PROFET BTS 621 L1

Smart Two Channel Highside Power Switch

Features
Overload protection Product Summary
Current limitation Overvoltage protection Vbb(AZ) 43 V
Short circuit protection Operating voltage Vbb(on) 5.0 ... 34 V
Thermal shutdown
both
Overvoltage protection (including load dump) channels: each parallel
Fast demagnetization of inductive loads
On-state resistance RON 100 50 m
Reverse battery protection1)
Undervoltage and overvoltage shutdown with Load current (ISO) IL(ISO) 4.4 8.5 A
auto-restart and hysteresis Current limitation IL(SCr) 8 8 A
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
TO-220AB/7
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection

7 7 7
Application 1 1 1
C compatible power switch with diagnostic Standard Straight leads SMD
feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.

+ V bb
4
Voltage Overvoltage Current Gate 1
source protection limit 1 protection
V Logic

Limit for OUT1

Voltage Level shifter
unclamped 1
sensor Rectifier 1 Temperature
ind. loads 1
sensor 1
3 IN1
Charge Open load
6 IN2 pump 1 Short to Vbb
ESD Logic
detection 1
5 ST Charge Current Gate 2
pump 2 limit 2 protection

Level shifter OUT2

Limit for
Rectifier 2 unclamped 7
ind. loads 2 Temperature Load
sensor 2
Open load R R
O1 O2
Short to Vbb
GND
GND
detection 2
PROFET
2 Signal GND
Load GND

1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group 1 12.96
 BTS 621 L1

Pin Symbol Function

1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1
2 GND Logic ground
3 IN1 Input 1, activates channel 1 in case of logical high signal
4 Vbb Positive power supply voltage,
the tab is shorted to this pin
5 ST Diagnostic feedback: open drain, low on failure
6 IN2 Input 2, activates channel 2 in case of logical high signal
7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2

Maximum Ratings at Tj = 25 C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection Vbb 34 V
Tj Start=-40 ...+150C
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump4) 60 V
RI3)= 2 , RL= 2.7 , td= 200 ms, IN= low or high
Load current (Short circuit current, see page 4) IL self-limited A
Operating temperature range Tj -40 ...+150 C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC), TC 25 C Ptot 75 W
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150C, TC = 150C const.
one channel, IL = 4.4 A, ZL = 32 mH, 0 : EAS 395 mJ
both channels parallel, IL = 8.5 A, ZL = 17 mH, 0 : 790
see diagrams on page 9
Electrostatic discharge capability (ESD) IN: VESD 1.0 kV
(Human Body Model) all other pins: 2.0
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC) IIN 2.0 mA
Current through status pin (DC) IST 5.0
see internal circuit diagrams page 7

2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Semiconductor Group 2
 BTS 621 L1

Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case, both channels: RthJC -- -- 1.7 K/W
each channel: -- -- 3.4
junction - ambient (free air): RthJA -- -- 75
SMD version, device on PCB5): 35

Electrical Characteristics
Parameter and Conditions, each channel Symbol Values Unit
at Tj = 25 C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1 or 7)
IL = 2 A Tj=25 C: RON -- 80 100 m
each channel Tj=150 C: 160 200
Nominal load current, ISO Norm (pin 4 to 1 or 7) 3.5 4.4
VON = 0.5 V, TC = 85 C each channel: IL(ISO) 6.8 8.5 -- A
both channels parallel: --
Output current (pin 1 or 7) while GND disconnected IL(GNDhigh) -- -- 10 mA
or GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 8
Turn-on time IN to 90% VOUT: ton 80 200 400 s
Turn-off time IN to 10% VOUT: toff 80 200 400
RL = 12 , Tj =-40...+150C
Slew rate on dV /dton 0.1 -- 1 V/s
10 to 30% VOUT, RL = 12 , Tj =-40...+150C
Slew rate off -dV/dtoff 0.1 -- 1 V/s
70 to 40% VOUT, RL = 12 , Tj =-40...+150C

5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.

