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0% found this document useful (0 votes)
924 views12 pagesEDC - Old Question Papers For Unit I & II
aktu_modi
Uploaded by
Deepak SahuCopyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF or read online on Scribd
/ 12
Printed Pages: 4 NEC-302
| (Following Paper ID and Roll No. to be filled in your
Answer Books)
Regular theory Examination(Odd Sem - 111), 2016-17
FUNDAMENTAL OF ELECTRONIC DEVICES
Time : 3 Hours Max. Marks : 100
Section - A
1 Attempt all parts. All parts carry equal marks. Write
answer of each part in short. (10x2=20)
a) Classify semiconductors on the basis of energy band
gap with the help of suitable diagram.
b) Calculate the density of GaAs, ifthe lattice constant
of GaAs is 5.65 A°. The atomic weights of Ga and
As are 69.7 and 74.9 g/mol, respectively.
c) Differentiate between phosphorescence and
florescence materials with examples.
d) What is population inversion? Write down the
difference between spontaneous emission and
stimulated emission for LASER action.
e) _ Explain the V-I characteristics of photodiode. What
is the significance of 3 and 4* quadrant operation
of photodiode?
302/12/2016/6720 a) [P.T.. NEC-302
) What is Fermi level? How does it depend on
temperature?
2) What is the physical significance of diffusion
length? How is it related with mobility of the
carrier?
h) What do you mean by reverse recovery transient?
State the significance of storage delay time.
i) Whatare degenerate semi-conductors? Draw their
energy band diagrams.
j) Calculate the maximum packing fraction of fee
lattice.
Section - B
Note: Attempt any five questions from this section
(5*10=50)
2. a) What do you mean by mobility of a carrier? How
does it depend on temperature, doping
concentrations and high field? Explain.
b) — Mobilities of electrons and holes in a sample of
intrinsic germanium at room temperature are 3900
cm?/v-sec and 1900 cm*/v-sec respectively. If the
electrons and hole densities are each equal to
2.5 x 10 per cm’, calculate germanium resistivity
and conductivity.
3. Discuss Transition and Diffusion capacitance in a p-n
junction diode. Ina p* - n junction reverse biased at 10V,
the capacitance is 10pF. If the doping is doubled and
reverse bias voltage is changed to 80V, what will be the
capacitance?
302/12/2016/6720 @)
NEC-302
a) _ Asilicon sample is doped with 10'° donors/cm’ and
has a hole life time of 0.5 usec. Assuming all the
donors to be ionized, determine
i) The photo generation rate, which will produce
4 x 10‘ excess EHP in steady state.
ii) The sample resistivity before and after
illumination.
iii) The percentage of conductivity due to
minority carriers.
Assume 44, = 1200 cm?/Vs, j1, = 400 em?/V-s,
T=300K.
b) What do you mean by drift and diffusion of carriers?
Find total current density generated due to both of
these transport mechanisms of carriers.
Using suitable diagrams, describe the principle and
operation of a Tunnel diode. Also discuss its V-I
characteristics.
Draw and explain the hole and electron flow in a p-n-p
Common Base BIT. State various currents flowing across
the device along with characteristics curves.
Show that the total depletion width in a p-n junction at
thermal equilibrium condition ean be given by
Where ¢ is the permittivity of semiconductor, V, is the
built-in potential of the junction, N, is the acceptor
302/12/2016/6720 3) [P.T.0. NEC-302
concentration in the p-type material, N, is the donor
concentration in the n-type material and q is the electronic
charge.
8. Derive an expression for diode current in an ideal p-n
junction diode.
9, What is Hall effect? Derive the relation between Hall
voltage and carrier concentration.
Section - C
Note: Attempt any two questions from this section
(2x15=30)
10. Write the special features of MESFET. Explain the
working of normally-offand normally-on MESFETS with
its characteristics.
11. a) Derive the expression for the equilibrium carrier
concentration for holes using Fermi Dirac
distribution function.
b) —ASi doped with 10” per cm? Boron atoms has fermi
level 0.36 eV above valence band at 300K. What is
the density of states in valence band?
12. Write short notes on :
a) LED materials.
b) GUNN Diode.
c) IMPATT Diode.
+444
302/12/2016/6720 @) Printed Pages: 4 449 NEC-302
(Following Paper ID and Roll No. to be filled in your
Answer Book)
_ Roll No
B.Tech.
(SEM. II) THEORY EXAMINATION. 2015-16
FUNDAMENTAL OF ELECTRONIC DEVICES.
[Time:3 hours] z [Total Marks:100]
Section-A
1. Attempt all parts. All parts carry equal marks. Write
answer of each part in short. (10*2=20)
(a) Differentiate Zener and avalanche mechanism on
the basis of doping, voltage and required depletion
region width and ionization effect.
(b) _Sisample is doped with 10 As atoms/em’. What
is equilibrium concentration of holes at 300 K?
Where is E, relative to E,? Draw the energy band
diagram to show the position of E, and E, Take
n,=1.5x10" cm",
(c) What is indirect band gap semiconductors.
(d) What is lattice scattering.
10000 (1) P.O Attempt any five questions from this section:
2.
10000 (2)
(e) How high electron mobility channel is created in
HEMT?
(Q) Which semiconductor parameters are measured
from Hall effect.
(g) State the principle of Invariance of Fermi level.
(h) Whats superiority of metal semiconductor diode
over conventional diode?
