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Lab BJT Ce Confi

The document describes the procedure for plotting the transistor characteristics of a Common Emitter (CE) configuration using a BJT. Key components, theory of operation, circuit diagram, and procedures for obtaining input and output characteristics are provided. The input characteristics plot collector current (IC) versus base-emitter voltage (VBE) for different constant values of collector-emitter voltage (VCE). The output characteristics plot IC versus VCE for different constant values of base current (IB).

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Noman Rathore
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88 views5 pages

Lab BJT Ce Confi

The document describes the procedure for plotting the transistor characteristics of a Common Emitter (CE) configuration using a BJT. Key components, theory of operation, circuit diagram, and procedures for obtaining input and output characteristics are provided. The input characteristics plot collector current (IC) versus base-emitter voltage (VBE) for different constant values of collector-emitter voltage (VCE). The output characteristics plot IC versus VCE for different constant values of base current (IB).

Uploaded by

Noman Rathore
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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CHARACTERISTICS OF CE CONFIGURATION USING BJT

AIM:

To plot the transistor characteristics of CE configuration.

COMPONENTS REQUIRED:

Transistor

Resistor

Bread Board

Wires

THEORY:

A BJT is a three terminal two junction semiconductor device in which the


conduction is due to both the charge carrier. Hence it is a bipolar device and it amplifier
the sine waveform as they are transferred from input to output. BJT is classified into
two types NPN or PNP. A NPN transistor consists of two N types in between which a
layer of P is sandwiched. The transistor consists of three terminal emitter, collector and
base. The emitter layer is the source of the charge carriers and it is heartily doped with
a moderate cross sectional area. The collector collects the charge carries and hence
moderate doping and large cross sectional area. The base region acts a path for the
movement of the charge carriers. In order to reduce the recombination of holes and
electrons the base region is lightly doped and is of hollow cross sectional area.
Normally the transistor operates with the EB junction forward biased.
In transistor, the current is same in both junctions, which indicates that there is a
transfer of resistance between the two junctions. One to this fact the transistor is known
as transfer resistance of transistor.

PROCEDURE:

INPUT CHARACTERISTICS:

1. Connect the circuit as per the circuit diagram.


2. Set VCE, vary VBE in regular interval of steps and note down the corresponding I B
reading. Repeat the above procedure for different values of V CE.
3. Plot the graph: VBE Vs IB for a constant VCE.

OUTPUT CHARACTERISTICS:

1. Connect the circuit as per the circuit diagram.


2. Set IB, Vary VCE in regular interval of steps and note down the corresponding I C
reading. Repeat the above procedure for different values of I B.
3. Plot the graph: VCE Vs IC for a constant IB.

PIN DIAGRAM:

Specification: BC107/50V/0.1A,0.3W,300MHz
Bottom View BC107

E C
CIRCUIT DIAGRAM:
(0 30)mA
1 KW
- A +

(0 250) mA C
+ +
10 KW
+ A - (0-30)V
BC1071 V (0-30)V -
+ + B
V -
(0-30)V (0-1)V E
- -

MODEL GRAPH:

INPUT CHARACTERISTICS: OUTPUT CHARACTERISTICS:

A
mA

IC
IB
VCE = 0V
VCE = 5V
IB=60A

IB=40A

IB=20A

0
VBE(V) 0
VCE(V)
TABULAR COLUMN:

INPUT CHARACTERISTICS:

VCE=1V VCE=2V

VBE(V) IB(A) VBE(V) IB(A)

OUTPUT CHARACTERISTICS:
IB=20mA IB=40mA

VCE(V) IC(mA) VCE(V) IC(mA)

RESULT:
The transistor characteristics of a Common Emitter (CE) configuration
were plotted

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