Prepared Product Specifications Ref No.

A-1
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AN17831A Page No. 1

Structure Silicon Monolithic Bipolar IC

SIL-12 Pins Plastic Package

Appearance (FP-12S Power Type With Fin)

Application Audio

44W (6) x 2ch BTL Power Amplifier

Function Built-in Standby and Muting Features
Incorporating Various Protection Circuits

A Absolute Maximum Ratings

No. Item Symbol Ratings Unit Note

1 Storage Temperature Tstg -55 ~ +150 C

2 Operating Ambient Temperature Topr -25 ~ +75 C

3 Operating Ambient Pressure Popr 1.013x105 0.61x105 Pa

Gopr m/s 2
4 Operating Constant Acceleration 9,810

Sopr m/s 2
5 Operating Shock 4,900

6 Power Supply Voltage Vcc 27 V 1

7 Power Supply Current Icc 8.0 A

8 Power Dissipation PD 37.5 W 2

Operating Supply Voltage Range Vcc 8.0 V ~ 24.0 V

Note: 1) Without input signal, Vcc is up to 27V

2) Ta = 75C with infinite heatsink

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18-FEB-2002
FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
 Prepared Product Specifications Ref No. B-1
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Electrical Characteristics < Vcc = 12V, RL = 4, freq. = 1 kHz, 2 Channel Outputs >
B (Unless otherwise specified, the ambient temperature is 25C2C)
Limit
No. Item Symbol Test Condition Unit Note
Cct. Min Typ Max

1 Quiescent Circuit Current Icq 1 Vin=0mV - 150 300 mA

2 Output Noise Voltage Vno 1 Vin=0mV, Rg=20k - 0.27 0.5 mVrms 1

3 Voltage Gain Gvc 1 Vin=20mV 38 40 42 dB

4 Total Harmonic Distortion THD 1 Vin=20mV - 0.07 0.4 % 2

5 Maximum Output Power 1 Po1 1 THD=10% 12 15 - W

VCC=24V, RL=6,
6 Maximum Output Power 2 Po2 1 THD=10% 30 44 - W

7 Channel Balance CB 1 Vin=20mV -1 0 1 dB

8 Channel Crosstalk CT 1 Vin=20mV, Rg =20k 55 70 - dB 2

9 Output Offset Voltage Voff 1 Rg=20k -350 0 350 mV

Vr=1Vrms,
10 Ripple Rejection RR 1 50 60 - dB 1
fr=120Hz, Rg=20k

11 Standby Current I STB 1 Vin=0mV - 1 10 A

12 Muting Effects MT 1 Vin=20mV 70 80 - dB 2

Note : 1) With a filter band 20Hz ~20kHz (12 dB/OCT) used.

2) With a filter band 400Hz ~30kHz used.

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18-FEB-2002
FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
 Prepared Product Specifications Ref No. C-1
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Description of Test Circuits and Test Methods

[Test Circuit 1]

AN17831A
1 2 3 4 5 6 7 8 9 10 11 12
Vcc
+ 10 + 33 +
2200 Vout1 51k Vout2
8.2k
RL 4 20k RL 4
20k
STB MUTE

ON OFF OFF ON
Vin1 Vin2
5V 3V

Note : * STB 'OFF' means 5V.

MUTE 'OFF' means 0V.

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18-FEB-2002
FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
 Prepared Product Specifications Ref No. D-1
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Circuit Function Block Diagram

Protection Circuit - -
Thermal Shutdown REF
Load Short + - - +
Vcc Short
Ground Short
ASO Protect

+
+
+ +

- -

Standby MUTE
Circuit

1 2 3 4 5 6 7 8 9 10 11 12

Pin Descriptions

Pin No. Pin Descriptions Pin No. Pin Descriptions

1 Vcc 7 Pre GND
2 Ch1 +ve Phase Output 8 Ch2 Input
3 Ch1 Output GND 9 Mute
4 Ch1 -ve Phase Output 10 Ch2 -ve Phase Output
5 Standby 11 Ch2 Output GND
6 Ch1 Input 12 Ch2 +ve Phase Output

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18-FEB-2002
FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
 Prepared Product Specifications Ref No. E
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AN17831A Page No. 5
Package Name FP-12S
Unit : mm

3.6 6.4 0.3 7.7 0.3 7.8 0.3

12
29.96 0.3
28.0 0.3
20.00.1

29.6 0.3
0.6 0.1
R1.8
0.6

2.54
1

0.25 -0.05
+0.1
1.2 0.1

3.5 0.3

Name
of item

Date
Code
Company
insignia

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18-FEB-2002
FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
 Prepared Product Specifications Ref No. F-1
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AN17831A Page No. 6

(Structure Description)
Chip surface passivation SiN, PSG, Others ( ) 1
Lead frame material Fe group, Cu group, Others ( ) 2 , 6
Inner lead surface process Ag plating, Au plating, Others ( ) 2
Outer lead surface process Solder plating, Solder dip, Others ( ) 6
Chip mounting method Ag paste, Au-Si alloy, Solder, Others ( ) 3
Wire bonding method Thermalsonic bonding, Others ( ) 4
Mold material Epoxy, Others ( ) 4
Molding method Transfer mold, Multiplunger mold, Others ( ) 5
Fin material Cu Group Others ( ) 5

Package FP-12S

1 5 6

4 3

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18-FEB-2002
FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
 Prepared Product Specifications Ref No. G-1
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Application Circuit

VCC
12V

Input 2200
VCC
GND
7 1

OUT1
40dB 2
Output1
IN 1 6 GND RL
3 4

51k
40dB 4
OUT1
5
STB

10
STB
Vref
MUTE
8.2k
9
MUTE
OUT2
33 40dB 10
Output2
GND
11 RL
IN 2 8 4

40dB 12
OUT2

STB 'OFF' 5V
STB 'ON' 0V
Mute 'OFF' 0V
Mute 'ON' 3V

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FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
 Prepared Product Specifications Ref No. G-2
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PD - Ta Curves
(1) Tc = Ta, 62.5W ( j-c = 2 C/W )
(2) 20.83W ( f = 4.0 C/W )
With a 100cm 2X 3mm Al heat sink (black colour coated)
or a 200cm 2X 2mm Al heat sink (not lacquered)
(3) 15.63W ( f = 6.0 C/W )
2
With a 100cm X 2mm Al heat sink (not lacquered)

(4) 3.0W at Ta = 25C ( j-a = 42C/W )

Without heat sink
80

70

62.5W
60
Power Dissipation PD ( W )

(1)

50

40

30

20.8W
20 (2)
15.6W
(3)

10

3.0W (4)
0
0 25 50 75 100 125 150
Ambient Temperature Ta ( C )

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18-FEB-2002
FMSC-PSDA-002-01 Rev. 1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
 Prepared Product Specifications Ref No. H-1
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(Precautions for use)

1) Be sure to attach a heat sink to the IC before use. Make sure that the heat sink is secured to
the chassis.

2) Ground the radiation fin so that there will be no difference in electric potential between the
radiation fin and ground.

3) The thermal protection circuit operates at a Tj of approximately 150C. The thermal

protection circuit is reset automatically when the temperature drops.

4) The overvoltage protection circuit operates at a Vcc of approximately 28V.

5) Use a stabilised power supply with a 3V or higher standby voltage.

Eff. Date Eff. Date Eff. Date Eff. Date

18-FEB-2002
FMSC-PSDA-002-01 Rev1. Semiconductor Company, Matsushita Electric Industrial Co., Ltd.