DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

BAV20; BAV21
General purpose diodes
Product specification 1999 May 25
Supersedes data of 1996 Sep 17
Philips Semiconductors Product specification

General purpose diodes BAV20; BAV21

FEATURES DESCRIPTION
Hermetically sealed leaded glass The BAV20 and BAV21 are switching diodes fabricated in planar technology,
SOD27 (DO-35) package. and encapsulated in hermetically sealed leaded glass SOD27 (DO-35)
Switching speed: max. 50 ns packages.
General application
Continuous reverse voltage:
max. 150 V, 200 V
Repetitive peak reverse voltage:
max. 200 V, 250 V
k
handbook, halfpage a
Repetitive peak forward current:
max. 625 mA. MAM246

APPLICATIONS
General purposes in industrial The diodes are type branded.
equipment e.g. oscilloscopes,
digital voltmeters and video output Fig.1 Simplified outline (SOD27; DO-35) and symbol.
stages in colour television.

1999 May 25 2
Philips Semiconductors Product specification

General purpose diodes BAV20; BAV21

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BAV20 200 V
BAV21 250 V
VR continuous peak reverse voltage
BAV20 150 V
BAV21 200 V
IF continuous forward current see Fig.2; note 1 250 mA
IFRM repetitive peak forward current 625 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 C prior to
surge; see Fig.4
t = 1 s 9 A
t = 100 s 3 A
t=1s 1 A
Ptot total power dissipation Tamb = 25 C; note 1 400 mW
Tstg storage temperature 65 +175 C
Tj junction temperature 175 C

Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1999 May 25 3
Philips Semiconductors Product specification

General purpose diodes BAV20; BAV21

ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VF forward voltage see Fig.3
IF = 100 mA 1.0 V
IF = 200 mA 1.25 V
IR reverse current see Fig.5
VR = VRmax 100 nA
VR = VRmax; Tj = 150 C 100 A
Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 5 pF
trr reverse recovery time when switched from IF = 30 mA to 50 ns
IR = 30 mA; RL = 100 ;
measured at IR = 3 mA; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W
Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W

Note
1. Device mounted on a printed circuit-board without metallization pad.

1999 May 25 4
Philips Semiconductors Product specification

General purpose diodes BAV20; BAV21

GRAPHICAL DATA

MBG449 MBG459
300 600
handbook, halfpage handbook, halfpage

IF IF
(mA) (mA)

200 400

(1) (2) (3)

100 200

0 0
0 100 Tamb (oC) 200 0 1 VF (V) 2

(1) Tj = 150 C; typical values.

Device mounted on an FR4 printed-circuit board; lead length 10 mm. (2) Tj = 25 C; typical values.
(3) Tj = 25 C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient Fig.3 Forward current as a function of forward
temperature. voltage.

MBG703
102
handbook, full pagewidth

IFSM
(A)

10

101
1 10 102 103 tp (s) 104

Based on square wave currents.

Tj = 25 C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1999 May 25 5
Philips Semiconductors Product specification

General purpose diodes BAV20; BAV21

MGD009 MGD005
103
handbook, halfpage 1.6
IR handbook, halfpage
Cd
(A)
(pF)
102
1.4

10

1.2
1

1.0
101

102 0.8
0 100 200 0 10 20
Tj (oC) VR (V)

VR = VRmax.
Solid line; maximum values.
Dotted line; typical values. f = 1 MHz; Tj = 25 C.

Fig.5 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse
temperature. voltage; typical values.

MGL588
300
handbook, halfpage

VR
(V)

(1)
200

(2)

100

0
0 100 Tamb (oC) 200

(1) BAV21.
(2) BAV20.

Fig.7 Maximum permissible continuous reverse

voltage as a function of ambient
temperature.

1999 May 25 6
Philips Semiconductors Product specification

General purpose diodes BAV20; BAV21

handbook, full pagewidth

tr tp
t
D.U.T. 10%
RS = 50 IF IF t rr
SAMPLING t
OSCILLOSCOPE
V = VR I F x R S R i = 50

90% (1)
VR
MGA881

input signal output signal

(1) IR = 3 mA.

Fig.8 Reverse recovery voltage test circuit and waveforms.

1999 May 25 7
Philips Semiconductors Product specification

General purpose diodes BAV20; BAV21

PACKAGE OUTLINE

Hermetically sealed glass package; axial leaded; 2 leads SOD27

(1)

D L G1 L

DIMENSIONS (mm are the original dimensions)

G1 0 1 2 mm
b D L
UNIT
max. max. max. min. scale

mm 0.56 1.85 4.25 25.4

Note
1. The marking band indicates the cathode.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOD27 A24 DO-35 SC-40 97-06-09

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 May 25 8
Philips Semiconductors Product specification

General purpose diodes BAV20; BAV21

NOTES

1999 May 25 9
Philips Semiconductors Product specification

General purpose diodes BAV20; BAV21

NOTES

1999 May 25 10
Philips Semiconductors Product specification

General purpose diodes BAV20; BAV21

NOTES

1999 May 25 11
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Printed in The Netherlands 115002/03/pp12 Date of release: 1999 May 25 Document order number: 9397 750 05895