Chapter 4: Asymmetrical Pulse Width Modulation Control
Chapter 4: Asymmetrical Pulse Width Modulation Control
Chapter 4
108
Chapter 4: Asymmetrical Pulse Width Modulation Control
109
Chapter 4: Asymmetrical Pulse Width Modulation Control
Io
DA
SA
CA L1 L2 1:n Dr1 Dr3
+
2Vd + iL1 + iL2
vin Vo
C1 vc1
- Cf RL
- -
CB Tr
SB DB Dr2 Dr4
(a)
Io
D1 S3 D3
S1
L1 L2 1:n Dr1 Dr3
+
Vd + iL1 + iL2
CDC vin Vo
C1 vc1
- Cf RL
- -
Tr
S2 D2
S4 D4 Dr2 Dr4
(b)
Fig. 4.1: Circuit diagrams of (a) half-bridge and (b) full-bridge LCL-T RC.
respectively and it is shown that the H is independent of load only if the converter is
operated at n = 1 , given by (3.8). Therefore, the method using variation of switching
frequency to control the output can not be applied - or else current source behaviour
will be lost. Besides, the plots of Fig. 3.2(a) show that H is relatively flat in the
vicinity of the operating point n = 1 . Thus, the variation of switching frequency will
not provide wide conversion range and regulation against large input voltage
variations. Therefore fixed-frequency control should be used. Additionally, if =1, vin
and iL1 are in phase resulting in the lowest conduction loss in the switches. Therefore,
for the subsequent analysis of LCL-T RC with APWM control, it is assumed that the
converter operates at n = 1 and =1.
Figure 4.2 shows switch gate pulses and the resulting waveform vin with
APWM control. The dead-gap between the complementary switches (SA, SB in half-
bridge and S1, S2 and S3, S4 in full-bridge), required to discharge MOSFET output
capacitance and to avoid shoot-through, is assumed to be very small and is neither
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Chapter 4: Asymmetrical Pulse Width Modulation Control
SA (S1,S4) t
SB (S2,S3) t
2Vd (1-D)
vin t
-2Vd D
Ts
DTs
Fig. 4.2: Idealized waveforms of gate pulses for the switches and vin with APWM
control. The switches mentioned in the bracket correspond to the full-bridge
converter.
explicitly shown in Fig. 4.2 nor considered in the analysis. Amplitude of the
fundamental component of vin can be derived as,
4V d
V in1 = sin (D ) (4.1)
where D is the duty-cycle defined in Fig. 4.2. Thus Vin1 can be controlled from zero to
its maximum value by changing D. Assuming that the power is transferred to the
output only by the fundamental component of source excitation, H and M with
APWM control can be approximated as,
8
H = sin (D ) (4.2)
n =1
2
8 1
M n =1
= sin (D ) (4.3)
2 Q
111
Chapter 4: Asymmetrical Pulse Width Modulation Control
L1=L L2=L
+
iL1 iL2 +
+
vin C1=C vc vo
- -
-
112
Chapter 4: Asymmetrical Pulse Width Modulation Control
that the circuit can have four operating modes depending on the steady-state
waveforms of vin and iL1, which, in turn, depend on D and Q. Each mode of operation
is characterized by the different circuit waveforms representing different device
conduction sequence, thereby creating different conditions during the device
switching. The converters operation in different modes is described for the half-
bridge converter [Fig. 4.1(a)] in the following paragraphs. However, the conducting
devices during various sub-intervals in full-bridge circuit [Fig. 4.1(b)] are also marked
inside the respective figures for the completeness.
4.2.1 Mode-I
Steady-state waveforms of vin and iL1 in these modes of operation are shown in
Fig. 4.4. This mode of operation mainly occurs when D0.5. Before t=to, switch SB
was conducting. At t=to, SB is turned off and gate pulse is applied to SA. Since iL1 is
negative at this instant, it flows through DA. At t=t1, DA turns off naturally at zero
current and iL1 now flows through SA. Similarly in the next half cycle, SA is turned off
at t=t2 and gate pulse is applied to SB. Since iL1 is positive at this instant, flows
through DB. At t=t3, DB turns off naturally at zero current and iL1 flows through SB. At
t=t4, SB is turned off and SA is turned on once again marking the beginning of the next
cycle. Thus in this mode, the device conduction sequence is such that the
vin
iL1
DB( D2,D3 )
DA( D1,D4 )
SA( S1,S4 ) SB( S2,S3 )
t0 t1 t2 t3 t4
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Chapter 4: Asymmetrical Pulse Width Modulation Control
anti-parallel diodes conduct prior to the switch conduction resulting in ZVS turn-on
for both the switches.