Semiconductor Group 3
 BTS 621 L1

Parameter and Conditions, each channel Symbol Values Unit

at Tj = 25 C, Vbb = 12 V unless otherwise specified min typ max

Operating Parameters
Operating voltage6) Tj =-40...+150C: Vbb(on) 5.0 -- 34 V
Undervoltage shutdown Tj =-40...+150C: Vbb(under) 3.5 -- 5.0 V
Undervoltage restart Tj =-40...+25C: Vbb(u rst) -- -- 5.0 V
Tj =+150C: 7.0
Undervoltage restart of charge pump Vbb(ucp) -- 5.6 7.0 V
see diagram page 13 Tj =-40...+150C:
Undervoltage hysteresis Vbb(under) -- 0.2 -- V
Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown Tj =-40...+150C: Vbb(over) 34 -- 43 V
Overvoltage restart Tj =-40...+150C: Vbb(o rst) 33 -- -- V
Overvoltage hysteresis Tj =-40...+150C: Vbb(over) -- 0.5 -- V
Overvoltage protection 7) Tj =-40...+150C: Vbb(AZ) 42 47 -- V
Ibb=40 mA
Standby current (pin 4)
VIN=0 Tj=-40...+25C: Ibb(off) -- 14 30 A
Tj= 150C: -- 17 35
Leakage output current (included in Ibb(off)) IL(off) -- -- 12 A
VIN=0
Operating current (Pin 2)8), VIN=5 V IGND -- 4 6 mA
both channels on, Tj =-40...+150C
Operating current (Pin 2)8) IGND -- 2 3 mA
one channel on, Tj =-40...+150C:

6) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V
7) See also VON(CL) in table of protection functions and circuit diagram page 8.
8) Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group 4
 BTS 621 L1

Parameter and Conditions, each channel Symbol Values Unit

at Tj = 25 C, Vbb = 12 V unless otherwise specified min typ max

Protection Functions
Initial peak short circuit current limit (pin 4 to 1 IL(SCp)
or 7)
Tj =-40C: 11 18 25 A
Tj =25C: 9 14 22
Tj =+150C: 5 8 14
Repetitive short circuit shutdown current limit IL(SCr)
Tj = Tjt (see timing diagrams, page 11) -- 8 -- A
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150C: VON(CL) 41 47 53 V
Thermal overload trip temperature Tjt 150 -- -- C
Thermal hysteresis Tjt -- 10 -- K
Reverse battery (pin 4 to 2) 9) -Vbb -- -- 32 V
Reverse battery voltage drop (Vout > Vbb)
IL = -2.9 A, each channel Tj=150 C: -VON(rev) -- 610 -- mV

Diagnostic Characteristics
Open load detection current Tj=-40 C: IL (OL) 20 -- 400 mA
(on-condition) Tj=25 ..150C: 20 -- 300
Open load detection voltage10) (off-condition) VOUT(OL) 2 3 4 V
Tj=-40..150C:
Internal output pull down
(pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150C RO 4 10 30 k

9) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
10) External pull up resistor required for open load detection in off state.

Semiconductor Group 5
 BTS 621 L1

Parameter and Conditions, each channel Symbol Values Unit

at Tj = 25 C, Vbb = 12 V unless otherwise specified min typ max

Input and Status Feedback11)

Input resistance RI 2.5 3.5 6 k
Tj=-40..150C, see circuit page 7
Input turn-on threshold voltage Tj =-40..+150C: VIN(T+) 1.7 -- 3.5 V
Input turn-off threshold voltage Tj =-40..+150C: VIN(T-) 1.5 -- -- V
Input threshold hysteresis VIN(T) -- 0.5 -- V
Off state input current (pin 3 or 6), VIN = 0.4 V, IIN(off) 1 -- 50 A
Tj =-40..+150C
On state input current (pin 3 or 6), VIN = 3.5 V, IIN(on) 20 50 90 A
Tj =-40..+150C
Delay time for status with open load after switch td(ST OL4) 100 320 800 s
off (other channel in off state)
(see timing diagrams, page 12), Tj =-40..+150C
Delay time for status with open load after switch td(ST OL5) -- 5 20 s
off (other channel in on state)
(see timing diagrams, page 12), Tj =-40..+150C
Status invalid after positive input slope td(ST) -- 200 600 s
(open load) Tj=-40 ... +150C:
Status output (open drain)
Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: VST(high) 5.4 6.1 -- V
ST low voltage Tj =-40...+25C, IST = +1.6 mA: VST(low) -- -- 0.4
Tj = +150C, IST = +1.6 mA: -- -- 0.6

11) If a ground resistor RGND is used, add the voltage drop across this resistor.

