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    Presentation On 80ghz Antenna Integrated

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    AnveshGadi
    The document describes a co-designed 80 GHz LNA and dipole antenna integrated on silicon for automotive radar applications. A two-stage cascode LNA was designed using a 130nm SiGe:C BICMOS process, exhibiting a gain of 26dB and noise figure of 5dB with 20mW power consumption. A dipole antenna was co-designed with the LNA to match its input impedance and maximize radiation, simulated to have 0dB gain. The co-design and integration of the LNA and antenna on a single silicon die could provide advantages over a system-in-package solution.

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    Presentation On 80ghz Antenna Integrated

    Uploaded by

    AnveshGadi
    48 views3 pages
    The document describes a co-designed 80 GHz LNA and dipole antenna integrated on silicon for automotive radar applications. A two-stage cascode LNA was designed using a 130nm SiGe:C BICMOS process, exhibiting a gain of 26dB and noise figure of 5dB with 20mW power consumption. A dipole antenna was co-designed with the LNA to match its input impedance and maximize radiation, simulated to have 0dB gain. The co-design and integration of the LNA and antenna on a single silicon die could provide advantages over a system-in-package solution.

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    overview og 80ghz antenna with lna

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    Presentation on 80ghz antenna integrated

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    The document describes a co-designed 80 GHz LNA and dipole antenna integrated on silicon for automotive radar applications. A two-stage cascode LNA was designed using a 130nm SiGe:C BICMOS process, exhibiting a gain of 26dB and noise figure of 5dB with 20mW power consumption. A dipole antenna was co-designed with the LNA to match its input impedance and maximize radiation, simulated to have 0dB gain. The co-design and integration of the LNA and antenna on a single silicon die could provide advantages over a system-in-package solution.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    48 views3 pages

    Presentation On 80ghz Antenna Integrated

    Uploaded by

    AnveshGadi
    The document describes a co-designed 80 GHz LNA and dipole antenna integrated on silicon for automotive radar applications. A two-stage cascode LNA was designed using a 130nm SiGe:C BICMOS process, exhibiting a gain of 26dB and noise figure of 5dB with 20mW power consumption. A dipole antenna was co-designed with the LNA to match its input impedance and maximize radiation, simulated to have 0dB gain. The co-design and integration of the LNA and antenna on a single silicon die could provide advantages over a system-in-package solution.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    PRESENTATION ON 80 GHZ CO DESIGNED

    LNA AND ANTENNA FOR AUTOMATIVE


    RADAR
    DESCRIPTION:
    1.USED: Silicon Technology Co-designed Antenna and LNA.
    2.BICMOS9MW
    3.The LNA is a two-stages cascode based on a SiGE:C
    130nm HBT optimized for maximum gain
    4.The antenna is a dipole designed to match the LNA input
    impedance and maximize radiation diagram.
    5.LNA exhibit a gain and NF of 26dB and 5dB respectively with a
    power consumption of 20mW, while the antenna shows a simulated gain
    of 0dB.
    INTRODUCTION:
    During the last few years, the interest towards millimeter Waves
    (mm-Waves) circuits has rapidly grown up, following the increase of
    silicon transistor fT, leading to the development of a large number of
    potential applications all over the W-band, such as WPAN and high data
    rate communications at 60GHz, short and long range radar at 77- 81GHz.
    the increase of operating frequency leads to a reduction of antenna size
    AIM:
    The aim of this work is to demonstrate the interest of a co-designed LNA
    and Antenna integrated on silicon compared to a System in Package (SiP)
    solution,in mm-Waves range.
    BiCMOS9MW 130nm Technology:
    1.offers a high speed self aligned SiGe:C HBT with 230/280GHz fT/fmax
    and 1.6V BVCE0.
    2.Transistor sizing in the LNA design. This technology features a specific
    back-end based on classical BiCMOS process,dedicated to millimeter
    waves applications.
    3.Attenuation constant decreased
    80 GHz 2-stages cascode LNA:
    Providing high reverse isolation and stability, the cascode architecture is
    often used even in high frequency implementations.
    The inductive degeneration has been removed to improve overall gain,
    modifying input impedance.The matching between transistors such as the
    interstage matching has been adjusted by modifying line lengths and
    capacitances. Output load is set to 50 ohms for measurement purpose.
    The main challenge in co-design is the synthesis of the matching between
    the LNA and the antenna.Our LNA presents an input impedance ZLNA
    (1). Hence, the input impedance that will be presented to the LNA must
    be close to ZLNA* (2)

    ANTENNA DESIGN:
    The low resistivity 12/cm and high permittivity r=11.7, of the
    BiCMOS9MW substrate are not suited for the implementation of antenna.
    Some techniques such as multilayers topology or packaged antennas can
    be explored to compensate for the substrate loss. In this paper, as we aim
    to investigate the potentiality of a raw integration of the antenna onto the
    silicon, none of these techniques are used.
    Two techniques can be used: a completely non-resonant antenna, such
    as a Vivaldi antenna; or a resonant antenna, such as a dipole antenna, but
    not sized at its resonance length. The two solutions have been
    investigated, and the dipole antenna was chosen, for integration purposes.
    Ansoft HFSSTM, a 3D full-wave electromagnetic software based on
    Finite Elements Method (FEM), has been used to design the antenna. The
    accuracy of EM simulation depends on the description of the silicon back
    end. To save computation time, the original BEOL of the technology has
    been simplified to the profile proposed in Fig. 5. The Si thickness and
    properties are kept the same, the 4 first oxides are simplified to an
    equivalent layer, namely Dielectric or Diel, and the 2 upper metal levels,
    Metal 6 and Alucap, with the inter oxide are independant layers.
    Dipole antennas, usually exploited at the resonance frequency, exhibit
    a resistive impedance. However, the design of an inductive dipole
    antenna is possible if is geometry is different to its resonance size. To
    address the specifications imposed by the LNA input impedance, the size
    of a resonating dipole antenna has been reduced.The radiating element
    implemented with metal 1, features a balun-based ground plane to
    prevent the radiation of the antenna to the active part as illustrated in Fig.
    6. Power transmission from the LNA to the antenna is made through a /4
    open-stub transmission line. However, the open stub may radiate to cause
    coupling effect and power losses. Hence, instead of an open stub, a via is
    designed between the metal 6 microstrip line and the antenna.

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