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NPN Silicon Planar High Voltage Transistor BD115 TO-39 Metal Can Package

This document provides specifications for the BD115 NPN silicon planar high voltage transistor manufactured by Continental Device India Limited. Key specifications include: - Maximum ratings of 180V for collector-emitter voltage, 245V for collector-base voltage, and 5V for emitter-base voltage. - Electrical characteristics including a typical current gain of 60, collector-emitter saturation voltage of 3.5V, and transition frequency of 145MHz. - The transistor comes in a standard TO-39 metal can package measuring 8.5-9.39mm by 7.74-8.5mm. It has a thermal resistance of 25°C/W and is RoHS compliant.

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0% found this document useful (0 votes)
323 views4 pages

NPN Silicon Planar High Voltage Transistor BD115 TO-39 Metal Can Package

This document provides specifications for the BD115 NPN silicon planar high voltage transistor manufactured by Continental Device India Limited. Key specifications include: - Maximum ratings of 180V for collector-emitter voltage, 245V for collector-base voltage, and 5V for emitter-base voltage. - Electrical characteristics including a typical current gain of 60, collector-emitter saturation voltage of 3.5V, and transition frequency of 145MHz. - The transistor comes in a standard TO-39 metal can package measuring 8.5-9.39mm by 7.74-8.5mm. It has a thermal resistance of 25°C/W and is RoHS compliant.

Uploaded by

Akhilrajscribd
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IS/ISO 9002

Continental Device India Limited Lic# QSC/L- 000019.2

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115

TO-39
Metal Can Package

ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)

DESCRIPTION SYMBOL VALUE UNITS


Collector Emitter Voltage VCEO 180 V

Collector Emitter Voltage (RBE<1K VCER 245 V
Collector Base Voltage VCBO 245 V
Emitter Base Voltage VEBO 5 V
Collector Current Continuous IC 150 mA
Peak ICM 200 mA
Power Dissipation @ Ta=50C PD 6 W
Storage Temperature Tj, Tstg -55 to +200 C

THERMAL RESISTANCE
Junction to Ambient Rth(j-a) 25 C/W

ELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise)

VALUE
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS

Collector Emitter Breakdown Voltage BVCEO IC=1mA,IB=0 180 V


Collector Base Breakdown Current BVCBO IC=100A, IE=0 245 V
Emitter Base Breakdown Voltage BVEBO IE=100A, Ic=0 5 V
Collector Cutoff Current ICBO VCB=200V, IE=0 15 nA
VCB=200V,IE=0,Tj=200C 550 A
Emitter Cutoff Current IEBO VEB=5V, IC=0 100 A
Collector Emitter Saturation Voltage VCE(Sat) * IC=100mA,IB=10mA 3.5 V
Base Emitter On Voltage VBE(on) * IC=50mA,VCE=100V 1.0 V
DC Current Gain hFE IC=50mA,VCE=100V 22 60

DYNAMIC CHARACTERISTICS

Transition Frequency fT IC=30mA, VCE=100V 145 MHz


f=20MHz
Collector Base Time Constant rb'Cc IE=10mA, VCB=10V, 30 100 ps
f=10MHz
Feedback Capacitance Cre VCE=20V, IC=10mA, 3.5 pF
f=1.0MHz
s, Duty Cycle <2%
*Pulse Test: Pulse Width <300

Continental Device India Limited Data Sheet Page 1 of 3


BD115

TO-39
Metal Can Package

TO-39 Metal Can Package

A DIM MIN MAX


B A 8.50 9.39
B 7.74 8.50
C 6.09 6.60

C
D 0.40 0.53
E 0.88
E

All dimensions are in mm


F 2.41 2.66
G 4.82 5.33
H 0.71 0.86
K

J 0.73 1.02
K 12.70
L 42 DEG 48 DEG

2 PIN CONFIGURATION
1 1. EMITTER
F

3 2. BASE
3. COLLECTOR
H
L
2 1
3
J

Packing Detail
PACKAGE STANDARD PACK INNER CARTON BOX OUTER CARTON BOX
Details Net Weight/Qty Size Qty Size Qty Gr Wt
TO-39 500 pcs/polybag 540 gm/500 pcs 3" x 7.5" x 7.5" 20K 17" x 15" x 13.5" 32K 40 kgs

Continental Device India Limited Data Sheet Page 2 of 3


Notes BD115

TO-39
Metal Can Package

Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and
on the CDIL Web Site/CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for
inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or
use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not
designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual
Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or
applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).

CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.

CDIL is a registered Trademark of


Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail [email protected] www.cdil.com

BD115Rev110301D

Continental Device India Limited Data Sheet Page 3 of 3


This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

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