4.2.2 Mode-II
Steady-state waveforms of vin and iL1 in this mode of operation are shown in
Fig. 4.5. This mode of operation can also occur when D0.5. Before t=to, diode DB
was conducting. At t=to gate pulse is applied to SA. Diode DB turns off and iL1 flows
through SA. At t=t1, iL1 reverses its direction and becomes negative. SA turns off at zero
current and iL1 is transferred to DA until t=t2 when gate pulse is applied to SB. At this
instant, diode DA turns off and iL1 is carried by SB. At t=t3, SB is turned off naturally
with zero current as iL1 reverses its direction and starts flowing through DB. At t=t4, SA
is turned on once again marking the beginning of the next cycle. Thus in this mode,
the device conduction sequence is such that the anti-parallel diodes conduct after the
switch conduction resulting in ZCS turn-off for both the switches.
4.2.3 Mode-III
Steady-state waveforms of vin and iL1 in this mode of operation are shown in
Fig. 4.6. Similar to Mode-I, the device conduction sequence in this mode results in
iL1
vin
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Chapter 4: Asymmetrical Pulse Width Modulation Control
vin
iL1
DA( D1,D4 ) SA DB
( S1,S4 ) SB( S2,S3 ) ( D2,D3 )
SB( S2,S3 )
DB( D2,D3 )
t0 t1 t2 t3 t3a t3b t4
ZVS turn-on of all the switches. The difference is that, iL1 oscillates across zero twice
during the time interval between t=t2 and t=t4 causing SB and DB to conduct twice
during this interval. At t=t2, SA is turned off and gate pulse is applied to SB. Since iL1 is
positive at this instant, it flows through DB until t=t3 when it reverses and starts
flowing through SB. Current iL1 reverses its direction at t=t3a causing DB to conduct
and once again at t=t3b causing SB to conduct. The additional commutations of SB and
DB in this mode of operation are ideally loss-less since they occur under zero current
and zero voltage condition. At t=t4, SA is turned on once again marking the beginning
of the next cycle.
4.2.4 Mode-IV
The steady-state waveforms of vin and iL1 in this mode of operation are shown
in Fig. 4.7. Before t=to, diode DB was conducting. At t=to, switch SA is turned on,
which turns DB off. The current iL1 flows through SA until t=t2 when it is turned off
and gate pulse is applied to SB. Since iL1 is positive at this instant, it flows through DB.
At t=t2, DB turns off naturally at zero current and iL1 now flows through SB. At t=t3a,
iL1 reverses direction once again causing DB to conduct until t=t4 when SA is turned on
marking the beginning of the next cycle. As compared to Mode-II, in Mode-IV iL1
does not reverse its direction while gate pulse is applied to SA. This causes DB to
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Chapter 4: Asymmetrical Pulse Width Modulation Control
vin
iL1
conduct twice during the time interval t=t2 to t=t4. Also, diode DA never conducts in
this mode. Observe that DB conducts prior to the conduction of SB, resulting in ZVS
turn-on condition for SB. However, SA operates under hard-switching condition.
4.2.5 Discussion
The waveforms of vin and iL1 in different operating modes shown in Fig. 4.4 to
Fig. 4.7 along with the marked conducting devices during various sub-intervals enable
the identification of conditions experienced by various switches and diodes during
switching. This, in turn, enables the identification of desired operating modes, in
which switches and diodes operate under the most favourable switching conditions.
Table 4.1 summarizes the switching conditions for the switches and diodes in the four
operating modes described above. In Mode-I and Mode-III, anti-parallel diode of each
switch conducts prior to the conduction of the switch resulting in ZVS turn-on. Turn-
on snubbers are eliminated. Slower anti-parallel diodes and loss-less capacitor turn-
off snubber can be used. Body-drain diode and output capacitance of power MOSFET
can therefore be used reducing component count. In Mode-II, all the switches are
turned off at zero current. However, when a switch is turned on the anti-parallel diode
of the other switch in the leg is conducting. Therefore, fast anti- parallel diodes and
lossy (or complicated energy recovery) turn-on snubbers are required. Body-drain
116
Chapter 4: Asymmetrical Pulse Width Modulation Control
Table 4.1: Switching conditions for the switches and diodes in half-bridge LCL-T RC
in various operation modes with APWM control.
