High-Performance Silicon-Gate CMOS: Semiconductor Technical Data
High-Performance Silicon-Gate CMOS: Semiconductor Technical Data
High-Performance Silicon-Gate CMOS: Semiconductor Technical Data
!
!
! J SUFFIX
CERAMIC PACKAGE
20
High–Performance Silicon–Gate CMOS 1
CASE 732–03
2 18 PIN ASSIGNMENT
A1 YA1
4 16 ENABLE A 1 20 VCC
A2 YA2
A1 2 19 ENABLE B
6 14 YB4 3 18 YA1
A3 YA3
A2 4 17 B4
8 12
A4 YA4 YB3 5 16 YA2
DATA NONINVERTING
INPUTS 11 9 OUTPUTS A3 6 15 B3
B1 YB1
YB2 7 14 YA3
13 7 A4 8 13 B2
B2 YB2
YB1 9 12 YA4
15 5
B3 YB3 GND 10 11 B1
17 3
B4 YB4
FUNCTION TABLE
PIN 20 = VCC Inputs Outputs
1 PIN 10 = GND
OUTPUT ENABLE A Enable A,
ENABLES 19 Enable B A, B YA, YB
ENABLE B
L L L
L H H
H X Z
Z = high impedance
2/97
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Symbol
ÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Parameter
DC Supply Voltage (Referenced to GND)
Value
– 0.5 to + 7.0
Unit
V
This device contains protection
circuitry to guard against damage
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
due to high static voltages or electric
Vin DC Input Voltage (Referenced to GND) – 1.5 to VCC + 1.5 V fields. However, precautions must
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vout
ÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Iin
ÎÎÎ
DC Output Voltage (Referenced to GND)
ÎÎÎÎÎÎ
ÎÎÎ
DC Input Current, per Pin
– 0.5 to VCC + 0.5
± 20
V
mA
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
cuit. For proper operation, Vin and
Iout DC Output Current, per Pin ± 35 mA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Vout should be constrained to the
ICC DC Supply Current, VCC and GND Pins ± 75 mA v
range GND (Vin or Vout) VCC. v
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Unused inputs must always be
PD Power Dissipation in Still Air, Plastic or Ceramic DIP† 750 mW
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
tied to an appropriate logic voltage
SOIC Package† 500 level (e.g., either GND or VCC).
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
SSOP or TSSOP Package† 450
Unused outputs must be left open.
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Tstg Storage Temperature – 65 to + 150 _C
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
TL Lead Temperature, 1 mm from Case for 10 Seconds _C
(Plastic DIP, SOIC, SSOP or TSSOP Package) 260
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
(Ceramic DIP) 300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
SSOP or TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS
ÎÎÎ
ÎÎÎ Parameter Min Max Unit
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCC
ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Vin, Vout
ÎÎÎ ÎÎÎ
ÎÎÎ
DC Supply Voltage (Referenced to GND)
ÎÎÎ
ÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
2.0
0
6.0
VCC
V
V
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tr, tf
ÎÎÎ ÎÎÎ
ÎÎÎ
Operating Temperature, All Package Types
ÎÎÎ
ÎÎÎ
Input Rise and Fall Time VCC = 2.0 V
– 55
0
+ 125
1000
_C
ns
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
(Figure 1) VCC = 4.5 V 0 500
VCC = 6.0 V 0 400
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
v ÎÎÎÎ
v ÎÎÎ VCC – 55 to
Guaranteed Limit
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ
Symbol Parameter Test Conditions V 25_C 85_C 125_C Unit
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
VIH Minimum High–Level Input Vout = VCC – 0.1 V 2.0 1.5 1.5 1.5 V
v Voltage |Iout| 20 µA 3.0 2.1 2.1 2.1
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
4.5 3.15 3.15 3.15
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
6.0 4.2 4.2 4.2
VIL Maximum Low–Level Input Vout = 0.1 V 2.0 0.5 0.5 0.5 V
v
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Voltage
ÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎ |Iout| 20 µA 3.0 0.9 0.9 0.9
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎ
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
VOH
ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Minimum High–Level Output
ÎÎÎÎÎÎÎÎÎ ÎÎÎ
Vin = VIH 2.0 1.9 1.9 1.9 V
v ÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎ
Voltage |Iout| 20 µA 4.5 4.4 4.4 4.4
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
6.0 5.9 5.9 5.9
Vin = VIH |Iout| 2.4 mA 3.0 2.48 2.34 2.2
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ |Iout| 6.0 mA 4.5 3.98 3.84 3.7
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
|Iout| 7.8 mA 6.0 5.48 5.34 5.2
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎ
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Symbol ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