(i) Why3rd quadrant is preferred for photo detectors?
(i) What is figure of merit of photodiode?
+ Section-B
(5x10=50)
Calculate packing fraction and formation (with FCC) of
Si-unit cell. Also describe the energy band splitting in
Si crystal formation.
Discuss the temperature dependence of Fermi-Dirac
distribution function for semiconductor materials.
Derive the thermal equilibrium concentration of
electron.
Describe diffusion of carriers and derive the current
equation resulting due to this phenomenon. Also, derive
the Einstein relation
NEC-302
A semiconductor sample is exposed to a photonic
excitation for a long time(t<0). Under low level
injection, derive the equation governing the decay of
excess carrier and life time of carrier if the excitation
is removed at t=0.
Derive the expression of contact potential for PN
homojunetion diode. Boron is implanted into an n-type
Si sample (N,=10'cm), forming an abrupt junction of
square cross section with area=2x 10° cm?. Assume
acceptor concentration in p-type region is N=4*10!
cm’, Calculate V, Q°, E, and depletion region extension
on either side of junction at RT. (Given n=1.5*10"
om, &, = 11.8, & =8.85x10" Pom and KT=0.0259
eVatRT).
Describe in detail the operation of n-channel
enhancement MOSFET. Draw is physical structure and
I-V characteristic.
With the help of neat diagram describe the operation of
Impact ionization avalanche transit time diode.
Deduce the conditions of lasing. Describe the operation
of semiconductor LASER.
10000 @) PTO. Section-C
Attempt any two question in this section : (2*15=30)
10.
Mention ideally desired characteristics of (parameters)
area, doping, lifetime and width of base region in BJT.
‘With the help of neat diagram showing the various current
components of a PNP BST, describe emitter injection
efficiency, base transport factor and collector to base
amplification ratio. Describe how the base current
controls the operation of BJT.
Derive the ideal diode equation. Discuss the majority
carrier flow mechanism in neutral regions.
With the help two transistor analogy explain the operation
of PNPN diode. Also describe various turn-on
mechanisms used in SCR.
10000 (4) NEC-302 Printed Pages : 3
YA A NEC-302
(Following Paper ID and Roll No. to be filled in your Answer Book)
mot se (EEE
B. Tech.
(SEM. Il) (ODD SEM.) THEORY
EXAMINATION, 2014-15
FUNDAMENTAL OF ELECTRONIC DEVICES
Time : 3 Hours} [Total Marks : 100
Notes : Attempt all questions.
1 Attempt any four questions : 4x$=20
a Deseribe briefly lattice structure of silion
b. Si sample is doped with 102° As atoms/om?. what is
equilibrium concentration of Roles at 300 K? Where is
E¢ (Le. Fermi level). Draw the energy band diagram
to show the position of E; and Ey, Take
n= 15 * 10! eg,
Explain the effect of temperature and doping on mobility
d. Show that the minimum conductivity of ¢ semiconductor
sample occur when
n=; 7%, - What is the expression for minimum
‘conductivity.
Explain high field effect.
131313) 1 { Contd...
° 2 Attempt any two questions 2x10=20
a. Derive the expression for current density in terms of
diffusion length.
b. Explain the process of diffusion. Derive the expression
of continuity equation.
c. Explain absorption coefficient. A.0.46 micrometer thick
sample of Ga-As is illuminated with monochromatic light
of hy= 3eV. The absortion coefficient is 6 104/cm. the i
Power incident on the sample is 11 mW.
i Find the total energy absorbed by the sample per
second
ii Find the rate of excess thermal energy given up
by the electrons to the lattice before recombination.
3. Attempt any four questions : 4x5=20
a Write down the difference between Zener and avalanche
breakdown.
b. Derive the expression for contact potential of a p-n
junction,
¢. Define junction capacitance and its types.
Write a short note on :
i ‘Varactor diode
i, Switching diode
Consider a silicon abrupt P-N junction at 300 K with
N,=10!8 cc and Ny=10!5 cc. Taking
ni, = 1.5 x 10!c¢, calculate the value of contact
potential. Calculate the width of depletion region.
131313] 2 [ Contd...
4 Attempt any two questions. 2x10=20
Explain the working of HEMT and also discuss its
advantages.
Discuss briefly the principle of operation of depletion
and enhancement type MOSFET.
Explain ebers-moll model
5 Attempt any two questions : 10%2=20
131313]
Write a short note on:
i SCR
ii Gunn diode
Write a short note on:
i Double heterojunction LED
ii Working principle of laser.
Explain the working of solar cell. Discuss open circuit
output voltage characteristic and short circuit current
characteristic.
3 11175 Printed Pages—3 EEC301
B.Tech.
(SEM. III) ODD SEMESTER THEORY
EXAMINATION 2013-14
FUNDAMENTALS OF ELECTRONICS DEVICES
Time : 3 Hours Total Marks : 100
Note :— Attempt all questions. All questions carry equal marks.
1, - Attempt any four parts of the following : (5x4=20)
(@) Describe briefly the band structure of Si with suitable sketch.
(b) What do you understand by Miller indices ? How is it used
to describe a plane and direction in a erytsal ?
(©) Derive the expression for the effective mass of an electron
in an energy band in terms of wave vector.
(@) Calculate the volume density of Ga and As atoms with its
lattice constant 5.65 A° in G
