma_l
was selected in the stable region close to center which lead to gamma_in. That gave the value gamma_s
by adding certain equations. Both gamma_s and gamma_l lie in stable regions and can be verified from
figure shown below.
Result

Matching Circuits
Next we design the matching networks for selected gamma_l and gamma_s values. For
gamma_l we have the following design procedure. Using the smith chart tool, the gamma_l has
been matched using an open stub followed by a transmission line. The 50Ohms load is actually
taken to the position of gamma_l. The same procedure has been followed for matching
gamma_s as well. The choice of open stub was intentionally made as this is more practical.
Fixing the source at impedance of gamma_l and the load at 50ohm resistive. Then we let
the center move to our desired gamma_l. first an open stub is added followed by Tx line.

The result from smart component is:

Similarly for gamma_s,


The result is

The circuit using ideal transmission lines has been shown below however the final
implementation was done using Rogers substrate with a microstrip transmission line.

And the result for s parameters is this


With microstrip lines:

The result for S-parameters now is as follows, the behavior has shifted from ideal pattern
and now has some actual practical losses and hence reduction in values:

3. Providing the DC Biasing


We design the DC bias circuit so as to simulate a practical condition if we have batteries of
+10 or -10 Volts. The voltage divider circuit divides the voltage accordingly to provide -0.575
V on the source side whereas it provides 2 V on the load side. The circuits and results have
been clearly mentioned below:
S parameters have been shown. The results have only shifted a little from the previous
ones. It is important to note that S(2,1) is very much close to the gain, the circuit has been
designed for (9.22 dB) and hence verifies the result.

Vg and Vd for verification have been mentioned. These are the results of voltage probes
placed at respective places to verify whether they are providing the correct voltage or not.
The values shown in the marker are very much accurate.
4. Harmonic Balancing Simulation
Harmonic balance is a non-linear, frequency-domain, steady-state simulation. The voltage and
current sources create discrete frequencies resulting in a spectrum of discrete frequencies at
every node in the circuit. Harmonic balance simulation enables the multi-tone simulation of
circuits that exhibit inter-modulation frequency conversion. Nonlinear devices (transistors,
diodes, etc.) in Harmonic Balance are evaluated (sampled) in the time- domain and
converted to frequency-domain via the FFT.

From the figure above, the circuit shows the sweep that is run for the operating frequency
of 10 GHz. The first 10 harmonics have been shown in the figure below;
The value at marker -11.672 dBm shows that it is exactly equal to input power minus the
gain.

For HB sweep the results are shown in the figure below. The graph shows how our output
voltage changes as a result of variation of the input power (Pin).

The gain plot is observed as follows. The value at starting at Y-intercept shows the that it is
equal to the final S(2,1) which was calculated after matching and biasing. The value
decreases as we increase the input power.
5. Third Order Intercept
In telecommunications, a third-order intercept point (IP3 or TOI) is a measure for weakly
nonlinear systems and devices, for example receivers, linear amplifiers and mixers. It is based
on the idea that the device nonlinearity can be modeled using a low-order polynomial, derived
by means of Taylor series expansion.

The gain equation has been designed to plot the desired 1st and 3rd harmonic results. The
value is taken when the value of 3rd harmonic gets equal to that of the 1st. The OIC observed
as a final result is approximately (24,37).

6. Conclusion
According to the data sheet, the TOI point at 2 GHz with Vdc of 2 Volts and a drain
current of 15 mA is 21 dBm. With 1 GHz rise in frequency, there is a corresponding rise
of about 2 dBm in the TOI. From the previous graph, it is seen that the TOI point at 10
GHz is about 37 dBm. There should have been a rise of 16 dBm from the value at 2 GHz
which is the case here.

Also the S(2,1) is about is 8.33 dB which is very near to the designed gain of 9.22 dB. The
reduction is accounted for by the losses in the practical environment and use of
substrate based microstrip lines.

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