Pseudo nMOS Design Style
Logic Design Styles
Dinesh Sharma
Microelectronics Group, EE Department
IIT Bombay, Mumbai
July 26, 2016
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
CMOS summary
Logic consumes no static power in CMOS
design style.
Vdd However, signals have to be routed to the
n pull down network as well as to the p
Vi Vo
pull up network.
So the load presented to every driver is
high.
This is exacerbated by the fact that n and
p channel transistors cannot be placed
close together as these are in different
wells which have to be kept well separated
in order to avoid latchup.
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Pseudo nMOS Design Style
The CMOS pull up network is replaced by
a single pMOS transistor with its gate
Vdd grounded.
Since the pMOS is not driven by signals, it
is always on.
Out The effective gate voltage seen by the
pMOS transistor is Vdd . Thus the
in over-voltage on the p channel gate is
always Vdd - VTp .
Gnd When the nMOS is turned on, a direct
path between supply and ground exists
and static power will be drawn.
However, the dynamic power is reduced
Dineshdue
Sharmato lower capacitive
Logic Design Styles loading
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Static Characteristics
As we sweep the input voltage from ground to Vdd , we
encounter the following regimes of operation:
nMOS off
nMOS saturated, pMOS linear
nMOS linear, pMOS linear
nMOS linear, pMOS saturated
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Low input
Vdd
When the input voltage is less than VTn .
Out The output is high and no current is
drawn from the supply.
in As we raise the input just above VTn , the
output starts falling.
Gnd In this region the nMOS is saturated, while
the pMOS is linear
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
nMOS saturated, pMOS linear
The input voltage is assumed to be sufficiently low so that the
output voltage exceeds the saturation voltage Vi VTn .
Normally, this voltage will be higher than VTp , so the p channel
transistor is in linear mode of operation.
Equating currents through the n and p channel transistors, we
get
1 2 Kn
Kp (Vdd VTp )(Vdd Vo ) (Vdd Vo ) = (Vi VTn )2
2 2
defining V1 Vdd Vo and V2 Vdd VTp , we get
1 2
V1 V2 V1 + (Vi VTn )2 = 0
2 2
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
nMOS saturated, pMOS linear
1 2
V1 V2 V1 + (Vi VTn )2 = 0
2 2
The solutions are:
q
V1 = V2 V22 (Vi VTn )2
substituting the values of V1 and V2 and choosing the sign
which puts Vo in the correct range, we get
q
Vo = VTp + (Vdd VTp )2 (Vi VTn )2
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
nMOS linear, pMOS linear
q
Vo = VTp + (Vdd VTp )2 (Vi VTn )2
As the input voltage is increased, the output voltage will
decrease.
The output voltage will fall below Vi VTn when
q
VTp + VTp 2 + ( + 1)V (V
dd dd 2VTp )
Vi > VTn +
+1
The nMOS is now in its linear mode of operation. The
derived equation does not apply beyond this input voltage.
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
nMOS linear, pMOS saturated
As the input voltage is raised still further, the output voltage will
fall below VTp . The pMOS transistor is now in saturation
regime. Equating currents, we get
1 2 Kp
Kn (Vi VTn )Vo Vo = (Vdd VTp )2
2 2
which gives
1 2 (Vdd VTp )2
Vo (Vo VTn )Vo +
2 2
This can be solved to get
q
Vo = (Vi VTn ) (Vi VTn )2 (Vdd VTp )2 /
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Noise Margins
We find points on the transfer curve where the slope is -1.
When the input is low and output high, we should use
q
Vo = VTp + (Vdd VTp )2 (Vi VTn )2
Differentiating this equation with respect to Vi and setting the
slope to -1, we get
Vdd VTp
ViL = VTn + p
( + 1)
and s
VoH = VTp + (V VTp )
+ 1 dd
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
When the input is high and the output low, we use
q
Vo = (Vi VTn ) (Vi VTn )2 (Vdd VTp )2 /
Differentiating with respect to Vi and setting the slope to -1, we
get
2
ViH = VTn + (Vdd VTp )
3
and
(Vdd VTp )
VoL =
3
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Ratioed Logic
To make the output low value lower than VTn , we get the
condition
1 Vdd VTp 2
>
3 VTn
This places a requirement on the ratios of widths of n and
p channel transistors. The logic gates work properly only
when this equation is satisfied.
