FGD4536 360V, PDP IGBT

March 2011

FGD4536
360V, PDP IGBT
Features General Description
High Current Capability Using Novel Trench IGBT Technology, Fairchilds new series of
Low Saturation Voltage: VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDP
High Input Impedance applications where low conduction and switching losses are
essential.
Fast Switching
RoHS Compliant

Application
PDP System

D-PAK
G E

Absolute Maximum Ratings

Symbol Description Ratings Units
VCES Collector to Emitter Voltage 360 V
VGES Gate to Emitter Voltage 30 V
IC pulse(1)* Pulsed Collector Current @ TC = 25oC 220 A

Maximum Power Dissipation @ TC = 25oC 125 W

PD
Maximum Power Dissipation @ TC = 100oC 50 W
o
TJ Operating Junction Temperature -55 to +150 C
o
Tstg Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8 from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Units
o
RJC(IGBT) Thermal Resistance, Junction to Case - 1.0 C/W
o
RJA Thermal Resistance, Junction to Ambient - 62.5 C/W

Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1sec
* Ic_pluse limited by max Tj

2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGD4536 Rev. A
 FGD4536 360V, PDP IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGD4536 FGD4536TM TO252 380mm 16mm -

Electrical Characteristics of the IGBT TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A 360 - - V
BVCES Temperature Coefficient of Breakdown
VGE = 0V, IC = 250A - 0.4 - V/oC
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 100 A
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - 400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE 2.4 3.3 4.0 V
IC = 20A, VGE = 15V - 1.19 - V
IC = 30A, VGE = 15V - 1.33 - V
VCE(sat) Collector to Emitter
Saturation Voltage IC = 50A, VGE = 15V,
- 1.59 1.8 V
TC = 25oC
IC = 50A, VGE = 15V,
- 1.66 - V
TC = 125oC

Dynamic Characteristics
Cies Input Capacitance - 1295 - pF
VCE = 30V, VGE = 0V,
Coes Output Capacitance - 56 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 43 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 5 - ns
VCC = 200V, IC = 20A,
tr Rise Time - 20 - ns
RG = 5, VGE = 15V,
td(off) Turn-Off Delay Time Resistive Load, TC = 25oC - 41 - ns
tf Fall Time - 182 - ns
td(on) Turn-On Delay Time - 5 - ns
VCC = 200V, IC = 20A,
tr Rise Time - 21 - ns
RG = 5, VGE = 15V,
td(off) Turn-Off Delay Time Resistive Load, TC = 125oC - 43 - ns
tf Fall Time - 249 - ns
Qg Total Gate Charge - 47 - nC
VCE = 200V, IC = 20A,
Qge Gate to Emitter Charge VGE = 15V - 5.4 - nC
Qgc Gate to Collector Charge - 15 - nC

FGD4536 Rev. A 2 www.fairchildsemi.com

 FGD4536 360V, PDP IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

o 20V 12V o 20V 15V

TC = 25 C TC = 125 C 12V
200 200
15V 10V
Collector Current, IC [A]

Collector Current, IC [A]

150 150
10V

VGE = 8V
VGE = 8V
100 100

50 50

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics

Common Emitter 200 Common Emitter

200
VGE = 15V VCE = 10V
o o
Collector Current, IC [A]

TC = 25 C TC = 25 C
Collector Current, IC [A]

o o
TC = 125 C TC = 125 C
150 150

100 100

50 50

0 0
0 1 2 3 4 5 6 0 2 4 6 8 10 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
1.7 20
Common Emitter
Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

50A o
TC = 25 C
1.6
16
1.5 50A

1.4 12
30A
30A

1.3
8

1.2
IC = 20A
IC = 20A 4
1.1
Common Emitter
VGE = 15V
1.0 0
20 40 60 80 100 120 140 0 4 8 12 16 20
o
Collector-EmitterCase Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

FGD4536 Rev. A 3 www.fairchildsemi.com

 FGD4536 360V, PDP IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics

20 2400
Common Emitter Common Emitter
TC = 125 C
o VGE = 0V, f = 1MHz
Collector-Emitter Voltage, VCE [V]

2000 o
16 TC = 25 C
50A

Capacitance [pF]
1600
12 Cies
30A
1200
8
IC = 20A
800
Coes
4
400
Cres
0 0
0 4 8 12 16 20 0.1 1 10 30
Gate-Emitter Voltage, VGE [V] Collector-Emitter Voltage, VCE [V]

Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics

15 500

100
Gate-Emitter Voltage, VGE [V]

10s
12
Collector Current, Ic [A]

100s
200V 1ms
10 DC
9
VCC = 100V

1
6
Single Nonrepetitive
Pulse TC = 25oC
3 0.1 Curves must be derated
Common Emitter linearly with increase
TC = 25 C
o in temperature

0 0.01
0 10 20 30 40 50 0.1 1 10 100 1000
Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]

Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
100 1000

tf
tr
Switching Time [ns]

Switching Time [ns]

10 100
td(off)
td(on) Common Emitter
VCC = 200V, VGE = 15V Common Emitter
IC = 20A VCC = 200V, VGE = 15V
o IC = 20A
TC = 25 C o
o TC = 25 C
TC = 125 C o
TC = 125 C
1 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [ ] Gate Resistance, RG [ ]

FGD4536 Rev. A 4 www.fairchildsemi.com

 FGD4536 360V, PDP IGBT
Typical Performance Characteristics

Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
100 400

tr
tf
Switching Time [ns]

Switching Time [ns]

100

10
td(on)

Common Emitter td(off)

Common Emitter
VGE = 15V, RG = 5 VGE = 15V, RG = 5
o o
TC = 25 C TC = 25 C
o o
TC = 125 C TC = 125 C
1 10
10 20 30 40 50 10 20 30 40 50
Collector Current, IC [A] Collector Current, IC [A]

Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current
5000 1000
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
1000 o
TC = 25 C Eoff
Switching Loss [uJ]
Switching Loss [uJ]

o 100
TC = 125 C
Eoff

Eon
100
10 Common Emitter
Eon VGE = 15V, RG = 5
o
TC = 25 C
o
TC = 125 C

10 1
0 10 20 30 40 50 10 20 30 40 50
Gate Resistance, RG [ ] Collector Current, IC [A]

Figure 17. Turn off Switching SOA Characteristics

500

100
Collector Current, IC [A]

10

Safe Operating Area

o
VGE = 15V, TC = 125 C

0.1
1 10 100 500
Collector-Emitter Voltage, VCE [V]

FGD4536 Rev. A 5 www.fairchildsemi.com

 FGD4536 360V, PDP IGBT
Typical Performance Characteristics

Figure 18.Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5

0.2

0.1
0.1 PDM
0.05
0.02 t1
0.01 t2
single pulse Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC

0.01 -5 -4 -3 -2 -1
10 10 10 10 10
Rectangular Pulse Duration [sec]

FGD4536 Rev. A 6 www.fairchildsemi.com

 FGD4536 360V, PDP IGBT
Mechanical Dimensions

D-PAK

Dimensions in Millimeters

FGD4536 Rev. A 7 www.fairchildsemi.com

 FGD4536 360V, PDP IGBT
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Semiconductor. The datasheet is for reference information only.
Rev. I51

FGD4536 Rev. A 8 www.fairchildsemi.com