Switch SA Switch SB Diode DA Diode DB
Mode
turn-on turn-off turn-on turn-off turn-on turn-off turn-on turn-off
I ZV, ZC FV, FC# ZV, ZC FV, FC# FV, FC# ZV, ZC FV, FC# ZV, ZC
II FV, FC ZV, ZC FV, FC ZV, ZC ZV, ZC FV, FC ZV, ZC FV, FC
# # # FV, FC# (t2- t3) ZV, ZC (t2- t3)
III ZV, ZC FV, FC ZV, ZC FV, FC FV, FC ZV, ZC
ZV, ZC (t3a- t3b) ZV, ZC (t3a- t3b)
FV, FC (t2- t3) ZV, ZC (t2- t3)
IV FV, FC FV, FC ZV, ZC ZV, ZC NC NC
ZV, ZC (t3a- t4) FV, FC (t3a- t4)
ZV: zero-voltage, ZC: Zero-current, FV: Finite voltage, FC: Finite current, NC: No conduction
#
: Loss-less capacitor turn-off snubber can be used to reduce rate of rise of voltage and switching loss during
switch turn-off.
diode of MOSFET cannot be used. Additionally, the switches carry diode reverse-
recovery current and the discharge current of MOSFET output capacitance at turn-on,
causing more losses. In Mode-IV, switch SB operates with favourable switching
conditions since DB conducts prior to its conduction. However, SA operates with hard-
switching condition.
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Chapter 4: Asymmetrical Pulse Width Modulation Control
iL1 iL1
vin
vin
t t
(a) (b)
vin
vin
iL1 iL1
t
t
(c) (d)
Fig. 4.8: Waveforms of vin and iL1 in steady-state as the converter makes transition
from one mode into another. Boundary between (a) Mode-I and Mode-IV, (b) Mode-
II and Mode-IV, (c) Mode-III and Mode-IV and (d) Mode-I and Mode-III.
or Mode-III for all the values of D in the range 0 to 0.5 and down to the no-
load operation.
2. Under the symmetrical input voltage waveform (that is, D=0.5), it is seen from
the D-Q plane and the description of various operating modes, that iL1 lags vin
for Q>0.81 whereas iL1 leads vin for Q<0.81. This behaviour is not predicted
by the fundamental frequency ac analysis, which suggests that iL1 and vin are
always in phase. Figure 4.10 shows the variation of phase angle ( ) between
iL1 and vin for operation at D=0.5. A positive value of means iL1 is leading
vin, and vice versa.
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Chapter 4: Asymmetrical Pulse Width Modulation Control
Q=0.81
0.5
Mode-II Mode-I
0.4
Mode-IV
0.3
Mode-III
D
0.2
0.1
Q=1.07
0.0
0 1 2 3 4 5 6
Q
Fig. 4.9: D-Q plane of APWM controlled LCL-T RC showing the regions of different
modes of operation.
30
20
10
0
-10
-20
0 1 2 3 4 5
Q
Fig. 4.10: Variation of as a function of Q for operation at D=0.5 in APWM
controlled LCL-T RC.
119
Chapter 4: Asymmetrical Pulse Width Modulation Control
0.5
0.4
ZVS
0.3
ZVS
D
0.2
0.1
0.0
0 1 2 3 4 5 6
Q
Fig. 4.11: Regions of ZVS operation of all the switches in LCL-T RC with APWM
(solid line) and CM control (broken line).
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Chapter 4: Asymmetrical Pulse Width Modulation Control
n 2 o L1 n 2 Z n
Q FL = = (4.7)
RL ,max RL ,max
The expression for n, L1, L2 and C1 are derived in terms of converters terminal
parameters as follows:
2 I o, max RL ,max Q FL
n= (4.8)
8 Vd ,min sin (Dmax )
2
32 Vd ,min sin (Dmax )
2
L1 = L2 = (4.9)
5 I o ,max 2 R L ,max QFL f s
2
3 I o, max R L , max Q FL
C= (4.10)
128 Vd , min 2 sin 2 (D max ) f s
The design of the converter is thus governed by the selection of QFL. The
value of QFL is shown to have direct effect on the size of the reactive components,
judged by the kVA/kW rating of the RIN (see Fig. 3.3). Additionally, the choice of QFL
also governs the operation of converter in different modes with APWM control as
described in the previous sections.