Therefore this kind of logic is also called ratioed logic.
In contrast, CMOS logic is called ratioless logic because it
does not place any restriction on the ratios of widths of n
and p channel transistors for static operation.
The noise margin for pseudo nMOS can be determined
easily from the expressions for ViL , VoL , ViH , VoH .
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Rise Time
Vdd
ViL When the input is low, the nMOS is off and the
output rises from low to high.
Vo The situation is identical to the charge up
condition of a CMOS gate with the pMOS
being biased with its gate at 0V.
This gives
2VTp Vdd + VoH 2VTp
C
rise = + ln
Kp (Vdd VTp ) Vdd VTp Vdd VoH
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Fall Time
Calculation of fall time is complicated by the
Vdd fact that the pMOS load continues to dump
current in the output node, even as the nMOS
Out tries to discharge the output capacitor.
The nMOS needs to sink the discharge current
as well as the drain current of the pMOS
transistor.
in Simplifying assumption:
pMOS current remains constant at its
saturation value through the entire discharge
Gnd process.
(This will result in a slightly pessimistic value of discharge time).
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Fall Time
If we assume that the pMOS current remains constant at its
saturation value,
Kp
Ip = (Vdd VTp )2
2
. We can write the KCL equation at the output node as:
dVo
In Ip + C =0
dt
which gives
VoL
fall dVo
Z
=
C Vdd In Ip
We define V1 Vi VTn and V2 Vdd VTp .
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Fall Time
Vdd
The integration range can be divided into two
Out regimes.
nMOS is saturated when V1 Vo < Vdd .
It is in the linear regime when
in VoL < Vo < V1 .
Gnd
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Fall Time
V1 VoL
fall dVo dVo
Z Z
= 1
C Vdd
2
2 Kn V1 Ip V1 Kn (V1 Vo 21 Vo2 ) Ip
so,
V1
fall V V1 dVo
Z
= 1 dd 2 +
C 2 Kn V1 Ip VoL Kn (V1 Vo 21 Vo2 ) Ip
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Pseudo nMOS Inverter design
We design the basic inverter and then scale device sizes
based on the logic function being designed.
The load device size is calculated from the rise time.
2VTp Vdd + VoH 2VTp
C
rise = + ln
Kp (Vdd VTp ) Vdd VTp Vdd VoH
Given a value of rise , operating voltages and technological
constants, Kp and hence, the geometry of the p channel
transistor can be determined.
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Pseudo nMOS Inverter design
Geometry of the n channel transistor can be determined
from static considerations.
q
VoL = (ViH VTn ) (ViH VTn )2 (Vdd VTp )2 /
We take VoL = VTn , and calculate .
But Kn /Kp and Kp is already known.
This evaluates Kn and hence, the geometry of the n
channel transistor.
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Conversion to other logic
Once the basic pseudo nMOS inverter is designed, other
logic gates can be derived from it.
The procedure is the same as that for CMOS, except that it
is applied only to nMOS transistors.
The p channel transistor is kept at the same size as that for
an inverter.
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
Conversion to other logic
The logic is expressed as a sum of products with a bar
(inversion) on top.
For every . in the expression, we put the corresponding n
channel transistors in series.
For every +, we put the n channel transistors in parallel.
We scale the transistor widths up by the number of devices
put in series.
The geometries are left untouched for devices put in
parallel.
Dinesh Sharma Logic Design Styles
Static Characteristics
Noise margins
Pseudo nMOS Design Style
Dynamic characteristics
Pseudo nMOS design Flow
A.B + C.(D + E) in pseudo-nMOS
Vdd
Out
A and B are in series.
A C
The pair is in parallel with C which is in
series with a parallel combination of D and
D E.
B E
Implementation of A.B + C.(D + E ) in pseudo-nMOS logic
design style.
Dinesh Sharma Logic Design Styles