v
ÎÎÎÎÎÎÎÎ
v ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Parameter Test Conditions
VCC
V
– 55 to
25_C 85_C 125_C Unit
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
VOL Maximum Low–Level Output Vin = VIL 2.0 0.1 0.1 0.1 V
v
Voltage |Iout| 20 µA 4.5 0.1 0.1 0.1
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
6.0 0.1 0.1 0.1
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Vin = VIL |Iout| 2.4 mA 3.0 0.26 0.33 0.4
v
ÎÎÎÎ Î
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
|Iout| 6.0 mA 4.5 0.26 0.33 0.4
|Iout| 7.8 mA 6.0 0.26 0.33 0.4
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
IOZ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Maximum Input Leakage Current
ÎÎÎÎ
ÎÎÎ
Maximum Three–State Leakage
Vin = VCC or GND
Output in High–Impedance State
6.0
6.0
± 0.1
± 0.5
± 1.0
± 5.0
± 1.0
± 10
µA
µA
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Current Vin = VIL or VIH
Vout = VCC or GND
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Maximum Quiescent Supply
ÎÎÎÎ
ÎÎÎ
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0 4.0 40 160 µA
NOTE: Information on typical parametric values and high frequency or heavy load considerations can be found in Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Guaranteed Limit
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
VCC – 55 to
v v 25_C 85_C 125_C
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
S b l
Symbol P
Parameter V U i
Unit
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
tPLH, Maximum Propagation Delay, A to YA or B to YB 2.0 96 115 135 ns
tPHL (Figures 1 and 3) 3.0 50 60 70
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
4.5 18 23 27
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
6.0 15 20 23
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
tPLZ, Maximum Propagation Delay, Output Enable to YA or YB 2.0 110 140 165 ns
tPHZ (Figures 2 and 4) 3.0 60 70 80
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
4.5 22 28 33
6.0 19 24 28
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
tPZL,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tPZH ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Maximum Propagation Delay, Output Enable to YA or YB
ÎÎÎÎ
(Figures 2 and 4)
ÎÎÎ
2.0
3.0
110
60
140
70
165
80
ns
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
4.5 22 28 33
6.0 19 24 28
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
tTLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
tTHL ÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Maximum Output Transition Time, Any Output
ÎÎÎÎ
(Figures 1 and 3)
ÎÎÎ
2.0
3.0
60
23
75
27
90
32
ns
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
4.5 12 15 18
6.0 10 13 15
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Cin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Cout
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Maximum Input Capacitance
ÎÎÎÎ
ÎÎÎ
Maximum Three–State Output Capacitance (Output in
—
—
10
15
10
15
10
15
pF
pF
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
High–Impedance State)
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
SWITCHING WAVEFORMS
tr tf VCC
DATA INPUT VCC ENABLE 50%
90%
A OR B 50% A OR B GND
10% GND tPZL tPLZ
tPLH tPHL HIGH
OUTPUT 90% 50% IMPEDANCE
50% OUTPUT Y
YA OR YB 10% VOL
10% tPZH tPHZ
tTLH tTHL 90% VOH
OUTPUT Y 50%
HIGH
IMPEDANCE
Figure 1. Figure 2.
TEST CIRCUITS
* Includes all probe and jig capacitance * Includes all probe and jig capacitance
PIN DESCRIPTIONS
INPUTS to these pins, the outputs are enabled and the devices func-
tion as noninverting buffers. When a high level is applied, the
A1, A2, A3, A4, B1, B2, B3, B4 outputs assume the high impedance state.
(Pins 2, 4, 6, 8, 11, 13, 15, 17)
Data input pins. Data on these pins appear in noninverted OUTPUTS
form on the corresponding Y outputs, when the outputs are
enabled. YA1, YA2, YA3, YA4, YB1, YB2, YB3, YB4
(Pins 18, 16, 14, 12, 9, 7, 5, 3)
CONTROLS
Device outputs. Depending upon the state of the output–
Enable A, Enable B (Pins 1, 19) enable pins, these outputs are either noninverting outputs or
Output enables (active–low). When a low level is applied high–impedance outputs.
LOGIC DETAIL
TO THREE OTHER
A OR B INVERTERS
ONE OF 8
INVERTERS
VCC
DATA
INPUT
A OR B
YA
OR
YB
ENABLE A OR
ENABLE B
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE NOTES:
1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE
20 11 CASE 732–03 POSITION AT SEATING PLANE, AT MAXIMUM
MATERIAL CONDITION.
ISSUE E 2. DIMENSION L TO CENTER OF LEADS WHEN
1 10
FORMED PARALLEL.
