FDD6030L

March 2015

FDD6030L
30V N-Channel PowerTrench MOSFET
General Description Features
This N-Channel MOSFET is produced using Fairchild 12 A, 30 V RDS(ON) = 14.5 m @ VGS = 10 V
Semiconductors advanced PowerTrench process that
has been especially tailored to minimize the on state RDS(ON) = 21 m @ VGS = 4.5 V
resistance and yet maintain low gate charge for
superior switching performance. Low gate charge

Applications Fast Switching Speed

DC/DC converter High performance trench technology for extremely

Motor Drives low RDS(ON)

D
G
G
S
D-PAK
TO-252
(TO-252) S

Absolute Maximum Ratings o

TA=25 C unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage 20 V
ID Continuous Drain Current @TC=25C (Note 3) 50 A
@TA=25C (Note 1a) 12
Pulsed (Note 1a) 100
PD Power Dissipation @TC=25C (Note 3) 56 W
@TA=25C (Note 1a) 3.2
@TA=25C (Note 1b) 1.5
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +175 C

Thermal Characteristics
RJC Thermal Resistance, Junction-to-Case (Note 1) 2.7 C/W
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45
RJA (Note 1b) 96

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape width Quantity
FDD6030L FDD6030L D-PAK (TO-252) 13 16mm 2500 units

2003 Fairchild Semiconductor Corporation FDD6030L Rev. 2.3

 FDD6030L
Electrical Characteristics TA = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 12A 100 mJ
IAS Drain-Source Avalanche Current 12 A

Off Characteristics
BVDSS DrainSource Breakdown Voltage VGS = 0 V, ID = 250 A 30 V
BVDSS Breakdown Voltage Temperature ID = 250 A,Referenced to 25C 24 mV/C
TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 A
IGSS GateBody Leakage VGS = 20 V, VDS = 0 V 100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 1 1.9 3 V
VGS(th) Gate Threshold Voltage ID = 250 A,Referenced to 25C 5 mV/C
TJ Temperature Coefficient
RDS(on) Static DrainSource VGS = 10 V, ID = 12 A 7.7 14.5 m
OnResistance VGS = 4.5 V, ID = 10 A 9.9 21
VGS = 10 V, ID = 12 A,TJ=125C 11.4 25
ID(on) OnState Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 10 V, ID = 12 A 47 S

Dynamic Characteristics
Ciss Input Capacitance 1230 pF
VDS = 15 V, V GS = 0 V,
Coss Output Capacitance 325 pF
f = 1.0 MHz
Crss Reverse Transfer Capacitance 150 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.5 pF

Switching Characteristics (Note 2)

td(on) TurnOn Delay Time 10 19 ns
tr TurnOn Rise Time VDD = 15 V, ID = 1 A, 7 13 ns
td(off) TurnOff Delay Time VGS = 10 V, RGEN = 6 29 46 ns
tf TurnOff Fall Time 12 21 ns
Qg Total Gate Charge 13 28 nC
VDS = 15V, ID = 12 A,
Qgs GateSource Charge 3.5 nC
VGS = 5 V
Qgd GateDrain Charge 5.1 nC

FDD6030L Rev. 2.3

 FDD6030L
Electrical Characteristics TA = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

DrainSource Diode Characteristics and Maximum Ratings
IS Maximum Continuous DrainSource Diode Forward Current 2.7 A
VSD DrainSource Diode Forward Voltage VGS = 0 V, IS = 2.7 A (Note 2) 0.76 1.2 V
trr Diode Reverse Recovery Time IF = 12 A, diF/dt = 100 A/s 24 nS
Qrr Diode Reverse Recovery Charge 13 nC
Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) RJA = 45C/W when mounted on a b) RJA = 96C/W when mounted

2
1in pad of 2 oz copper on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

PD
3. Maximum current is calculated as: R DS(ON)

where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A

FDD6030L Rev. 2.3

 FDD6030L
Typical Characteristics

100 1.8
VGS = 10.0V 4.5V
VGS = 3.5V

DRAIN-SOURCE ON-RESISTANCE
6.0V 5.0V
80 4.0V 1.6

RDS(ON), NORMALIZED
ID, DRAIN CURRENT (A)

1.4 4.0V
60
4.5V
3.5V 5.0V
1.2
40 6.0V
10.0V
1
20
3.0V

0.8
0 0 20 40 60 80
0 0.5 1 1.5 2 2.5 3 ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage

1.6 0.03
ID = 12A
ID = 6A
DRAIN-SOURCE ON-RESISTANCE

VGS = 10V
RDS(ON) , ON-RESISTANCE (OHM)

1.4 0.025
RDS(ON), NORMALIZED

1.2 0.02

o
TA = 125 C
1 0.015

TA = 25oC
0.8 0.01

0.6 0.005
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with

withTemperature Gate-to-Source Voltage

1000
90 VGS = 0V
VDS = 5V TA =-55oC
IS, REVERSE DRAIN CURRENT (A)

100
75 o
o TA = 125 C
125 C
ID, DRAIN CURRENT (A)

10
60 25oC
1
25oC -55oC
45
0.1

30
0.01

15 0.001

0 0.0001
1.5 2 2.5 3 3.5 4 4.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

FDD6030L Rev. 2.3

 FDD6030L
Typical Characteristics

10 1800
f = 1MHz
ID = 12 A VDS = 10V VGS = 0 V
20V
VGS, GATE-SOURCE VOLTAGE (V)

1500
8
Ciss

CAPACITANCE (pF)
1200
15V
6

900

4
600
Coss
2
300

Crss
0 0
0 5 10 15 20 25 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

1000 100
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RDS(ON) LIMIT 100s RJA = 96C/W
100 80
TA = 25C
ID, DRAIN CURRENT (A)

1ms
10ms
10 100ms 60
1s
10
1 DC 40
VGS = 4.5V
SINGLE PULSE
0.1 RJA = 96oC/W 20
TA = 25oC

0.01 0
0.1 1 10 100 0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation

1
TRANSIENT THERMAL RESISTANCE

D = 0.5
r(t), NORMALIZED EFFECTIVE

0.2 R JA (t) = r(t) * R JA

0.1 0.1 R JA = 96 C/W
0.05

0.02 P(pk)
0.01 0.01
t1
t2

T J - T A = P * R JA (t)
0.001 SINGLE PULSE
Duty Cycle, D = t 1 / t2

0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDD6030L Rev. 2.3

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
No Identification Needed Full Production
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I74

Fairchild Semiconductor Corporation www.fairchildsemi.com

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FDD6030L