Semiconductor Group 6
 BTS 621 L1

Truth Table
IN1 IN2 OUT1 OUT2 ST
BTS621L1
Normal operation L L L L H
L H L H H
H L H L H
H H H H H
Open load Channel 1 L L Z L H(L12))
L H Z H H
H X H X L
Channel 2 L L L Z H(L12))
H L H Z H
X H X H L
Short circuit to Vbb Channel 1 L L H L L13)
L H H H H
H X H X H(L14))
Channel 2 L L L H L13)
H L H H H
X H X H H(L14))
Overtemperature both channel L L L L H
X H L L L
H X L L L
Channel 1 L X L X H
H X L X L
Channel 2 X L X L H
X H X L L
Undervoltage/ Overvoltage X X L L H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)

Terms Input circuit (ESD protection)

Ibb R
V
ON1 I
V 4 V
IN
bb I IN1 ON2
3 Vbb
IN1 I L1
1
I IN2 OUT1 ESD-ZD I
I
PROFET I
IN2 I L2
6
I ST OUT2 GND
7
V V ST GND
IN1 IN2 V 5 V
ST OUT1
2
I VOUT2 ESD zener diodes are not to be used as voltage clamp
R GND
GND at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).

12) With additional external pull up resistor

13) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If R GND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
14) Low resistance to V may be detected in the ON-state by the no-load-detection
bb

Semiconductor Group 7
 BTS 621 L1
Status output
+5V Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
R ST(ON)
ST
+ V bb

ESD-
ZD
GND
VON
ESD-Zener diode: 6.1 V typ., max 5 mA; ON
RST(ON) < 380 at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions. OUT
Operation in this mode may result in a drift of the zener Logic Open load
voltage (increase of up to 1 V). unit detection

Inductive and overvoltage output clamp

+ V bb
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
V
Z

VON
R
EXT

OUT OFF

GND PROFET V
OUT

Logic Open load

VON clamped to 47 V typ. R
O
unit detection

Overvolt. and reverse batt. protection Signal GND

+ V bb

RI
V
Z2
GND disconnect
IN1
IN2
Ibb
Logic V 4
bb
ST
R ST 3 Vbb
IN1 1
V OUT1
Z1
IN2 PROFET
6
GND
OUT2
7
R GND ST GND
5
2
Signal GND
V V V V
IN1 IN2 ST GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 k typ,
RGND= 150
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.

Semiconductor Group 8
 BTS 621 L1
GND disconnect with GND pull up Inductive Load switch-off energy
dissipation
4 E bb

3 Vbb
IN1 E AS
1
V OUT1
IN1 ELoad
IN2 PROFET
6 V bb
V OUT2 IN
IN2 7
ST GND
5 PROFET OUT
2
= ST EL
GND L
V V
V
bb
ST GND
ZL { RL ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.

Vbb disconnect with energized inductive Energy stored in load inductance:

load 2
EL = 1/2LI L
4 While demagnetizing load inductance, the energy
Vbb dissipated in PROFET is
3
IN1 1
high OUT1 EAS= Ebb + EL - ER= VON(CL)iL(t) dt,
IN2 PROFET
6
OUT2
with an approximate solution for RL > 0 :
7
ST GND IL L ILRL
5
EAS= (V + |VOUT(CL)|) ln (1+ )
2 2RL bb |VOUT(CL)|
Maximum allowable load inductance for
V
bb
a single switch off (both channels parallel)
L = f (IL ); Tj,start = 150C,TC = 150C const.,
Normal load current can be handled by the PROFET Vbb = 12 V, RL = 0
itself. L [mH]
10000
Vbb disconnect with charged external
inductive load

4
Vbb 1000
3
IN1 1
high OUT1
IN2 PROFET
6 D
OUT2
7
ST GND
5 100
2

V
bb

10
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.