3. DIMENSIONS A AND B INCLUDE MENISCUS.
B
MILLIMETERS INCHES
A DIM MIN MAX MIN MAX
A 23.88 25.15 0.940 0.990
B 6.60 7.49 0.260 0.295
C L C 3.81 5.08 0.150 0.200
F D 0.38 0.56 0.015 0.022
F 1.40 1.65 0.055 0.065
G 2.54 BSC 0.100 BSC
H 0.51 1.27 0.020 0.050
N J 0.20 0.30 0.008 0.012
J K 3.18 4.06 0.125 0.160
H K L 7.62 BSC 0.300 BSC
D G M M 0_ 15 _ 0_ 15_
N 0.25 1.02 0.010 0.040
SEATING
PLANE
N SUFFIX
–A– PLASTIC PACKAGE
CASE 738–03 NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
20 11 ISSUE E Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B 3. DIMENSION L TO CENTER OF LEAD WHEN
1 10 FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
C L
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 1.010 1.070 25.66 27.17
B 0.240 0.260 6.10 6.60
–T– C 0.150 0.180 3.81 4.57
K D 0.015 0.022 0.39 0.55
SEATING
PLANE M E 0.050 BSC 1.27 BSC
F 0.050 0.070 1.27 1.77
E N G 0.100 BSC 2.54 BSC
J 0.008 0.015 0.21 0.38
G F K 0.110 0.140 2.80 3.55
J 20 PL
L 0.300 BSC 7.62 BSC
D 20 PL 0.25 (0.010) M T B M M 0_ 15 _ 0_ 15_
0.25 (0.010) M T A M N 0.020 0.040 0.51 1.01
DW SUFFIX
–A– PLASTIC SOIC PACKAGE NOTES:
1. DIMENSIONING AND TOLERANCING PER
CASE 751D–04 ANSI Y14.5M, 1982.
20 11 ISSUE E 2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150
–B– 10X P (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
0.010 (0.25) M B M
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.13
1 10 (0.005) TOTAL IN EXCESS OF D DIMENSION
AT MAXIMUM MATERIAL CONDITION.
–T– SEATING
PLANE
18X G M
K
OUTLINE DIMENSIONS
SD SUFFIX
PLASTIC SSOP PACKAGE
CASE 940C–03
NOTES:
ISSUE B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
20X K REF 2. CONTROLLING DIMENSION: MILLIMETER.
0.25 (0.010) 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
0.12 (0.005) M T U S V S PROTRUSIONS OR GATE BURRS. MOLD FLASH OR
N GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER
SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
L/2 20 11 M FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.15 (0.006) PER
N SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
L B F PROTRUSION/INTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN
DETAIL E EXCESS OF K DIMENSION AT MAXIMUM MATERIAL
PIN 1 1 10 CONDITION. DAMBAR INTRUSION SHALL NOT
IDENT REDUCE DIMENSION K BY MORE THAN 0.07 (0.002)
AT LEAST MATERIAL CONDITION.
ÉÉÉ
ÇÇÇ
K 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE
ONLY.
–U–
ÇÇÇ
ÉÉÉ
A 7. DIMENSION A AND B ARE TO BE DETERMINED AT
–V– J J1 DATUM PLANE –W–.
MILLIMETERS INCHES
0.20 (0.008) M T U S K1 DIM MIN MAX MIN MAX
A 7.07 7.33 0.278 0.288
B 5.20 5.38 0.205 0.212
SECTION N–N C 1.73 1.99 0.068 0.078
D 0.05 0.21 0.002 0.008
F 0.63 0.95 0.024 0.037
–W– G 0.65 BSC 0.026 BSC
C H 0.59 0.75 0.023 0.030
0.076 (0.003)
J 0.09 0.20 0.003 0.008
–T– SEATING J1 0.09 0.16 0.003 0.006
PLANE D G DETAIL E
K 0.25 0.38 0.010 0.015
K1 0.25 0.33 0.010 0.013
H L 7.65 7.90 0.301 0.311
M 0_ 8_ 0_ 8_
DT SUFFIX
PLASTIC TSSOP PACKAGE
CASE 948E–02
20X K REF ISSUE A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
0.15 (0.006) T U S 0.10 (0.004) M T U S V S Y14.5M, 1982.
ÍÍÍÍ
2. CONTROLLING DIMENSION: MILLIMETER.
K 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
ÍÍÍÍ
K1 PROTRUSIONS OR GATE BURRS. MOLD FLASH
20 11 OR GATE BURRS SHALL NOT EXCEED 0.15
2X L/2 (0.006) PER SIDE.
ÍÍÍÍ
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
B J J1 FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
L –U– PER SIDE.
PIN 1 5. DIMENSION K DOES NOT INCLUDE DAMBAR
IDENT SECTION N–N PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
1 10 EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
N 0.25 (0.010) 6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
0.15 (0.006) T U S 7. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE –W–.
A M
MILLIMETERS INCHES
–V– DIM MIN MAX MIN MAX
A 6.40 6.60 0.252 0.260
N B 4.30 4.50 0.169 0.177
C ––– 1.20 ––– 0.047
F D 0.05 0.15 0.002 0.006
F 0.50 0.75 0.020 0.030
DETAIL E G 0.65 BSC 0.026 BSC
H 0.27 0.37 0.011 0.015
J 0.09 0.20 0.004 0.008
–W– J1 0.09 0.16 0.004 0.006
C K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC
G
D H M 0_ 8_ 0_ 8_
DETAIL E
0.100 (0.004)
–T– SEATING
PLANE
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315
Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://www.mot.com/SPS/
◊ MC74HC244A/D
MOTOROLA 8 High–Speed CMOS Logic Data
DL129 — Rev 6