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2SD 2335 - Isc

This document provides specifications for the 2SD2335 silicon NPN power transistor from Inchange Semiconductor. It is a high voltage, high speed transistor in a TO-3PFa package with a built-in damper diode, intended for use in color TV horizontal output applications. Key specifications include maximum ratings of 600V collector-emitter voltage, 7A collector current, and 150°C junction temperature. Electrical characteristics are also listed such as a typical 600V collector-emitter sustaining voltage and 5V collector-emitter saturation voltage at 6A collector current.

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128 views3 pages

2SD 2335 - Isc

This document provides specifications for the 2SD2335 silicon NPN power transistor from Inchange Semiconductor. It is a high voltage, high speed transistor in a TO-3PFa package with a built-in damper diode, intended for use in color TV horizontal output applications. Key specifications include maximum ratings of 600V collector-emitter voltage, 7A collector current, and 150°C junction temperature. Electrical characteristics are also listed such as a typical 600V collector-emitter sustaining voltage and 5V collector-emitter saturation voltage at 6A collector current.

Uploaded by

Steven
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2335

DESCRIPTION
With TO-3PFa package
High voltage;high speed
Built-in damper diode

APPLICATIONS
For color TV horizontal output applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector

3 Emitter

Absolute maximum ratings(Ta=25)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 600 V

VEBO Emitter-base voltage 5 V

IC Collector current 7 A

IB Base current 1.5 A

PC Collector power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2335

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA , IB=0 600 V

V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 5.0 V

VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V

ICBO Collector cut-off current VCB=800V IE=0 10 A

hFE DC current gain IC=1A ; VCE=5V 8

VF Diode forward voltage IF=6A 2.0 V

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2335

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:0.30mm)

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