It can be observed from the D-Q plane of Fig. 4.9 that if the converter is
designed in such a way that the value of QFL is greater than 1.07, then the converter
can operate only in Mode-I or Mode-III for all the values of D in the range 0 to 0.5
and down to the no-load operation. In this way, the operation in Mode-II or Mode-IV
can be avoided and ZVS operation of all the switches is ensured. However, this choice
of QFL is different than the optimum value of QFL=Qopt=0.81. The kVA/kW rating of
the resonant tank first decreases as Q is increased, reaches minimum value at Q=Qopt
and then again increases as Q is increased further (see Fig. 3.3). However, the
increase in kVA/kW rating with increase in Q above Q=Qopt is not as steep as the fall
in kVA/kW rating with increase in Q below Q=Qopt. Therefore, increasing Q slightly
from Qopt does not result in large penalty in terms of size. Further, also does not
increase significantly with increase in Q (see Fig. 4.10). Therefore for the same output
power, iL1 also does not increase significantly. Thus the converter design with QFL >
1.07 does not significantly increase the size of the RIN and losses in semiconductors
and it ensures ZVS operation of all the switches over the entire range of operation.
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Chapter 4: Asymmetrical Pulse Width Modulation Control
Table 4.2: Specifications and design parameters of the prototype APWM controlled
LCL-T RC. The respective values actually used in the prototypes are given in the
brackets.
Parameter Value
Design specifications
2Vd (V) 300
Io,max (A) 1
RL,max () 500
Dmax 0.5
fs (kHz) 100
Calculated component values
QFL 1.2
N1/N2 0.2025 (0.2)
C (nF) 64.72 (66)
L1, L2 (H) 39.18 (38.02)
fs (kHz) 100
122
Chapter 4: Asymmetrical Pulse Width Modulation Control
(a) (b)
(c) (d)
Fig. 4.12: Experimental waveforms of vin [trace (1), 20 V/div] and iL1 [trace (2), 0.5
A/div in (a), (c) and 1 A/div in (b), (d)] in APWM controlled LCL-T RC (a) Mode-I
(D=0.5, Q=1.2), (b) Mode-II (D=0.5, Q=0.3), (c) Mode-III (D=0.2, Q=1.2) and (d)
Mode-IV (D=0.4, Q=0.6). X-scale: 2.5 s/div.
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Chapter 4: Asymmetrical Pulse Width Modulation Control
(a) (b)
Fig. 4.13: Experimental waveforms of vin [trace (1), 100 V/div] and iL1 [trace (2), 5
A/div] at Q=1.2. (a) Mode-I (D=0.5) and (b) Mode-III (D=0.2). X-scale: 2.5 s/div.
1.2
RL = 500
1.0 RL ~ 0
Theory
0.8
I0 (A)
0.6
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5
D
Fig. 4.14: Open-loop control characteristics of prototype APWM controlled LCL-T
RC.
independent of load resistance (except for a small increase owing to the decrease in
circuit drops from full-load to no-load) at all values of D.
The conversion efficiency of the prototype is measured by varying D to
change the output power under different loading conditions at 300 V input dc voltage.
Plots of experimental efficiency as a function of the output power are shown in Fig.
4.15. The full-load conversion efficiency of the prototype is measured to be 0.94 and
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Chapter 4: Asymmetrical Pulse Width Modulation Control
1.0
0.9
0.8 RL = 500
Efficiency
RL = 236
0.7 RL = 94
0.6
0.5
100 200 300 400 500
Po (W)
it remains above 0.9 for 100 W 500 W output power range at Q=QFL. Out of total 32
W power loss in the prototype operating at 500 W, a major portion (~20 W) is
estimated to occur in the MOSFETs and diodes. The rest of the losses can be
attributed largely to the core and winding loss in transformer and resonant inductor.
4.6 Conclusion
Fixed-frequency control methods need to be used with RICs since the
topology behaves as a current-source only when operated at a particular frequency.
Feasibility of APWM control to RICs is exemplified in this chapter with LCL-T RC.
Four distinct operating modes are identified having different circuit waveforms
representing different device conduction sequence, thereby creating different
conditions during the device switching. The mode-boundaries are obtained and
plotted on the D-Q plane. A region on the D-Q plane is identified for the converter
design wherein all the switches operate with ZVS. It is observed that APWM control
allows ZVS operation over a wider range than CM control. Experimental results on a
prototype half-bridge 500 W, 100 kHz converter demonstrated the existence of
various operating modes and the performance of APWM controlled LCL-T RC.
125