1
3 5 7 9 11
IL [A]

Semiconductor Group 9
 BTS 621 L1
Typ. transient thermal impedance chip case
ZthJC = f(tp), one Channel active
ZthJC [K/W]
10

D=
0.5
0.1 0.2
0.1
0.05
0.02
0.01
0

0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

tp [s]

Typ. transient thermal impedance chip case

ZthJC = f(tp), both Channel active
ZthJC [K/W]
1

0.1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0

0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

tp [s]

Semiconductor Group 10
 BTS 621 L1

Timing diagrams Both channels are symmetric and consequently the diagrams
are valid for each channel as well as for permuted channels

Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load

IN1

IN2 IN

V bb
t
d(ST)
ST

*)
V
OUT1
V
OUT

V
OUT2

IL
ST open drain I L(OL)
t
t

*) if the time constant of load is too large, open-load-status may

Figure 2a: Switching a lamp: occur

IN Figure 3a: Short circuit

shut down by overtempertature, reset by cooling

IN other channel: normal operation

ST

V
OUT
IL

I L(SCp)
IL(SCr)
I
L

ST
t

Heating up may require several milliseconds, depending on

external conditions

Semiconductor Group 11
 BTS 621 L1
Figure 5b: Open load: detection in ON-state, turn
on/off to open load
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN1

IN IN2 channel 2: normal operation

V
ST OUT1

V
OUT I
L1
channel 1: open load

t t t
d(ST) d(ST OL4) d(ST)
t
d(ST OL5)
T
J ST
t
t

Figure 5c: Open load: detection in ON- and OFF-state

(with REXT), turn on/off to open load
Figure 5a: Open load: detection in ON-state, open
load occurs in on-state
IN1

IN1
IN2 channel 2: normal operation

IN2 channel 2: normal operation

V
OUT1

VOUT1

I L1
channel 1: open load

IL1 channel 1:
open open
normal
load load
load
ST t t d(ST OL5)
t d(ST) d(ST)
t d(ST OL1) t t d(ST OL1)
d(ST OL2) t d(ST OL2)
t
ST
t td(ST OL5) depends on external circuitry because of high
impedance
td(ST OL1) = 30 s typ., td(ST OL2) = 20 s typ

Semiconductor Group 12
 BTS 621 L1
Figure 6a: Undervoltage: Figure 7a: Overvoltage:

IN IN

V bb V bb V ON(CL) Vbb(over) V bb(o rst)

V Vbb(u cp)
bb(under)
V
bb(u rst)

V
OUT
V OUT

ST
ST open drain

t t

Figure 6b: Undervoltage restart of charge pump

V on VON(CL)
off-state

on-state

off-state

V
bb(over)

V V
bb(u rst) bb(o rst)

V
bb(u cp)

V
bb(under)

V bb

charge pump starts at Vbb(ucp) =5.6 V typ.

Semiconductor Group 13
 BTS 621 L1

Package and Ordering Code SMD TO 220AB/7, Opt. E3128 Ordering code
All dimensions in mm BTS621L1 E3128A T&R: Q67060-S6304-A4

Standard TO-220AB/7 Ordering code

BTS621L1 Q67060-S6304-A2

Changed since 04.96

Date Change
Dec td(ST OL4) max reduced from 1500
1996 to 800s, typical from 400 to
320s, min limit unchanged
TO 220AB/7, Opt. E3230 Ordering code EAS maximum rating and diagram
added
BTS621L1 E3230 Q67060-S6304-A3
Zth specification added
max Output leakage current IL(off)
reduced from 20 to 12 A
increased ESD capability
Typ. reverse battery voltage drop -
VON(rev) added
Components used in life-support devices or systems must be
expressly authorised for such purpose! Critical components15)
of the Semiconductor Group of Siemens AG, may only be used in
life supporting devices or systems16) with the express written
approval of the Semiconductor Group of Siemens AG.

15) A critical component is a component used in a life-support

device or system whose failure can reasonably be expected to
cause the failure of that life-support device or system, or to
affect its safety or effectiveness of that device or system.
16) Life support devices or systems are intended (a) to be
implanted in the human body or (b) support and/or maintain
and sustain and/or protect human life. If they fail, it is
reasonably to assume that the health of the user or other
persons may be endangered.

Semiconductor Group 14